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1. 发明授权

US06664030B1 System for and method of constructing an alternating phase-shifting mask 有权
标题翻译：构建交替相移掩模的系统和方法
公开(公告)号：US06664030B1
公开(公告)日：2003-12-16
申请号：US09779981
申请日：2001-02-09
申请人： Kouros Ghandehari , Bruno LaFontaine , Bhanwar Singh
发明人： Kouros Ghandehari , Bruno LaFontaine , Bhanwar Singh
IPC分类号： C23C804
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/26 , G03F1/30 , G03F1/32 , G03F1/68
摘要： An exemplary method of constructing an alternating phase-shifting mask is described. This method can include providing a vapor in a vapor chamber containing a mask blank, and applying a laser to selected areas of the mask blank to deposit material on the integrated circuit substrate. The material is configured to cause a 180° phase shift at the wavelengths the mask is designed for such as 248 nm, 193 nm or 157 nm.
摘要翻译：描述构成交替移相掩模的示例性方法。该方法可以包括在包含掩模坯料的蒸气室中提供蒸气，以及将激光施加到掩模坯料的选定区域以将材料沉积在集成电路基板上。该材料被配置为在掩模设计为例如248nm，193nm或157nm的波长处引起180°相移。

2. 发明授权

US06673524B2 Attenuating extreme ultraviolet (EUV) phase-shifting mask fabrication method 有权
标题翻译：衰减极紫外（EUV）移相掩模制造方法
公开(公告)号：US06673524B2
公开(公告)日：2004-01-06
申请号：US09780275
申请日：2001-02-09
申请人： Kouros Ghandehari , Bruno LaFontaine , Bhanwar Singh
发明人： Kouros Ghandehari , Bruno LaFontaine , Bhanwar Singh
IPC分类号： C08J718
CPC分类号： G03F1/32 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/26 , G03F1/30 , G03F1/68
摘要： An exemplary method of forming an attenuating extreme ultraviolet (EUV) phase-shifting mask is described. This method can include providing a multi-layer mirror over an integrated circuit substrate or a mask blank, providing a buffer layer over the multi-layer mirror, providing a dual element material layer over the buffer layer, and selectively growing features on the integrated circuit substrate or mask blank using a photon assisted chemical vapor deposition (CVD) process when depositing the dual element layer.
摘要翻译：描述形成衰减极紫外（EUV）移相掩模的示例性方法。该方法可以包括在集成电路衬底或掩模板上提供多层反射镜，在多层反射镜上提供缓冲层，在缓冲层上提供双重元件材料层，以及在集成电路上选择性地增长特征衬底或掩模坯料，当沉积双重元件层时，使用光子辅助化学气相沉积（CVD）工艺。

3. 发明授权

US06589717B1 Photon assisted deposition of hard mask formation for use in manufacture of both devices and masks 有权
标题翻译：光子辅助沉积硬掩模形成用于制造装置和掩模
公开(公告)号：US06589717B1
公开(公告)日：2003-07-08
申请号：US09715951
申请日：2000-11-17
申请人： Kouros Ghandehari , Bruno LaFontaine , Bhanwar Singh
发明人： Kouros Ghandehari , Bruno LaFontaine , Bhanwar Singh
IPC分类号： C23C804
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/26 , G03F1/30 , G03F1/32 , G03F1/68
摘要： An exemplary method of selectively patterning a hard mask or reticle using a laser to cause deposition of hard mask material in locations forming the hard mask pattern. This method can include providing a vapor in a vapor chamber containing an integrated circuit substrate, and applying a laser to selected areas of the integrated circuit substrate to cause a reaction with the vapor and create a structure on the integrated circuit substrate.
摘要翻译：使用激光对硬掩模或掩模版进行选择性图案化以使硬掩模材料沉积在形成硬掩模图案的位置中的示例性方法。该方法可以包括在包含集成电路基板的蒸气室中提供蒸气，以及将激光施加到集成电路基板的选定区域以引起与蒸汽的反应并在集成电路基板上产生结构。

