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1. 发明授权

US08421941B2 TFT substrate and method of manufacturing the same 有权
标题翻译： TFT基板及其制造方法
公开(公告)号：US08421941B2
公开(公告)日：2013-04-16
申请号：US12831658
申请日：2010-07-07
申请人： Kumi Tsuda , Kazunori Inoue , Masaru Aoki
发明人： Kumi Tsuda , Kazunori Inoue , Masaru Aoki
IPC分类号： G02F1/136
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/41733 , H01L29/42384
摘要： There is provided a TFT substrate including a gate electrode having a thick film part and a thin film part with a smaller film thickness than the thick film part, a semiconductor active film formed above the thick film part and the thin film part of the gate electrode, an ohmic contact film formed on an inside of the semiconductor active film and on the semiconductor active film corresponding to the thin film part on an outside of the thick film part, and an electrode film constituting a source electrode and a drain electrode, having a planar shape identical to or on an inside of the ohmic contact film, and formed on the ohmic contact film.
摘要翻译：提供了一种TFT基板，包括具有厚膜部分的栅电极和具有比厚膜部分更薄的膜厚度的薄膜部分，形成在厚膜部分上方的半导体活性膜和栅电极的薄膜部分形成在半导体有源膜的内侧上的半导体有源膜上的欧姆接触膜和对应于厚膜部的外侧的薄膜部的半导体活性膜，以及构成源电极和漏电极的电极膜，具有平面形状与欧姆接触膜的内部相同或在其内部，并形成在欧姆接触膜上。

2. 发明申请

US20110017993A1 TFT SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： TFT基板及其制造方法
公开(公告)号：US20110017993A1
公开(公告)日：2011-01-27
申请号：US12831658
申请日：2010-07-07
申请人： Kumi TSUDA , Kazunori Inoue , Masaru Aoki
发明人： Kumi TSUDA , Kazunori Inoue , Masaru Aoki
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/41733 , H01L29/42384
摘要： There is provided a TFT substrate including a gate electrode having a thick film part and a thin film part with a smaller film thickness than the thick film part, a semiconductor active film formed above the thick film part and the thin film part of the gate electrode, an ohmic contact film formed on an inside of the semiconductor active film and on the semiconductor active film corresponding to the thin film part on an outside of the thick film part, and an electrode film constituting a source electrode and a drain electrode, having a planar shape identical to or on an inside of the ohmic contact film, and formed on the ohmic contact film.
摘要翻译：提供了一种TFT基板，包括具有厚膜部分的栅电极和具有比厚膜部分更薄的膜厚度的薄膜部分，形成在厚膜部分上方的半导体活性膜和栅电极的薄膜部分形成在半导体有源膜的内侧上的半导体有源膜上的欧姆接触膜和对应于厚膜部的外侧的薄膜部的半导体活性膜，以及构成源电极和漏电极的电极膜，具有平面形状与欧姆接触膜的内部相同或在其内部，并形成在欧姆接触膜上。

3. 发明授权

US08558226B2 Thin film transistor substrate and manufacturing method for the same 有权
标题翻译：薄膜晶体管基板及其制造方法相同
公开(公告)号：US08558226B2
公开(公告)日：2013-10-15
申请号：US13480980
申请日：2012-05-25
申请人： Toshihiko Iwasaka , Kazunori Inoue , Masaru Aoki , Reiko Noguchi
发明人： Toshihiko Iwasaka , Kazunori Inoue , Masaru Aoki , Reiko Noguchi
IPC分类号： H01L33/08
CPC分类号： H01L27/1255 , H01L27/1225 , H01L27/1288
摘要： Provided is a thin film transistor having a semiconductor film disposed in a plurality of portions on a substrate, a source electrode and a drain electrode which are disposed, on a semiconductor film, in contact with the semiconductor film while being spaced from each other, and a gate electrode which is disposed across the source electrode and the drain electrode via a gate insulating film; an auxiliary capacitance electrode which is disposed on the semiconductor film while in contact with the semiconductor film; a source line which has the semiconductor film in a lower layer, extends from the source electrode; a gate line which extends from the gate electrode; a pixel electrode which is electrically connected to the drain electrode; and an auxiliary capacitance electrode connecting line which electrically connects the auxiliary capacitance electrodes to each other in the adjacent pixels.
摘要翻译：本发明提供一种薄膜晶体管，其具有设置在半导体膜上的与半导体膜接触的基板，源电极和漏电极的多个部分中的半导体膜，并且彼此间隔开;以及栅极电极，其经由栅极绝缘膜设置在所述源极电极和所述漏极电极之间; 辅助电容电极，与半导体膜接触地设置在半导体膜上; 在下层具有半导体膜的源极线从源电极延伸; 从栅电极延伸的栅极线; 与漏电极电连接的像素电极; 以及在相邻像素中将辅助电容电极彼此电连接的辅助电容电极连接线。

