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1. 发明授权

US06780245B2 Method and apparatus of producing thin film of metal or metal compound 失效
标题翻译：制造金属或金属化合物薄膜的方法和装置
公开(公告)号：US06780245B2
公开(公告)日：2004-08-24
申请号：US10315170
申请日：2002-12-10
申请人： Kuniaki Horie , Akira Fukunaga
发明人： Kuniaki Horie , Akira Fukunaga
IPC分类号： B05C1108
CPC分类号： C23C24/087 , C23C8/02 , C23C24/106
摘要： A thin film of metal or metal compound is produced by preparing an ultrafine particle dispersion liquid by dispersing ultrafine particles at least partly made of metal into a given organic solvent, applying the ultrafine particle dispersion liquid to a substrate, drying the ultrafine particle dispersion liquid to leave metal or metal compound particles on the substrate, heating the metal or metal compound particles to join the metal or metal compound particles, and annealing the metal or metal compound particles into a thin film.
摘要翻译：通过将至少部分由金属制成的超微粒子分散在规定的有机溶剂中，通过将特细微粒分散液分散在基材上，将超细粒子分散液干燥，将超细粒子分散液干燥，得到金属或金属化合物的薄膜在基板上留下金属或金属化合物颗粒，加热金属或金属化合物颗粒以接合金属或金属化合物颗粒，并将金属或金属化合物颗粒退火成薄膜。

2. 发明授权

US06730596B1 Method of and apparatus for forming interconnection 失效
标题翻译：形成互连的方法和装置
公开(公告)号：US06730596B1
公开(公告)日：2004-05-04
申请号：US09868140
申请日：2001-06-15
申请人： Akira Fukunaga , Kuniaki Horie , Naoaki Ogure , Takao Kato , Akihisa Hongo , Hiroshi Nagasawa
发明人： Akira Fukunaga , Kuniaki Horie , Naoaki Ogure , Takao Kato , Akihisa Hongo , Hiroshi Nagasawa
IPC分类号： H01L214763
CPC分类号： H05K3/4061 , B05C11/08 , C23C18/02 , C23C18/08 , H01L21/288 , H01L21/6715 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H05K1/0306 , H05K3/045 , H05K3/102 , H05K2201/0257 , H01L2924/00
摘要： The present invention relates particularly to a method of and an apparatus for forming a fine interconnection in a highly integrated circuit formed on a semiconductor substrate. The method has the steps of preparing a substrate having fine recesses formed in a surface thereof, dispersing ultrafine particles made at least partly of a metal in a predetermined solvent, producing an ultrafine particle dispersed liquid, supplying the ultrafine particle dispersed liquid to the fine recesses of the substrate, heating the substrate to melt and bond the metal, and chemical mechanical polishing the surface of the substrate to remove an excessively attached metal therefrom. According to the present invention, it is possible to stably deposit an interconnection metal of good quality using an inexpensive material.
摘要翻译：本发明尤其涉及形成在半导体衬底上的高度集成电路中形成精细互连的方法和装置。该方法具有如下步骤：制备在其表面形成有微细凹槽的基材，将至少部分由金属制成的超微粒子分散在预定溶剂中，制备超细颗粒分散液体，将超细颗粒分散液体供应到细小凹槽加热衬底以熔融和粘合金属，并化学机械抛光衬底的表面以从中除去过量附着的金属。根据本发明，可以使用便宜的材料稳定地沉积质量好的互连金属。

