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1. 发明授权

US09251898B2 Method for programming nonvolatile memory element, method for initializing nonvolatile memory element, and nonvolatile memory device 有权
标题翻译：非易失性存储元件的编程方法，非易失性存储元件的初始化方法以及非易失性存储器件
公开(公告)号：US09251898B2
公开(公告)日：2016-02-02
申请号：US13983855
申请日：2012-02-07
申请人： Koji Katayama , Takeshi Takagi
发明人： Koji Katayama , Takeshi Takagi
IPC分类号： G11C13/00 , H01L27/10 , H01L27/102 , H01L49/02 , H01L45/00 , H01L27/24 , G11C29/50
CPC分类号： G11C13/0069 , G11C13/0007 , G11C13/004 , G11C29/50008 , G11C2013/0045 , G11C2013/0083 , G11C2213/72 , H01L27/101 , H01L27/1021 , H01L27/2409 , H01L27/2418 , H01L28/20 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： A method for programming a nonvolatile memory element includes: decreasing a resistance value of a variable resistance element in an initial state, by applying an initialization voltage pulse to a series circuit in which a load resistor having a first resistance value is connected in series with the variable resistance element and a MSM diode; applying, after the decreasing, a write voltage pulse to the series circuit after the resistance value of the variable resistance element is changed to a second resistance value lower than the first resistance value; and applying, after the decreasing, an erase voltage pulse to the series circuit after the resistance value of the variable resistance element is changed to a third resistance value lower than the first resistance value.
摘要翻译：一种用于非易失性存储元件的编程方法包括：通过向串联电路施加初始化电压脉冲来降低初始状态下的可变电阻元件的电阻值，其中具有第一电阻值的负载电阻器与可变电阻元件和MSM二极管; 在可变电阻元件的电阻值变为低于第一电阻值的第二电阻值之后，在减小之后向串联电路施加写入电压脉冲; 以及在所述可变电阻元件的电阻值变为低于所述第一电阻值的第三电阻值之后，在所述减小之后向所述串联电路施加擦除电压脉冲。

2. 发明授权

US08594145B2 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 有权
标题翻译： III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
公开(公告)号：US08594145B2
公开(公告)日：2013-11-26
申请号：US12837291
申请日：2010-07-15
申请人： Shimpei Takagi , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
发明人： Shimpei Takagi , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
IPC分类号： H01S5/00
CPC分类号： H01S5/1085 , B82Y20/00 , H01L33/0045 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/0208 , H01S5/2201 , H01S5/3202 , H01S5/3404 , H01S5/34333
摘要： A III-nitride semiconductor laser device includes a laser structure including a support base, a semiconductor region, and an electrode. The support base includes a hexagonal III-nitride semiconductor and a semipolar primary surface. The semiconductor region includes first and second cladding layers and an active layer arranged along an axis normal to the semipolar primary surface. A c-axis of the hexagonal III-nitride semiconductor is inclined at an angle ALPHA with respect to the normal axis toward an m-axis of the hexagonal III-nitride semiconductor. The laser structure includes first and second fractured faces that intersect with an m-n plane defined by the normal axis and the m-axis of the hexagonal III-nitride semiconductor. A laser cavity of the laser device includes the first and second fractured faces. Each of the first and second fractured faces have a stripe structure on an end face of the support base.
摘要翻译： III族氮化物半导体激光器件包括具有支撑基底，半导体区域和电极的激光器结构。支撑基底包括六边形III族氮化物半导体和半极性主表面。半导体区域包括第一和第二覆层以及沿着垂直于半极性主表面的轴布置的有源层。六边形III族氮化物半导体的c轴相对于法线轴线朝向六边形III族氮化物半导体的m轴倾斜角度ALPHA。激光器结构包括第一和第二断裂面，其与由六角形III族氮化物半导体的法线轴和m轴限定的m-n平面交叉。激光装置的激光腔包括第一和第二断裂面。第一和第二断裂面中的每一个在支撑基座的端面上具有条纹结构。

