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1. 发明授权

US07636378B2 Semiconductor laser diode 有权
标题翻译：半导体激光二极管
公开(公告)号：US07636378B2
公开(公告)日：2009-12-22
申请号：US12028127
申请日：2008-02-08
申请人： Takeshi Kitatani , Kazunori Shinoda , Koichiro Adachi , Masahiro Aoki
发明人： Takeshi Kitatani , Kazunori Shinoda , Koichiro Adachi , Masahiro Aoki
IPC分类号： H01S5/00
CPC分类号： H01S5/125 , H01S5/0207 , H01S5/026 , H01S5/0267 , H01S5/1039 , H01S5/1085 , H01S5/12 , H01S5/168 , H01S5/18 , H01S5/22
摘要： In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.
摘要翻译：在具有脊 - 波导结构的窗口区域的边缘发射激光器中，特别地，在具有低电流操作的短腔型激光器中，存在由于窗口的电流泄漏而使其工作电流增加的问题一部分。为了解决这个问题，在窗口区域中，插入n型衬底和p型覆层之间，掺杂Ru的半绝缘半导体层。或者，引入Ru掺杂层和Fe掺杂层的堆叠结构。

2. 发明申请

US20090129421A1 SEMICONDUCTOR LASER DIODE 有权
标题翻译：半导体激光二极管
公开(公告)号：US20090129421A1
公开(公告)日：2009-05-21
申请号：US12028127
申请日：2008-02-08
申请人： Takeshi Kitatani , Kazunori Shinoda , Koichiro Adachi , Masahiro Aoki
发明人： Takeshi Kitatani , Kazunori Shinoda , Koichiro Adachi , Masahiro Aoki
IPC分类号： H01S5/323
CPC分类号： H01S5/125 , H01S5/0207 , H01S5/026 , H01S5/0267 , H01S5/1039 , H01S5/1085 , H01S5/12 , H01S5/168 , H01S5/18 , H01S5/22
摘要： In an edge emitting laser having a window region with a ridge-waveguide structure, particularly, in a short cavity type of a laser operated with a low current, there has been a problem of its operating current being increased due to current leakage of the window portion. To solve this problem, in the window region, between an n-type substrate and a p-type cladding layer, a semi-insulating semiconductor layer into which Ru is doped is inserted. Alternatively, a stacked structure of a Ru-doped layer and a Fe-doped layer is introduced.
摘要翻译：在具有脊 - 波导结构的窗口区域的边缘发射激光器中，特别地，在具有低电流操作的短腔型激光器中，存在由于窗口的电流泄漏而使其工作电流增加的问题一部分。为了解决这个问题，在窗口区域中，插入n型衬底和p型覆层之间，掺杂Ru的半绝缘半导体层。或者，引入Ru掺杂层和Fe掺杂层的堆叠结构。

3. 发明授权

US07340142B1 Integrated optoelectronic device and method of fabricating the same 有权
标题翻译：集成光电子器件及其制造方法
公开(公告)号：US07340142B1
公开(公告)日：2008-03-04
申请号：US11701467
申请日：2007-02-02
申请人： Kazunori Shinoda , Takashi Shiota , Tomonobu Tsuchiya , Takeshi Kitatani , Masahiro Aoki
发明人： Kazunori Shinoda , Takashi Shiota , Tomonobu Tsuchiya , Takeshi Kitatani , Masahiro Aoki
IPC分类号： G02F1/035 , G02F1/295 , G02B6/26 , G02B6/10 , G02B6/12 , H01L21/00
CPC分类号： G02B6/12004 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , H01S5/0265
摘要： An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. An InGaAsP layer is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.
摘要翻译：集成光电子器件包括含有InGaAlAs作为主要成分的光波导元件，其形成在InP衬底上并且通过对接连接以端对端的方式连接。在InP衬底上形成InGaAsP层，以抑制在集成光电子器件的制造期间InP的质量传输。在InP衬底在约700℃的晶体生长温度下加热之前形成InGaAsP层以形成InGaAlAs光波导元件。

