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1. 发明授权

US06269221B1 Liquid feed vaporization system and gas injection device 失效
公开(公告)号：US06269221B1
公开(公告)日：2001-07-31
申请号：US09662897
申请日：2000-09-15
申请人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Fumio Kuriyama , Takeshi Murakami , Masahito Abe , Yuji Araki , Hiroyuki Ueyama
发明人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Fumio Kuriyama , Takeshi Murakami , Masahito Abe , Yuji Araki , Hiroyuki Ueyama
IPC分类号： F22B2906
CPC分类号： C23C16/45565 , C23C16/448 , C23C16/45561 , C23C16/4557
摘要： A compact vaporizer system is presented to produce a high quality vapor feed from a liquid feed to be delivered to a chemical vapor deposition processing chamber to produce thin film devices based on highly dielectric or ferroelectric materials such as BaTiO3, SrTiO3 and other such materials. The vaporization apparatus comprises a feed tank for storing the liquid feed; feed delivery means for transporting the liquid feed by way of a feed delivery path; a vaporizer section disposed in the delivery path comprising a high temperature heat exchanger having a capillary tube for transporting the liquid feed and a heat source for externally heating the capillary tube; and a vaporization prevention section disposed upstream of the vaporizer section for preventing effects of the vaporizer section to the liquid feed within the vaporization prevention section.

2. 发明授权

US06282368B1 Liquid feed vaporization system and gas injection device 失效
标题翻译：液体进料蒸发系统和气体注入装置
公开(公告)号：US06282368B1
公开(公告)日：2001-08-28
申请号：US09663358
申请日：2000-09-15
申请人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Takeshi Murakami , Masahito Abe , Yuji Araki , Hiroyuki Ueyama
发明人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Takeshi Murakami , Masahito Abe , Yuji Araki , Hiroyuki Ueyama
IPC分类号： A61H3306
CPC分类号： C23C16/45565 , C23C16/448 , C23C16/45561 , C23C16/4557
摘要： A compact vaporizer system is presented to produce a high quality vapor feed from a liquid feed to be delivered to a chemical vapor deposition processing chamber to produce thin film devices based on highly dielectric or ferroelectric materials such as BaTiO3, SrTiO3 and other such materials. The vaporization apparatus comprises a feed tank for storing the liquid feed; feed delivery means for transporting the liquid feed by way of a feed delivery path; a vaporizer section disposed in the delivery path comprising a high temperature heat exchanger having a capillary tube for transporting the liquid feed and a heat source for externally heating the capillary tube; and a vaporization prevention section disposed upstream of the vaporizer section for preventing effects of the vaporizer section to the liquid feed within the vaporization prevention section.
摘要翻译：提供了一种紧凑的蒸发器系统，以从液体进料产生高品质的蒸气进料，以将其输送到化学气相沉积处理室，以产生基于高电介质或铁电材料如BaTiO 3，SrTiO 3等材料的薄膜器件。蒸发装置包括用于储存液体进料的进料罐; 用于通过进料输送路径输送液体进料的进料输送装置; 设置在输送路径中的蒸发器部分包括具有用于输送液体进料的毛细管和用于外部加热毛细管的热源的高温热交换器; 以及设置在蒸发部的上游的防蒸发部，用于防止蒸发部对蒸发防止部内的液体进料的影响。

