专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110108853A1 COMPOUND SEMICONDUCTOR DEVICE 失效
标题翻译：化合物半导体器件
公开(公告)号：US20110108853A1
公开(公告)日：2011-05-12
申请号：US12835003
申请日：2010-07-13
申请人： Masahiro ADACHI , Shinji Tokuyama , Koji Katayama
发明人： Masahiro ADACHI , Shinji Tokuyama , Koji Katayama
IPC分类号： H01L29/24 , H01L29/20
CPC分类号： H01L33/40 , H01L33/32 , H01L33/34
摘要： A compound semiconductor device having reduced contact resistance to an electrode is provided. The compound semiconductor device includes an n-substrate 3 comprising a hexagonal compound semiconductor GaN and having surfaces S1 and S2; an n-electrode 13 formed on the surface S1 of the n-substrate 3; a layered product having an n-cladding layer 5, an active layer 7, a p-cladding layer 9, and a contact layer 11 formed on the surface S2 of the n-substrate 3; and a p-electrode 15 formed on the p-cladding layer 9. The number of N atoms contained on the surface S1 of the n-substrate 3 is more than the number of Ga atoms contained on the surface S1. The electrode formed on the surface S1 is an n-electrode 13. The surface S1 has an oxygen concentration of not more than 5 atomic percent. The number of Ga atoms contained on the surface S3 of the contact layer 11 is more than the number of N atoms contained on the surface S3. The electrode formed on the surface S3 is a p-electrode 15. The surface S3 has an oxygen concentration of not more than 5 atomic percent.
摘要翻译：提供具有降低的与电极的接触电阻的化合物半导体器件。该化合物半导体器件包括包含六方晶系化合物半导体GaN并具有表面S1和S2的n衬底3; 形成在n基板3的表面S1上的n电极13; 具有形成在n基板3的表面S2上的n包层5，有源层7，p包覆层9和接触层11的层叠体，以及形成在p包覆层9上的p电极15.包含在n基板3的表面S1上的N原子的数量大于表面S1上包含的Ga原子的数量。形成在表面S1上的电极是n电极13.表面S1的氧浓度不大于5原子％。接触层11的表面S3上所含的Ga原子数多于表面S3所含的N原子数。形成在表面S3上的电极是p电极15.表面S3的氧浓度不大于5原子％。

2. 发明授权

US07933303B2 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 有权
标题翻译： III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
公开(公告)号：US07933303B2
公开(公告)日：2011-04-26
申请号：US12844446
申请日：2010-07-27
申请人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
发明人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。因此，通过能够实现低阈值电流的带状转变来利用发射是可行的。在激光结构13中，第一表面13a与第二表面13b相对。第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

3. 发明授权

US08917750B2 III-nitride semiconductor laser diode 有权
标题翻译： III族氮化物半导体激光二极管
公开(公告)号：US08917750B2
公开(公告)日：2014-12-23
申请号：US13328622
申请日：2011-12-16
申请人： Masahiro Adachi , Shinji Tokuyama , Yohei Enya , Takashi Kyono , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Koji Katayama , Takatoshi Ikegami , Takao Nakamura
发明人： Masahiro Adachi , Shinji Tokuyama , Yohei Enya , Takashi Kyono , Yusuke Yoshizumi , Katsushi Akita , Masaki Ueno , Koji Katayama , Takatoshi Ikegami , Takao Nakamura
IPC分类号： H01S5/00 , H01S5/343 , H01S5/32 , H01S5/20 , B82Y20/00 , H01S5/30 , H01S5/22
CPC分类号： H01S5/2004 , B82Y20/00 , H01S5/22 , H01S5/309 , H01S5/3202 , H01S5/34333 , H01S2301/18 , H01S2302/00
摘要： Provided is a III-nitride semiconductor laser diode which is capable of lasing at a low threshold. A support base has a semipolar or nonpolar primary surface. The c-axis Cx of a III-nitride is inclined relative to the primary surface. An n-type cladding region and a p-type cladding region are provided above the primary surface of the support base. A core semiconductor region is provided between the n-type cladding region and the p-type cladding region. The core semiconductor region includes a first optical guide layer, an active layer, and a second optical guide layer. The active layer is provided between the first optical guide layer and the second optical guide layer. The thickness of the core semiconductor region is not less than 0.5 μm. This structure allows the confinement of light into the core semiconductor region without leakage of light into the support base, and therefore enables reduction in threshold current.
摘要翻译：提供能够以低阈值激光的III族氮化物半导体激光二极管。支撑底座具有半极性或非极性主表面。 III族氮化物的c轴Cx相对于主表面倾斜。在支撑基体的主表面上方设置有n型包层区域和p型包层区域。芯型半导体区域设置在n型包层区域和p型包层区域之间。芯半导体区域包括第一光导层，有源层和第二光导层。有源层设置在第一光导层和第二光导层之间。芯半导体区域的厚度不小于0.5μm。这种结构允许将光限制在芯半导体区域中，而不会将光泄漏到支撑基底中，因此能够降低阈值电流。