4. 发明申请

US20080069493A1 INTEGRATED OPTOELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：集成光电装置及其制造方法
公开(公告)号：US20080069493A1
公开(公告)日：2008-03-20
申请号：US11701467
申请日：2007-02-02
申请人： Kazunori Shinoda , Takashi Shiota , Tomonobu Tsuchiya , Takeshi Kitatani , Masahiro Aoki
发明人： Kazunori Shinoda , Takashi Shiota , Tomonobu Tsuchiya , Takeshi Kitatani , Masahiro Aoki
IPC分类号： G02B6/12 , H01L21/00
CPC分类号： G02B6/12004 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , H01S5/0265
摘要： An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. AnInGaAs Player is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.
摘要翻译：集成光电子器件包括含有InGaAlAs作为主要成分的光波导元件，其形成在InP衬底上并且通过对接连接以端对端的方式连接。在InP衬底上形成AnInGaAs Player，以在集成光电子器件的制造期间抑制InP的质量传输。在InP衬底在约700℃的晶体生长温度下加热之前形成InGaAsP层以形成InGaAlAs光波导元件。

5. 发明申请

US20120327965A1 SEMICONDUCTOR LASER ELEMENT, METHOD OF MANUFACTURING SEMICONDUCTOR LASER ELEMENT, AND OPTICAL MODULE 审中-公开
标题翻译：半导体激光元件，制造半导体激光元件的方法和光学模块
公开(公告)号：US20120327965A1
公开(公告)日：2012-12-27
申请号：US13521555
申请日：2010-02-02
申请人： Kazunori Shinoda , Koichiro Adachi , Shinji Tsuji , Masahiro Aoki
发明人： Kazunori Shinoda , Koichiro Adachi , Shinji Tsuji , Masahiro Aoki
IPC分类号： H01S5/028 , H01S5/024 , H01L21/02
CPC分类号： H01S5/125 , H01S5/0265 , H01S5/0267 , H01S5/187 , H01S5/2081
摘要： In order to provide a semiconductor laser element or an integrated optical device with high reliability, a horizontal-cavity semiconductor laser or an optical module includes a deeply dug DBR mirror serving as a cavity mirror, the deeply dug DBR mirror being composed of a material that is lattice-matched to a substrate and that has a band gap energy that does not absorb light emitted from an active layer.
摘要翻译：为了提供具有高可靠性的半导体激光元件或集成光学器件，水平腔半导体激光器或光学模块包括用作腔镜的深钻DBR镜，深冲DBR镜由以下材料组成的材料组成：与衬底晶格匹配，并且具有不吸收从有源层发射的光的带隙能量。

6. 发明授权

US07329894B2 Semiconductor laser device and semiconductor optical modulator 有权
标题翻译：半导体激光器件和半导体光调制器
公开(公告)号：US07329894B2
公开(公告)日：2008-02-12
申请号：US11202285
申请日：2005-08-12
申请人： Takeshi Kitatani , Masahiro Aoki , Tomonobu Tsuchiya
发明人： Takeshi Kitatani , Masahiro Aoki , Tomonobu Tsuchiya
IPC分类号： H01L29/02 , H01L47/00
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/2009 , H01S5/3213 , H01S5/3216 , H01S5/34306 , H01S5/34366 , H01S2304/04
摘要： Since the semiconductor devices including a stacked structure of group-III-V alloy semiconductor layers different in the kind of group-V constituent atom form the so-called band line-up of type II, band discontinuity in the heterostructure has impeded smooth transport of carriers and deteriorated device characteristics.According to the present invention, an energy band structure that makes it possible, in one energy band (e.g., a valence band), to smoothly transport carriers of one of two kinds (e.g., holes) by connecting energy discontinuity in an inclined form or stepwise, and at the same, in the other energy band (e.g., a conduction band), to maintain a barrier effect for carriers of the other kind (e.g., electrons) by retaining energy discontinuity, can be realized for improved transport characteristics of carriers at the heterointerface forming the band line-up of type II.
摘要翻译：由于包含V族构成原子的种类不同的III-V族合金半导体层的叠层结构的半导体器件形成II型所谓的带阵列，所以异质结构中的带状不连续性阻碍了载体和劣化的器件特性。根据本发明，能量带结构在一个能带（例如价带）中可以通过以倾斜的形式连接能量不连续来平稳地输送两种（例如，孔）中的一种的载体，并且在另一个能带（例如，导带）中，通过保持能量不连续性来维持另一种载流子（例如电子）的阻挡效应，可以实现用于改善载流子的运输特性在形成II型频带阵列的异质界面处。