4. 发明授权

US06403500B1 Cross-shaped resist dispensing system and method 有权
标题翻译：十字形抗蚀剂分配系统及方法
公开(公告)号：US06403500B1
公开(公告)日：2002-06-11
申请号：US09760241
申请日：2001-01-12
申请人： James Jiahua Yu , Kouros Ghandehari , Bhanwar Singh
发明人： James Jiahua Yu , Kouros Ghandehari , Bhanwar Singh
IPC分类号： H01L2131
CPC分类号： H01L21/6715 , G03F7/162
摘要： An exemplary method of depositing photoresist material on an integrated circuit wafer is described. This method can include providing a cross-shaped resist dispenser including a plurality of resist dispense nozzles; dispensing photoresist material through the plurality of resist dispense nozzles to an integrated circuit wafer; and rotating at least one of the cross-shaped resist dispenser and the integrated circuit wafer.
摘要翻译：描述了在集成电路晶片上沉积光致抗蚀剂材料的示例性方法。该方法可以包括提供包括多个抗蚀剂分配喷嘴的十字形抗蚀剂分配器; 将光致抗蚀剂材料通过所述多个抗蚀剂分配喷嘴分配到集成电路晶片; 以及旋转十字形抗蚀剂分配器和集成电路晶片中的至少一个。

5. 发明授权

US06528398B1 Thinning of trench and line or contact spacing by use of dual layer photoresist 有权
标题翻译：通过使用双层光致抗蚀剂来减小沟槽和线或接触间距
公开(公告)号：US06528398B1
公开(公告)日：2003-03-04
申请号：US09775084
申请日：2001-02-01
申请人： Kouros Ghandehari , Bhanwar Singh , Angela T. Hui
发明人： Kouros Ghandehari , Bhanwar Singh , Angela T. Hui
IPC分类号： H01L2176
CPC分类号： G03F7/094 , G03F7/405 , H01L21/0273 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/32139 , H01L21/76224 , H01L21/76816
摘要： An exemplary embodiment described in the disclosure relates to a method of fabricating an integrated circuit which includes providing a bulk layer over a semiconductor substrate, providing an imaging layer over the bulk layer, imaging the imaging layer to expose portions of the imaging layer, removing the exposed portions of the imaging layer, etching the bulk layer at locations where exposed portions of the imaging layer were removed to provide at least one aperture in the bulk layer, and silylating the bulk layer.
摘要翻译：本公开中描述的示例性实施例涉及一种制造集成电路的方法，其包括在半导体衬底上提供体层，在体层上提供成像层，使成像层成像以暴露成像层的部分，去除成像层的暴露部分，在去除成像层的暴露部分的位置处蚀刻体层以在本体层中提供至少一个孔，以及使体层甲硅烷化。

6. 发明授权

US06500587B1 Binary and attenuating phase-shifting masks for multiple wavelengths 有权
标题翻译：用于多个波长的二进制和衰减相移掩模
公开(公告)号：US06500587B1
公开(公告)日：2002-12-31
申请号：US09776242
申请日：2001-02-02
申请人： Kouros Ghandehari , Bhanwar Singh , Carl P. Babcock
发明人： Kouros Ghandehari , Bhanwar Singh , Carl P. Babcock
IPC分类号： G03F900
CPC分类号： G03F1/30 , G03F1/32 , G03F1/54 , G03F1/58
摘要： The disclosure describes an exemplary method of using a dual layer feature on a mask in an integrated circuit fabrication process to provide for use of the mask at multiple wavelengths. This method can include providing a dual layer feature over a mask, where the dual layer feature is configured with layers of selected thicknesses which allow the mask to be used at multiple wavelengths; and subjecting the dual layer feature and the mask to a beam at one of the multiple wavelengths.
摘要翻译：本公开描述了在集成电路制造工艺中在掩模上使用双层特征以提供在多个波长处的掩模的使用的示例性方法。该方法可以包括在掩模上提供双层特征，其中双层特征被配置有允许掩模在多个波长下使用的所选厚度的层; 以及将所述双层特征和所述掩模经受所述多个波长中的一个波长处的波束。

7. 发明授权

US06501555B1 Optical technique to detect etch process termination 有权
标题翻译：检测蚀刻工艺终止的光学技术
公开(公告)号：US06501555B1
公开(公告)日：2002-12-31
申请号：US09773954
申请日：2001-02-01
申请人： Kouros Ghandehari , Bhanwar Singh , Angela T. Hui
发明人： Kouros Ghandehari , Bhanwar Singh , Angela T. Hui
IPC分类号： G01B1128
CPC分类号： H01L22/26 , H01L22/12
摘要： The disclosure describes an exemplary method of detecting a process end point during etching in the fabrication of an integrated circuit. This method can include receiving a reference signal indicative of an intensity of a light source, collecting a reflection signal reflected off a surface of an integrated circuit wafer, and comparing the reference signal and the reflection signal to locate absorption bands, the absorption band being indicative of a process end point.
摘要翻译：本公开描述了在集成电路的制造中在蚀刻期间检测处理终点的示例性方法。该方法可以包括接收指示光源强度的参考信号，收集从集成电路晶片的表面反射的反射信号，以及比较参考信号和反射信号以定位吸收带，吸收带指示的过程终点。

