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    • 2. 发明授权
    • Positive-working photoresist composition
    • 正光刻胶组合物
    • US06596458B1
    • 2003-07-22
    • US09563436
    • 2000-05-03
    • Kenichiro SatoKunihiko KodamaToshiaki AoaiYasumasa Kawabe
    • Kenichiro SatoKunihiko KodamaToshiaki AoaiYasumasa Kawabe
    • G03F7039
    • G03F7/0397G03F7/0045Y10S430/111
    • Disclosed is a positive-working photoresist composition having reduced development defects, and excellent in resist pattern profiles and in the resolving power of contact holes, which comprises (i) a compound generating an acid by irradiation of active light or radiation, and (ii) a resin containing repeating units of at least one kind selected from the group consisting of (a) repeating units having alkali-soluble groups each protected with at least one group selected from the group consisting of groups containing alicyclic hydrocarbon structures represented by specific general formulas (pI) to (pVI), (b) repeating units represented by specific general formula (II) and (c) repeating units represented by specific general formulas (III-a) to (III-d), and decomposed by the action of an acid to increase the solubility of the resin into an alkali.
    • 公开了具有减少的显影缺陷,抗蚀剂图案轮廓和接触孔分辨能力优异的正性光致抗蚀剂组合物,其包括(i)通过活性光或辐射的照射产生酸的化合物,和(ii) 含有重复单元的树脂,所述重复单元选自(a)具有碱溶性基团的重复单元,各自被至少一个选自由特定通式表示的脂环族烃结构的基团所选择的基团保护的基团 pI)至(pVI),(b)由特定通式(II)表示的重复单元和(c)由特定通式(III-a)至(III-d)表示的重复单元,并通过 酸以增加树脂在碱中的溶解度。
    • 4. 发明授权
    • Positive-working photoresist composition
    • 正光刻胶组合物
    • US5609982A
    • 1997-03-11
    • US357748
    • 1994-12-16
    • Kenichiro SatoYasumasa KawabeToshiaki AoaiShinji Sakaguchi
    • Kenichiro SatoYasumasa KawabeToshiaki AoaiShinji Sakaguchi
    • G03F7/022G03F7/023
    • G03F7/022
    • The present invention provides a positive-working photoresist composition comprising an alkali-soluble resin and a 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic ester of a specific water-insoluble alkali-soluble low molecular compound, wherein the high-performance liquid chromatography of the ester with an ultraviolet ray at 254 nm shows that the patterns corresponding to the diester components and complete ester component of the ester each fall within the specific range and a positive-working photoresist composition comprising a water-insoluble alkali-soluble resin, a water-insoluble alkali-soluble low molecular compound, and an ionization-sensitive radioactive compound which comprises a mixture of a naphthoquinone-diazidesulfonic diester of a water-insoluble alkali-soluble low molecular compound having three phenolic hydroxyl groups as an ionization-sensitive radioactive compound (A) and a naphthoquinonediazidesulfonic diester of a water-insoluble alkali-soluble low molecular compound having four phenolic hydroxyl groups as an ionization-sensitive radioactive compound (B) in an amount of 30% or more by weight based on the total amount of the ionization-sensitive radioactive compound.
    • 本发明提供一种正性光致抗蚀剂组合物,其包含碱溶性树脂和特定的水不溶性碱溶性低分子化合物的1,2-萘醌二叠氮化物-5-(和/或-4-)磺酸酯,其中 使用254nm紫外线的酯的高效液相色谱显示对应于酯的二酯组分和完全酯组分的图案分别落在特定范围内,并且包含非水溶性的正性光致抗蚀剂组合物 碱溶性树脂,水不溶性碱溶性低分子化合物和电离敏感性放射性化合物,其包含具有三个酚羟基的水不溶性碱溶性低分子化合物的萘醌二叠氮烷磺酸二酯的混合物作为 电离敏感的放射性化合物(A)和不溶于水的碱溶性低分子化合物的萘醌二叠氮化物二酯 具有基于电离敏感性放射性化合物的总量为30重量%以上的量的四个酚羟基作为电离敏感性放射性化合物(B)的量。
    • 9. 发明授权
    • Positive photoresist composition
    • 正光致抗蚀剂组合物
    • US5534382A
    • 1996-07-09
    • US411209
    • 1995-03-27
    • Yasumasa KawabeKenichiro Sato
    • Yasumasa KawabeKenichiro Sato
    • G03F7/022H01L21/027G03F7/021G03F7/30
    • G03F7/022
    • Disclosed is a positive photoresist composition comprising an alkali-soluble resin and the 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonate acid ester of a polyhydroxy compound represented by formula (I): ##STR1## wherein R.sub.1 to R.sub.3 may be the same or different and each represents a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group, or an alkoxy group; and m, n and o each represent an integer of from 1 to 3. The photoresist composition has a high resolving power and a less layer thickness reliance of the resolving power, and a wide development latitude, is reluctant to form a development residue, and further has a very excellent storage stability, and does not deposit the photosensitive material and does not form microgels, i.e., shows no increase in the particles, with the passage of time.
