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1. 发明授权

US07139026B2 Imaging device with suppressed inter-column variations 失效
公开(公告)号：US07139026B2
公开(公告)日：2006-11-21
申请号：US10166198
申请日：2002-06-11
申请人： Kunihiko Hara , Eiichi Funatsu , Takayuki Usui
发明人： Kunihiko Hara , Eiichi Funatsu , Takayuki Usui
IPC分类号： H04N5/335
CPC分类号： H04N5/3658 , H04N5/3575
摘要： An imaging device reads an output level of a pixel circuit constituting a pixel array by supplying current to the pixel circuit. It reads a signal level and reset level from the pixel circuit by supplying it with the current from a current source circuit, and stores them into a line memory. A pixel level of the pixel circuit is obtained by a differential amplifier that outputs the difference between the signal level and reset level of the same pixel circuit. The gate potential of a current copier transistor that supplies the read current is set at a value that enables the read current to take a constant value from column to column of the pixel array. The image device can suppress variations in the current copier circuit provided for each array column of the pixel circuits, thereby reducing string-like noise in the image picked up.

2. 发明授权

US6087703A Photodetector and photodetection circuit 失效
标题翻译：光电检测器和光电检测电路
公开(公告)号：US6087703A
公开(公告)日：2000-07-11
申请号：US487210
申请日：1995-06-07
申请人： Jun Ohta , Masaya Oita , Yoshikazu Nitta , Kunihiko Hara , Takashi Toyoda , Eiichi Funatsu , Yasunari Miyake , Syuichi Tai
发明人： Jun Ohta , Masaya Oita , Yoshikazu Nitta , Kunihiko Hara , Takashi Toyoda , Eiichi Funatsu , Yasunari Miyake , Syuichi Tai
IPC分类号： H01L27/146 , H01L31/0352 , H04N3/15 , H01L27/14
CPC分类号： H01L31/0352 , H01L27/14609 , H01L27/14643 , H04N3/155
摘要： A photodetector device for converting incident light to an electrical signal has two pn junctions or two MOS junctions fabricated in a silicon substrate. Preferably, a control terminal is provided between the two junctions. A photodetection circuit including a photodetector device has a variable sensitivity and can change the polarity of the output of the photodetector device. For example, the photodetection circuits may have a circuit for providing a bias voltage of one of the two polarities to the photodetector device. The photodetection circuit may have a circuit for changing the polarity of the output signal from the photodetector device.
摘要翻译：用于将入射光转换成电信号的光检测器装置具有在硅衬底中制造的两个pn结或两个MOS结。优选地，控制端子设置在两个结之间。包括光电检测器件的光检测电路具有可变灵敏度并且可以改变光电检测器件的输出的极性。例如，光电检测电路可以具有用于向光电检测器件提供两个极性之一的偏置电压的电路。光检测电路可以具有用于改变来自光电检测器件的输出信号的极性的电路。

