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1. 发明授权

US07841064B2 Method of manufacturing an acoustic wave device 失效
标题翻译：制造声波装置的方法
公开(公告)号：US07841064B2
公开(公告)日：2010-11-30
申请号：US11987173
申请日：2007-11-28
申请人： Shunichi Aikawa , Takumi Kooriike , Jyouji Kimura , Keiji Tsuda , Masayuki Kitajima , Kazunori Inoue , Takashi Matsuda
发明人： Shunichi Aikawa , Takumi Kooriike , Jyouji Kimura , Keiji Tsuda , Masayuki Kitajima , Kazunori Inoue , Takashi Matsuda
IPC分类号： H04R31/00
CPC分类号： H03H3/08 , Y10T29/42 , Y10T29/49005 , Y10T29/49007 , Y10T29/4908
摘要： A method of manufacturing an acoustic wave device includes forming a first sealing portion on a substrate having an acoustic wave element thereon so that a functional region, in which an acoustic wave oscillates, of the acoustic wave element acts as a first non-covered portion and a cutting region for individuating acts as a second non-covered portion, forming a second sealing portion on the first sealing portion so as to cover the first non-covered portion and the second non-covered portion, and cutting off the substrate and the second sealing portion so that the second non-covered portion is divided.
摘要翻译：一种制造声波器件的方法包括在其上具有声波元件的衬底上形成第一密封部分，使得声波元件的声波振荡的功能区域用作第一非覆盖部分，用于个体化作为第二非覆盖部分的切割区域，在所述第一密封部分上形成第二密封部分以覆盖所述第一非覆盖部分和所述第二未覆盖部分，并且切断所述基板，并且所述第二密封部分密封部分，使得第二未覆盖部分被分割。

2. 发明申请

US20080125662A1 Acoustic wave device and method of manufacturing the same 失效
标题翻译：声波装置及其制造方法
公开(公告)号：US20080125662A1
公开(公告)日：2008-05-29
申请号：US11987173
申请日：2007-11-28
申请人： Shunichi Aikawa , Takumi Kooriike , Jyouji Kimura , Keiji Tsuda , Masayuki Kitajima , Kazunori Inoue , Takashi Matsuda
发明人： Shunichi Aikawa , Takumi Kooriike , Jyouji Kimura , Keiji Tsuda , Masayuki Kitajima , Kazunori Inoue , Takashi Matsuda
IPC分类号： A61B8/12 , H04R31/00
CPC分类号： H03H3/08 , Y10T29/42 , Y10T29/49005 , Y10T29/49007 , Y10T29/4908
摘要： A method of manufacturing an acoustic wave device includes forming a first sealing portion on a substrate having an acoustic wave element thereon so that a functional region, in which an acoustic wave oscillates, of the acoustic wave element acts as a first non-covered portion and a cutting region for individuating acts as a second non-covered portion, forming a second sealing portion on the first sealing portion so as to cover the first non-covered portion and the second non-covered portion, and cutting off the substrate and the second sealing portion so that the second non-covered portion is divided.
摘要翻译：一种制造声波器件的方法包括在其上具有声波元件的衬底上形成第一密封部分，使得声波元件的声波振荡的功能区域用作第一非覆盖部分，用于个体化作为第二非覆盖部分的切割区域，在所述第一密封部分上形成第二密封部分以覆盖所述第一非覆盖部分和所述第二未覆盖部分，并且切断所述基板，并且所述第二密封部分密封部分，使得第二未覆盖部分被分割。

