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1. 发明授权

US5723909A Semiconductor device and associated fabrication method 失效
标题翻译：半导体器件及相关制造方法
公开(公告)号：US5723909A
公开(公告)日：1998-03-03
申请号：US712237
申请日：1996-09-11
申请人： Kousaku Yano , Tatsuo Sugiyama , Satoshi Ueda , Noboru Nomura
发明人： Kousaku Yano , Tatsuo Sugiyama , Satoshi Ueda , Noboru Nomura
IPC分类号： H01L21/205 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01L23/58
CPC分类号： H01L23/5329 , H01L21/76801 , H01L21/76826 , H01L21/76832 , H01L21/76834 , H01L2924/0002
摘要： A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer.
摘要翻译：第一金属化层局部地形成在半导体衬底的表面上，从而使半导体衬底表面的部分露出。然后以这样的方式形成第一氧化硅层，使得其覆盖半导体衬底的表面和第一金属化层的暴露部分。随后在第一氧化硅层上形成HMDS分子层。然后，通过使用臭氧与TEOS的化学反应的CVD工艺在分子层上形成第二氧化硅。最后，第二金属化层局部形成在第二氧化硅层上。

2. 发明授权

US5576247A Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture 失效
标题翻译：疏水分子层防止BPSG层吸收水分的薄层形成方法
公开(公告)号：US5576247A
公开(公告)日：1996-11-19
申请号：US97231
申请日：1993-07-27
申请人： Kousaku Yano , Masayuki Endo , Yuka Terai , Noboru Nomura , Tomoyasu Murakami , Tetsuya Ueda , Satoshi Ueda
发明人： Kousaku Yano , Masayuki Endo , Yuka Terai , Noboru Nomura , Tomoyasu Murakami , Tetsuya Ueda , Satoshi Ueda
IPC分类号： H01L21/3105 , H01L21/316
CPC分类号： H01L21/3105 , Y10S438/974
摘要： A BPSG layer serving as a silicon oxide layer is formed on a semiconductor substrate 1. Formed on the surface of the BPSG layer is a hydrophobic molecular layer comprising hydrophobic groups such as methyl, ethyl and the like, by a silylation reaction (in which silyl having hydrophobic groups such as methyl groups, ethyl groups and the like, is reacted with OH groups, and in which the hydrophobic groups are substituted with H of the OH groups to generate --O--Si(CH.sub.3).sub.3 or the like). The molecular layer prevents the BPSG layer from absorbing moisture.
摘要翻译：在半导体衬底1上形成用作氧化硅层的BPSG层。在BPSG层的表面上形成疏水性分子层，其通过甲硅烷基化反应（甲基，具有疏水基团如甲基，乙基等与OH基团反应，并且其中疏水基团被H的OH基团取代以产生-O-Si（CH 3）3等）。分子层防止BPSG层吸湿。

3. 发明授权

US5950101A Method for manufacturing a semiconductor device involving forming two silicon oxide layers by CVD and forming HMDS between the silicon oxide layers 失效
标题翻译：制造半导体器件的方法，包括通过CVD形成两个氧化硅层并在氧化硅层之间形成HMDS
公开(公告)号：US5950101A
公开(公告)日：1999-09-07
申请号：US888919
申请日：1997-07-07
申请人： Kousaka Yano , Tatsuo Sugiyama , Satoshi Ueda , Noboru Nomura
发明人： Kousaka Yano , Tatsuo Sugiyama , Satoshi Ueda , Noboru Nomura
IPC分类号： H01L21/205 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/469
CPC分类号： H01L23/5329 , H01L21/76801 , H01L21/76826 , H01L21/76832 , H01L21/76834 , H01L2924/0002
摘要： A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer.
摘要翻译：第一金属化层局部地形成在半导体衬底的表面上，从而使半导体衬底表面的部分露出。然后以这样的方式形成第一氧化硅层，使得其覆盖半导体衬底的表面和第一金属化层的暴露部分。随后在第一氧化硅层上形成HMDS分子层。然后，通过使用臭氧与TEOS的化学反应的CVD工艺在分子层上形成第二氧化硅。最后，第二金属化层局部形成在第二氧化硅层上。