4. 发明授权

US08693515B2 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 有权
标题翻译： III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
公开(公告)号：US08693515B2
公开(公告)日：2014-04-08
申请号：US13050330
申请日：2011-03-17
申请人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
发明人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
IPC分类号： H01S5/223
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。因此，通过能够实现低阈值电流的带状转变来利用发射是可行的。在激光结构13中，第一表面13a与第二表面13b相对。第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

5. 发明授权

US08306082B2 Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device 有权
标题翻译： III族氮化物半导体激光器件及III族氮化物半导体激光器件的制造方法
公开(公告)号：US08306082B2
公开(公告)日：2012-11-06
申请号：US12846361
申请日：2010-07-29
申请人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
发明人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01S5/0014 , H01S5/0021 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S5/3211
摘要： A group-III nitride semiconductor laser device comprises a laser structure including a support base and a semiconductor region, and an electrode provided on the semiconductor region of the laser structure. The support base comprises a hexagonal group-III nitride semiconductor and has a semipolar primary surface, and the semiconductor region is provided on the semipolar primary surface of the support base. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer. The first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis to the semipolar primary surface. The active layer comprises a gallium nitride-based semiconductor layer. The c-axis of the hexagonal group-III nitride semiconductor of the support base tilts at a finite angle ALPHA with respect to a normal axis toward an a-axis of the hexagonal group-III nitride semiconductor. The laser structure includes first and second fractured faces intersecting with an a-n plane defined by the normal axis and the a-axis of the hexagonal group-III nitride semiconductor. The laser cavity of the group-III nitride semiconductor laser device includes the first and second fractured faces. The laser structure includes first and second surfaces and the first surface is opposite to the second surface, and each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface.
摘要翻译： III族氮化物半导体激光器件包括具有支撑基极和半导体区域的激光器结构以及设置在激光器结构的半导体区域上的电极。支撑基底包括六方晶III族氮化物半导体，并且具有半极性主表面，并且半导体区域设置在支撑基底的半极性主表面上。半导体区域包括第一导电型氮化镓基半导体的第一包覆层，第二导电型氮化镓基半导体的第二包覆层和有源层。第一包层，第二包覆层和有源层沿着正交轴线配置到半极性主表面。有源层包括氮化镓基半导体层。支撑基座的六角形III族氮化物半导体的c轴相对于六边形III族氮化物半导体的a轴的法线轴线以有限角度ALPHA倾斜。激光结构包括与由六角形III族氮化物半导体的法线轴和a轴限定的a-n平面相交的第一和第二断裂面。 III族氮化物半导体激光器件的激光腔包括第一和第二断裂面。激光结构包括第一表面和第二表面，并且第一表面与第二表面相对，并且第一和第二断裂面中的每一个从第一表面的边缘延伸到第二表面的边缘。

6. 发明申请

US20110175201A1 GROUP III NITRIDE SEMICONDUCTOR DEVICE 失效
标题翻译： III类氮化物半导体器件
公开(公告)号：US20110175201A1
公开(公告)日：2011-07-21
申请号：US12834977
申请日：2010-07-13
申请人： Shinji Tokuyama , Masaki Ueno , Masahiro Adachi , Takashi Kyono , Takamichi Sumitomo , Koji Katayama , Yoshihiro Saito
发明人： Shinji Tokuyama , Masaki Ueno , Masahiro Adachi , Takashi Kyono , Takamichi Sumitomo , Koji Katayama , Yoshihiro Saito
IPC分类号： H01L29/20
CPC分类号： H01L21/28575 , H01L29/045 , H01L29/2003 , H01L29/452 , H01L33/32 , H01L33/40
摘要： A Group III nitride semiconductor device has a semiconductor region, a metal electrode, and a transition layer. The semiconductor region has a surface comprised of a Group III nitride crystal. The semiconductor region is doped with a p-type dopant. The surface is one of a semipolar surface and a nonpolar surface. The metal electrode is provided on the surface. The transition layer is formed between the Group III nitride crystal of the semiconductor region and the metal electrode. The transition layer is made by interdiffusion of a metal of the metal electrode and a Group III nitride of the semiconductor region.
摘要翻译： III族氮化物半导体器件具有半导体区域，金属电极和过渡层。半导体区具有由III族氮化物晶体组成的表面。半导体区域掺杂有p型掺杂剂。表面是半极性表面和非极性表面之一。金属电极设置在表面上。在半导体区域的III族氮化物晶体和金属电极之间形成过渡层。过渡层是通过金属电极的金属和半导体区域的III族氮化物的相互扩散而制成的。

