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1. 发明授权

US5756364A Laser processing method of semiconductor device using a catalyst 失效
标题翻译：使用催化剂的半导体器件的激光加工方法
公开(公告)号：US5756364A
公开(公告)日：1998-05-26
申请号：US562274
申请日：1995-11-22
申请人： Koichiro Tanaka , Naoaki Yamaguchi
发明人： Koichiro Tanaka , Naoaki Yamaguchi
IPC分类号： G02F1/1362 , G03F7/00 , G03F7/20 , H01L21/20 , H01L21/77 , H01L21/84 , H01L21/268
CPC分类号： H01L21/2026 , G03F7/0007 , G03F7/2006 , G03F7/704 , G03F7/70425 , H01L27/1214 , G02F1/13454 , Y10S117/904 , Y10S148/09 , Y10S148/093
摘要： It is intended to provide a technique of separately forming thin-film transistors disposed in a peripheral circuit area and those disposed in a pixel area in accordance with characteristics required therefor in a manufacturing process of semiconductor devices to constitute a liquid crystal display device. In an annealing step by laser light illumination, laser light is selectively applied to a semiconductor thin-film by partially masking it. For example, to illuminate the peripheral circuit area and the pixel area with laser light under different conditions in manufacture of an active matrix liquid crystal display device, laser light is applied at necessary illumination energy densities by using a mask. In this manner, a crystalline silicon film having a necessary degree of crystallinity in a selective manner can be obtained.
摘要翻译：旨在提供一种在半导体器件的制造工艺中根据所需的特性分别形成设置在外围电路区域中的薄膜晶体管和设置在像素区域中的技术，以构成液晶显示装置。在通过激光照射的退火步骤中，通过部分地掩蔽激光将半导体薄膜选择性地施加激光。例如，为了在有源矩阵型液晶显示装置的制造中，在不同条件下用激光照射外围电路区域和像素区域，通过使用掩模以必要的照射能量密度施加激光。以这种方式，可以获得具有选择性的必需结晶度的结晶硅膜。

2. 发明授权

US07078246B2 Optical processing apparatus and optical processing method 失效
公开(公告)号：US07078246B2
公开(公告)日：2006-07-18
申请号：US10816899
申请日：2004-04-05
申请人： Naoaki Yamaguchi , Koichiro Tanaka , Satoshi Teramoto
发明人： Naoaki Yamaguchi , Koichiro Tanaka , Satoshi Teramoto
IPC分类号： H01L21/00
CPC分类号： C30B13/24 , Y10S117/904
摘要： In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index value. For example, laser light irradiation conditions are adjusted so that semiconductor thin films always have the same refractive index. As a result, the annealing can be performed under the same conditions at every laser light irradiation even if the laser light irradiation conditions vary unavoidably.

3. 发明授权

US06716283B2 Optical processing apparatus and optical processing method 失效
标题翻译：光学处理设备和光学处理方法
公开(公告)号：US06716283B2
公开(公告)日：2004-04-06
申请号：US10035441
申请日：2002-01-04
申请人： Naoaki Yamaguchi , Koichiro Tanaka , Satoshi Teramoto
发明人： Naoaki Yamaguchi , Koichiro Tanaka , Satoshi Teramoto
IPC分类号： C03B100
CPC分类号： C30B13/24 , Y10S117/904
摘要： In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index value. For example, laser light irradiation conditions are adjusted so that semiconductor thin films always have the same refractive index. As a result, the annealing can be performed under the same conditions at every laser light irradiation even if the laser light irradiation conditions vary unavoidably.
摘要翻译：在对半导体薄膜照射激光的退火处理中，测定激光照射后的半导体薄膜的折射率，并根据测定的折射率值来调整下一激光照射的条件。例如，调整激光照射条件，使得半导体薄膜总是具有相同的折射率。结果，即使激光照射条件不可避免地变化，也可以在每次激光照射下的相同条件下进行退火。

