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1. 发明授权

US06972256B2 Method and apparatus for forming thin film of metal 失效
标题翻译：用于形成金属薄膜的方法和装置
公开(公告)号：US06972256B2
公开(公告)日：2005-12-06
申请号：US09890330
申请日：2000-11-29
申请人： Akira Fukunaga , Kuniaki Horie , Naoaki Ogure , Takao Kato , Hiroshi Nagasawa , Shinji Kajita , Makoto Kubota
发明人： Akira Fukunaga , Kuniaki Horie , Naoaki Ogure , Takao Kato , Hiroshi Nagasawa , Shinji Kajita , Makoto Kubota
IPC分类号： C23C18/14 , H01L21/288 , H01L21/768 , H05K3/10 , H01L21/44
CPC分类号： H05K3/105 , C23C18/14 , H01L21/288 , H01L21/76885
摘要： The present invention relates to a method of and an apparatus for forming a thin metal film of copper, silver, or the like on a surface of a semiconductor or another substrate. A method of forming a thin metal film, comprises preparing a dispersed liquid having a metal-containing organic compound dispersed in a predetermined solvent, coating the dispersed liquid on a surface of a substrate and evaporating the solvent to form a coating layer, and applying an energy beam to the coating layer to decompose away an organic substance contained in the coating layer in an area irradiated with the energy beam and bond metal contained in the coating layer.According to the present invention, it is possible to form a thin metal film of good quality efficiently and stably. The thin metal film used as metal interconnects in highly integrated semiconductor circuits contributes to the progress of a process of fabricating semiconductor devices.
摘要翻译：本发明涉及在半导体或其他基板的表面上形成铜，银等薄金属膜的方法和装置。一种形成薄金属膜的方法包括制备分散在预定溶剂中的含金属有机化合物的分散液体，将分散的液体涂布在基材表面上并蒸发溶剂以形成涂层，能量束到涂层，以分解被包含在涂层中的能量束和接合金属的区域中的包覆层中的有机物质。根据本发明，可以形成薄膜金属膜高质量，高稳定地品质。在高度集成的半导体电路中用作金属互连的金属薄膜有助于制造半导体器件的工艺的进展。

2. 发明授权

US06730596B1 Method of and apparatus for forming interconnection 失效
标题翻译：形成互连的方法和装置
公开(公告)号：US06730596B1
公开(公告)日：2004-05-04
申请号：US09868140
申请日：2001-06-15
申请人： Akira Fukunaga , Kuniaki Horie , Naoaki Ogure , Takao Kato , Akihisa Hongo , Hiroshi Nagasawa
发明人： Akira Fukunaga , Kuniaki Horie , Naoaki Ogure , Takao Kato , Akihisa Hongo , Hiroshi Nagasawa
IPC分类号： H01L214763
CPC分类号： H05K3/4061 , B05C11/08 , C23C18/02 , C23C18/08 , H01L21/288 , H01L21/6715 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H05K1/0306 , H05K3/045 , H05K3/102 , H05K2201/0257 , H01L2924/00
摘要： The present invention relates particularly to a method of and an apparatus for forming a fine interconnection in a highly integrated circuit formed on a semiconductor substrate. The method has the steps of preparing a substrate having fine recesses formed in a surface thereof, dispersing ultrafine particles made at least partly of a metal in a predetermined solvent, producing an ultrafine particle dispersed liquid, supplying the ultrafine particle dispersed liquid to the fine recesses of the substrate, heating the substrate to melt and bond the metal, and chemical mechanical polishing the surface of the substrate to remove an excessively attached metal therefrom. According to the present invention, it is possible to stably deposit an interconnection metal of good quality using an inexpensive material.
摘要翻译：本发明尤其涉及形成在半导体衬底上的高度集成电路中形成精细互连的方法和装置。该方法具有如下步骤：制备在其表面形成有微细凹槽的基材，将至少部分由金属制成的超微粒子分散在预定溶剂中，制备超细颗粒分散液体，将超细颗粒分散液体供应到细小凹槽加热衬底以熔融和粘合金属，并化学机械抛光衬底的表面以从中除去过量附着的金属。根据本发明，可以使用便宜的材料稳定地沉积质量好的互连金属。

