专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20160286147A1 CHARGE-COUPLED DEVICE, MANUFACTURING METHOD THEREOF, AND SOLID-STATE IMAGING ELEMENT 有权
标题翻译：充电耦合器件，其制造方法和固态成像元件
公开(公告)号：US20160286147A1
公开(公告)日：2016-09-29
申请号：US15033408
申请日：2014-10-31
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Shin-ichiro TAKAGI , Yasuhito YONETA , Hisanori SUZUKI , Masaharu MURAMATSU
IPC分类号： H04N5/378 , H01L27/146 , H04N5/225 , H01L27/148
CPC分类号： H04N5/378 , H01L27/14685 , H01L27/14812 , H01L27/14825 , H01L27/14837 , H04N5/2253
摘要： Each pixel region PX includes a photoelectric conversion region S1, a resistive gate electrode R, a first transfer electrode T1, a second transfer electrode T2, a barrier region B positioned directly beneath the first transfer electrode T1 in a semiconductor substrate 10, and a charge accumulation region S2 positioned directly beneath the second transfer electrode T2 in the semiconductor substrate 10. An impurity concentration of the barrier region B is lower than an impurity concentration of the charge accumulation region S2, and the first transfer electrode T1 and the second transfer electrode T2 are electrically connected to each other.
摘要翻译：每个像素区域PX包括光电转换区域S1，电阻栅电极R，第一转移电极T1，第二转移电极T2，位于半导体衬底10中的第一转移电极T1正下方的势垒区域B，以及电荷存储区域S2位于半导体衬底10中的第二传输电极T2正下方。势垒区域B的杂质浓度低于电荷累积区域S2的杂质浓度，第一传输电极T1和第二传输电极T2 彼此电连接。

2. 发明申请

US20160268334A1 LINEAR IMAGE SENSOR 审中-公开
标题翻译：线性图像传感器
公开(公告)号：US20160268334A1
公开(公告)日：2016-09-15
申请号：US15032130
申请日：2014-10-31
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Shin-ichiro TAKAGI , Yasuhito YONETA , Hisanori SUZUKI , Masaharu MURAMATSU
IPC分类号： H01L27/148
CPC分类号： H01L27/14825 , H01L27/14812 , H01L27/14843 , H04N5/3692 , H04N5/37213
摘要： An optical detection unit AR is divided so as to have a plurality of pixel regions PX aligned in a column direction. Signals from the plurality of pixel regions PX are integrated for each optical detection unit AR, and output the signal as an electrical signal corresponding to a one-dimensional optical image in time series. Each of the pixel regions PX includes a resistive gate electrode R which promotes transfer of charges in the photoelectric conversion region and a charge accumulation region S2. A drain region ARD is adjacent to the charge accumulation region S2 through a channel region.
摘要翻译：光学检测单元AR被分割成具有在列方向上对齐的多个像素区域PX。针对每个光学检测单元AR集成来自多个像素区域PX的信号，并且以时间序列将该信号作为与一维光学图像对应的电信号输出。每个像素区域PX包括促进光电转换区域中的电荷转移的电阻栅电极R和电荷累积区域S2。漏极区域ARD通过沟道区域与电荷累积区域S2相邻。

