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1. 发明申请

US20120286388A1 SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING SOLID STATE IMAGE PICKUP DEVICE 有权
标题翻译：固态图像拾取装置和制造固态图像拾取装置的方法
公开(公告)号：US20120286388A1
公开(公告)日：2012-11-15
申请号：US13545673
申请日：2012-07-10
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
摘要翻译：形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。使用活性区域的硅化物膜也可以用于配准标记。此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

2. 发明授权

US07638355B2 Solid state image pickup device and method of producing solid state image pickup device 有权
公开(公告)号：US07638355B2
公开(公告)日：2009-12-29
申请号：US11973282
申请日：2007-10-05
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L21/00
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

3. 发明授权

US07279712B2 Solid state image pickup device and method of producing solid state image pickup device 有权
标题翻译：固体摄像装置及固体摄像装置的制造方法
公开(公告)号：US07279712B2
公开(公告)日：2007-10-09
申请号：US10954788
申请日：2004-09-30
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L29/76
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
摘要翻译：形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。使用活性区域的硅化物膜也可以用于配准标记。此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

4. 发明申请

US20050224841A1 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US20050224841A1
公开(公告)日：2005-10-13
申请号：US10509977
申请日：2003-04-04
申请人： Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Takashi Abe , Eiichi Funatsu , Hiroki Sato
发明人： Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Takashi Abe , Eiichi Funatsu , Hiroki Sato
IPC分类号： H04N5/335 , H04N5/355 , H04N5/374 , H01L27/148
CPC分类号： H04N5/3597 , H04N5/3698 , H04N5/3741
摘要： A solid-state imaging device for enlarging an operating margin of a pixel portion and achieving complete transfer of a signal charge by using a plurality of power supply voltages, wherein a plurality of power supplies having different power supply voltage values are supplied to portions of a semiconductor chip 1. For example, as a first power supply system, a first digital power supply voltage (DVDD1) is supplied from a power supply terminal 45, a first digital ground voltage (DVSS1) is supplied from a power supply terminal 46, a second digital power supply voltage (DVDD2) is supplied from a power supply terminal 47, a second digital ground voltage (DVSS2) is supplied from a power supply terminal 48, a third digital power supply (DVDD3) is supplied from a power supply terminal 49, and a third digital ground voltage (DVSS3) is supplied from a power supply terminal 50, and as a second power supply system, a first analog power supply voltage (AVDD1) is supplied from a power supply terminal 40, a first analog ground voltage (AVSS1) is supplied from a power supply terminal 41, a second analog power supply voltage (AVDD2) is supplied from a power supply terminal 42, and a second analog ground voltage (AVSS2) is supplied from a power supply terminal 43.
摘要翻译：一种固态成像装置，用于放大像素部分的工作裕度并通过使用多个电源电压实现信号电荷的完全传送，其中具有不同电源电压值的多个电源被提供给半导体芯片1.例如，作为第一电源系统，从电源端子45供给第一数字电源电压（DVDD1），从电源端子46供给第一数字接地电压（DVSS1），从电源端子47供给第二数字电源电压（DVDD2），从电源端子48供给第二数字接地电压（DVSS2），从第三数字电源电压（DVDD3）供给第三数字电源电压从电源端子50供给电源端子49和第三数字接地电压（DVSS3），作为第二电源系统，从第一电源端子供给第一模拟电源电压（AVDD 1）电源端子40从电源端子41供给第一模拟接地电压（AVSS1），从电源端子42供给第二模拟电源电压（AVDD2），将第二模拟接地电压（AVSS 2）从电源端子43供给。

5. 发明申请

US20050056902A1 Solid state image pickup device and method of producing solid state image pickup device 有权
标题翻译：固体摄像装置及固体摄像装置的制造方法
公开(公告)号：US20050056902A1
公开(公告)日：2005-03-17
申请号：US10954788
申请日：2004-09-30
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L21/027 , H01L23/544 , H01L27/14 , H01L27/146 , H04N5/335 , H04N5/369 , H04N5/374 , G03G15/00 , H01L21/00 , H01L31/00
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
摘要翻译：形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。使用活性区域的硅化物膜也可以用于配准标记。此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