4. 发明授权

US06336969B1 Optical processing apparatus and optical processing method 有权
标题翻译：光学处理设备和光学处理方法
公开(公告)号：US06336969B1
公开(公告)日：2002-01-08
申请号：US09547716
申请日：2000-04-11
申请人： Naoaki Yamaguchi , Koichiro Tanaka , Satoshi Teramoto
发明人： Naoaki Yamaguchi , Koichiro Tanaka , Satoshi Teramoto
IPC分类号： C30B100
CPC分类号： C30B13/24 , Y10S117/904
摘要： In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index value. For example, laser light irradiation conditions are adjusted so that semiconductor thin films always have the same refractive index. As a result, the annealing can be performed under the same conditions at every laser light irradiation even if the laser light irradiation conditions vary unavoidably.
摘要翻译：在对半导体薄膜照射激光的退火处理中，测定激光照射后的半导体薄膜的折射率，并根据测定的折射率值来调整下一激光照射的条件。例如，调整激光照射条件，使得半导体薄膜总是具有相同的折射率。结果，即使激光照射条件不可避免地变化，也可以在每次激光照射下的相同条件下进行退火。

5. 发明授权

US6059873A Optical processing method with control of the illumination energy of laser light 失效
标题翻译：光学处理方法可以控制激光的照明能量
公开(公告)号：US6059873A
公开(公告)日：2000-05-09
申请号：US451648
申请日：1995-05-26
申请人： Naoaki Yamaguchi , Koichiro Tanaka , Satoshi Teramoto
发明人： Naoaki Yamaguchi , Koichiro Tanaka , Satoshi Teramoto
IPC分类号： C30B13/24 , C30B1/00 , H01L21/26
CPC分类号： C30B13/24 , Y10S117/904
摘要： In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index value. For example, laser light irradiation conditions are adjusted so that semiconductor thin films always have the same refractive index. As a result, the annealing can be performed under the same conditions at every laser light irradiation even if the laser light irradiation conditions vary unavoidably. For a crystalline silicon film, if the refractive index is larger than 3.5, then a thin-film transistor using such as film has desired crystallinity and flatness properties such that a field-effect mobility is greater than 100 cm.sup.2 /Vsec.
摘要翻译：在对半导体薄膜照射激光的退火处理中，测定激光照射后的半导体薄膜的折射率，并根据测定的折射率值来调整下一激光照射的条件。例如，调整激光照射条件，使得半导体薄膜总是具有相同的折射率。结果，即使激光照射条件不可避免地变化，也可以在每次激光照射下的相同条件下进行退火。对于结晶硅膜，如果折射率大于3.5，则使用诸如膜的薄膜晶体管具有期望的结晶度和平坦度特性，使得场效应迁移率大于100cm 2 / Vsec。

6. 发明授权

US6008101A Laser processing method of semiconductor device 失效
标题翻译：半导体器件的激光加工方法
公开(公告)号：US6008101A
公开(公告)日：1999-12-28
申请号：US968480
申请日：1997-11-12
申请人： Koichiro Tanaka , Naoaki Yamaguchi
发明人： Koichiro Tanaka , Naoaki Yamaguchi
IPC分类号： G03F1/00 , G03F7/20 , H01L21/20 , H01L21/77 , H01L21/84 , H01L29/792 , H01L21/306
CPC分类号： G03F7/70425 , G03F7/704 , G03F7/70466 , H01L21/2026 , H01L27/1229 , H01L27/1277 , H01L27/1285
摘要： It is intended to provide a technique of separately forming thin-film transistors disposed in a peripheral circuit area and those disposed in a pixel area in accordance with characteristics required therefor in a manufacturing process of semiconductor devices to constitute a liquid crystal display device. In an annealing step by laser light illumination, laser light is selectively applied to a semiconductor thin-film by partially masking it. For example, to illuminate the peripheral circuit area and the pixel area with laser light under different conditions in manufacture of an active matrix liquid crystal display device, laser light is applied at necessary illumination energy densities by using a mask. In this manner, a crystalline silicon film having a necessary degree of crystallinity in a selective manner can be obtained.
摘要翻译：旨在提供一种在半导体器件的制造工艺中根据所需的特性分别形成设置在外围电路区域中的薄膜晶体管和设置在像素区域中的技术，以构成液晶显示装置。在通过激光照射的退火步骤中，通过部分地掩蔽激光将半导体薄膜选择性地施加激光。例如，为了在有源矩阵型液晶显示装置的制造中，在不同条件下用激光照射外围电路区域和像素区域，通过使用掩模以必要的照射能量密度施加激光。以这种方式，可以获得具有选择性的必需结晶度的结晶硅膜。