3. 发明授权

US5581094A Photodetector, a photodector array comprising photodetectors, an object detector comprising the photodetecter array and an object detecting procedure 失效
标题翻译：光检测器，包括光电检测器的光电检测器阵列，包括光电检测器阵列的物体检测器和物体检测程序
公开(公告)号：US5581094A
公开(公告)日：1996-12-03
申请号：US300693
申请日：1994-09-01
申请人： Kunihiko Hara , Eiichi Funatsu , Masaya Oita , Takashi Toyoda , Yoshikazu Nitta , Shuichi Tai , Kazuo Kyuma
发明人： Kunihiko Hara , Eiichi Funatsu , Masaya Oita , Takashi Toyoda , Yoshikazu Nitta , Shuichi Tai , Kazuo Kyuma
IPC分类号： G01B11/00 , G01B11/24 , G01J1/02 , G01S7/483 , G01S17/10 , G01S17/89 , H01L25/16 , H01L27/146 , H01L27/15 , H01L31/10 , H01L31/108 , H01L31/173 , H04N5/335 , H04N5/341 , H04N5/347 , H04N5/351 , H04N5/357 , H04N5/369 , H04N5/374 , H04N5/378 , H01L31/12 , H01L33/00
CPC分类号： G01S17/89 , G01S7/4816 , G01S7/483 , H01L25/167 , H01L27/14625 , H01L27/14627 , H01L27/14649 , H01L31/173 , H01L27/14603 , H01L2924/0002
摘要： A photodetector has a semiconductor substrate which produces light-induced charge upon the absorption of incident light. A first electrode and a second electrode are attached to the surface of the semiconductor substrate so as to form metal-semiconductor junctions. When control voltage V.sub.B, which is variable in a positive range through a negative range, is applied to the first electrode, a photocurrent flows through the second electrode and depletion layers are formed in the surface of the semiconductor substrate. The control voltage V.sub.B applied to the first electrode increases the expanse of one of the depletion layers relative to that of the other to cause the light-induced charge to drift toward one of the depletion layers or the other. Consequently, a positive or negative current is delivered through the second electrode. Thus, the photosensitivity of the photodetector can be controlled by the control voltage V.sub.B.
摘要翻译：光电检测器具有在吸收入射光时产生光诱导电荷的半导体衬底。第一电极和第二电极附接到半导体衬底的表面以形成金属 - 半导体结。当通过负范围在正的范围内变化的控制电压VB被施加到第一电极时，光电流流过第二电极，并且在半导体衬底的表面中形成耗尽层。施加到第一电极的控制电压VB增加了一个耗尽层相对于另一个耗尽层的膨胀，以使光诱导的电荷漂移到一个耗尽层或另一个。因此，通过第二电极传送正或负电流。因此，可以通过控制电压VB来控制光电检测器的光敏性。

4. 发明授权

US5815608A Apparatus and method for sensing and processing images 失效
标题翻译：用于感测和处理图像的装置和方法
公开(公告)号：US5815608A
公开(公告)日：1998-09-29
申请号：US688684
申请日：1996-07-29
申请人： Eberhard Lange , Kunihiko Hara , Eiichi Funatsu , Jun Ohta , Shuichi Tai , Yoshikazu Nitta , Yuichi Koshiba , Takashi Toyoda , Kazuo Kyuma
发明人： Eberhard Lange , Kunihiko Hara , Eiichi Funatsu , Jun Ohta , Shuichi Tai , Yoshikazu Nitta , Yuichi Koshiba , Takashi Toyoda , Kazuo Kyuma
IPC分类号： G06F15/18 , G06K9/78 , G06N99/00 , G06T7/00 , G06K9/20
CPC分类号： G06K9/78
摘要： An apparatus for sensing and processing images is provided with a photo detector array arranged in a matrix form, a control circuit for feeding a row of the array with voltage for sensitivity control, and a neural network for processing current flowing from a column of the array to the ground in order to obtain an apparatus for sensing and processing images having a simple configuration, a high frame speed, the capability of forming a focus of attention, and high throughput of data and possibility of connecting to the neural network.
摘要翻译：提供了一种用于感测和处理图像的设备，其具有以矩阵形式布置的光电检测器阵列，用于将阵列的一行馈送用于灵敏度控制的电压的控制电路，以及用于处理从阵列列流动的电流的神经网络以获得用于感测和处理具有简单配置，高帧速度，形成关注焦点的能力以及数据的高吞吐量和连接到神经网络的可能性的图像的设备。