3. 发明授权

US06458694B2 High energy sputtering method for forming interconnects 失效
标题翻译：用于形成互连的高能溅射方法
公开(公告)号：US06458694B2
公开(公告)日：2002-10-01
申请号：US09767145
申请日：2001-01-23
申请人： Naoaki Ogure , Takao Kato , Kuniaki Horie , Yuji Araki
发明人： Naoaki Ogure , Takao Kato , Kuniaki Horie , Yuji Araki
IPC分类号： H01L21443
CPC分类号： H01L21/76873 , C23C14/046 , C23C14/35 , H01J37/3405 , H01L21/2855 , H01L21/76877
摘要： The present invention relates to a method and apparatus for forming interconnects on a substrate such as a semiconductor wafer by filling a conductive material such as copper (Cu) in fine recesses formed in a surface of the substrate. A method for forming interconnects comprises providing a substrate and a target composed of a conductive material in confrontation with each other in a chamber, introducing a sputtering gas into the chamber while a high voltage is applied between the substrate and the target to cause the sputtering gas to collide with the target, and depositing particles of the conductive material emitted from the target on the surface of the substrate to form a thin film, while sputter-etching the thin film by reflection sputtering gas molecules reflected from the target and having high energy.
摘要翻译：本发明涉及一种在诸如半导体晶片的衬底上形成互连的方法和装置，该方法和装置通过在衬底的表面中形成的精细凹槽中填充诸如铜（Cu）的导电材料。一种用于形成互连的方法包括在室内相互对置地提供由导电材料构成的基板和靶，将溅射气体引入室中，同时在基板和靶之间施加高电压以引起溅射气体与目标物碰撞，在基板的表面上沉积从靶发射的导电材料的粒子，形成薄膜，同时通过反射溅射气体分子溅射蚀刻薄膜，反射溅射气体分子并且具有高能量。

4. 发明授权

US06709555B1 Plating method, interconnection forming method, and apparatus for carrying out those methods 失效
标题翻译：电镀方法，互连形成方法以及用于实施这些方法的装置
公开(公告)号：US06709555B1
公开(公告)日：2004-03-23
申请号：US09868524
申请日：2001-06-19
申请人： Naoaki Ogure , Akira Fukunaga , Hiroshi Nagasawa
发明人： Naoaki Ogure , Akira Fukunaga , Hiroshi Nagasawa
IPC分类号： C25D1700
CPC分类号： H01L21/76843 , C23C18/06 , C23C18/08 , C23C18/1653 , H01L21/288 , H01L21/67034 , H01L21/67103 , H01L21/67109 , H01L21/6715 , H01L21/76873 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a plating method for use in forming a liner for plating in a conductor-embedding fine recess that is defined in a surface of a semiconductor substrate, and an interconnection forming method for use in forming an interconnection using such a liner, and characterized by reducing an organic metal compound in a nonaqueous solvent to plate a surface of a base material with metal. The plating method can easily be used similarly to an aqueous electroless plating process and is capable of forming a defect-free sound metal plated layer on the surface of a substrate which has a fine recess or the like for embedding a conductor therein, and the interconnection forming method is capable of forming an embedded interconnection that comprises a defect-free sound electric conductor in a fine recess.
摘要翻译：本发明涉及一种用于形成在半导体衬底的表面中限定的导体嵌入微细凹槽中的电镀衬层的电镀方法，以及用于使用这种衬垫形成互连的互连形成方法，其特征在于，在非水溶剂中还原有机金属化合物，用金属对基材的表面进行平版化。电镀方法可以容易地与含水化学镀方法相同地使用，并且能够在具有用于将导体嵌入其中的细凹槽等的基板的表面上形成无缺陷的金属电镀层，并且互连形成方法能够在细凹槽中形成包括无缺陷声导体的嵌入式互连。

5. 发明授权

US06921722B2 Coating, modification and etching of substrate surface with particle beam irradiation of the same 失效
标题翻译：用其粒子束照射进行涂层，改性和蚀刻基材表面
公开(公告)号：US06921722B2
公开(公告)日：2005-07-26
申请号：US09866843
申请日：2001-05-30
申请人： Naoaki Ogure , Kuniaki Horie , Yuji Araki , Hiroshi Nagasaka , Momoko Kakutani , Tohru Satake
发明人： Naoaki Ogure , Kuniaki Horie , Yuji Araki , Hiroshi Nagasaka , Momoko Kakutani , Tohru Satake
IPC分类号： C23C16/18 , C23C16/452 , C23C16/48 , H01J37/32 , H01L21/285 , H01L21/3213 , H01L21/302
CPC分类号： H01J37/32422 , C23C16/18 , C23C16/452 , C23C16/486 , C23C16/487 , H01J37/3233 , H01L21/28556 , H01L21/32136
摘要： There is provided a method of performing a surface treatment, such as coating, denaturation, modification and etching, on a surface of a substrate. The method comprises the steps of bringing a surface treatment gas into contact with a surface of a substrate, and irradiating the surface of the substrate with a fast particle beam to enhance an activity of the surface and/or the surface treatment gas, thereby facilitating a reaction between the surface and the gas. The fast particle beam may be selected from a group consisting of an electron beam, a charged particle beam, an atomic beam and molecular beam. For example, during a coating operation, chemical deposition of predetermined component elements of the gas onto the surface is effected and a predetermined portion of the surface of the substrate is irradiated with a particle beam to form a coating layer on the predetermined portion.
摘要翻译：提供了在基板的表面上进行表面处理如涂层，变性，改性和蚀刻的方法。该方法包括以下步骤：使表面处理气体与基板的表面接触，并用快速粒子束照射基板的表面，以增强表面和/或表面处理气体的活性，由此有助于表面和气体之间的反应。快速粒子束可以选自电子束，带电粒子束，原子束和分子束。例如，在涂布操作期间，将气体的预定组分元素化学沉积到表面上，并且用颗粒束照射基板的表面的预定部分，以在预定部分上形成涂层。