3. 发明授权

US06972256B2 Method and apparatus for forming thin film of metal 失效
标题翻译：用于形成金属薄膜的方法和装置
公开(公告)号：US06972256B2
公开(公告)日：2005-12-06
申请号：US09890330
申请日：2000-11-29
申请人： Akira Fukunaga , Kuniaki Horie , Naoaki Ogure , Takao Kato , Hiroshi Nagasawa , Shinji Kajita , Makoto Kubota
发明人： Akira Fukunaga , Kuniaki Horie , Naoaki Ogure , Takao Kato , Hiroshi Nagasawa , Shinji Kajita , Makoto Kubota
IPC分类号： C23C18/14 , H01L21/288 , H01L21/768 , H05K3/10 , H01L21/44
CPC分类号： H05K3/105 , C23C18/14 , H01L21/288 , H01L21/76885
摘要： The present invention relates to a method of and an apparatus for forming a thin metal film of copper, silver, or the like on a surface of a semiconductor or another substrate. A method of forming a thin metal film, comprises preparing a dispersed liquid having a metal-containing organic compound dispersed in a predetermined solvent, coating the dispersed liquid on a surface of a substrate and evaporating the solvent to form a coating layer, and applying an energy beam to the coating layer to decompose away an organic substance contained in the coating layer in an area irradiated with the energy beam and bond metal contained in the coating layer.According to the present invention, it is possible to form a thin metal film of good quality efficiently and stably. The thin metal film used as metal interconnects in highly integrated semiconductor circuits contributes to the progress of a process of fabricating semiconductor devices.
摘要翻译：本发明涉及在半导体或其他基板的表面上形成铜，银等薄金属膜的方法和装置。一种形成薄金属膜的方法包括制备分散在预定溶剂中的含金属有机化合物的分散液体，将分散的液体涂布在基材表面上并蒸发溶剂以形成涂层，能量束到涂层，以分解被包含在涂层中的能量束和接合金属的区域中的包覆层中的有机物质。根据本发明，可以形成薄膜金属膜高质量，高稳定地品质。在高度集成的半导体电路中用作金属互连的金属薄膜有助于制造半导体器件的工艺的进展。

4. 发明授权

US06517642B2 Method and apparatus of producing thin film of metal or metal compound 失效
标题翻译：制造金属或金属化合物薄膜的方法和装置
公开(公告)号：US06517642B2
公开(公告)日：2003-02-11
申请号：US09726552
申请日：2000-12-01
申请人： Kuniaki Horie , Akira Fukunaga
发明人： Kuniaki Horie , Akira Fukunaga
IPC分类号： B22F704
CPC分类号： C23C24/087 , C23C8/02 , C23C24/106
摘要： A thin film of metal or metal compound is produced by preparing an ultrafine particle dispersion liquid by dispersing ultrafine particles at least partly made of metal into a given organic solvent, applying the ultrafine particle dispersion liquid to a substrate, drying the ultrafine particle dispersion liquid to leave metal or metal compound particles on the substrate, heating the metal or metal compound particles to join the metal or metal compound particles, and annealing the metal or metal compound particles into a thin film.
摘要翻译：通过将至少部分由金属制成的超微粒子分散在规定的有机溶剂中，通过将特细微粒分散液分散在基材上，将超细粒子分散液干燥，将超细粒子分散液干燥，得到金属或金属化合物的薄膜在基板上留下金属或金属化合物颗粒，加热金属或金属化合物颗粒以接合金属或金属化合物颗粒，并将金属或金属化合物颗粒退火成薄膜。

5. 发明申请

US20100105154A1 METHOD AND APPARATUS FOR PROCESSING SUBSTRATE 审中-公开
标题翻译：用于处理基板的方法和装置
公开(公告)号：US20100105154A1
公开(公告)日：2010-04-29
申请号：US12685820
申请日：2010-01-12
申请人： XINMING WANG , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga , Akira Owatari , Yukiko Nishioka
发明人： XINMING WANG , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga , Akira Owatari , Yukiko Nishioka
IPC分类号： H01L21/66 , H01L21/46
CPC分类号： H01L21/02068 , C23C18/1632 , C23C18/1689 , C23C18/1844 , H01L21/02074 , H01L21/288 , H01L21/67028 , H01L21/76849 , H01L21/76874 , H01L21/76883
摘要： A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate.
摘要翻译：基板处理方法可以通过在贱金属（例如互连）的暴露表面上通过无电解电镀牢固地形成金属膜，具有增加的生产量并且在母材中不形成空隙。基板处理方法包括：用包含含羧基的有机酸或其盐和表面活性剂的水溶液作为添加剂的清洗溶液清洗在表面形成的基体金属的基材的表面; 使清洗后的基板的表面与包含清洗液和含有催化剂金属离子的溶液的混合物的处理溶液接触，从而将催化剂施加到基板的表面; 以及通过在基板的催化剂涂覆表面上通过无电镀形成金属膜。