3. 发明授权

US06195504B1 Liquid feed vaporization system and gas injection device 失效
标题翻译：液体进料蒸发系统和气体注入装置
公开(公告)号：US06195504B1
公开(公告)日：2001-02-27
申请号：US08974512
申请日：1997-11-19
申请人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Fumio Kuriyama , Takeshi Murakami , Masahito Abe , Yuji Araki , Hiroyuki Ueyama
发明人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Fumio Kuriyama , Takeshi Murakami , Masahito Abe , Yuji Araki , Hiroyuki Ueyama
IPC分类号： A61H3306
CPC分类号： C23C16/45565 , C23C16/448 , C23C16/45561 , C23C16/4557
摘要： A compact vaporizer system is presented to produce a high quality vapor feed from a liquid feed to be delivered to a chemical vapor deposition processing chamber to produce thin film devices based on highly dielectric or ferroelectric materials such as BaTiO3, SrTiO3 and others such materials. The vaporization apparatus comprises a feed tank for storing the liquid feed; feed delivery means for transporting the liquid feed by way of a feed delivery path; a vaporizer section disposed in the delivery path comprising a high temperature heat exchanger having a capillary tube for transporting the liquid feed and a heat source for externally heating the capillary tube; and a vaporization prevention section disposed upstream of the vaporizer section for preventing heating effects of the vaporizer section to the liquid feed within the vaporization prevention section.
摘要翻译：提供了一种紧凑的蒸发器系统，用于从液体进料产生高质量的蒸汽进料，以将其输送到化学气相沉积处理室，以产生基于高电介质或铁电材料如BaTiO 3，SrTiO 3等材料的薄膜器件。蒸发装置包括用于储存液体进料的进料罐; 用于通过进料输送路径输送液体进料的进料输送装置; 设置在输送路径中的蒸发器部分包括具有用于输送液体进料的毛细管和用于外部加热毛细管的热源的高温热交换器; 以及蒸发防止部，其设置在所述蒸发部的上游侧，用于防止所述蒸发部对所述蒸发防止部内的所述液体进料的加热效果。

4. 发明授权

US5950646A Vapor feed supply system 失效
标题翻译：蒸气供料系统
公开(公告)号：US5950646A
公开(公告)日：1999-09-14
申请号：US3947
申请日：1998-01-08
申请人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Takeshi Murakami , Yukio Fukunaga , Masahito Abe , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Mitsunao Shibasaki , Yuji Araki , Hiroyuki Ueyama
发明人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Takeshi Murakami , Yukio Fukunaga , Masahito Abe , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Mitsunao Shibasaki , Yuji Araki , Hiroyuki Ueyama
IPC分类号： B08B9/00 , C23C16/44 , C23C16/448 , B08B3/10
CPC分类号： C23C16/448 , B08B9/00 , C23C16/4407 , Y10S134/902
摘要： A vapor feed supply system including a vaporizer device and a method of cleaning a vapor flow region employing such a vaporizer device enables thorough cleaning of the system, without having to degrade the overall system vacuum in the process of cleaning the vaporizer device. The method includes defining a cleaning fluid passage having a predetermined withstand pressure by isolating a cleaning region of the vapor flow region, and flowing a cleaning fluid into the cleaning fluid passage under a pressure so as to enable the cleaning fluid to remain in a liquid state at a cleaning temperature of the cleaning region.
摘要翻译：包括蒸发器装置和使用这种蒸发器装置的蒸汽流动区域的清洁方法的蒸汽供给系统能够彻底清洁系统，而不必在清洁蒸发器装置的过程中降低整个系统的真空度。该方法包括通过隔离蒸汽流动区域的清洁区域来限定具有预定耐受压力的清洁流体通道，并且在压力下将清洁流体流入清洁流体通道以使清洁流体保持在液体状态在清洁区域的清洁温度下。

5. 发明授权

US6132512A Vapor-phase film growth apparatus and gas ejection head 失效
标题翻译：气相膜生长装置和气体喷射头
公开(公告)号：US6132512A
公开(公告)日：2000-10-17
申请号：US3948
申请日：1998-01-08
申请人： Kuniaki Horie , Tsutomu Nakada , Takeshi Murakami , Hidenao Suzuki , Masahito Abe , Yuji Araki
发明人： Kuniaki Horie , Tsutomu Nakada , Takeshi Murakami , Hidenao Suzuki , Masahito Abe , Yuji Araki
IPC分类号： C23C16/44 , C23C16/455 , C30B25/14 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/45565 , C30B25/14
摘要： A vapor-phase film growth apparatus includes a substrate holder for holding a substrate, a gas ejection head, and a radiant heat shield device. The substrate holder has a substrate heater therein, and the gas ejection head has a gas injection surface for ejecting a material gas toward a substrate held by the substrate holder. The radiant heat shield device is disposed between the substrate holder and the gas injection head in confronting relationship to the gas injection surface of the gas ejection nozzle. The substantially planar radiant heat shield device is permeable to gases and has a heating capability.
摘要翻译：气相膜生长装置包括用于保持基板的基板保持器，气体喷射头和辐射热屏蔽装置。衬底保持器在其中具有衬底加热器，并且气体喷射头具有用于将材料气体朝向由衬底保持器保持的衬底喷射的气体注入表面。辐射热屏蔽装置以与气体喷射嘴的气体注入表面相对的关系设置在衬底保持器和气体注入头之间。基本上平面的辐射热屏蔽装置可透气并具有加热能力。