3. 发明授权

US07721411B2 Method of manufacturing an acoustic wave device 失效
标题翻译：制造声波装置的方法
公开(公告)号：US07721411B2
公开(公告)日：2010-05-25
申请号：US11987175
申请日：2007-11-28
申请人： Shunichi Aikawa , Jyouji Kimura , Keiji Tsuda , Kazunori Inoue , Takashi Matsuda
发明人： Shunichi Aikawa , Jyouji Kimura , Keiji Tsuda , Kazunori Inoue , Takashi Matsuda
IPC分类号： H04R31/00
CPC分类号： H03H3/08 , H03H9/1092 , Y10T29/42 , Y10T29/49005 , Y10T29/4908 , Y10T29/49798
摘要： A method of manufacturing an acoustic wave device includes: forming a conductive pattern on a wafer made of a piezoelectric substrate having an acoustic wave element, the conductive pattern including a first conductive pattern being continuously formed on a cutting region for individuating the wafer, a second conductive pattern being formed on an electrode region where a plated electrode is to be formed and being connected to the acoustic wave element and a third conductive pattern connecting the first conductive pattern and the second pattern; forming an insulating layer on the wafer so as to have an opening on the second conductive pattern; forming the plated electrode on the second conductive pattern by providing an electrical current to the second conductive pattern via the first conductive pattern and the third conductive pattern; and cutting off and individuating the wafer along the cutting region.
摘要翻译：一种制造声波器件的方法包括：在由具有声波元件的压电基片制成的晶片上形成导电图案，所述导电图案包括连续形成在用于个别晶片的切割区域上的第一导电图案，第二导电图案形成在要形成镀覆电极的电极区域上，并连接到声波元件;连接第一导电图案和第二图案的第三导电图案; 在所述晶片上形成绝缘层，以在所述第二导电图案上具有开口; 通过经由第一导电图案和第三导电图案向第二导电图案提供电流，在第二导电图案上形成电镀电极; 并沿着切割区域切割和分离晶片。

4. 发明申请

US20080174207A1 ACOUSTIC WAVE DEVICE 有权
标题翻译：声波设备
公开(公告)号：US20080174207A1
公开(公告)日：2008-07-24
申请号：US12018460
申请日：2008-01-23
申请人： Keiji Tsuda , Jyouji Kimura , Shunichi Aikawa , Kazunori Inoue , Takashi Matsuda
发明人： Keiji Tsuda , Jyouji Kimura , Shunichi Aikawa , Kazunori Inoue , Takashi Matsuda
IPC分类号： H01L41/08
CPC分类号： H03H3/08 , H01L2224/11
摘要： An acoustic wave device includes an acoustic wave element formed on a substrate, a first seal portion provided on the substrate so as to form a cavity above the acoustic wave element, and a second seal portion provided on the first seal portion, the first seal portion having a step so that the first seal portion has a width on a first side and another width on a second side arranged so that the first side is closer than the second side to the substrate, and the width on the first side is greater than the another width on the second side.
摘要翻译：声波装置包括形成在基板上的声波元件，设置在基板上以在声波元件上方形成空腔的第一密封部分和设置在第一密封部分上的第二密封部分，第一密封部分具有使所述第一密封部在第一侧具有宽度，在所述第二侧具有第二侧的另一宽度，使得所述第一侧比所述基板的所述第二侧更靠近，所述第一侧的宽度大于所述第一侧的宽度第二侧的另一个宽度。

5. 发明授权

US07586240B2 Acoustic wave device 有权
标题翻译：声波装置
公开(公告)号：US07586240B2
公开(公告)日：2009-09-08
申请号：US12018460
申请日：2008-01-23
申请人： Keiji Tsuda , Jyouji Kimura , Shunichi Aikawa , Kazunori Inoue , Takashi Matsuda
发明人： Keiji Tsuda , Jyouji Kimura , Shunichi Aikawa , Kazunori Inoue , Takashi Matsuda
IPC分类号： H01L41/08
CPC分类号： H03H3/08 , H01L2224/11
摘要： An acoustic wave device includes an acoustic wave element formed on a substrate, a first seal portion provided on the substrate so as to form a cavity above the acoustic wave element, and a second seal portion provided on the first seal portion, the first seal portion having a step so that the first seal portion has a width on a first side and another width on a second side arranged so that the first side is closer than the second side to the substrate, and the width on the first side is greater than the another width on the second side.
摘要翻译：声波装置包括形成在基板上的声波元件，设置在基板上以在声波元件上方形成空腔的第一密封部分和设置在第一密封部分上的第二密封部分，第一密封部分具有使所述第一密封部在第一侧具有宽度，在所述第二侧具有第二侧的另一宽度，使得所述第一侧比所述基板的所述第二侧更靠近，所述第一侧的宽度大于所述第一侧的宽度第二侧的另一个宽度。