8. 发明授权

US06475867B1 Method of forming integrated circuit features by oxidation of titanium hard mask 失效
标题翻译：通过钛硬掩模氧化形成集成电路特征的方法
公开(公告)号：US06475867B1
公开(公告)日：2002-11-05
申请号：US09824416
申请日：2001-04-02
申请人： Angela T. Hui , Kouros Ghandehari , Bhanwar Singh
发明人： Angela T. Hui , Kouros Ghandehari , Bhanwar Singh
IPC分类号： H07L21336
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338
摘要： An exemplary method of forming integrated circuit device features by oxidization of titanium hard mask is described. This method can include providing a photoresist pattern of photoresist features over a first layer of material deposited over a second layer of material; etching the first layer of material according to the photoresist pattern to form material features; oxidizing exposed portions of the material features where the material features are made of a material which expands during oxidation; and etching the second layer of material according to the material features which have expanded as a result of oxidation. Advantageously, the expansion of the material features results in a smaller distance between material features than the distance between photoresist features.
摘要翻译：描述了通过钛硬掩模的氧化形成集成电路器件特征的示例性方法。该方法可以包括在沉积在第二材料层上的第一材料层上提供光致抗蚀剂特征的光致抗蚀剂图案; 根据光致抗蚀剂图案蚀刻第一层材料以形成材料特征; 氧化材料特征的暴露部分，其中材料特征由在氧化期间膨胀的材料制成; 并根据由于氧化而膨胀的材料特征蚀刻第二层材料。有利地，材料特征的扩展导致材料特征之间的距离比光致抗蚀剂特征之间的距离更小。

9. 发明授权

US07538026B1 Multilayer low reflectivity hard mask and process therefor 有权
标题翻译：多层低反射率硬掩模及其工艺
公开(公告)号：US07538026B1
公开(公告)日：2009-05-26
申请号：US11098262
申请日：2005-04-04
申请人： Kouros Ghandehari , Anna M. Minvielle , Marina V. Plat , Hirokazu Tokuno
发明人： Kouros Ghandehari , Anna M. Minvielle , Marina V. Plat , Hirokazu Tokuno
IPC分类号： H01L21/4763
CPC分类号： H01L21/32139 , H01L21/0276
摘要： A method utilizing a multilayer anti-reflective coating layer structure can achieve low reflectivity at high numerical apertures. The multilayer anti-reflective coating structure can be utilized as a hard mask forming various integrated circuit structures. A multilayer anti-reflective coating structure can be utilized to form gate stacks comprised of polysilicon and a dielectric layer. A photoresist is applied above the multilayer anti-reflective coating which can include silicon oxynitride (SiON) and silicon rich nitride (SiRN).
摘要翻译：利用多层抗反射涂层结构的方法可以在高数值孔径下实现低反射率。多层抗反射涂层结构可以用作形成各种集成电路结构的硬掩模。可以使用多层抗反射涂层结构来形成由多晶硅和电介质层组成的栅叠层。在多层抗反射涂层之上施加光致抗蚀剂，其可以包括氮氧化硅（SiON）和富含硅的氮化物（SiRN）。

10. 发明授权

US07070911B1 Structure and method for reducing standing waves in a photoresist 失效
标题翻译：用于降低光致抗蚀剂中的驻波的结构和方法
公开(公告)号：US07070911B1
公开(公告)日：2006-07-04
申请号：US10350472
申请日：2003-01-23
申请人： Dawn Hopper , Kouros Ghandehari , Minh Van Ngo
发明人： Dawn Hopper , Kouros Ghandehari , Minh Van Ngo
IPC分类号： G03F7/00
CPC分类号： G03F7/091 , Y10S430/151
摘要： A structure and method for reducing standing waves in a photoresist during manufacturing of a semiconductor is presented. Embodiments of the present invention include a method for reducing standing wave formation in a photoresist during manufacturing a semiconductor device comprising depositing a first anti-reflective coating having an extinction coefficient above a material, and depositing a second anti-reflective coating having an extinction coefficient above the first anti-reflective coating, such that the first anti-reflective coating and the second anti-reflective coating reduce the formation of standing waves in a photoresist during a lithography process.
摘要翻译：提出了一种用于在制造半导体期间降低光致抗蚀剂中的驻波的结构和方法。本发明的实施例包括一种在制造半导体器件期间减少光致抗蚀剂中的驻波形成的方法，包括沉积具有高于材料的消光系数的第一抗反射涂层，以及沉积具有高于上述消光系数的第二抗反射涂层第一抗反射涂层，使得第一抗反射涂层和第二抗反射涂层在光刻工艺期间减少光致抗蚀剂中驻波的形成。

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