3. 发明授权

US08553444B2 Variable resistance nonvolatile storage device and method of forming memory cell 有权
标题翻译：可变电阻非易失性存储器件和形成存储单元的方法
公开(公告)号：US08553444B2
公开(公告)日：2013-10-08
申请号：US12743472
申请日：2009-08-20
申请人： Shunsaku Muraoka , Yoshihiko Kanzawa , Satoru Mitani , Koji Katayama , Kazuhiko Shimakawa , Satoru Fujii , Takeshi Takagi
发明人： Shunsaku Muraoka , Yoshihiko Kanzawa , Satoru Mitani , Koji Katayama , Kazuhiko Shimakawa , Satoru Fujii , Takeshi Takagi
IPC分类号： G11C11/00
CPC分类号： H01L45/147 , G11C13/0007 , G11C13/0069 , G11C2013/009 , G11C2213/15 , G11C2213/32 , G11C2213/34 , G11C2213/79 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675
摘要： A variable resistance nonvolatile storage device which includes (i) a semiconductor substrate (301), (ii) a variable resistance element (309) having: lower and upper electrodes (309a, 309c); and a variable resistance layer (309b) whose resistance value reversibly varies based on voltage signals each of which has a different polarity and is applied between the electrodes (309a, 309c), and (iii) a MOS transistor (317) formed on the substrate (301), wherein the variable resistance layer (309b) includes: oxygen-deficient transition metal oxide layers (309b-1, 309b-2) having compositions MOX and MOy (where x
摘要翻译：一种可变电阻非易失性存储装置，包括：（i）半导体衬底（301），（ii）具有下电极和上电极（309a，309c）的可变电阻元件（309）和可变电阻层（309b），其电阻值基于各自具有不同极性的电压信号而被可逆地变化并施加在电极（309a，309c）之间，以及（iii）形成在基板上的MOS晶体管（301），其中所述可变电阻层（309b）包括：具有组成MOX和MOy（其中x

4. 发明授权

US08524173B2 Microchannel structure and fine-particle production method using the same 有权
标题翻译：微通道结构和微粒生产方法使用相同
公开(公告)号：US08524173B2
公开(公告)日：2013-09-03
申请号：US11847788
申请日：2007-08-30
申请人： Maho Yamanaka , Akira Kawai , Koji Katayama , Hiroki Takamiya
发明人： Maho Yamanaka , Akira Kawai , Koji Katayama , Hiroki Takamiya
IPC分类号： B01F3/08
CPC分类号： B01F3/0807 , B01F5/0475 , B01F5/0478 , B01F13/0059 , B01F13/1013 , B01F13/1022 , B01J19/0093 , B01J2219/00783 , B01J2219/00822 , B01J2219/00824 , B01J2219/00826 , B01J2219/00828 , B01J2219/00831 , B01J2219/00833 , B01J2219/0086 , B01J2219/00889 , B01J2219/00891 , B01J2219/00903 , Y10T137/0396
摘要： A microchannel structure including a dispersed-phase introduction channel which communicates with a dispersed-phase introduction inlet; a continuous-phase introduction channel which communicates with a continuous-phase introduction inlet; a discharge channel which communicates with a discharge outlet; a fine-particle formation channel; and a plurality of branch channels for dispersed-phase introduction which are microchannels; wherein one end of the fine-particle formation channel in a fluid traveling direction communicates with the continuous-phase introduction channel whereas the other end thereof communicates with the discharge channel; and wherein a side part of the dispersed-phase introduction channel and side part of the fine-particle formation channel communicate via the plurality of branch channel for dispersed-phase introduction.
摘要翻译：一种微通道结构，包括与分散相引入口连通的分散相导入通道; 与连续相导入口连通的连续相导入流路; 排出通道，其与排出口连通; 细颗粒形成通道; 以及用于分散相导入的多个分支通道，它们是微通道; 其特征在于，所述细粒形成流路的流体行进方向的一端与所述连续相导入流路连通，而所述微粒形成流路的另一端与所述排出流路连通。并且其中分散相导入通道的侧部和细颗粒形成通道的侧部通过多个用于分散相引入的分支通道连通。

5. 发明授权

US08445885B2 Nonvolatile memory element having a thin platinum containing electrode 有权
标题翻译：具有薄铂电极的非易失性存储元件
公开(公告)号：US08445885B2
公开(公告)日：2013-05-21
申请号：US13132058
申请日：2009-12-01
申请人： Yoshihiko Kanzawa , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi , Koji Katayama
发明人： Yoshihiko Kanzawa , Satoru Mitani , Zhiqiang Wei , Takeshi Takagi , Koji Katayama
IPC分类号： H01L29/02
CPC分类号： H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element includes first and second electrodes, and a resistance variable layer disposed therebetween. At least one of the first and second electrodes includes a platinum-containing layer. The resistance variable layer includes a first oxygen-deficient transition metal oxide layer which is not physically in contact with the platinum-containing layer and a second oxygen-deficient transition metal oxide layer which is disposed between the first oxygen-deficient transition metal oxide layer and the platinum-containing layer and is physically in contact with the platinum-containing layer. When oxygen-deficient transition metal oxides included in the first and second oxygen-deficient transition metal oxide layers are expressed as MOx, and MOy, respectively, x
摘要翻译：非易失性存储元件包括第一和第二电极以及设置在它们之间的电阻变化层。第一和第二电极中的至少一个包括含铂层。电阻变化层包括不与含铂层物理接触的第一缺氧过渡金属氧化物层和设置在第一缺氧过渡金属氧化物层和第二缺氧过渡金属氧化物层之间的第二缺氧过渡金属氧化物层所述含铂层并且与所述含铂层物理接触。包含在第一和第二缺氧过渡金属氧化物层中的缺氧过渡金属氧化物分别表示为MOx，MOy分别表示为x