6. 发明申请

US20080122318A1 Acoustic wave device and method of manufacturing the same 失效
标题翻译：声波装置及其制造方法
公开(公告)号：US20080122318A1
公开(公告)日：2008-05-29
申请号：US11987175
申请日：2007-11-28
申请人： Shunichi Aikawa , Jyouji Kimura , Keiji Tsuda , Kazunori Inoue , Takashi Matsuda
发明人： Shunichi Aikawa , Jyouji Kimura , Keiji Tsuda , Kazunori Inoue , Takashi Matsuda
IPC分类号： H01L41/083 , B05D5/12
CPC分类号： H03H3/08 , H03H9/1092 , Y10T29/42 , Y10T29/49005 , Y10T29/4908 , Y10T29/49798
摘要： A method of manufacturing an acoustic wave device includes: forming a conductive pattern on a wafer made of a piezoelectric substrate having an acoustic wave element, the conductive pattern including a first conductive pattern, a second conductive pattern and a third conductive pattern, the first conductive pattern being continuously formed on a cutting region for individuating the wafer, the second conductive pattern being formed on an electrode region where a plated electrode is to be formed and being connected to the acoustic wave element, the third conductive pattern connecting the first conductive pattern and the second conductive pattern; forming an insulating layer on the wafer so as to have a opening on the second conductive pattern; forming the plated electrode on the second conductive pattern by providing an electrical current to the second conductive pattern via the first conductive pattern and the third conductive pattern; and cutting off and individuating the wafer along the cutting region.
摘要翻译：一种制造声波器件的方法包括：在由具有声波元件的压电基片制成的晶片上形成导电图案，所述导电图案包括第一导电图案，第二导电图案和第三导电图案，所述第一导电图案连续地形成在用于个别晶片的切割区域上，第二导电图案形成在要形成镀覆电极的电极区域上，并连接到声波元件，第三导电图案连接第一导电图案和第二导电图案; 在所述晶片上形成绝缘层以在所述第二导电图案上具有开口; 通过经由第一导电图案和第三导电图案向第二导电图案提供电流，在第二导电图案上形成电镀电极; 并沿着切割区域切割和分离晶片。

7. 发明申请

US20080122314A1 Acoustic wave device 审中-公开
标题翻译：声波装置
公开(公告)号：US20080122314A1
公开(公告)日：2008-05-29
申请号：US11987268
申请日：2007-11-28
申请人： Takashi Yamashita , Keiji Tsuda , Shunichi Aikawa , Kazunori Inoue , Takashi Matsuda
发明人： Takashi Yamashita , Keiji Tsuda , Shunichi Aikawa , Kazunori Inoue , Takashi Matsuda
IPC分类号： H01L41/08
CPC分类号： H03H9/1092 , H01L2224/11 , H01L2924/16235 , H03H9/059
摘要： An acoustic wave device includes an acoustic wave element provided on a substrate, a wiring that is provided on the substrate and is electrically connected to the acoustic wave element, a sealing portion that is provided on the substrate so as to cover the acoustic wave element and the wiring, and an insulating layer that is provided on a whole area between the substrate and the sealing portion and between the wiring and the sealing portion.
摘要翻译：声波装置包括：设置在基板上的声波元件，设置在基板上并与声波元件电连接的布线;密封部，其设置在基板上以覆盖声波元件;以及布线和设置在基板和密封部分之间以及布线和密封部分之间的整个区域上的绝缘层。

8. 发明授权

US08004160B2 Acoustic wave device with adhesive layer and method of manufacturing the same 有权
标题翻译：具有粘合剂层的声波装置及其制造方法
公开(公告)号：US08004160B2
公开(公告)日：2011-08-23
申请号：US12341279
申请日：2008-12-22
申请人： Keiji Tsuda , Jyouji Kimura , Shunichi Aikawa
发明人： Keiji Tsuda , Jyouji Kimura , Shunichi Aikawa
IPC分类号： H01L41/04 , H01L41/08
CPC分类号： H03H9/059 , H01L2224/11 , H01L2924/16235 , H03H9/1092 , Y10T29/42
摘要： An acoustic wave device includes a substrate, an acoustic wave element, an electrode pad, a resin portion and a metal post. The acoustic wave element is provided on the substrate. The electrode pad is provided on the substrate, is electrically coupled to the acoustic wave element, and has an Au layer and an adhesive layer formed on the Au layer and having an opening. The resin portion is provided on the substrate so as to cover the acoustic wave element and the electrode pad, and has a through-hole formed to expose a surface of the electrode pad. The metal post is provided in the through-hole and contacts with the Au layer through the opening of the adhesive layer. The adhesive layer is provided between the Au layer and the resin portion.
摘要翻译：声波装置包括基板，声波元件，电极焊盘，树脂部和金属柱。声波元件设置在基板上。电极焊盘设置在基板上，电耦合到声波元件，并且具有形成在Au层上并具有开口的Au层和粘合层。树脂部分设置在基板上以覆盖声波元件和电极焊盘，并且具有形成为暴露电极焊盘的表面的通孔。金属柱设置在通孔中，并通过粘合剂层的开口与Au层接触。粘合剂层设置在Au层和树脂部之间。