4. 发明授权

US5986313A Semiconductor device comprising MISFETS and method of manufacturing the same 失效
标题翻译：包括MISFET的半导体器件及其制造方法
公开(公告)号：US5986313A
公开(公告)日：1999-11-16
申请号：US988776
申请日：1997-12-11
申请人： Tetsuya Ueda , Takashi Uehara , Kousaku Yano , Satoshi Ueda
发明人： Tetsuya Ueda , Takashi Uehara , Kousaku Yano , Satoshi Ueda
IPC分类号： H01L21/336 , H01L21/8234 , H01L29/417 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/6659 , H01L21/823475 , H01L29/41775 , H01L29/41783 , H01L29/66545
摘要： There is formed an isolation which surrounds an active region of a semiconductor substrate. Formed over the active region and on the isolation, respectively, are a gate electrode and two gate interconnections on both sides thereof. Between the gate electrode and the gate interconnections are located two first interspaces each of which is smaller in width than a specified value and a second interspace which is larger in width than the specified value and interposed between the two first interspaces. In forming side walls on both side faces of the gate electrode and gate interconnections by depositing an insulating film on the substrate, the first interspaces are buried with the insulating film. Thereafter, a metal film is deposited on the substrate, followed by chemical mechanical polishing till the gate electrode, gate interconnections, and side walls become exposed. By the process, withdrawn electrodes from a source/drain region for ccntact with the active region is formed by self alignment, while the withdrawn electrodes are insulated from the gate electrode and gate interconnections by the side walls.
摘要翻译：形成围绕半导体衬底的有源区的隔离。分别在有源区和隔离层上形成栅电极和两侧栅极互连。在栅极电极和栅极互连之间设置两个第一空间，每个空间的宽度小于指定值，第二空间的宽度大于指定值并插入在两个第一间隙之间。在通过在衬底上沉积绝缘膜来形成栅电极的两个侧面上的侧壁和栅极互连时，第一间隙被绝缘膜掩埋。然后，将金属膜沉积在基板上，然后进行化学机械抛光，直到栅极，栅极互连和侧壁变得暴露。通过该处理，通过自对准来形成用于与有源区域成反射的源极/漏极区域的引出电极，而引出的电极通过侧壁与栅电极和栅极互连绝缘。

5. 发明授权

US5733812A Semiconductor device with a field-effect transistor having a lower resistance impurity diffusion layer, and method of manufacturing the same 失效
标题翻译：具有具有较低电阻杂质扩散层的场效应晶体管的半导体器件及其制造方法
公开(公告)号：US5733812A
公开(公告)日：1998-03-31
申请号：US571131
申请日：1995-12-12
申请人： Tetsuya Ueda , Takashi Uehara , Kousaku Yano , Satoshi Ueda
发明人： Tetsuya Ueda , Takashi Uehara , Kousaku Yano , Satoshi Ueda
IPC分类号： H01L21/336 , H01L21/8234 , H01L29/417 , H01L21/265
CPC分类号： H01L29/6659 , H01L21/823475 , H01L29/41775 , H01L29/41783 , H01L29/66545
摘要： There is formed an isolation which surrounds an active region of a semiconductor substrate. Formed over the active region and on the isolation, respectively, are a gate electrode and two gate interconnections on both sides thereof. Between the gate electrode and the gate interconnections are located two first interspaces each of which is smaller in width than a specified value and a second interspace which is larger in width than the specified value and interposed between the two first interspaces. In forming side walls on both side faces of the gate electrode and gate interconnections by depositing an insulating film on the substrate, the first interspaces are buried with the insulating film. Thereafter, a metal film is deposited on the substrate, followed by chemical mechanical polishing till the gate electrode, gate interconnections, and side walls become exposed. By the process, withdrawn electrodes from a source/drain region for contact with the active region is formed by self alignment, while the withdrawn electrodes are insulated from the gate electrode and gate interconnections by the side walls.
摘要翻译：形成围绕半导体衬底的有源区的隔离。分别在有源区和隔离层上形成栅电极和两侧栅极互连。在栅极电极和栅极互连之间设置两个第一空间，每个空间的宽度小于指定值，第二空间的宽度大于指定值并插入在两个第一间隙之间。在通过在衬底上沉积绝缘膜来形成栅电极的两个侧面上的侧壁和栅极互连时，第一间隙被绝缘膜掩埋。然后，将金属膜沉积在基板上，然后进行化学机械抛光，直到栅极，栅极互连和侧壁变得暴露。通过该处理，通过自对准形成来自用于与有源区接触的源极/漏极区域的引出电极，而引出的电极通过侧壁与栅电极和栅极互连绝缘。

