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1. 发明授权

US08421941B2 TFT substrate and method of manufacturing the same 有权
标题翻译： TFT基板及其制造方法
公开(公告)号：US08421941B2
公开(公告)日：2013-04-16
申请号：US12831658
申请日：2010-07-07
申请人： Kumi Tsuda , Kazunori Inoue , Masaru Aoki
发明人： Kumi Tsuda , Kazunori Inoue , Masaru Aoki
IPC分类号： G02F1/136
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/41733 , H01L29/42384
摘要： There is provided a TFT substrate including a gate electrode having a thick film part and a thin film part with a smaller film thickness than the thick film part, a semiconductor active film formed above the thick film part and the thin film part of the gate electrode, an ohmic contact film formed on an inside of the semiconductor active film and on the semiconductor active film corresponding to the thin film part on an outside of the thick film part, and an electrode film constituting a source electrode and a drain electrode, having a planar shape identical to or on an inside of the ohmic contact film, and formed on the ohmic contact film.
摘要翻译：提供了一种TFT基板，包括具有厚膜部分的栅电极和具有比厚膜部分更薄的膜厚度的薄膜部分，形成在厚膜部分上方的半导体活性膜和栅电极的薄膜部分形成在半导体有源膜的内侧上的半导体有源膜上的欧姆接触膜和对应于厚膜部的外侧的薄膜部的半导体活性膜，以及构成源电极和漏电极的电极膜，具有平面形状与欧姆接触膜的内部相同或在其内部，并形成在欧姆接触膜上。

2. 发明申请

US20110017993A1 TFT SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： TFT基板及其制造方法
公开(公告)号：US20110017993A1
公开(公告)日：2011-01-27
申请号：US12831658
申请日：2010-07-07
申请人： Kumi TSUDA , Kazunori Inoue , Masaru Aoki
发明人： Kumi TSUDA , Kazunori Inoue , Masaru Aoki
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/41733 , H01L29/42384
摘要： There is provided a TFT substrate including a gate electrode having a thick film part and a thin film part with a smaller film thickness than the thick film part, a semiconductor active film formed above the thick film part and the thin film part of the gate electrode, an ohmic contact film formed on an inside of the semiconductor active film and on the semiconductor active film corresponding to the thin film part on an outside of the thick film part, and an electrode film constituting a source electrode and a drain electrode, having a planar shape identical to or on an inside of the ohmic contact film, and formed on the ohmic contact film.
摘要翻译：提供了一种TFT基板，包括具有厚膜部分的栅电极和具有比厚膜部分更薄的膜厚度的薄膜部分，形成在厚膜部分上方的半导体活性膜和栅电极的薄膜部分形成在半导体有源膜的内侧上的半导体有源膜上的欧姆接触膜和对应于厚膜部的外侧的薄膜部的半导体活性膜，以及构成源电极和漏电极的电极膜，具有平面形状与欧姆接触膜的内部相同或在其内部，并形成在欧姆接触膜上。

3. 发明授权

US08624244B2 Thin film transistor including a light-transmitting semiconductor film and active matrix substrate 有权
标题翻译：薄膜晶体管包括透光半导体膜和有源矩阵基板
公开(公告)号：US08624244B2
公开(公告)日：2014-01-07
申请号：US13346193
申请日：2012-01-09
申请人： Reiko Noguchi , Kazunori Inoue , Masaru Aoki , Toshihiko Iwasaka
发明人： Reiko Noguchi , Kazunori Inoue , Masaru Aoki , Toshihiko Iwasaka
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/12 , H01L29/76 , H01L31/112 , H01L29/15
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733
摘要： A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.
摘要翻译：薄膜晶体管包括栅电极，半导体层以及放置在半导体层上并与半导体层电连接的源电极和漏电极。半导体层包括透光半导体膜和放置在透光半导体膜上并具有比透光半导体膜低的透光率的欧姆导电膜。形成欧姆导电膜不会从透光半导体膜突出。欧姆导电膜以分离的部分形成在源电极和漏电极之间的通道部分之间。源电极和漏电极通过欧姆导电膜连接到透光半导体膜。

4. 发明申请

US20120187393A1 THIN FILM TRANSISTOR, ACTIVE MATRIX SUBSTRATE, AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管，有源矩阵基板及其制造方法
公开(公告)号：US20120187393A1
公开(公告)日：2012-07-26
申请号：US13346193
申请日：2012-01-09
申请人： Reiko NOGUCHI , Kazunori Inoue , Masaru Aoki , Toshihiko Iwasaka
发明人： Reiko NOGUCHI , Kazunori Inoue , Masaru Aoki , Toshihiko Iwasaka
IPC分类号： H01L33/08
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733
摘要： A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.
摘要翻译：薄膜晶体管包括栅电极，半导体层以及放置在半导体层上并与半导体层电连接的源电极和漏电极。半导体层包括透光半导体膜和放置在透光半导体膜上并具有比透光半导体膜低的透光率的欧姆导电膜。形成欧姆导电膜不会从透光半导体膜突出。欧姆导电膜以分离的部分形成在源电极和漏电极之间的通道部分之间。源电极和漏电极通过欧姆导电膜连接到透光半导体膜。