7. 发明授权

US07675060B2 Semiconductor device and method for producing it 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07675060B2
公开(公告)日：2010-03-09
申请号：US11705710
申请日：2007-02-14
申请人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
发明人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1277 , H01L27/14609 , H01L29/42384 , H01L29/4908 , H01L29/66765
摘要： Disclosed is a technique of improving the heat resistance of the aluminum gate electrode in bottom-gate-type TFT of which the active layer is made of a crystalline silicon film. A pattern of a laminate of a titanium film 102 and an aluminum film 103 is formed on a glass substrate 101. The pattern is to give a gate electrode 100. Then, the titanium film 102 is side-etched. Next, the layered substrate is heated to thereby intentionally form hillocks and whiskers on the surface of the aluminum pattern 103. Next, the aluminum pattern 103 acting as an anode is subjected to anodic oxidation to form an oxide film 105 thereon. The anodic oxidation extends to the lower edge of the aluminum pattern 103, at which the titanium layer was side-etched. Next, a gate-insulating film 106 and an amorphous silicon film are formed. A mask is formed over the pattern, which is to give the gate electrode, and then a nickel acetate solution is applied to the layered structure. Thus, nickel is kept in contact with the surface of the structure. Next, this is heated to induce crystal growth in the silicon film from the region contacted with nickel to the masked region. In the bottom-gate-type TFT thus produced, the active layer is made of a crystalline silicon film. In this process, since the anodic oxide film is formed as in FIG. 1(C), aluminum does neither melt to flow away nor diffuse away. Thus, the heat resistance of the aluminum electrode formed is improved.
摘要翻译：公开了一种提高活性层由结晶硅膜制成的底栅型TFT中的铝栅电极的耐热性的技术。在玻璃基板101上形成钛膜102和铝膜103的叠层图案。图案是给予栅电极100.然后，对钛膜102进行侧蚀刻。接下来，加热层叠基板，从而有意地在铝图案103的表面上形成小丘和晶须。接下来，将用作阳极的铝图案103进行阳极氧化以在其上形成氧化膜105。阳极氧化延伸到铝图案103的下边缘，钛层被侧蚀刻。接下来，形成栅极绝缘膜106和非晶硅膜。在图案上形成掩模，得到栅电极，然后将乙酸镍溶液施加到层状结构。因此，镍与结构的表面保持接触。接下来，将其加热以在与镍接触的区域中的硅膜中引起晶体生长至掩蔽区域。在如此制造的底栅型TFT中，有源层由结晶硅膜制成。在该方法中，由于阳极氧化膜如图1所示那样形成。如图1（C）所示，铝既不熔化，也不会流失。因此，形成的铝电极的耐热性得到改善。