6. 发明授权

US5545919A Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5545919A
公开(公告)日：1996-08-13
申请号：US497756
申请日：1995-07-03
申请人： Satoshi Ueda , Tetsuya Ueda , Atsuhiro Yamano , Kousaku Yano
发明人： Satoshi Ueda , Tetsuya Ueda , Atsuhiro Yamano , Kousaku Yano
IPC分类号： H01L21/31 , H01L21/316 , H01L21/318 , H01L23/31 , H01L23/52 , H01L23/532 , H01L23/58
CPC分类号： H01L23/3171 , H01L23/5329 , H01L2924/0002
摘要： Metal wires are formed side by side over a semiconductor substrate, with an interlayer insulating film interposed between the metal interconnections and the semiconductor substrate. The metal interconnections are covered with a passivation film composed of a lower silicon oxide film and an upper silicon nitride film. The silicon oxide film is deposited so that the maximum thickness of the portions of the silicon oxide film on the side faces of the metal interconnections is less than half of the minimum space between the metal interconnections. The silicon nitride film is deposited so as to be interposed between the portions of the silicon oxide film on the side faces of the adjacent metal interconnections.
摘要翻译：金属线并排地形成在半导体衬底上，层间绝缘膜介于金属互连和半导体衬底之间。金属互连用由下部氧化硅膜和上部氮化硅膜构成的钝化膜覆盖。沉积氧化硅膜，使得金属互连侧面上的氧化硅膜的部分的最大厚度小于金属互连之间的最小空间的一半。沉积氮化硅膜以便在相邻的金属互连的侧面上介于氧化硅膜的部分之间。

7. 发明授权

US10510052B2 Fee collection system by electronic money 有权
公开(公告)号：US10510052B2
公开(公告)日：2019-12-17
申请号：US13884761
申请日：2011-11-15
申请人： Keina Kanisawa , Yusuke Kitakaze , Jiro Hotta , Masahiko Kami , Tadanobu Otaki , Toyofumi Kitano , Kazutaka Kubota , Satoshi Ueda , Hideaki Minoda
发明人： Keina Kanisawa , Yusuke Kitakaze , Jiro Hotta , Masahiko Kami , Tadanobu Otaki , Toyofumi Kitano , Kazutaka Kubota , Satoshi Ueda , Hideaki Minoda
IPC分类号： G06Q20/06 , G06Q20/00 , G06Q30/00
摘要： In a fee collection system a game machine as a charge collective apparatus is provided with a reader terminal for obtaining predetermined identification information from a card, and a reader control unit for outputting to a control board a signal equivalent to an output signal of a coin selector, wherein when a card ID is transmitted from the reader control unit, a management PC refers to charge setting data, determines the consumption amount of electronic money, and requests an account management server to process withdrawal of the consumption amount from an account of electronic money corresponding to the card ID. The management PC notifies the reader control unit the processing result transmitted from the account management server, and outputs to the control board a signal equivalent to the output signal of the coin selector when the withdrawal is successful.

8. 发明授权

US09850088B2 Sheet conveying device, image forming apparatus with sheet conveying device, and method of correcting skew of sheet by using sheet conveying device 有权
公开(公告)号：US09850088B2
公开(公告)日：2017-12-26
申请号：US14953558
申请日：2015-11-30
申请人： Takatsugu Maeda , Toshihiro Nakagaki , Takeshi Uchida , Satoshi Ueda
发明人： Takatsugu Maeda , Toshihiro Nakagaki , Takeshi Uchida , Satoshi Ueda
IPC分类号： B65H9/04 , B65H9/00 , B65H9/14 , B65H5/06
CPC分类号： B65H9/004 , B65H5/062 , B65H5/068 , B65H2404/144 , B65H2404/6111
摘要： A sheet conveying device includes a sheet skew corrector to correct a skew of a leading end of a sheet inclining from a sheet conveyance direction and a pair of registration rollers disposed upstream of the sheet skew corrector in the sheet conveyance direction. The pair of registration rollers freely contacts and separates from each other. The pair of registration rollers conveys the sheet downstream of the sheet skew corrector in the sheet conveyance direction when driven at a prescribed time. A pair of conveyance rollers is placed upstream of the pair of registration rollers in the sheet conveyance direction. The pair of conveyance rollers continuously sandwiches the sheet from when the sheet with the skew corrected is sandwiched by the pair of registration rollers to when a trailing end of the sheet passes between the pair of conveyance rollers.