9. 发明申请

US20090160290A1 ACOUSTIC WAVE DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：声波装置及其制造方法
公开(公告)号：US20090160290A1
公开(公告)日：2009-06-25
申请号：US12341279
申请日：2008-12-22
申请人： Keiji Tsuda , Jyouji Kimura , Shunichi Aikawa
发明人： Keiji Tsuda , Jyouji Kimura , Shunichi Aikawa
IPC分类号： H01L41/047 , H01L41/22
CPC分类号： H03H9/059 , H01L2224/11 , H01L2924/16235 , H03H9/1092 , Y10T29/42
摘要： An acoustic wave device includes a substrate, an acoustic wave element, an electrode pad, a resin portion and a metal post. The acoustic wave element is provided on the substrate. The electrode pad is provided on the substrate, is electrically coupled to the acoustic wave element, and has an Au layer and an adhesive layer formed on the Au layer and having an opening. The resin portion is provided on the substrate so as to cover the acoustic wave element and the electrode pad, and has a through-hole formed to expose a surface of the electrode pad. The metal post is provided in the through-hole and contacts with the Au layer through the opening of the adhesive layer. The adhesive layer is provided between the Au layer and the resin portion.
摘要翻译：声波装置包括基板，声波元件，电极焊盘，树脂部和金属柱。声波元件设置在基板上。电极焊盘设置在基板上，电耦合到声波元件，并且具有形成在Au层上并具有开口的Au层和粘合层。树脂部分设置在基板上以覆盖声波元件和电极焊盘，并且具有形成为暴露电极焊盘的表面的通孔。金属柱设置在通孔中，并通过粘合剂层的开口与Au层接触。粘合剂层设置在Au层和树脂部之间。

10. 发明申请

US20090175470A1 ACOUSTIC WAVE DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：声波装置及其制造方法
公开(公告)号：US20090175470A1
公开(公告)日：2009-07-09
申请号：US12349265
申请日：2009-01-06
申请人： Shunichi Aikawa , Masayuki Kitajima , Keiji Tsuda
发明人： Shunichi Aikawa , Masayuki Kitajima , Keiji Tsuda
IPC分类号： H04R25/00 , H04R31/00
CPC分类号： H04R31/00 , H01L2224/11 , H04R17/00 , H04R2499/11 , Y10T29/49005
摘要： An acoustic wave device includes a substrate; an acoustic wave element provided on the substrate; a terminal that is provided on the substrate and is electrically coupled to the acoustic wave element; a first insulating layer that is provided on the substrate and has a first opening at a region thereof overlapped with at least a part of the terminal; a second insulating layer that has an second opening at a region thereof overlapped with at least a part of the first opening and is provided on the first insulating layer and the acoustic wave element so that a cavity is formed above the acoustic wave element; a third insulating layer that has a third opening including the region where the first opening and the second opening are overlapped with each other, and is provided on the second insulating layer; a metal post that is electrically coupled to the terminal and is provided in the first opening, the second opening and the third opening; and a solder ball provided on the metal post.
摘要翻译：声波装置包括：基板; 设置在基板上的声波元件; 设置在所述基板上并且电耦合到所述声波元件的端子; 第一绝缘层，其设置在所述基板上，并且在其与所述端子的至少一部分重叠的区域具有第一开口; 第二绝缘层，其在与第一开口的至少一部分重叠的区域处具有第二开口，并且设置在第一绝缘层和声波元件上，使得在声波元件上形成空腔; 第三绝缘层，其具有包括第一开口和第二开口彼此重叠的区域的第三开口，并且设置在第二绝缘层上; 电连接到端子并设置在第一开口，第二开口和第三开口中的金属柱; 以及设置在金属柱上的焊球。

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