6. 发明授权

US06387182B1 Apparatus and method for processing substrate 失效
标题翻译：基板处理装置及方法
公开(公告)号：US06387182B1
公开(公告)日：2002-05-14
申请号：US09517699
申请日：2000-03-02
申请人： Kuniaki Horie , Yukio Fukunaga , Naoaki Ogure , Tsutomu Nakada , Masahito Abe , Mitsunao Shibasaki , Hidenao Suzuki , Yuji Araki , Kiwamu Tsukamoto
发明人： Kuniaki Horie , Yukio Fukunaga , Naoaki Ogure , Tsutomu Nakada , Masahito Abe , Mitsunao Shibasaki , Hidenao Suzuki , Yuji Araki , Kiwamu Tsukamoto
IPC分类号： B05C2100
CPC分类号： C23C16/45574 , C23C16/409 , C23C16/45514 , C23C16/45561 , C23C16/45563 , C23C16/4557
摘要： A substrate processing apparatus forms a thin film of high-dielectric or ferroelectric such as barium/strontium titanates, or a copper film for wiring on a substrate, and has a gas ejection head for individually introducing at least two gases including a material gas and ejecting the gases toward a substrate to be processed. The gas ejection head has at least two gas passageways for individually introducing the two gases, and at least two temperature control devices for individually controlling temperatures of the gases flowing through the gas passageways.
摘要翻译：基板处理装置在基板上形成诸如钡/锶钛酸盐或铜箔的高电介质或铁电薄膜，并且具有气体喷射头，用于分别引入包括材料气体的至少两种气体并喷射朝向待处理基板的气体。气体喷射头具有用于分别引入两种气体的至少两个气体通道和用于单独控制流过气体通道的气体的温度的至少两个温度控制装置。

7. 发明授权

US5862605A Vaporizer apparatus 失效
标题翻译：气化装置
公开(公告)号：US5862605A
公开(公告)日：1999-01-26
申请号：US862155
申请日：1997-05-22
申请人： Kuniaki Horie , Naoaki Ogure , Yukio Fukunaga , Akihisa Hongo
发明人： Kuniaki Horie , Naoaki Ogure , Yukio Fukunaga , Akihisa Hongo
IPC分类号： B01D1/00 , C23C16/448 , F26B19/00
CPC分类号： B01D1/00 , C23C16/4481
摘要： Heat can be supplied effectively to a porous member of a vaporizer apparatus so that a vaporizing operation can be carried out smoothly and efficiently. The vaporizer apparatus includes a vaporizer section having a porous member including a liquid receiving surface and a vapor discharge surface. A feed supply section supplies a liquid feed material to the liquid receiving surface of the porous member. A heating medium passage is in thermal contact with the porous member. A heating medium supply system flows a heating medium of a temperature higher than a vaporization temperature of the liquid feed material through the heating medium passage.
摘要翻译：可以有效地将热量提供给蒸发器装置的多孔构件，从而可以平稳有效地进行蒸发操作。蒸发器装置包括具有包括液体接收表面和蒸汽排放表面的多孔构件的蒸发器部分。供给部供给液体供给材料到多孔构件的液体接收表面。加热介质通道与多孔构件热接触。加热介质供应系统通过加热介质通道流动高于液体进料的蒸发温度的加热介质。