9. 发明申请

US20140029961A1 IMAGE FORMING APPARATUS 有权
标题翻译：图像形成装置
公开(公告)号：US20140029961A1
公开(公告)日：2014-01-30
申请号：US13951007
申请日：2013-07-25
申请人： Naoto UEDA , Makoto Nakura , Shingo Takai , Satoshi Ueda , Koichi Kudo
发明人： Naoto UEDA , Makoto Nakura , Shingo Takai , Satoshi Ueda , Koichi Kudo
IPC分类号： G03G15/00
CPC分类号： G03G15/0131 , G03G15/0189 , G03G15/6567
摘要： An image forming apparatus includes an image forming unit that forms an image on a recording medium; a width detector that detects positions of side edges of the recording medium in a width direction, which is orthogonal to a conveying direction in which the recording medium is conveyed, at multiple detection positions along the conveying direction; a shape calculator that calculates angles between the conveying direction and straight lines each connecting the positions of the same side edge detected at the multiple detection positions and calculates a shape of the recording medium based on the angles; and a correction unit that corrects image data of the image to be formed by the image forming unit based on the calculated shape of the recording medium.
摘要翻译：图像形成装置包括在记录介质上形成图像的图像形成单元; 宽度检测器，沿着所述传送方向检测与所述记录介质被传送的传送方向正交的宽度方向上的所述记录介质的侧边缘的位置; 计算器，其计算输送方向与连接在多个检测位置检测到的同一侧边缘的位置的直线之间的角度，并基于角度计算记录介质的形状; 以及校正单元，其基于计算出的记录介质的形状校正由图像形成单元形成的图像的图像数据。

10. 发明申请

US20130195482A1 SHEET CONVEYING APPARATUS, IMAGE FORMING APPARATUS, SHEET CONVEYING DISTANCE CALCULATION APPARATUS AND SHEET LENGTH CALCULATION APPARATUS 有权
标题翻译：输送装置，图像形成装置，输送距离计算装置和片材长度计算装置
公开(公告)号：US20130195482A1
公开(公告)日：2013-08-01
申请号：US13559837
申请日：2012-07-27
申请人： Makoto NAKURA , Takuro Kamiya , Shingo Takai , Naoto Ueda , Satoshi Ueda , Akira Kobashi , Koichi Kudo
发明人： Makoto NAKURA , Takuro Kamiya , Shingo Takai , Naoto Ueda , Satoshi Ueda , Akira Kobashi , Koichi Kudo
IPC分类号： G03G15/16 , B65H7/14 , B65H5/06
CPC分类号： G03G15/6529 , B65H5/06 , B65H5/062 , B65H7/06 , B65H7/14 , B65H7/20 , B65H2511/11 , B65H2511/33 , B65H2513/50 , B65H2553/51 , B65H2701/1311 , B65H2701/1313 , G03G15/0189 , G03G15/1615 , G03G15/234 , G03G15/6561 , B65H2220/01 , B65H2220/03 , B65H2220/02
摘要： A sheet conveying apparatus includes a sheet conveying unit that conveys a sheet; a conveying amount measuring unit that measures a conveying amount of the sheet conveyed by the sheet conveying unit; a first detection unit that detects the sheet downstream of the sheet conveying unit in a conveying direction of the sheet; a second detection unit that detects the sheet upstream of the sheet conveying unit in the conveying direction of the sheet; and a conveying distance calculation unit that calculates a conveying distance of the sheet based on the measured result by the conveying amount measuring unit and the detected results detected by the first detection unit and the second detection unit.
摘要翻译：片材输送装置包括输送片材的片材输送单元; 输送量测量单元，其测量由所述纸张输送单元输送的纸张的输送量; 第一检测单元，在片材的输送方向上检测片材输送单元下游的片材; 第二检测单元，在片材的输送方向上检测片材输送单元的上游的片材; 以及输送距离计算单元，其基于由所述输送量测量单元的测量结果和由所述第一检测单元和所述第二检测单元检测到的检测结果来计算所述纸张的输送距离。

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