3. 发明授权

US09093353B2 Matrix image sensor providing bidirectional charge transfer with asymmetric gates 有权
标题翻译：矩阵图像传感器提供双向电荷转移与非对称门
公开(公告)号：US09093353B2
公开(公告)日：2015-07-28
申请号：US14397725
申请日：2013-04-11
申请人： E2V SEMICONDUCTORS
发明人： Frédéric Mayer
IPC分类号： H01L27/148 , H01L27/146 , H01L27/105 , H01L29/765
CPC分类号： H01L27/14812 , H01L27/1057 , H01L27/14627 , H01L27/14825 , H01L27/14856 , H01L27/14868 , H01L29/765
摘要： In the field of image sensors, more particularly time-delay integration linear sensors or TDI sensors, a sensor comprises rows of photodiodes alternating with rows of gates adjacent to the photodiodes. The gates are asymmetric, adjacent on one side to a photodiode and having, on the other side, narrow gate fingers extending toward another photodiode. Owing to their very narrow width, the fingers endow the transfer of charges with a directionality. Between two successive photodiodes there are two gates, the two being adjacent to the two photodiodes, the first having its narrow fingers turned toward the first photodiode, the second having its narrow fingers turned toward the second photodiode. The direction of transfer of the charges in the sensor may be chosen by neutralizing either the first gate or the second gate, the other gate receiving alternating potentials allowing the transfer of charges from one photodiode to the other.
摘要翻译：在图像传感器领域中，更具体地，延时积分线性传感器或TDI传感器，传感器包括与邻近光电二极管的栅极行交替的一行光电二极管。栅极是不对称的，在一侧相对于光电二极管，另一侧具有朝向另一个光电二极管延伸的窄栅极指。由于它们的宽度非常窄，手指赋予了方向性的电荷转移。在两个连续的光电二极管之间有两个栅极，两个栅极与两个光电二极管相邻，第一栅极具有朝向第一光电二极管的窄指状物，第二栅极具有朝向第二光电二极管的窄指状物。可以通过中和第一栅极或第二栅极来选择传感器中的电荷的传输方向，另一个栅极接收允许将电荷从一个光电二极管传递到另一个的交替电位。

4. 发明申请

US20140124649A1 OFF-AXIAL THREE-MIRROR SYSTEM 有权
标题翻译：离轴三镜系统
公开(公告)号：US20140124649A1
公开(公告)日：2014-05-08
申请号：US13712961
申请日：2012-12-12
申请人： WEI HOU , JUN ZHU , GUO-FAN JIN , SHOU-SHAN FAN
发明人： WEI HOU , JUN ZHU , GUO-FAN JIN , SHOU-SHAN FAN
IPC分类号： G02B17/06 , H01L27/148
CPC分类号： H01L27/14825 , G02B17/0621 , G02B17/0642
摘要： An off-axial three-mirror system includes a primary mirror, a secondary mirror, a tertiary mirror, and an image sensor. The secondary mirror is located on a reflective optical path of the primary mirror. The tertiary mirror is located on a reflective optical path of the secondary mirror. The image sensor is located on a reflecting optical path of the tertiary mirror. The primary mirror and the tertiary mirror are formed as one piece. The surface type of both the primary mirror and the tertiary mirror is a freeform surface. The primary mirror is a convex mirror, and the tertiary mirror is a concave mirror.
摘要翻译：离轴三镜系统包括主镜，副镜，第三镜和图像传感器。副镜位于主镜的反射光路上。第三级反射镜位于次级反射镜的反射光路上。图像传感器位于第三反射镜的反射光路上。主镜和第三镜形成为一体。主镜和三次镜的表面类型都是自由曲面。主镜是凸面镜，第三镜是凹面镜。

5. 发明申请

US20130285188A1 SOLID STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20130285188A1
公开(公告)日：2013-10-31
申请号：US13977976
申请日：2011-11-11
申请人： Tomohiro Ikeya , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
发明人： Tomohiro Ikeya , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
IPC分类号： H01L31/02
CPC分类号： H01L31/02 , H01L27/14806 , H01L27/14825 , H01L27/14831 , H01L27/14887
摘要： A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having photosensitive regions 13, and a potential gradient forming portion 3 arranged opposite to the photosensitive regions 13. A planar shape of each photosensitive region 13 is a substantially rectangular shape composed of two long sides and two short sides. The photosensitive regions 13 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 has a first potential gradient forming region to form a potential gradient becoming lower along a second direction from one of the short sides to the other of the short sides, and a second potential gradient forming region to form a potential gradient becoming higher along the second direction. The second potential gradient forming region is arranged next to the first potential gradient forming region in the second direction.
摘要翻译：固态成像装置1设置有具有感光区域13的光电转换部分2和与感光区域13相对设置的电位梯度形成部分3.每个光敏区域13的平面形状是由两个长边和两边。感光区域13在与长边相交的第一方向上并列。电位梯度形成部分3具有第一电位梯度形成区域，以形成沿着从短边中的一个短边到另一个的第二方向变低的电位梯度，以及第二电位梯度形成区域，以形成电位梯度沿着第二个方向变得更高。第二电位梯度形成区域沿着第二方向布置在第一电位梯度形成区域的旁边。