6. 发明授权

US5951923A Vaporizer apparatus and film deposition apparatus therewith 失效
标题翻译：气化装置及其成膜装置
公开(公告)号：US5951923A
公开(公告)日：1999-09-14
申请号：US861516
申请日：1997-05-22
申请人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Fumio Kuriyama , Takeshi Murakami , Masahito Abe , Yuji Araki
发明人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Fumio Kuriyama , Takeshi Murakami , Masahito Abe , Yuji Araki
IPC分类号： B01D1/22 , C23C16/448 , B01F3/04
CPC分类号： B01D1/22 , C23C16/4481 , C23C16/4485 , Y10S261/65
摘要： A vaporizer apparatus efficiently vaporizes difficult-to-vaporize materials such as complex feed materials for producing a high dielectric or ferroelectric material. The vaporizer apparatus includes a vaporizing passage formed by a pair of opposed walls separated by a minute spacing to a liquid feed entrance provided at one end of the vaporizing passage, a vaporized feed exit provided at an opposite end of the vaporizing passage, and a heating arrangement for heating the walls to a temperature in excess of a vaporizing temperature of the liquid feed so that the liquid feed material may be guided into the vaporizing passage to be vaporized.
摘要翻译：蒸发器装置有效地蒸发诸如用于生产高电介质或铁电材料的复合进料的难以汽化的材料。蒸发器装置包括：由与蒸发通道的一端设置的液体进料入口分开的一对相对的壁形成的蒸发通道，设置在蒸发通道的相对端的蒸发进料口，以及加热用于将壁加热到超过液体进料的蒸发温度的温度的布置，使得液体进料可以被引导到蒸发通道中以被蒸发。

7. 发明授权

US06387182B1 Apparatus and method for processing substrate 失效
标题翻译：基板处理装置及方法
公开(公告)号：US06387182B1
公开(公告)日：2002-05-14
申请号：US09517699
申请日：2000-03-02
申请人： Kuniaki Horie , Yukio Fukunaga , Naoaki Ogure , Tsutomu Nakada , Masahito Abe , Mitsunao Shibasaki , Hidenao Suzuki , Yuji Araki , Kiwamu Tsukamoto
发明人： Kuniaki Horie , Yukio Fukunaga , Naoaki Ogure , Tsutomu Nakada , Masahito Abe , Mitsunao Shibasaki , Hidenao Suzuki , Yuji Araki , Kiwamu Tsukamoto
IPC分类号： B05C2100
CPC分类号： C23C16/45574 , C23C16/409 , C23C16/45514 , C23C16/45561 , C23C16/45563 , C23C16/4557
摘要： A substrate processing apparatus forms a thin film of high-dielectric or ferroelectric such as barium/strontium titanates, or a copper film for wiring on a substrate, and has a gas ejection head for individually introducing at least two gases including a material gas and ejecting the gases toward a substrate to be processed. The gas ejection head has at least two gas passageways for individually introducing the two gases, and at least two temperature control devices for individually controlling temperatures of the gases flowing through the gas passageways.
摘要翻译：基板处理装置在基板上形成诸如钡/锶钛酸盐或铜箔的高电介质或铁电薄膜，并且具有气体喷射头，用于分别引入包括材料气体的至少两种气体并喷射朝向待处理基板的气体。气体喷射头具有用于分别引入两种气体的至少两个气体通道和用于单独控制流过气体通道的气体的温度的至少两个温度控制装置。

