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    • 1. 发明授权
    • Superconductive photoelectric switch
    • 超导光电开关
    • US5448098A
    • 1995-09-05
    • US934306
    • 1992-08-25
    • Koji ShinoharaOsamu OhtsukiKazuo MuraseSadao Takaoka
    • Koji ShinoharaOsamu OhtsukiKazuo MuraseSadao Takaoka
    • H01L31/0264H01L39/10H01L39/16H01L39/22H01L27/14
    • H01L39/223H01L39/10H01L39/16Y10S505/848
    • A first type of superconductive photoelectric device is provided by a superconductive thin film located between two electrodes. The superconductive thin film is one which has a photo-conductive effect and converts from a normally conducting state to a superconductive state in response to light irradiation. The superconductive thin film is preferably formed of a compound semiconductor of Pb chalcogenide added with Pb and/or In added beyond the stoicheometry of the compound semiconductor, such as Pb.sub.1-x Sn.sub.x Te+In, so as to generate precipitations of Pb. A second type of superconductive photoelectric device is provided by a photo-conductive material formed of Pb.sub.1-x Sb.sub.x Te filled in a gap between two superconductive electrodes, where the gap width is shorter than 500 times of a coherence length. In either the first-or second type, when an infrared light is irradiated onto the photo-conductive region at a predetermined temperature, the coherence length of the superconductivity is extended so as to convert from a normally conducting state to a superconductive state. When ON/OFF irradiated with a light shorter than 0.8 .mu.m, a material Pb.sub.1-x Sn.sub.x Te without In switches between the normally conducting state and the superconductive state. With In added, the material persistently converts from the normally conducting state to the superconductive state.
    • 第一种超导光电器件由位于两个电极之间的超导薄膜提供。 超导薄膜是具有光导效应并且响应于光照射而从正常导通状态转换为超导状态的薄膜。 超导薄膜优选由添加Pb和/或Pb的化合物半导体形成,该化合物半导体添加超过化合物半导体例如Pb1-xSnxTe + In的放射照相法,以产生Pb的沉淀。 第二种超导光电器件由填充在两个超导电极之间的间隙中的Pb1-xSbxTe形成的光导材料提供,其中间隙宽度短于相干长度的500倍。 在第一或第二类型中,当在预定温度下将红外光照射到光电导区上时,超导性的相干长度被延长以便从正常导通状态转换为超导状态。 当用小于0.8μm的光照射ON / OFF时,不具有In的材料Pb1-xSnxTe在正常导通状态和超导状态之间切换。 随着In的添加,材料持续地从正常导通状态转换为超导状态。