    • 公开了一种正型光致抗蚀剂组合物,其包含碱溶性树脂和由式(I)表示的多羟基化合物的1,2-萘醌二叠氮基-5-(和/或-4-)磺酸酯: 其中R 1至R 3可以相同或不同,并且各自表示氢原子,卤素原子,羟基,烷基或烷氧基; m,n和o各自表示1〜3的整数。光致抗蚀剂组合物具有高的分辨能力和更小的层厚依赖分辨能力,并且广泛的开发范围不愿形成显影残渣, 进一步具有非常优异的储存稳定性,并且不沉积感光材料并且不形成微凝胶,即随着时间的推移,不显示颗粒的增加。
    • 10. 发明授权
    • Postive photoresist composition
    • 光刻胶组合物
    • US5529881A
    • 1996-06-25
    • US404985
    • 1995-03-16
    • Yasumasa KawabeKenichiro SatoToshiaki AoaiKazuya Uenishi
    • Yasumasa KawabeKenichiro SatoToshiaki AoaiKazuya Uenishi
    • G03F7/022G03F7/039H01L21/027G03F7/023G03F7/30
    • G03F7/022
    • A positive photoresist composition for super fine working is disclosed, which comprises (a) an alkali-soluble resin and (b) as a photosensitive compound the 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonic acid ester of a polyhydroxy compound represented by formula (I) or (II), wherein in a high-speed liquid chromatography measured using a ultraviolet ray of 254 nm, the pattern of the diester component and the pattern of the complete ester component of said 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonic acid of the polyhydroxy compound shown by formula (I) or (II) are at least 50% and less than 40%, respectively, of the whole pattern areas; ##STR1## wherein R.sub.1 to R.sub.11, which may be the same or different, each represents a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, or a cycloalkyl group, with the proviso that at least one of R.sub.1 to R.sub.11 is a cycloalkyl group, and R.sub.12 to R.sub.22, which may be the same or different, each represents a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, or a cycloalkyl group, with the proviso that at least one of R.sub.12 to R.sub.22 is a cycloalkyl group. The photoresist composition has a high resolving power and a less layer thickness reliance of the resolving power, and a wide development latitude, is reluctant to form a development residue, and further has a very excellent storage stability, and does not deposit the photosensitive material and does not form microgels with the passage of time.
    • 公开了一种用于超细加工的正性光致抗蚀剂组合物,其包含(a)碱溶性树脂和(b)作为光敏化合物的1,2-萘醌二叠氮基-5-(和/或-4-)磺酸酯 由式(I)或(II)表示的多羟基化合物,其中在使用254nm的紫外线测量的高速液相色谱中,所述二酯组分的图案和所述1,2的完全酯组分的图案 式(I)或(II)所示的多羟基化合物的萘醌二叠氮基-5-(和/或-4-)磺酸分别为整个图案区域的至少50%且小于40%; 1, 其可以相同或不同,各自表示氢原子,卤素原子,烷基,烷氧基或环烷基,条件是R 1至R 11中的至少一个为环烷基,R 12至 R 22可以相同或不同,各自表示氢原子,卤素原子,烷基,烷氧基,o 环烷基,条件是R12至R22中的至少一个为环烷基。 光致抗蚀剂组合物具有高的分辨能力和较小的层厚度的分辨能力依赖性,并且广泛的开发范围不愿形成显影残留物,并且还具有非常优异的储存稳定性,并且不沉积感光材料和 随着时间的推移不会形成微凝胶。