8. 发明授权

US06488774B1 Trap apparatus 失效
标题翻译：陷阱装置
公开(公告)号：US06488774B1
公开(公告)日：2002-12-03
申请号：US09512333
申请日：2000-02-24
申请人： Kuniaki Horie , Masahito Abe , Tsutomu Nakada , Yuji Araki
发明人： Kuniaki Horie , Masahito Abe , Tsutomu Nakada , Yuji Araki
IPC分类号： C23C1600
CPC分类号： C23C16/4412 , B01D5/0027 , B01D8/00 , Y02C20/30
摘要： A trap apparatus is optimum for trapping a material gas discharged from a vapor deposition apparatus for depositing in a vapor phase thin films of high-dielectric or ferroelectric such as barium/strontium titanates on substrates. The trap apparatus is disposed downstream of a vacuum process chamber. The vacuum process chamber is for processing a substrate. The trap apparatus is for trapping a component having a low vapor pressure contained in a gas discharged from the vacuum process chamber. The trap apparatus includes a trap container for introducing the gas discharged from the vacuum process chamber, and a cooling device provided in the trap container for cooling the gas to a temperature equal to or lower than a condensing temperature of a gas component which is contained in the gas and easily liquidized.
摘要翻译：捕集装置最适于捕获从气相沉积装置排出的材料气体，用于沉积在基底上的高电介质或铁电体如钡/锶钛酸盐的气相薄膜中。捕集装置设置在真空处理室的下游。真空处理室用于处理基板。捕集装置用于捕获从真空处理室排出的气体中所含的具有低蒸气压的部件。捕集装置包括用于引入从真空处理室排出的气体的捕集容器和设置在捕集容器中的冷却装置，用于将气体冷却至等于或低于气体成分的冷凝温度的温度气体容易液化。

9. 发明授权

US06312569B1 Chemical vapor deposition apparatus and cleaning method thereof 失效
标题翻译：化学气相沉积设备及其清洁方法
公开(公告)号：US06312569B1
公开(公告)日：2001-11-06
申请号：US09172141
申请日：1998-10-14
申请人： Hidenao Suzuki , Tsutomu Nakada , Masahito Abe , Masao Saitoh
发明人： Hidenao Suzuki , Tsutomu Nakada , Masahito Abe , Masao Saitoh
IPC分类号： C25F100
CPC分类号： C23C16/4401 , Y10S156/916
摘要： A chemical vapor deposition apparatus for depositing a thin film of highly dielectric materials for giga-capacity memory devices can reliably clean reaction products formed within the deposition chamber without sacrificing the production efficiency. The apparatus comprises a hermetic deposition chamber containing a substrate holding section for supporting a substrate, and a gas supply head disposed opposite to the substrate holding section for directing a gaseous feed material onto the substrate. There are provided a trapping member supporting device for supporting a trapping member so as to be opposite to a target cleaning area inside the deposition chamber, and a plasma generation device for generating a plasma between the target cleaning area and the trapping member supported by the trapping member supporting device.
摘要翻译：用于沉积用于千兆容量存储器件的高介电材料薄膜的化学气相沉积设备可以可靠地清洁沉积室内形成的反应产物而不牺牲生产效率。该装置包括一个包含用于支撑衬底的衬底保持部分的气密淀积室和一个与衬底保持部分相对设置的用于将气体进料材料引导到衬底上的气体供给头。提供了一种捕获构件支撑装置，用于支撑捕获构件以与沉积室内的目标清洁区域相对;以及等离子体产生装置，用于在目标清洁区域和由捕获物支撑的捕获构件之间产生等离子体会员支持装置。

10. 发明授权

US09556533B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US09556533B2
公开(公告)日：2017-01-31
申请号：US13572924
申请日：2012-08-13
申请人： Keiichi Kurashina , Tsutomu Nakada
发明人： Keiichi Kurashina , Tsutomu Nakada
IPC分类号： C25D5/08 , C25D7/12 , C25D17/02 , H01L21/288 , H01L21/768
CPC分类号： C25D17/02 , C25D5/08 , C25D7/123 , H01L21/2885 , H01L21/76877 , H01L21/76879
摘要： A substrate processing apparatus includes a plurality of inlet pipes and a plurality of outlet pipes, connected to a processing tank and configured to be switched therebetween to create a flow of a processing liquid in the processing tank in a direction different from that of the processing liquid before the switching. The inlet pipes and the outlet pipes are each provided with a flow control device which is controlled by a control section so that upon the switching, a flow rate of the processing liquid flowing therethrough changes with time.
摘要翻译：基板处理装置包括多个入口管和多个出口管，连接到处理槽并被配置为在其之间切换，以在处理槽中产生与处理液不同的方向的处理液流在切换之前。入口管和出口管各自设置有由控制部控制的流量控制装置，使得在切换时流过的处理液的流量随时间而变化。

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