7. 发明申请

US20060237710A1 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US20060237710A1
公开(公告)日：2006-10-26
申请号：US11202285
申请日：2005-08-12
申请人： Takeshi Kitatani , Masahiro Aoki , Tomonobu Tsuchiya
发明人： Takeshi Kitatani , Masahiro Aoki , Tomonobu Tsuchiya
IPC分类号： H01L29/06
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/2009 , H01S5/3213 , H01S5/3216 , H01S5/34306 , H01S5/34366 , H01S2304/04
摘要： Since the semiconductor devices including a stacked structure of group-III-V alloy semiconductor layers different in the kind of group-V constituent atom form the so-called band line-up of type II, band discontinuity in the heterostructure has impeded smooth transport of carriers and deteriorated device characteristics. According to the present invention, an energy band structure that makes it possible, in one energy band (e.g., a valence band), to smoothly transport carriers of one of two kinds (e.g., holes) by connecting energy discontinuity in an inclined form or stepwise, and at the same, in the other energy band (e.g., a conduction band), to maintain a barrier effect for carriers of the other kind (e.g., electrons) by retaining energy discontinuity, can be realized for improved transport characteristics of carriers at the heterointerface forming the band line-up of type II.
摘要翻译：由于包含V族构成原子的种类不同的III-V族合金半导体层的叠层结构的半导体器件形成II型所谓的带阵列，所以异质结构中的带状不连续性阻碍了载体和劣化的器件特性。根据本发明，能量带结构在一个能带（例如价带）中可以通过以倾斜的形式连接能量不连续来平稳地输送两种（例如，孔）中的一种的载体，并且在另一个能带（例如，导带）中，通过保持能量不连续性来维持另一种载流子（例如电子）的阻挡效应，可以实现用于改善载流子的运输特性在形成II型频带阵列的异质界面处。

8. 发明授权

US06821801B1 Manufacturing method of semiconductor laser diode 有权
标题翻译：半导体激光二极管的制造方法
公开(公告)号：US06821801B1
公开(公告)日：2004-11-23
申请号：US10777071
申请日：2004-02-13
申请人： Hiroshi Sato , Tomonobu Tsuchiya , Masahiro Aoki , Takeshi Kitatani , Noritsugu Takahashi
发明人： Hiroshi Sato , Tomonobu Tsuchiya , Masahiro Aoki , Takeshi Kitatani , Noritsugu Takahashi
IPC分类号： H01L2100
CPC分类号： B82Y20/00 , H01L31/1075 , H01S5/026 , H01S5/028 , H01S5/0425 , H01S5/1014 , H01S5/1228 , H01S5/2201 , H01S5/222 , H01S5/2223 , H01S5/2224 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/3211 , H01S5/34306 , H01S5/3436 , H01S2304/04
摘要： The invention provides a manufacturing method of a laser diode having buried grown layer with less crystal defects and with low consumption power and having high reliability in a buried heterostructure laser diode using an InGaAlAs type material as an active layer, by preventing the inhibition of burying and regrowing of the active layer caused by oxidation of Al contained in the active layer. A manufacturing method of a semiconductor laser diode and the active layer comprises a material at least containing Al and having a buried hetero-cross sectional structure, formation of the buried heterostructure, comprising the steps of fabricating the active layer into a stripe shape or mesa shape by etching including at least wet etching, cleaning the stripe-shape sidewall of the core layer with a gas containing chlorine or other halogen element in a crystal growing apparatus and burying the active layer in the semiconductor.
摘要翻译：本发明提供了一种激光二极管的制造方法，其具有埋入生长层，其具有较少的晶体缺陷和低功耗，并且在使用InGaAlAs型材料作为有源层的掩埋异质结构激光二极管中具有高可靠性，通过防止掩埋和一种半导体激光二极管和有源层的制造方法，包括至少包含Al并具有埋入异质截面结构的材料，形成埋入异质结构包括以下步骤：通过至少包括湿法蚀刻的蚀刻将活性层制成条形或台面形状，在晶体生长装置中用含氯或其它卤素元素的气体清洗芯层的条状侧壁，并将其埋入半导体中的有源层。