5. 发明授权

US06218206B1 Method for producing thin film transistor and thin film transistor using the same 有权
标题翻译：使用该薄膜晶体管和薄膜晶体管的薄膜晶体管的制造方法
公开(公告)号：US06218206B1
公开(公告)日：2001-04-17
申请号：US09153332
申请日：1998-09-15
申请人： Kazunori Inoue , Masaru Aoki , Munehito Kumagai , Shigeaki Noumi , Tohru Takeguchi
发明人： Kazunori Inoue , Masaru Aoki , Munehito Kumagai , Shigeaki Noumi , Tohru Takeguchi
IPC分类号： H01L2100
CPC分类号： H01L29/66765
摘要： To provide a method of producing a TFT array and a liquid crystal display apparatus in which a contact resistivity of a pixel electrode and a drain electrode through a contact hole in an interlayer insulating film can be not more than 10E4&OHgr; stably. A method of producing TFT of the present invention for a liquid crystal display apparatus includes the step of forming TFT, the step of forming an interlayer insulating film, in which the surface is made to be flat so that a level difference due to the TFT area is eliminated, on a transparent insulating substrate, the step of providing a contact hole on a drain electrode of the interlayer insulating film so as to forming a pixel electrode on the interlayer insulating film so that the pixel electrode is electrically connected with the drain electrode through the contact hole, and the step of after forming the contact hole on the interlayer insulating film, applying a surface treatment for cleaning the surface of the contact portion to the surface of the substrate including the surface of the drain electrode exposed from the contact hole.
摘要翻译：为了提供一种制造TFT阵列的方法和液晶显示装置，其中通过层间绝缘膜中的接触孔的像素电极和漏极的接触电阻率可以稳定在10E4OMEGA以下。本发明的液晶显示装置的TFT的制造方法包括以下步骤：形成TFT，形成层间绝缘膜的步骤，其中使所述表面平坦，使得由TFT区域引起的电平差在透明绝缘基板上消除了在层间绝缘膜的漏电极上设置接触孔的步骤，以在层间绝缘膜上形成像素电极，使得像素电极通过与漏极电连接而电连接所述接触孔以及在所述层间绝缘膜上形成所述接触孔之后的步骤，对所述接触部的表面进行表面处理，将所述接触部的表面进行表面处理，所述表面处理包括从所述接触孔露出的所述漏电极的表面。

6. 发明授权

US08558226B2 Thin film transistor substrate and manufacturing method for the same 有权
标题翻译：薄膜晶体管基板及其制造方法相同
公开(公告)号：US08558226B2
公开(公告)日：2013-10-15
申请号：US13480980
申请日：2012-05-25
申请人： Toshihiko Iwasaka , Kazunori Inoue , Masaru Aoki , Reiko Noguchi
发明人： Toshihiko Iwasaka , Kazunori Inoue , Masaru Aoki , Reiko Noguchi
IPC分类号： H01L33/08
CPC分类号： H01L27/1255 , H01L27/1225 , H01L27/1288
摘要： Provided is a thin film transistor having a semiconductor film disposed in a plurality of portions on a substrate, a source electrode and a drain electrode which are disposed, on a semiconductor film, in contact with the semiconductor film while being spaced from each other, and a gate electrode which is disposed across the source electrode and the drain electrode via a gate insulating film; an auxiliary capacitance electrode which is disposed on the semiconductor film while in contact with the semiconductor film; a source line which has the semiconductor film in a lower layer, extends from the source electrode; a gate line which extends from the gate electrode; a pixel electrode which is electrically connected to the drain electrode; and an auxiliary capacitance electrode connecting line which electrically connects the auxiliary capacitance electrodes to each other in the adjacent pixels.
摘要翻译：本发明提供一种薄膜晶体管，其具有设置在半导体膜上的与半导体膜接触的基板，源电极和漏电极的多个部分中的半导体膜，并且彼此间隔开;以及栅极电极，其经由栅极绝缘膜设置在所述源极电极和所述漏极电极之间; 辅助电容电极，与半导体膜接触地设置在半导体膜上; 在下层具有半导体膜的源极线从源电极延伸; 从栅电极延伸的栅极线; 与漏电极电连接的像素电极; 以及在相邻像素中将辅助电容电极彼此电连接的辅助电容电极连接线。

7. 发明授权

US08546804B2 Semiconductor device including a region containing nitrogen at an interface and display device 有权
标题翻译：半导体器件包括界面处含有氮的区域和显示装置
公开(公告)号：US08546804B2
公开(公告)日：2013-10-01
申请号：US13232251
申请日：2011-09-14
申请人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
发明人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00 , G02F1/136
CPC分类号： H01L29/458 , H01L29/42384 , H01L29/66765
摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.
摘要翻译：本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