6. 发明授权

US08389312B2 Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device 失效
标题翻译： III族氮化物半导体激光器件及III族氮化物半导体激光器件的制造方法
公开(公告)号：US08389312B2
公开(公告)日：2013-03-05
申请号：US13367846
申请日：2012-02-07
申请人： Yusuke Yoshizumi , Shimpei Takagi , Takatoshi Ikegami , Masaki Ueno , Koji Katayama
发明人： Yusuke Yoshizumi , Shimpei Takagi , Takatoshi Ikegami , Masaki Ueno , Koji Katayama
IPC分类号： H01L21/00
CPC分类号： H01S5/3202 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/0425 , H01S5/1085 , H01S5/16 , H01S5/22 , H01S2301/14
摘要： A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.
摘要翻译：制备III族氮化物半导体激光器件的方法包括：制备六方晶III族氮化物半导体的衬底，其中衬底具有半极性主表面; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括所述基板和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在六方晶III族氮化物半导体的a轴的方向上划分基板产品的第一表面; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

7. 发明授权

US08213475B2 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 失效
标题翻译： III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
公开(公告)号：US08213475B2
公开(公告)日：2012-07-03
申请号：US13209101
申请日：2011-08-12
申请人： Shimpei Takagi , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
发明人： Shimpei Takagi , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
IPC分类号： H01S5/323 , H01L29/06 , H01L29/12
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01S5/0014 , H01S5/0202 , H01S5/1082 , H01S5/3202 , H01S5/3211
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure 13, a first surface 13a is a surface opposite to a second surface 13b and first and second fractured faces 27, 29 extend each from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. A scribed mark SM1 extending from the edge 13c to the edge 13d is made, for example, at one end of the first fractured face 27, and the scribed mark SM1 or the like has a depressed shape extending from the edge 13c to the edge 13d. The fractured faces 27, 29 are not formed by dry etching and thus are different from the conventional cleaved facets such as c-planes, m-planes, or a-planes. It is feasible to use emission of a band transition enabling a low threshold current.
摘要翻译：本发明提供一种III族氮化物半导体激光器件，其具有激光腔，能够在支撑基座的半极性表面上具有低阈值电流，六边形III族氮化物的c轴朝向m轴倾斜。在激光结构13中，第一表面13a是与第二表面13b相对的表面，第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。从边缘13c延伸到边缘13d的划线标记SM1例如在第一断裂面27的一端形成，划线标记SM1等具有从边缘13c延伸到边缘13d的凹陷形状。断裂面27,29不是通过干蚀刻形成的，因此与常规的切割面不同，例如c面，m面或者a平面。使用能够实现低阈值电流的频带转换的发射是可行的。

8. 发明授权

US08071405B2 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 失效
标题翻译： III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
公开(公告)号：US08071405B2
公开(公告)日：2011-12-06
申请号：US12836281
申请日：2010-07-14
申请人： Shimpei Takagi , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
发明人： Shimpei Takagi , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01S5/0014 , H01S5/0202 , H01S5/1082 , H01S5/3202 , H01S5/3211
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure 13, a first surface 13a is a surface opposite to a second surface 13b and first and second fractured faces 27, 29 extend each from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. A scribed mark SM1 extending from the edge 13c to the edge 13d is made, for example, at one end of the first fractured face 27, and the scribed mark SM1 or the like has a depressed shape extending from the edge 13c to the edge 13d. The fractured faces 27, 29 are not formed by dry etching and thus are different from the conventional cleaved facets such as c-planes, m-planes, or a-planes. It is feasible to use emission of a band transition enabling a low threshold current.
摘要翻译：本发明提供一种III族氮化物半导体激光器件，其具有激光腔，能够在支撑基座的半极性表面上具有低阈值电流，六边形III族氮化物的c轴朝向m轴倾斜。在激光结构13中，第一表面13a是与第二表面13b相对的表面，第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。从边缘13c延伸到边缘13d的划线标记SM1例如在第一断裂面27的一端形成，划线标记SM1等具有从边缘13c延伸到边缘13d的凹陷形状。断裂面27,29不是通过干蚀刻形成的，因此与常规的切割面不同，例如c面，m面或者a平面。使用能够实现低阈值电流的频带转换的发射是可行的。