8. 发明申请

US20080271911A1 Submerged Electrode and Material Thereof 审中-公开
标题翻译：浸没电极及其材料
公开(公告)号：US20080271911A1
公开(公告)日：2008-11-06
申请号：US10567151
申请日：2004-08-04
申请人： Naoaki Ogure , Manabu Tsujimura
发明人： Naoaki Ogure , Manabu Tsujimura
IPC分类号： H01R11/00 , H05K1/00
CPC分类号： C02F1/46109 , C02F1/46114 , C02F2001/46138 , C02F2001/46152 , C02F2101/308 , C02F2103/34 , Y10T29/49117
摘要： [Problems] To provide an electrode that is stable in liquid and is capable of processing a large volume of liquid and a small electrode that is capable of processing a large volume of liquid at high speed; provide a liquid processor and method of processing liquid in which the electrode is used; provide and electrode material being hard to be damaged by thermal stress; and provide an electrode, liquid processor and method of processing liquid in which the electrode material is used.[Means for solving problems] An electrode of configuration resulting from coating solid pieces of 5 to 60 mm size with electrically conductive diamond, supporting them on supports and bringing the same into contact with each other so as to realize current passage as a whole is used in various electrochemical process. Also, an electrode including (1) electrically conductive substrate, (2) covering layer covering the electrically conductive substrate and (3) electrically conductive diamond particles fixed on the covering layer, wherein each of the electrically conductive diamond particles is partially brought into contact with the electrically conductive substrate and another portion thereof is partially exposed on the surface of the covering layer. Further, an electrode material, wherein an entire side surface of columnar or tubular substrate is coated with electrically conductive diamond is used.
摘要翻译： [问题]提供一种在液体中稳定并能够加工大量液体的电极和能够高速加工大量液体的小电极; 提供液体处理器和处理使用电极的液体的方法; 提供并且难以被热应力损坏的电极材料; 并提供电极，液体处理器和处理使用电极材料的液体的方法。 [解决问题的方法]使用导电金刚石涂覆5〜60mm尺寸的实心片，将其支撑在支撑体上并使其彼此接触以实现整体的电流通过的结构电极被使用在各种电化学过程中。此外，包括（1）导电基板，（2）覆盖导电基板的覆盖层的电极和（3）固定在覆盖层上的导电金刚石颗粒，其中每个导电金刚石颗粒部分地与导电性基板和其另一部分部分露出在覆盖层的表面上。此外，使用其中柱状或管状基板的整个侧表面涂覆有导电金刚石的电极材料。

9. 发明授权

US06391775B1 Method of forming embedded copper interconnections and embedded copper interconnection structure 失效
标题翻译：形成嵌入式铜互连和嵌入式铜互连结构的方法
公开(公告)号：US06391775B1
公开(公告)日：2002-05-21
申请号：US09660411
申请日：2000-09-12
申请人： Naoaki Ogure , Hiroaki Inoue
发明人： Naoaki Ogure , Hiroaki Inoue
IPC分类号： H01L2144
CPC分类号： H01L21/7684 , H01L21/288 , H01L21/76888 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： Embedded interconnections of copper are formed by forming an insulating layer, forming embedded interconnections of copper in the insulating layer, making an exposed upper surface of the insulating layer and an exposed surface of the embedded interconnections of copper coplanar according to chemical mechanical polishing, and forming a protective silver film on the exposed surface of the embedded interconnections of copper. These steps are repeated on the existing insulating layer thereby to produce multiple layers of embedded interconnections of copper. The exposed surface of the embedded interconnections of copper is plated with silver according to immersion plating.
摘要翻译：铜的嵌入式互连通过形成绝缘层而形成，在绝缘层中形成铜的嵌入互连，根据化学机械抛光使绝缘层的暴露的上表面和铜共面的嵌入式互连的暴露表面，以及形成在铜的嵌入式互连的暴露表面上的保护性银膜。在现有的绝缘层上重复这些步骤，从而产生多层铜的嵌入互连。根据浸镀法，铜的嵌入互连的暴露表面镀银。

10. 发明授权

US5820649A Method of and apparatus for continuously producing a solid material 失效
标题翻译：连续生产固体材料的方法和设备
公开(公告)号：US5820649A
公开(公告)日：1998-10-13
申请号：US843185
申请日：1997-04-14
申请人： Naoaki Ogure , Kazuyoshi Terashima
发明人： Naoaki Ogure , Kazuyoshi Terashima
IPC分类号： C30B29/06 , C30B15/00 , C30B15/02 , C30B15/20 , H01L31/04 , C03B20/00
CPC分类号： C30B29/06 , C30B15/002 , C30B15/02 , Y10T117/1044 , Y10T117/1052 , Y10T117/1056
摘要： A liquid material such as molten silicon is stored in a crucible. A liquid material, which is identical to and held in the same conditions as the liquid material in the crucible, is continuously supplied from an auxiliary crucible to the crucible to keep constant the surface level of the liquid material in the crucible. The liquid material is continuously pulled up from the crucible at a predetermined speed while the liquid material is being solidified into a solid material such as a ribbon-like thin web of single-crystal silicon.
摘要翻译：将诸如熔融硅的液体材料储存在坩埚中。将与坩埚中的液体材料相同并保持在相同条件下的液体材料从辅助坩埚连续供应到坩埚中，以保持坩埚中的液体材料的表面水平恒定。当液体材料固化成诸如单晶硅的带状薄腹板的固体材料时，液体材料以预定速度从坩埚中连续拉起。

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