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    • 8. 发明授权
    • Fluorinated photoresist materials with improved etch resistant properties
    • 具有改善耐蚀性能的氟化光致抗蚀剂材料
    • US07217496B2
    • 2007-05-15
    • US10988137
    • 2004-11-12
    • Mahmoud KhojastehPushkara Rao VaranasiWenjie LiKuang-Jung J ChenKaushal S. Patel
    • Mahmoud KhojastehPushkara Rao VaranasiWenjie LiKuang-Jung J ChenKaushal S. Patel
    • G03C1/73G03F7/038G03F7/039G03F7/20G03F7/30G03F7/36
    • G03F7/0397C08F220/18C08F220/24C08F220/28G03F7/0046G03F7/0382Y10S430/108Y10S430/111Y10S430/122Y10S430/126
    • A photoresist composition including a polymer is disclosed, wherein the polymer includes at least one monomer having the formula: where R1 represents hydrogen (H), a linear, branched or cyclo alkyl group of 1 to 20 carbons, a semi- or perfluorinated linear, branched or cyclo alkyl group of 1 to 20 carbons or CN; R2 represents an alicyclic group of 5 or more carbon atoms; X represents a methylene, ether, ester, amide or carbonate linkage; R3 represents a linear or branched alkylene group or semi- or perfluorinated linear or branched alkylene group with 1 or more carbon atoms; R4 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perflourinated aliphatic group; R5 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group; n represents an integer of 1 or more; and OR12 represents OH or at least one acid labile group selected from a tertiary alkyl carbonate, a tertiary alkyl ester, a tertiary alkyl ether, an acetal and a ketal. A method of patterning a substrate is also disclosed, wherein the method includes: applying the photoresist composition mentioned above to the substrate to form a film; patternwise exposing the film to an imaging radiation source; and developing areas of the film to form a patterned substrate.
    • 公开了包含聚合物的光致抗蚀剂组合物,其中聚合物包括至少一种具有下式的单体:其中R 1表示氢(H),1至20个碳的直链,支链或环烷基 ,碳原子数为1〜20的半全氟化或全氟化的支链或环状烷基,CN; R 2表示5个以上碳原子的脂环基; X表示亚甲基,醚,酯,酰胺或碳酸酯键; R 3表示具有1个或更多个碳原子的直链或支链亚烷基或半或全氟化的直链或支链亚烷基; R 4表示氢(H),甲基(CH 3),三氟甲基(CF 3),二氟甲基(CHF 2) (CH 2 CH 2),或半或全氟化脂族基团; R 5表示三氟甲基(CF 3),二氟甲基(CH 2)2,氟甲基(CH 2 CH 2),氟甲基 或半或全氟取代或未取代的脂族基团; n表示1以上的整数, 和OR 12代表OH或选自叔碳酸烷基酯,叔烷基酯,叔烷基醚,缩醛和缩酮中的至少一种酸不稳定基团。 还公开了一种图案化衬底的方法,其中该方法包括:将上述光致抗蚀剂组合物施加到衬底上以形成膜; 将膜图案化地曝光到成像辐射源; 和显影区域以形成图案化衬底。
    • 10. 发明申请
    • METHOD TO REDUCE MECHANICAL WEAR OF IMMERSION LITHOGRAPHY APPARATUS
    • 降低机械磨损的方法
    • US20080138631A1
    • 2008-06-12
    • US11567394
    • 2006-12-06
    • Kaushal S. PatelDaniel A. Corliss
    • Kaushal S. PatelDaniel A. Corliss
    • B32B9/00
    • C23C30/00G03F7/70341G03F7/70916G03F7/7095
    • A protective coating is provided for components of an immersion lithography tool, in which at least a portion of a component exposed to the immersion fluid is protected by a thin, hard protective coating, comprising materials such as silicon carbide, diamond, diamond-like carbon, boron nitride, boron carbide, tungsten carbide, aluminum oxide, sapphire, titanium nitride, titanium carbonitride, titanium aluminum nitride and titanium carbide. The protective coating may be formed by methods such as CVD, PECVD, APCVD, LPCVD, LECVD, PVD, thin-film evaporation, sputtering, and thermal annealing in the presence of a gas. The protective coating preferably has a hardness greater than a Knoop hardness of about 1000 and more preferably greater than about 2000, or a Moh hardness greater than about 7, more preferably greater than about 9. The protective coating minimizes defects due to mechanical wear of scanner components.
    • 为浸没式光刻工具的组件提供保护涂层,其中暴露于浸没流体的部件的至少一部分被薄的硬质保护涂层保护,其包括诸如碳化硅,金刚石,类金刚石碳 ,氮化硼,碳化硼,碳化钨,氧化铝,蓝宝石,氮化钛,碳氮化钛,氮化铝钛和碳化钛。 可以通过诸如CVD,PECVD,APCVD,LPCVD,LECVD,PVD,薄膜蒸发,溅射和在气体存在下的热退火的方法形成保护涂层。 保护涂层优选具有大于Knoop硬度大约1000,更优选大于约2000的硬度,或大于约7,更优选大于约9的莫氏硬度。保护涂层使由于扫描仪的机械磨损引起的缺陷最小化 组件。