6. 发明授权

US08035105B2 Solid state image pickup device and method of producing solid state image pickup device 有权
标题翻译：固体摄像装置及固体摄像装置的制造方法
公开(公告)号：US08035105B2
公开(公告)日：2011-10-11
申请号：US12795442
申请日：2010-06-07
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L29/76
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
摘要翻译：形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。使用活性区域的硅化物膜也可以用于配准标记。此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

7. 发明申请

US20110221021A1 Solid state image pickup device and method of producing solid state image pickup device 有权
公开(公告)号：US20110221021A1
公开(公告)日：2011-09-15
申请号：US13064787
申请日：2011-04-15
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L31/0232
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

8. 发明授权

US07582503B2 Solid state image pickup device and method of producing solid state image pickup device 有权
标题翻译：固体摄像装置及固体摄像装置的制造方法
公开(公告)号：US07582503B2
公开(公告)日：2009-09-01
申请号：US11973237
申请日：2007-10-05
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L21/00
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
摘要翻译：形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。使用活性区域的硅化物膜也可以用于配准标记。此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

9. 发明授权

US07515185B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US07515185B2
公开(公告)日：2009-04-07
申请号：US10509977
申请日：2003-04-04
申请人： Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Takashi Abe , Eiichi Funatsu , Hiroki Sato
发明人： Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Takashi Abe , Eiichi Funatsu , Hiroki Sato
IPC分类号： H04N5/335 , H01L27/148
CPC分类号： H04N5/3597 , H04N5/3698 , H04N5/3741
摘要： A solid-state imaging device for enlarging an operating margin of a pixel portion and achieving complete transfer of a signal charge by using a plurality of power supply voltages, wherein a plurality of power supplies having different power supply voltage values are supplied to portions of a semiconductor chip 1. For example, as a first power supply system, a first digital power supply voltage (DVDD1) is supplied from a power supply terminal 45, a first digital ground voltage (DVSS1) is supplied from a power supply terminal 46, a second digital power supply voltage (DVDD2) is supplied from a power supply terminal 47, a second digital ground voltage (DVSS2) is supplied from a power supply terminal 48, a third digital power supply (DVDD3) is supplied from a power supply terminal 49, and a third digital ground voltage (DVSS3) is supplied from a power supply terminal 50, and as a second power supply system, a first analog power supply voltage (AVDD1) is supplied from a power supply terminal 40, a first analog ground voltage (AVSS1) is supplied from a power supply terminal 41, a second analog power supply voltage (AVDD2) is supplied from a power supply terminal 42, and a second analog ground voltage (AVSS2) is supplied from a power supply terminal 43.
摘要翻译：一种固态成像装置，用于放大像素部分的工作裕度并通过使用多个电源电压实现信号电荷的完全传送，其中具有不同电源电压值的多个电源被提供给半导体芯片1.例如，作为第一电源系统，从电源端子45供给第一数字电源电压（DVDD1），从电源端子46供给第一数字接地电压（DVSS1）从电源端子47供给第二数字电源电压（DVDD2），从电源端子48供给第二数字接地电压（DVSS2），从电源端子49供给第三数字电源（DVDD3），并且从电源端子50提供第三数字接地电压（DVSS3），作为第二电源系统，从电源端子提供第一模拟电源电压（AVDD1）如图40所示，从电源端子41提供第一模拟地电压（AVSS1），从电源端子42提供第二模拟电源电压（AVDD2），从第二模拟电源电压（AVSS2）供给第二模拟接地电压电源端子43。

10. 发明申请

US20080102554A1 Solid state image pickup device and method of producing solid state image pickup device 有权
标题翻译：固体摄像装置及固体摄像装置的制造方法
公开(公告)号：US20080102554A1
公开(公告)日：2008-05-01
申请号：US11973237
申请日：2007-10-05
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L31/18
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
摘要翻译：形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。使用活性区域的硅化物膜也可以用于配准标记。此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

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