4. 发明授权

US08624244B2 Thin film transistor including a light-transmitting semiconductor film and active matrix substrate 有权
标题翻译：薄膜晶体管包括透光半导体膜和有源矩阵基板
公开(公告)号：US08624244B2
公开(公告)日：2014-01-07
申请号：US13346193
申请日：2012-01-09
申请人： Reiko Noguchi , Kazunori Inoue , Masaru Aoki , Toshihiko Iwasaka
发明人： Reiko Noguchi , Kazunori Inoue , Masaru Aoki , Toshihiko Iwasaka
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/12 , H01L29/76 , H01L31/112 , H01L29/15
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733
摘要： A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.
摘要翻译：薄膜晶体管包括栅电极，半导体层以及放置在半导体层上并与半导体层电连接的源电极和漏电极。半导体层包括透光半导体膜和放置在透光半导体膜上并具有比透光半导体膜低的透光率的欧姆导电膜。形成欧姆导电膜不会从透光半导体膜突出。欧姆导电膜以分离的部分形成在源电极和漏电极之间的通道部分之间。源电极和漏电极通过欧姆导电膜连接到透光半导体膜。

5. 发明申请

US20120187393A1 THIN FILM TRANSISTOR, ACTIVE MATRIX SUBSTRATE, AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管，有源矩阵基板及其制造方法
公开(公告)号：US20120187393A1
公开(公告)日：2012-07-26
申请号：US13346193
申请日：2012-01-09
申请人： Reiko NOGUCHI , Kazunori Inoue , Masaru Aoki , Toshihiko Iwasaka
发明人： Reiko NOGUCHI , Kazunori Inoue , Masaru Aoki , Toshihiko Iwasaka
IPC分类号： H01L33/08
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733
摘要： A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.
摘要翻译：薄膜晶体管包括栅电极，半导体层以及放置在半导体层上并与半导体层电连接的源电极和漏电极。半导体层包括透光半导体膜和放置在透光半导体膜上并具有比透光半导体膜低的透光率的欧姆导电膜。形成欧姆导电膜不会从透光半导体膜突出。欧姆导电膜以分离的部分形成在源电极和漏电极之间的通道部分之间。源电极和漏电极通过欧姆导电膜连接到透光半导体膜。

6. 发明授权

US06218206B1 Method for producing thin film transistor and thin film transistor using the same 有权
标题翻译：使用该薄膜晶体管和薄膜晶体管的薄膜晶体管的制造方法
公开(公告)号：US06218206B1
公开(公告)日：2001-04-17
申请号：US09153332
申请日：1998-09-15
申请人： Kazunori Inoue , Masaru Aoki , Munehito Kumagai , Shigeaki Noumi , Tohru Takeguchi
发明人： Kazunori Inoue , Masaru Aoki , Munehito Kumagai , Shigeaki Noumi , Tohru Takeguchi
IPC分类号： H01L2100
CPC分类号： H01L29/66765
摘要： To provide a method of producing a TFT array and a liquid crystal display apparatus in which a contact resistivity of a pixel electrode and a drain electrode through a contact hole in an interlayer insulating film can be not more than 10E4&OHgr; stably. A method of producing TFT of the present invention for a liquid crystal display apparatus includes the step of forming TFT, the step of forming an interlayer insulating film, in which the surface is made to be flat so that a level difference due to the TFT area is eliminated, on a transparent insulating substrate, the step of providing a contact hole on a drain electrode of the interlayer insulating film so as to forming a pixel electrode on the interlayer insulating film so that the pixel electrode is electrically connected with the drain electrode through the contact hole, and the step of after forming the contact hole on the interlayer insulating film, applying a surface treatment for cleaning the surface of the contact portion to the surface of the substrate including the surface of the drain electrode exposed from the contact hole.
摘要翻译：为了提供一种制造TFT阵列的方法和液晶显示装置，其中通过层间绝缘膜中的接触孔的像素电极和漏极的接触电阻率可以稳定在10E4OMEGA以下。本发明的液晶显示装置的TFT的制造方法包括以下步骤：形成TFT，形成层间绝缘膜的步骤，其中使所述表面平坦，使得由TFT区域引起的电平差在透明绝缘基板上消除了在层间绝缘膜的漏电极上设置接触孔的步骤，以在层间绝缘膜上形成像素电极，使得像素电极通过与漏极电连接而电连接所述接触孔以及在所述层间绝缘膜上形成所述接触孔之后的步骤，对所述接触部的表面进行表面处理，将所述接触部的表面进行表面处理，所述表面处理包括从所述接触孔露出的所述漏电极的表面。