5. 发明授权

US5694495A Image sensing device and image sensing method 失效
标题翻译：图像感测装置和图像感测方法
公开(公告)号：US5694495A
公开(公告)日：1997-12-02
申请号：US554997
申请日：1995-11-13
申请人： Kunihiko Hara , Yasunari Miyake , Eiichi Funatsu , Yoshikazu Nitta
发明人： Kunihiko Hara , Yasunari Miyake , Eiichi Funatsu , Yoshikazu Nitta
IPC分类号： H01L27/148 , G06F3/042 , G06K7/10 , G06K9/20 , G06K9/60 , H01L27/14 , H01L27/146 , G06K9/28
CPC分类号： G06K9/605 , G06K9/209 , H01L27/14643
摘要： In an image sensing apparatus, an array of two-dimensional matrix of photosensitive devices is used to detect an image. Each photosensitive device comprises a photosensor accumulating carriers when exposed to a light, control terminals, and an output terminal. A signal generator supplies a vector or a one-dimensional data to the control terminals in the array to output pixel data of the two-dimensional matrix, and the pixel signal is output through the output terminal. The control terminals of the photosensors arranged along each line are connected commonly, while the output terminals thereof arranged along each column are connected commonly. A controller supplies control signals to the control terminals. Then, pixel signal for columns designated by a control signal are output through an output circuit connected to the control terminals. Then, a partial region in the array including a region exposed by the light is determined according to the pixel signals, and data on the partial region is sent to the controller. Then, the controller supplies control signals in correspondence to the partial region. Then, correlation operation of the control signals with the amount of carriers in the photosensors are carried out while reading the pixel signals, and the pixel signals in the partial region is output.
摘要翻译：在图像感测装置中，使用感光装置的二维矩阵阵列来检测图像。每个感光装置包括光电传感器，当暴露于光时，积聚载体，控制端子和输出端子。信号发生器向阵列中的控制端提供矢量或一维数据，以输出二维矩阵的像素数据，并通过输出端输出像素信号。沿着每条线布置的光电传感器的控制端子共同连接，而沿着每列布置的输出端子共同连接。控制器向控制端提供控制信号。然后，由控制信号指定的列的像素信号通过连接到控制端子的输出电路输出。然后，根据像素信号确定包括由光曝光的区域的阵列中的部分区域，并且将部分区域上的数据发送到控制器。然后，控制器对应于该部分区域提供控制信号。然后，在读取像素信号的同时执行控制信号与光电传感器中的载波量的相关操作，并输出部分区域中的像素信号。

6. 发明授权

US08482643B2 Solid-state imaging device including a plurality of pixels and a plurality of signal lines 有权
标题翻译：固态成像装置包括多个像素和多个信号线
公开(公告)号：US08482643B2
公开(公告)日：2013-07-09
申请号：US12685515
申请日：2010-01-11
申请人： Takashi Abe , Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H04N5/335
CPC分类号： H04N5/374 , H04N3/155 , H04N5/335 , H04N5/3741 , H04N5/37457 , H04N5/3765 , H04N5/378 , H04N9/045
摘要： A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.
摘要翻译：固态成像装置能够简化像素结构以减小像素大小，并且能够抑制当提供多个输出系统时像素之间的特性的变化。单位单元（30）包括两个像素（31）和（32）。上，下光电转换器（33）和（34）分别连接到上，下光电转换器的转移晶体管（35）和（36），复位晶体管（37）和放大晶体管（38）像素（31）和（32）。全面信号线39连接到复位晶体管（37）和放大晶体管（38）的各个漏极。控制全面信号线（39）以及传输信号线（42）和（43）和复位信号线（41），以读出信号实现了像素中布线的简化，减少了像素大小等。

7. 发明申请

US20100134648A1 SOLID-STATE IMAGE PICKUP DEVICE AND CAMERA SYSTEM 有权
标题翻译：固态图像拾取器件和摄像机系统
公开(公告)号：US20100134648A1
公开(公告)日：2010-06-03
申请号：US12698326
申请日：2010-02-02
申请人： Eiichi Funatsu , Hiroaki Ebihara , Yoshiharu Kudoh
发明人： Eiichi Funatsu , Hiroaki Ebihara , Yoshiharu Kudoh
IPC分类号： H04N5/228 , H04N5/335
CPC分类号： H04N5/3559 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14656 , H04N5/35563 , H04N5/374 , H04N5/37457 , H04N5/378
摘要： A solid-state image pickup device includes a pixel unit in which a plurality of photoelectric conversion elements having different sensitivities are arranged; and a pixel reading unit configured to read and add output signals from the plurality of photoelectric conversion elements in the pixel unit, and to obtain an output signal seemingly from one pixel. The pixel unit includes an absorbing unit configured to absorb overflowing electric charge from a photoelectric conversion element with a high sensitivity.
摘要翻译：固态图像拾取装置包括其中布置具有不同灵敏度的多个光电转换元件的像素单元; 以及像素读取单元，被配置为从像素单元中的多个光电转换元件读出并添加输出信号，并且从一个像素看来得到输出信号。像素单元包括吸收单元，其被配置为以高灵敏度吸收来自光电转换元件的溢出电荷。