8. 发明申请

US20090289254A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090289254A1
公开(公告)日：2009-11-26
申请号：US12534382
申请日：2009-08-03
申请人： Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara , Hongyong Zhang , Atsunori Suzuki , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi , Yasuhiko Takemura
发明人： Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara , Hongyong Zhang , Atsunori Suzuki , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi , Yasuhiko Takemura
IPC分类号： H01L29/786 , H01L29/04 , H01L27/12
CPC分类号： H01L29/665 , H01L21/02145 , H01L21/02244 , H01L21/02258 , H01L21/31116 , H01L21/31144 , H01L21/31683 , H01L21/31687 , H01L21/321 , H01L27/124 , H01L27/127 , H01L29/458 , H01L29/66598 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.
摘要翻译：形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。此后，进行一个导电性元素的离子掺杂。高电阻率区域限定在栅极绝缘膜下。

9. 发明授权

US07504288B1 Method for laser-processing semiconductor device 有权
标题翻译：激光加工半导体器件的方法
公开(公告)号：US07504288B1
公开(公告)日：2009-03-17
申请号：US09633869
申请日：2000-08-07
申请人： Hongyong Zhang , Naoaki Yamaguchi , Yasuhiko Takemura
发明人： Hongyong Zhang , Naoaki Yamaguchi , Yasuhiko Takemura
IPC分类号： H01L21/30
CPC分类号： H01L27/1285 , G02F1/13454 , H01L27/1296
摘要： A linear laser light which has an energy and is to be scanned is irradiated to a semiconductor device formed on a substrate, and then the substrate is rotated to irradiate to the semiconductor device a linear laser light which has a higher energy than that of the irradiated linear laser light and is to be scanned. Also, in a semiconductor device having an analog circuit region and a remaining circuit region wherein the analog circuit region is smaller than the remaining circuit region, a linear laser light having an irradiation area is irradiated to the analog circuit region without moving the irradiation area so as not to overlap the laser lights by scanning. On the other hand, the linear laser light to be scanned is irradiated to the remaining circuit region.
摘要翻译：将具有能量并被扫描的能量的线性激光照射到形成在基板上的半导体器件，然后旋转基板以向半导体器件照射具有比照射的能量更高的能量的线性激光线性激光并被扫描。此外，在具有模拟电路区域和模拟电路区域小于剩余电路区域的剩余电路区域的半导体器件中，具有照射区域的线性激光照射到模拟电路区域而不移动照射区域因为不要通过扫描与激光重叠。另一方面，要扫描的线性激光照射到剩余电路区域。

10. 发明申请

US20080020554A1 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20080020554A1
公开(公告)日：2008-01-24
申请号：US11808035
申请日：2007-06-06
申请人： Hisashi Ohtani , Akiharu Miyanaga , Hongyong Zhang , Naoaki Yamaguchi
发明人： Hisashi Ohtani , Akiharu Miyanaga , Hongyong Zhang , Naoaki Yamaguchi
IPC分类号： H01L21/84
CPC分类号： H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02686 , H01L27/1277 , H01L29/66757
摘要： [Purpose] It is an object to obtain a crystalline silicon film having preferable characteristics for a thin film transistor. [Structure] A crystalline silicon film having improved crystallinity is obtained by the following steps: forming a silicon nitride film substantially in contact with an amorphous silicon film on glass substrate; introducing a catalyst element such as nickel; performing an annealing treatment at a temperature of 500 to 600° C. for crystallization; and further irradiating it with a laser light, thereby a crystalline silicon film having improved crystallinity can be obtained. By using the crystalline silicon film thus obtained, a semiconductor device such as a TFT having improved characteristic can be obtained.
摘要翻译： [目的]本发明的目的是获得具有优选薄膜晶体管特性的结晶硅膜。 [结构]通过以下步骤获得具有改善的结晶度的晶体硅膜：在玻璃基板上形成与非晶硅膜基本上接触的氮化硅膜; 引入催化剂元素如镍; 在500〜600℃的温度下进行退火处理，进行结晶化; 并进一步用激光照射，从而可以获得具有改善的结晶度的结晶硅膜。通过使用由此获得的结晶硅膜，可以获得具有改善的特性的诸如TFT的半导体器件。

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