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1. 发明授权

US06403500B1 Cross-shaped resist dispensing system and method 有权
标题翻译：十字形抗蚀剂分配系统及方法
公开(公告)号：US06403500B1
公开(公告)日：2002-06-11
申请号：US09760241
申请日：2001-01-12
申请人： James Jiahua Yu , Kouros Ghandehari , Bhanwar Singh
发明人： James Jiahua Yu , Kouros Ghandehari , Bhanwar Singh
IPC分类号： H01L2131
CPC分类号： H01L21/6715 , G03F7/162
摘要： An exemplary method of depositing photoresist material on an integrated circuit wafer is described. This method can include providing a cross-shaped resist dispenser including a plurality of resist dispense nozzles; dispensing photoresist material through the plurality of resist dispense nozzles to an integrated circuit wafer; and rotating at least one of the cross-shaped resist dispenser and the integrated circuit wafer.
摘要翻译：描述了在集成电路晶片上沉积光致抗蚀剂材料的示例性方法。该方法可以包括提供包括多个抗蚀剂分配喷嘴的十字形抗蚀剂分配器; 将光致抗蚀剂材料通过所述多个抗蚀剂分配喷嘴分配到集成电路晶片; 以及旋转十字形抗蚀剂分配器和集成电路晶片中的至少一个。

2. 发明授权

US06514874B1 Method of using controlled resist footing on silicon nitride substrate for smaller spacing of integrated circuit device features 失效
标题翻译：在氮化硅衬底上使用受控抗蚀剂基底的方法，用于较小间距的集成电路器件特征
公开(公告)号：US06514874B1
公开(公告)日：2003-02-04
申请号：US09875635
申请日：2001-06-06
申请人： James Jiahua Yu , Bhanwar Singh , Angela T. Hui
发明人： James Jiahua Yu , Bhanwar Singh , Angela T. Hui
IPC分类号： H01L21461
CPC分类号： H01L21/31144
摘要： A method of fabricating an integrated circuit can include providing a layer of silicon nitride over a semiconductor substrate where the layer of silicon nitride has a first thickness selected based on a desired size of extensions; providing a layer of photoresist material over the layer of silicon nitride; patterning the layer of photoresist to form photoresist features being separated at the top of the photoresist features by one minimum lithographic feature and etching a portion of the layer of silicon nitride to form a hole for an integrated circuit device feature. The photoresist features include extensions at the bottom of the photoresist features. The extensions define footings. These footings reduce the separation at the bottom of the photoresist features. As such, exposed portions of the layer of silicon nitride are less than one minimum lithographic feature in width.
摘要翻译：制造集成电路的方法可以包括在半导体衬底上提供氮化硅层，其中氮化硅层具有基于期望的扩展尺寸选择的第一厚度; 在氮化硅层上提供一层光致抗蚀剂材料; 图案化光致抗蚀剂层以形成光致抗蚀剂特征，其通过一个最小光刻特征在光致抗蚀剂特征的顶部分离，并蚀刻氮化硅层的一部分以形成用于集成电路器件特征的孔。光致抗蚀剂特征包括在光刻胶特征底部的延伸部分。扩展名定义了基础。这些底脚减少了光刻胶特征底部的分离。因此，氮化硅层的暴露部分的宽度小于一个最小光刻特征。

3. 发明授权

US06592939B1 System for and method of using developer as a solvent to spread photoresist faster and reduce photoresist consumption 有权
标题翻译：使用显影剂作为溶剂的系统和方法更快地扩散光致抗蚀剂消耗
公开(公告)号：US06592939B1
公开(公告)日：2003-07-15
申请号：US09875596
申请日：2001-06-06
申请人： James Jiahua Yu
发明人： James Jiahua Yu
IPC分类号： B05D312
CPC分类号： H01L21/6715 , G03F7/162
摘要： An exemplary method of using developer as a solvent to spread photoresist faster and reduce photoresist consumption can include dispensing a developer solution onto an integrated circuit wafer, spinning the integrated circuit wafer to distribute the developer solution over the integrated circuit wafer, and dispensing a photoresist solution onto the integrated circuit covered with the developer solution.
摘要翻译：使用显影剂作为溶剂以更快地铺展光致抗蚀剂消耗的示例性方法可以包括将显影剂溶液分配到集成电路晶片上，旋转集成电路晶片以将显影剂溶液分布在集成电路晶片上，并且分配光致抗蚀剂溶液覆盖开发商解决方案的集成电路。

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