7. 发明授权

US08208103B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US08208103B2
公开(公告)日：2012-06-26
申请号：US12432320
申请日：2009-04-29
申请人： Kenichi Miyamoto , Masami Hayashi , Manabu Tanahara , Masaru Aoki
发明人： Kenichi Miyamoto , Masami Hayashi , Manabu Tanahara , Masaru Aoki
IPC分类号： G02F1/1335 , G02F1/1333 , G02F1/1339
CPC分类号： G02F1/13394 , G02F1/133555
摘要： There is provided a liquid crystal display device having a pixel electrode including a transmissive pixel electrode and a reflective pixel electrode. The liquid crystal display device includes a TFT array substrate, an opposing substrate, a sealing material that bonds the both substrates, an organic film formed on the TFT array substrate and having a thick film portion provided below the pixel electrode and a thin film portion provided outside the thick film portion, a columnar spacer formed on the opposing substrate and holding substrate gap between the both substrates, and a gap retaining pad formed in a region outside the display region and inside the sealing material to adjust the substrate gap outside the display region according to the substrate gap on the pixel electrode. The columnar spacer holds the substrate gap between the both substrates over the gap retaining pad and over the pixel electrode.
摘要翻译：提供一种液晶显示装置，其具有包括透射像素电极和反射像素电极的像素电极。液晶显示装置包括TFT阵列基板，相对基板，粘合两基板的密封材料，形成在TFT阵列基板上并具有设置在像素电极下方的厚膜部分的有机膜，以及薄膜部分在厚膜部分外部，形成在相对基板上并保持两个基板之间的基板间隙的柱状间隔件，以及形成在显示区域外部和密封材料内部的区域中的间隙保持垫，以将显示区域外部的基板间隙调整根据像素电极上的衬底间隙。柱形间隔件在间隙保持垫上并在像素电极之上保持两个基板之间的衬底间隙。