6. 发明授权

US08415604B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08415604B2
公开(公告)日：2013-04-09
申请号：US12933992
申请日：2009-03-24
申请人： Hisanori Suzuki , Yasuhito Yoneta , Shinya Otsuka , Masaharu Muramatsu
发明人： Hisanori Suzuki , Yasuhito Yoneta , Shinya Otsuka , Masaharu Muramatsu
IPC分类号： H01L27/148
CPC分类号： H04N5/3692 , G01J3/2803 , H01L27/14825 , H04N5/3535
摘要： A solid-state imaging device 1 is provided with a plurality of photoelectric converting portions 3, a plurality of first transferring portions 5, a plurality of charge accumulating portions 7, a plurality of second transferring portions 9, and a shift register 11. Each photoelectric converting portion 3 has a photosensitive region 13 which has a planar shape of a nearly rectangular shape composed of two long sides and two short sides, and a potential gradient forming region 15 which forms a potential gradient increasing along a first direction directed from one short side to the other short side forming the planar shape of the photosensitive region 13. Bach first transferring portion 5 is arranged on the side of the other short side forming the planar shape of the corresponding photosensitive region 13 and transfers a charge acquired from the corresponding photosensitive region 13, in the first direction. Each charge accumulating portion 7 accumulates a charge transferred from the corresponding first transferring portion 5. This achieves the solid-state imaging device capable of quickly reading out the charge generated in the photosensitive region, without complicating image processing.
摘要翻译：固态成像装置1具有多个光电转换部3，多个第一转印部5，多个电荷蓄积部7，多个第二转印部9和移位寄存器11.各光电转换部分3具有由两个长边和两个短边组成的具有近似矩形形状的平面形状的光敏区域13和形成沿着从一个短边指向的第一方向增加的电位梯度的电位梯度形成区域15 到形成感光区域13的平面形状的另一个短边.Bach第一转印部分5布置在另一短边的形成相应光敏区域13的平面形状的一侧，并转移从相应感光区域获得的电荷 13，在第一个方向。每个电荷累积部分7累积从相应的第一传送部分5转移的电荷。这实现了能够快速读出在感光区域中产生的电荷而不使图像处理复杂化的固态成像装置。

7. 发明申请

US20110024607A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20110024607A1
公开(公告)日：2011-02-03
申请号：US12933992
申请日：2009-03-24
申请人： Hisanori Suzuki , Yasuhito Yoneta , Shinya Otsuka , Masaharu Muramatsu
发明人： Hisanori Suzuki , Yasuhito Yoneta , Shinya Otsuka , Masaharu Muramatsu
IPC分类号： H01L27/148
CPC分类号： H04N5/3692 , G01J3/2803 , H01L27/14825 , H04N5/3535
摘要： A solid-state imaging device 1 is provided with a plurality of photoelectric converting portions 3, a plurality of first transferring portions 5, a plurality of charge accumulating portions 7, a plurality of second transferring portions 9, and a shift register 11. Each photoelectric converting portion 3 has a photosensitive region 13 which has a planar shape of a nearly rectangular shape composed of two long sides and two short sides, and a potential gradient forming region 15 which forms a potential gradient increasing along a first direction directed from one short side to the other short side forming the planar shape of the photosensitive region 13. Bach first transferring portion 5 is arranged on the side of the other short side forming the planar shape of the corresponding photosensitive region 13 and transfers a charge acquired from the corresponding photosensitive region 13, in the first direction. Each charge accumulating portion 7 accumulates a charge transferred from the corresponding first transferring portion 5. This achieves the solid-state imaging device capable of quickly reading out the charge generated in the photosensitive region, without complicating image processing.
摘要翻译：固态成像装置1具有多个光电转换部3，多个第一转印部5，多个电荷蓄积部7，多个第二转印部9和移位寄存器11.各光电转换部分3具有由两个长边和两个短边组成的具有近似矩形形状的平面形状的光敏区域13和形成沿着从一个短边指向的第一方向增加的电位梯度的电位梯度形成区域15 到形成感光区域13的平面形状的另一个短边.Bach第一转印部分5布置在另一短边的形成相应光敏区域13的平面形状的一侧，并转移从相应感光区域获得的电荷 13，在第一个方向。每个电荷累积部分7累积从相应的第一传送部分5转移的电荷。这实现了能够快速读出在感光区域中产生的电荷而不使图像处理复杂化的固态成像装置。