6. 发明授权

US07498261B2 Method and apparatus for forming metal film 有权
标题翻译：用于形成金属膜的方法和装置
公开(公告)号：US07498261B2
公开(公告)日：2009-03-03
申请号：US11219777
申请日：2005-09-07
申请人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga , Akira Owatari
发明人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga , Akira Owatari
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , C23C18/1619 , C23C18/1669 , C23C18/32 , H01L21/76846 , H01L21/76849 , H01L21/76874
摘要： A metal film-forming method of the present invention can form a metal film having different film qualities in the thickness direction, in a continuous manner using a single processing solution. The metal film-forming method including: providing a substrate having embedded interconnects formed in interconnect recesses provided in a surface of the substrate; and forming a metal film, having different film qualities in the thickness direction, on surfaces of the interconnects in a continuous manner by changing the flow state of a processing solution relative to the surface of the substrate while keeping the surface of the substrate in contact with the processing solution.
摘要翻译：本发明的金属成膜方法可以使用单一的处理液以连续的方式形成厚度方向的膜质量不同的金属膜。所述金属成膜方法包括：提供具有形成在所述基板的表面中的互连凹槽中的嵌入式互连的基板; 并且通过在保持基板的表面与基板的表面接触的同时改变处理液相对于基板的表面的流动状态，以连续的方式在相互连接的表面上形成在厚度方向上具有不同膜质量的金属膜处理方案。

7. 发明授权

US07407821B2 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US07407821B2
公开(公告)日：2008-08-05
申请号：US10874245
申请日：2004-06-24
申请人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Akira Fukunaga
发明人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Akira Fukunaga
IPC分类号： H01L21/66
CPC分类号： H01L21/76849 , C23C18/1608 , C23C18/1675 , C23C18/1692 , C23C18/1879 , H01L21/288 , H01L21/76864 , H01L21/76874 , H01L22/12 , H01L22/20 , H01L2223/54466
摘要： There is provided a substrate processing method and apparatus which can measure and monitor thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in process conditions, and which can therefore stably provide a product of constant quality. A substrate processing method for processing a substrate having a metal and an insulating material exposed on its surface in such a manner that a film thickness of the metal, with an exposed surface of the metal as a reference plane, is selectively or preferentially changed, including measuring a change in the film thickness and/or a film property of the metal during and/or immediately after processing, and monitoring processing and adjusting processing conditions based on results of this measurement.
摘要翻译：提供了可以根据需要测量和监测在基板上形成的膜的厚度和/或性能的基板处理方法和装置，并且可以快速地校正工艺条件的偏差，因此可以稳定地提供恒定品质的产品。一种基板处理方法，用于处理具有金属和绝缘材料的基板，所述基板以其金属的暴露表面作为基准面的方式选择性地或优先地改变的金属的膜厚度包括测量处理期间和/或紧随其后的金属的膜厚度和/或膜性质的变化，以及基于该测量结果的监测处理和调整处理条件。

8. 发明申请

US20070289604A1 Substrate Processing Apparatus 审中-公开
标题翻译：基板加工装置
公开(公告)号：US20070289604A1
公开(公告)日：2007-12-20
申请号：US11587974
申请日：2005-04-27
申请人： Yukio Fukunaga , Akira Susaki , Junji Kunisawa , Hiroyuki Ueyama , Shohei Shima , Akira Fukunaga , Hideki Tateishi , Junko Mine
发明人： Yukio Fukunaga , Akira Susaki , Junji Kunisawa , Hiroyuki Ueyama , Shohei Shima , Akira Fukunaga , Hideki Tateishi , Junko Mine
IPC分类号： C23G1/02 , B08B3/00 , G05D23/00 , G05D99/00
CPC分类号： H01L21/76838 , H01L21/02063 , H01L21/02068 , H01L21/67253
摘要： To provide an apparatus and a method capable of supplying a gas containing an evaporated reducing organic compound while strictly controlling the flow rate thereof to process a surface of a metal on a substrate without causing any deterioration of various types of films forming a semiconductor element with a simple apparatus configuration. The apparatus includes a process chamber 10 for keeping a substrate W therein, the process chamber 10 being gastight, an evacuation control system 20 for controlling the pressure in the process chamber 10, and a process gas supply system 30 for supplying a process gas containing a reducing organic compound to the process chamber 10. The process gas supply system 30 has an evaporator 32 keeping liquid material of the reducing organic compound therein and having an evaporating liquid surface S, a process gas pipe 18 for directing the process gas containing the reducing organic compound evaporated in the evaporator 32 into the process chamber 10, and a throttle element 40 disposed in the process gas pipe 18 for controlling the flow rate of the process gas to be supplied to the process chamber 10 by adjusting the opening of the throttle element 40. The opening of the throttle element 40 is so set that the pressure variation in the evaporator 32 can be maintained within a prescribed range.
摘要翻译：提供一种能够提供含有蒸发还原性有机化合物的气体的装置和方法，同时严格控制其流速来处理基板上的金属表面，而不会导致形成半导体元件的各种类型的膜的劣化简单的设备配置。该装置包括用于将基板W保持在其中的处理室10，气密的处理室10，用于控制处理室10中的压力的抽空控制系统20以及用于提供含有将有机化合物还原成处理室10。工艺气体供给系统30具有：蒸发器32，其中还原有机化合物的液体材料保持在其中并具有蒸发的液体表面S;一个工艺气体管道18，用于将含有在蒸发器32中蒸发的还原性有机化合物的工艺气体引导到过程设置在处理气体管道18中的节流元件40，用于通过调节节流元件40的开口来控制供给处理室10的处理气体的流量。节流元件40的开度被设定为使得蒸发器32中的压力变化可以保持在规定范围内。