7. 发明授权

US08581296B2 Compound semiconductor device 失效
标题翻译：复合半导体器件
公开(公告)号：US08581296B2
公开(公告)日：2013-11-12
申请号：US12835003
申请日：2010-07-13
申请人： Masahiro Adachi , Shinji Tokuyama , Koji Katayama
发明人： Masahiro Adachi , Shinji Tokuyama , Koji Katayama
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/34
摘要： A compound semiconductor device having reduced contact resistance to an electrode is provided. The compound semiconductor device includes an n-substrate 3 comprising a hexagonal compound semiconductor GaN and having surfaces S1 and S2; an n-electrode 13 formed on the surface S1 of the n-substrate 3; a layered product having an n-cladding layer 5, an active layer 7, a p-cladding layer 9, and a contact layer 11 formed on the surface S2 of the n-substrate 3; and a p-electrode 15 formed on the p-cladding layer 9. The number of N atoms contained on the surface S1 of the n-substrate 3 is more than the number of Ga atoms contained on the surface S1. The electrode formed on the surface S1 is an n-electrode 13. The surface S1 has an oxygen concentration of not more than 5 atomic percent. The number of Ga atoms contained on the surface S3 of the contact layer 11 is more than the number of N atoms contained on the surface S3. The electrode formed on the surface S3 is a p-electrode 15. The surface S3 has an oxygen concentration of not more than 5 atomic percent.
摘要翻译：提供了具有降低的与电极的接触电阻的化合物半导体器件。该化合物半导体器件包括包含六方晶系化合物半导体GaN并具有表面S1和S2的n衬底3; 形成在n基板3的表面S1上的n电极13; 具有形成在n基板3的表面S2上的n包层5，有源层7，p包覆层9和接触层11的层叠体，以及形成在p包覆层9上的p电极15.包含在n基板3的表面S1上的N原子的数量大于表面S1上包含的Ga原子的数量。形成在表面S1上的电极是n电极13.表面S1的氧浓度不大于5原子％。接触层11的表面S3上所含的Ga原子数多于表面S3所含的N原子数。形成在表面S3上的电极是p电极15.表面S3的氧浓度不大于5原子％。

8. 发明授权

US08507305B2 Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrate 失效
标题翻译： III族氮化物半导体激光器件，III族氮化物半导体激光器件的制造方法和外延衬底
公开(公告)号：US08507305B2
公开(公告)日：2013-08-13
申请号：US13443480
申请日：2012-04-10
申请人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Nobuhiro Saga , Masahiro Adachi , Kazuhide Sumiyoshi , Shinji Tokuyama , Shimpei Takagi , Takatoshi Ikegami , Masaki Ueno , Koji Katayama
发明人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Nobuhiro Saga , Masahiro Adachi , Kazuhide Sumiyoshi , Shinji Tokuyama , Shimpei Takagi , Takatoshi Ikegami , Masaki Ueno , Koji Katayama
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/0207 , H01S5/2201 , H01S5/3202
摘要： A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which includes a hexagonal III-nitride semiconductor and a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer.
摘要翻译： III族氮化物半导体激光器件具有激光结构和电极。激光器结构包括支撑基底，其包括六边形III族氮化物半导体和半极性主表面，以及设置在半极性主表面上的半导体区域。电极设置在半导体区域上。半导体区域包括第一导电型GaN基半导体的第一包层，第二导电型GaN基半导体的第二包层和设置在第一包层和第二包层之间的有源层。

9. 发明授权

US08415707B2 Group III nitride semiconductor device 失效
标题翻译： III族氮化物半导体器件
公开(公告)号：US08415707B2
公开(公告)日：2013-04-09
申请号：US12834977
申请日：2010-07-13
申请人： Shinji Tokuyama , Masaki Ueno , Masahiro Adachi , Takashi Kyono , Takamichi Sumitomo , Koji Katayama , Yoshihiro Saito
发明人： Shinji Tokuyama , Masaki Ueno , Masahiro Adachi , Takashi Kyono , Takamichi Sumitomo , Koji Katayama , Yoshihiro Saito
IPC分类号： H01L33/00
CPC分类号： H01L21/28575 , H01L29/045 , H01L29/2003 , H01L29/452 , H01L33/32 , H01L33/40
摘要： A Group III nitride semiconductor device has a semiconductor region, a metal electrode, and a transition layer. The semiconductor region has a surface comprised of a Group III nitride crystal. The semiconductor region is doped with a p-type dopant. The surface is one of a semipolar surface and a nonpolar surface. The metal electrode is provided on the surface. The transition layer is formed between the Group III nitride crystal of the semiconductor region and the metal electrode. The transition layer is made by interdiffusion of a metal of the metal electrode and a Group III nitride of the semiconductor region.
摘要翻译： III族氮化物半导体器件具有半导体区域，金属电极和过渡层。半导体区域具有由III族氮化物晶体组成的表面。半导体区域掺杂有p型掺杂剂。表面是半极性表面和非极性表面之一。金属电极设置在表面上。在半导体区域的III族氮化物晶体和金属电极之间形成过渡层。过渡层是通过金属电极的金属和半导体区域的III族氮化物的相互扩散而制成的。

10. 发明申请

US20120058583A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 有权
标题翻译： III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法
公开(公告)号：US20120058583A1
公开(公告)日：2012-03-08
申请号：US13240368
申请日：2011-09-22
申请人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
发明人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
IPC分类号： H01L33/62
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。在激光结构13中，第一表面13a与第二表面13b相对。第一和第二断裂面27,29从第一表面的边缘13c延伸到第二表面13b的边缘13d。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式