9. 发明授权

US07970618B2 Content distribution server for distributing content frame for reproducing music and terminal 失效
标题翻译：用于分发用于再现音乐和终端的内容帧的内容分发服务器
公开(公告)号：US07970618B2
公开(公告)日：2011-06-28
申请号：US10592365
申请日：2005-03-31
申请人： Shigeyuki Sakazawa , Koichi Takagi , Hiroshi Mitsuhashi , Koji Katayama
发明人： Shigeyuki Sakazawa , Koichi Takagi , Hiroshi Mitsuhashi , Koji Katayama
IPC分类号： G10L19/00
CPC分类号： H04L12/18 , G06Q30/0601 , H04M19/04
摘要： There is provided a system capable of distributing code-compressed data based on audio data on a music composition via the Internet to a mobile telephone so that a user can cut out a desired range from the code-compressed data and register it as a call sound. The system has a data structure of a content frame (3GPP, 3GPP2) containing code-compressed data (AAC) of audio data. The content frame has at least one cut-out position information in the AAC data in its extended function section. A mobile telephone has a content storage unit, a cut-out selection unit to be used by the user to select at least one cut-out position information contained in the extended function section of the content frame, and a data cut-out section for cutting out data from the code-compressed data. The code-compressed data which has been cut out is decompressed when called and the sound is outputted from a loudspeaker.
摘要翻译：提供了一种能够经由因特网将基于音乐数据的音频数据的代码压缩数据分发到移动电话的系统，使得用户可以从代码压缩数据中切出期望的范围并将其注册为通话声音。该系统具有包含音频数据的代码压缩数据（AAC）的内容帧（3GPP，3GPP2）的数据结构。内容帧在其扩展功能部分中的AAC数据中具有至少一个切出位置信息。移动电话具有内容存储单元，切入选择单元，用于用户选择包含在内容帧的扩展功能部分中的至少一个切出位置信息，以及数据切出部分，用于从代码压缩数据中切出数据。已被切出的代码压缩数据在被呼叫时被解压缩，声音从扬声器输出。

10. 发明申请

US20110108853A1 COMPOUND SEMICONDUCTOR DEVICE 失效
标题翻译：化合物半导体器件
公开(公告)号：US20110108853A1
公开(公告)日：2011-05-12
申请号：US12835003
申请日：2010-07-13
申请人： Masahiro ADACHI , Shinji Tokuyama , Koji Katayama
发明人： Masahiro ADACHI , Shinji Tokuyama , Koji Katayama
IPC分类号： H01L29/24 , H01L29/20
CPC分类号： H01L33/40 , H01L33/32 , H01L33/34
摘要： A compound semiconductor device having reduced contact resistance to an electrode is provided. The compound semiconductor device includes an n-substrate 3 comprising a hexagonal compound semiconductor GaN and having surfaces S1 and S2; an n-electrode 13 formed on the surface S1 of the n-substrate 3; a layered product having an n-cladding layer 5, an active layer 7, a p-cladding layer 9, and a contact layer 11 formed on the surface S2 of the n-substrate 3; and a p-electrode 15 formed on the p-cladding layer 9. The number of N atoms contained on the surface S1 of the n-substrate 3 is more than the number of Ga atoms contained on the surface S1. The electrode formed on the surface S1 is an n-electrode 13. The surface S1 has an oxygen concentration of not more than 5 atomic percent. The number of Ga atoms contained on the surface S3 of the contact layer 11 is more than the number of N atoms contained on the surface S3. The electrode formed on the surface S3 is a p-electrode 15. The surface S3 has an oxygen concentration of not more than 5 atomic percent.
摘要翻译：提供具有降低的与电极的接触电阻的化合物半导体器件。该化合物半导体器件包括包含六方晶系化合物半导体GaN并具有表面S1和S2的n衬底3; 形成在n基板3的表面S1上的n电极13; 具有形成在n基板3的表面S2上的n包层5，有源层7，p包覆层9和接触层11的层叠体，以及形成在p包覆层9上的p电极15.包含在n基板3的表面S1上的N原子的数量大于表面S1上包含的Ga原子的数量。形成在表面S1上的电极是n电极13.表面S1的氧浓度不大于5原子％。接触层11的表面S3上所含的Ga原子数多于表面S3所含的N原子数。形成在表面S3上的电极是p电极15.表面S3的氧浓度不大于5原子％。

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