8. 发明申请

US20120105298A1 ACOUSTIC WAVE FILTER 有权
标题翻译：声波滤波器
公开(公告)号：US20120105298A1
公开(公告)日：2012-05-03
申请号：US13344274
申请日：2012-01-05
申请人： Kazunori Inoue , Takashi Matsuda , Michio Miura
发明人： Kazunori Inoue , Takashi Matsuda , Michio Miura
IPC分类号： H03H9/64 , H01Q1/50 , H03H9/72
CPC分类号： H03H9/02992 , H03H9/02952 , H03H9/6483 , H03H9/725
摘要： A configuration that reduces a parasitic capacitance between wires is achieved at a low cost. Disclosed is an acoustic wave filter provided with a piezoelectric substrate 1, resonators 2a and 2b that include a comb-shaped electrode formed on the piezoelectric substrate 1, a wiring portion 3 that is connected to the comb-shaped electrode, and a dielectric layer 4 formed to cover the comb-shaped electrode. The wiring portion 3 is provided with a lower layer wiring portion 3d that is disposed in the same layer as the comb-shaped electrode and an upper layer wiring portion 3e that is disposed on the lower layer wiring portion 3d. The upper layer wiring portion 3e includes a region that has a wider electrode width than the electrode width of the lower layer wiring portion 3d.
摘要翻译：以低成本实现降低电线之间的寄生电容的结构。公开了一种设置有压电基板1的谐波滤波器，包括形成在压电基板1上的梳状电极的谐振器2a和2b，连接到梳状电极的布线部分3和介电层4 形成为覆盖梳状电极。布线部分3设置有与梳状电极相同的层中的下层布线部分3d和布置在下层布线部分3d上的上层布线部分3e。上层布线部分3e包括具有比下层布线部分3d的电极宽度更宽的电极宽度的区域。

9. 发明授权

US07841064B2 Method of manufacturing an acoustic wave device 失效
标题翻译：制造声波装置的方法
公开(公告)号：US07841064B2
公开(公告)日：2010-11-30
申请号：US11987173
申请日：2007-11-28
申请人： Shunichi Aikawa , Takumi Kooriike , Jyouji Kimura , Keiji Tsuda , Masayuki Kitajima , Kazunori Inoue , Takashi Matsuda
发明人： Shunichi Aikawa , Takumi Kooriike , Jyouji Kimura , Keiji Tsuda , Masayuki Kitajima , Kazunori Inoue , Takashi Matsuda
IPC分类号： H04R31/00
CPC分类号： H03H3/08 , Y10T29/42 , Y10T29/49005 , Y10T29/49007 , Y10T29/4908
摘要： A method of manufacturing an acoustic wave device includes forming a first sealing portion on a substrate having an acoustic wave element thereon so that a functional region, in which an acoustic wave oscillates, of the acoustic wave element acts as a first non-covered portion and a cutting region for individuating acts as a second non-covered portion, forming a second sealing portion on the first sealing portion so as to cover the first non-covered portion and the second non-covered portion, and cutting off the substrate and the second sealing portion so that the second non-covered portion is divided.
摘要翻译：一种制造声波器件的方法包括在其上具有声波元件的衬底上形成第一密封部分，使得声波元件的声波振荡的功能区域用作第一非覆盖部分，用于个体化作为第二非覆盖部分的切割区域，在所述第一密封部分上形成第二密封部分以覆盖所述第一非覆盖部分和所述第二未覆盖部分，并且切断所述基板，并且所述第二密封部分密封部分，使得第二未覆盖部分被分割。

10. 发明申请

US20100148887A1 ELASTIC WAVE DEVICE, DUPLEXER USING THE SAME, AND COMMUNICATION APPARATUS USING THE DUPLEXER 有权
标题翻译：弹性波形装置，使用相同的双工器，以及使用双工器的通信装置
公开(公告)号：US20100148887A1
公开(公告)日：2010-06-17
申请号：US12711871
申请日：2010-02-24
申请人： Takashi MATSUDA , Kazunori Inoue , Michio Miura
发明人： Takashi MATSUDA , Kazunori Inoue , Michio Miura
IPC分类号： H03H9/205
CPC分类号： H03H9/6476 , H03H9/02992 , H03H9/6483
摘要： An elastic wave device includes resonators having a piezoelectric substrate, a resonation unit formed on the piezoelectric substrate, and reflectors formed on respective sides of the resonation unit on the piezoelectric substrate, and bumps formed on the piezoelectric substrate. The resonators are configured such that two or more split resonators are connected in parallel, and a bump is formed in a region sandwiched between reflectors of the split resonators.
摘要翻译：弹性波装置包括具有压电基板的谐振器，形成在压电基板上的谐振单元和形成在压电基板上的谐振单元的各侧上的反射器，以及形成在压电基板上的凸块。谐振器被配置为使得两个或更多个分离谐振器并联连接，并且在夹在分离谐振器的反射器之间的区域中形成凸块。

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