8. 发明申请

US20060164527A1 Solid-state imaging apparatus and its signal reading method 有权
标题翻译：固态成像装置及其信号读取方法
公开(公告)号：US20060164527A1
公开(公告)日：2006-07-27
申请号：US10535970
申请日：2003-11-21
申请人： Takamasa Wada , Eiichi Funatsu , Keiji Mabuchi , Ken Nakajima , Takashi Abe , Tomoyuki Umeda , Nobuo Nakamura , Hiroaki Fujita , Hiroki Sato
发明人： Takamasa Wada , Eiichi Funatsu , Keiji Mabuchi , Ken Nakajima , Takashi Abe , Tomoyuki Umeda , Nobuo Nakamura , Hiroaki Fujita , Hiroki Sato
IPC分类号： H04N9/04
CPC分类号： H04N9/045
摘要： When pixel signals are separately read from a plurality of horizontal signal lines to achieve high-speed processing, color difference in image signals and stripes are eliminated. In the operation of reading the pixel signals from the (2n)th row, the pixel signals from R pixels on odd columns are output to an output system A through a horizontal signal line (60A). On the other hand, the pixel signals from Gr pixels on even columns are output to an output system B through a horizontal signal line (60B). In the operation of reading the pixel signals from the (2n+1)th row, the pixel signals from Gb pixels on the odd columns are output to the output system B through the horizontal signal line (60B) by the switching operation in a switching circuit (50). Similarly, the pixel signals from B pixels on the even columns are output to the output system A through the horizontal signal line (60A) by the switching operation in the switching circuit (50).
摘要翻译：当从多个水平信号线分别读取像素信号以实现高速处理时，消除了图像信号和条纹中的色差。在从第（2n）行读取像素信号的操作中，通过水平信号线（60A）将来自奇数列的R个像素的像素信号输出到输出系统A. 另一方面，偶数列上的Gr像素的像素信号通过水平信号线（60B）输出到输出系统B. 在从第（2n + 1）行读取像素信号的操作中，来自奇数列的Gb像素的像素信号通过水平信号线（60B）通过切换操作被输出到输出系统B 开关电路（50）。类似地，通过切换电路（50）中的切换操作，通过水平信号线（60A）将偶数列上的B像素的像素信号输出到输出系统A.

9. 发明申请

US20050001915A1 Solid-state imaging device and drive control method for the same 有权
标题翻译：固态成像装置和驱动控制方法相同
公开(公告)号：US20050001915A1
公开(公告)日：2005-01-06
申请号：US10826038
申请日：2004-04-16
申请人： Keiji Mabuchi , Eiichi Funatsu , Masanori Kasai
发明人： Keiji Mabuchi , Eiichi Funatsu , Masanori Kasai
IPC分类号： H01L27/146 , H04N5/335 , H04N5/355 , H04N5/361 , H04N5/369 , H04N5/374 , H04N5/376
CPC分类号： H04N5/378 , H04N5/2253 , H04N5/3559 , H04N5/365 , H04N5/3698 , H04N5/37213 , H04N5/374 , H04N5/376 , H04N5/3765
摘要： A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.
摘要翻译： CMOS传感器具有由光接收元件和三个晶体管构成的单位像素，以防止饱和阴影现象和动态范围的减小。在关闭所有像素中共享的漏极线上的电压时，转换时间（下降时间）的长度大于转动任何复位线和传输线的转换时间。因此，构成DRN驱动缓冲器的晶体管的W / L比是合适的。同时，将控制电阻或电流源插入到GND的一条线上，以使驱动期间的操作电流正确。这样可以减少饱和度遮蔽量。通过使抑制型复位晶体管成为抑制浮动扩散的漏电流，扩大动态范围。

10. 发明授权

US06821809B2 Solid state image pickup device and method of producing solid state image pickup device 有权
公开(公告)号：US06821809B2
公开(公告)日：2004-11-23
申请号：US10390845
申请日：2003-03-17
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L2100
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

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