8. 发明申请

US20100321552A1 IMAGE SENSOR AND IMAGE-READING DEVICE 有权
标题翻译：图像传感器和图像读取装置
公开(公告)号：US20100321552A1
公开(公告)日：2010-12-23
申请号：US12610620
申请日：2009-11-02
申请人： Jiro MATSUDA
发明人： Jiro MATSUDA
IPC分类号： H04N5/335
CPC分类号： H01L27/14825 , H01L27/14812
摘要： An image sensor includes: a charge generating unit that generates a charge in response to light, and has a potential well that stores the charge; a first charge storage unit the first charge storage unit having a potential well deeper than the potential well of the charge generating unit and storing a charge transferred from the charge generating unit; a first electrode covering an end of the charge generating unit, to which a voltage is applied, to form a gradient of a potential so that a charge stored in the charge generating unit is transferred to the first charge storage unit; and a second electrode covering a part of the charge generating unit, to which a voltage is applied to make a part of the potential well of the charge generating unit shallow, the shallow part corresponding to the part of the charge generating unit covered by the second electrode.
摘要翻译：图像传感器包括：电荷产生单元，其响应于光而产生电荷，并且具有存储电荷的势阱; 第一电荷存储单元，所述第一电荷存储单元具有比所述电荷产生单元的势阱更深的电位并存储从所述电荷产生单元传送的电荷; 覆盖电荷产生单元的端部的第一电极，施加电压以形成电位梯度，使得存储在电荷产生单元中的电荷被转移到第一电荷存储单元; 以及覆盖所述电荷产生单元的一部分的第二电极，施加电压以使所述电荷产生单元的所述势阱的一部分较浅的所述浅电极对应于由所述电荷产生单元覆盖的所述电荷产生单元的部分电极。

9. 发明申请

US20070131974A1 Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US20070131974A1
公开(公告)日：2007-06-14
申请号：US11600058
申请日：2006-11-16
申请人： Makoto Tanaka
发明人： Makoto Tanaka
IPC分类号： H01L29/768
CPC分类号： H01L27/14825 , H01L27/14812 , H01L29/76816 , H01L29/76875
摘要： A solid-state imaging device includes a transfer element line for transferring an electric charge that is photoelectrically converted in a photoelectric conversion element line formed of a plurality of photoelectric conversion elements, and a charge detector for detecting an electric charge that is transferred by the transfer element line. The charge detector includes output gates disposed adjacently to a final transfer gate of the transfer element line, a reset gate for resetting an electric charge in the charge detector, a floating diffusion formed on a substrate surface adjacently to the output gates and the reset gate, and addition gates formed above the floating diffusion and along the direction from the output gates to the reset gate.
摘要翻译：固态成像装置包括用于转移由多个光电转换元件形成的光电转换元件线中被光电转换的电荷的转移元件线，以及用于检测通过转印传送的电荷的电荷检测器元素线。电荷检测器包括与传输元件线的最终传输栅极相邻设置的输出栅极，用于复位电荷检测器中的电荷的复位栅极，形成在与输出栅极和复位栅极相邻的衬底表面上的浮动扩散，以及形成在浮动扩散部上方并且沿着从输出门到复位栅极的方向的相加门。

10. 发明申请

US20070045669A1 Image sensor 审中-公开
标题翻译：图像传感器
公开(公告)号：US20070045669A1
公开(公告)日：2007-03-01
申请号：US11488137
申请日：2006-07-18
申请人： Shiro Tsunai
发明人： Shiro Tsunai
IPC分类号： H01L27/148
CPC分类号： H01L27/14806 , H01L27/14812 , H01L27/14825
摘要： An image sensor according to an embodiment of the invention includes: a plurality of pixels arranged in line; a reading gate adjacent to the plurality of pixels; a plurality of memory gates formed adjacent to the reading gate and corresponding to the plurality of pixels; a plurality of memory control gates corresponding to the memory gates; and a CCD accumulation gate common to the plurality of memory control gates.
摘要翻译：根据本发明的实施例的图像传感器包括：排列成行的多个像素; 与所述多个像素相邻的读取门; 与所述读取门相邻并对应于所述多个像素形成的多个存储栅; 对应于存储器门的多个存储器控制门; 以及多个存储器控制门公共的CCD累积栅极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式