8. 发明授权

US08080624B2 Propylene-based polymer, production method therefor, composition using the same, and application thereof 有权
标题翻译：丙烯系聚合物及其制造方法，使用该聚合物的组合物及其应用
公开(公告)号：US08080624B2
公开(公告)日：2011-12-20
申请号：US12672089
申请日：2008-05-16
申请人： Masaaki Ito , Hideshi Uchino , Yoshiyuki Ishihama , Masaru Aoki , Masato Nakano , Fusaaki Katou , Kazuo Asuka
发明人： Masaaki Ito , Hideshi Uchino , Yoshiyuki Ishihama , Masaru Aoki , Masato Nakano , Fusaaki Katou , Kazuo Asuka
IPC分类号： C08F110/06 , C08F4/6592 , B01J31/22
CPC分类号： C08F10/06 , C08F4/65904 , C08F4/65912 , C08F4/65916 , C08F110/06 , C08F210/06 , Y10S526/943 , C08F4/6492 , C08F4/65927 , C08F2500/15 , C08F2500/11 , C08F2500/14 , C08F2500/12 , C08F210/16
摘要： A propylene-based polymer which is suitably applicable to foam molding, sheet molding, blow molding or the like, because of having good flow characteristics, high melt tension, high swell ratio and thus good molding workability.It is attained by a propylene-based polymer or the like characterized by satisfying the following requirements (i) to (vi).Requirement (i): MFR is 0.1 g/10 minutes to 100 g/10 minutes.Requirement (ii): Q value by GPC is 3.5 to 10.5.Requirement (iii): ratio of components with a molecular weight of equal to or higher than 2,000,000, in a molecular weight distribution curve obtained by GPC, is equal to or larger than 0.4% by weight and less than 10% by weight.Requirement (iv): components, which elute at a temperature of equal to or lower than 40° C., are equal to or less than 3.0% by weight, in temperature rising elution fractionation by ODCB.Requirement (v): isotactic triad fraction (mm) measured with 13C-NMR is equal to or higher than 95%.Requirement (vi): strain hardening degree (λmax), in measurement of extensional viscosity, is equal to or higher than 6.0.
摘要翻译：由于具有良好的流动特性，高熔体张力，高膨胀比和良好的成型加工性，适用于发泡成型，片状成型，吹塑等的丙烯类聚合物。通过满足以下要求（i）至（vi）的特征在于基于丙烯的聚合物等来实现。要求（i）：MFR为0.1g / 10分钟至100g / 10分钟。要求（ii）：GPC的Q值为3.5〜10.5。要求（iii）：通过GPC获得的分子量分布曲线中分子量等于或高于2,000,000的组分的比例等于或大于0.4重量％且小于10重量％。要求（iv）：在通过ODCB的升温洗脱分级中，在等于或低于40℃的温度下洗脱的组分等于或小于3.0重量％。要求（v）：用13 C-NMR测定的全同立构三单元组分数（mm）等于或高于95％。要求（vi）：在拉伸粘度测定中的应变硬化度（λmax）等于或高于6.0。

9. 发明授权

US08611772B2 Recording medium imaging apparatus for determining a type of a recording medium based on a surface image of a reference plate and a surface image of the recording medium 有权
标题翻译：用于基于参考板的表面图像和记录介质的表面图像确定记录介质的类型的记录介质成像设备
公开(公告)号：US08611772B2
公开(公告)日：2013-12-17
申请号：US12896483
申请日：2010-10-01
申请人： Masaru Aoki
发明人： Masaru Aoki
IPC分类号： G03G15/00
CPC分类号： G03B27/54
摘要： A recording medium imaging apparatus includes an irradiation unit configured to irradiate a recording medium with light, an imaging unit configured to capture reflected light which is irradiated by the irradiation unit and reflected by the recording medium as a surface image, and a reference plate which includes a background that reflects light irradiated by the irradiation unit, and a mark that has a different reflectance ratio to the background, wherein the imaging unit captures reflected light reflected by the reference plate as a surface image and includes a control unit that determines a type of the recording medium based on the surface image of the reference plate and the surface image of the recording medium.
摘要翻译：一种记录介质成像装置，包括被配置为用光照射记录介质的照射单元，被配置为捕获由照射单元照射并被记录介质反射的反射光作为表面图像的成像单元，以及包括反映由照射单元照射的光的背景以及与背景具有不同的反射率的标记，其中，所述成像单元将由所述参考板反射的反射光作为表面图像进行拍摄，并且包括控制单元，所述控制单元确定基于参考板的表面图像的记录介质和记录介质的表面图像。

10. 发明申请

US20110142459A1 RECORDING MEDIUM DETERMINATION APPARATUS AND IMAGE FORMING APPARATUS 有权
标题翻译：记录介质测定装置和图像形成装置
公开(公告)号：US20110142459A1
公开(公告)日：2011-06-16
申请号：US12967309
申请日：2010-12-14
申请人： Masaru Aoki
发明人： Masaru Aoki
IPC分类号： G03G15/00
CPC分类号： G03G15/6558 , G01N29/07 , G03G15/6564 , G03G2215/00637 , G03G2215/00721
摘要： The timing of obtaining an output value for use in a determination of a recording medium is generated from a received ultrasonic wave and a waveform generated by delaying the ultrasonic wave, whereby it is possible to reduce an influence of a reflection wave from the peripheral members and an influence of a change in the environment to improve the accuracy of determination of the recoding medium.
摘要翻译：从接收的超声波和通过延迟超声波产生的波形产生获得用于确定记录介质的输出值的定时，从而可以减少来自周边部件的反射波的影响，环境变化的影响，以提高重新编码介质的确定准确性。

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