9. 发明申请

US20070254558A1 Polishing Apparatus and Polishing Method 审中-公开
标题翻译：抛光装置和抛光方法
公开(公告)号：US20070254558A1
公开(公告)日：2007-11-01
申请号：US11661141
申请日：2005-08-26
申请人： Masako Kodera , Yoshihiro Mochizuki , Akira Fukuda , Akira Kodera , Hirokuni Hiyama , Manabu Tsujimura , Kazuto Hirokawa , Akira Fukunaga
发明人： Masako Kodera , Yoshihiro Mochizuki , Akira Fukuda , Akira Kodera , Hirokuni Hiyama , Manabu Tsujimura , Kazuto Hirokawa , Akira Fukunaga
IPC分类号： B24B37/04 , H01L21/00
CPC分类号： H01L21/6708 , B24B37/005 , B24B37/042 , B24B37/046 , B24B49/006 , B24B57/02
摘要： A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).
摘要翻译：抛光装置（30）具有抛光面（32），用于保持晶片（W）的顶环（36），使抛光面（32）和晶片（W）相对于运动的电机（46,56）相对于以及垂直移动机构（54），其在压制压力下将晶片（W）压靠在抛光表面（32）上。抛光装置（30）还具有控制器（44），用于在抛光速率与按压压力与相对速度的乘积不成比例的非普雷斯顿范围内调节抛光状态。抛光装置（30）可以同时实现向晶片（W）的表面均匀供应化学液体，并且在晶片表面（W）内均匀的研磨速率。

10. 发明授权

US07055535B2 Holding unit, processing apparatus and holding method of substrates 失效
标题翻译：保持单元，加工设备和基板的保持方法
公开(公告)号：US07055535B2
公开(公告)日：2006-06-06
申请号：US10629678
申请日：2003-07-30
申请人： Junji Kunisawa , Norio Kimura , Kenya Ito , Akira Fukunaga , Yuuki Inoue , Hiroshi Tomita , Soichi Nadahara , Motoyuki Sato
发明人： Junji Kunisawa , Norio Kimura , Kenya Ito , Akira Fukunaga , Yuuki Inoue , Hiroshi Tomita , Soichi Nadahara , Motoyuki Sato
IPC分类号： B08B3/08 , B25B11/00 , H01L21/306
CPC分类号： H01L21/6838 , Y10S134/902 , Y10T279/11
摘要： A holding unit holds a substrate to enable a surface of the substrate to be processed. The unit has a vacuum suction member that comes into contact with a peripheral portion of the surface of the substrate and sucks the substrate. A processing apparatus holds the wafer stably and allows an edge, a bevel portion and/or a back surface of the wafer to be processed.
摘要翻译：保持单元保持基板以使得能够处理基板的表面。该单元具有与基板的表面的周边部分接触并吸附基板的真空吸附构件。处理装置稳定地保持晶片，并且允许晶片的边缘，斜面部分和/或背面被处理。

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