9. 发明授权

US08755423B2 Surface emitting laser module and vertical illuminated photodiode module 失效
标题翻译：表面发射激光模块和垂直照明光电二极管模块
公开(公告)号：US08755423B2
公开(公告)日：2014-06-17
申请号：US12759024
申请日：2010-04-13
申请人： Koichiro Adachi , Yasunobu Matsuoka , Toshiki Sugawara , Masahiro Aoki
发明人： Koichiro Adachi , Yasunobu Matsuoka , Toshiki Sugawara , Masahiro Aoki
IPC分类号： H01S5/00
CPC分类号： H01S5/18 , G02B6/322 , G02B6/4214 , G02B6/423 , H01S5/0207 , H01S5/02212 , H01S5/02284 , H01S5/0267 , H01S5/12 , H01S5/18311
摘要： In order to provide a compact optical module permitting highly efficient optical coupling and having components thereof highly densely packaged, a light emitting diode that is included in the optical module and emits light in a vertical direction with respect to a principal surface of a semiconductor substrate is provided with a lens integrated into a light emitting region, and a retaining section integrated to surround the light emitting region. Accordingly, readiness in alignment of the light emitting diode and an optical fiber, which guides light emitted from the light emitting diode, with each other is upgraded. Eventually, the compact optical module permitting highly efficient optical coupling and having components thereof highly densely packaged can be provided.
摘要翻译：为了提供一种紧凑的光学模块，其允许高效光耦合并且具有高密度封装的部件，包括在光学模块中并相对于半导体衬底的主表面沿垂直方向发光的发光二极管是设置有集成到发光区域中的透镜，以及整合在围绕发光区域的保持部分。因此，升级了将发光二极管发出的光引导的发光二极管与光纤对准的准备状态。最终，可以提供允许高效光耦合并且具有高密度封装的部件的紧凑型光学模块。

10. 发明授权

US08449160B2 Multi-wavelength light emitting device 有权
标题翻译：多波长发光装置
公开(公告)号：US08449160B2
公开(公告)日：2013-05-28
申请号：US12849352
申请日：2010-08-03
申请人： Kenichi Tanaka , Masahiro Aoki , Tsukuru Ohtoshi
发明人： Kenichi Tanaka , Masahiro Aoki , Tsukuru Ohtoshi
IPC分类号： F21V7/04
CPC分类号： G02B6/4204 , G02B27/0994 , G02B27/1006 , G02B27/104 , G02B27/123 , H01S5/02212 , H01S5/02284 , H01S5/4012 , H01S5/4093 , H04N9/3129 , H04N9/3161
摘要： A multi-wavelength light emitting device includes the following three sections; a light source section having multiple luminous points that emit multiple light beams, a condenser lens section that concentrates the light beams emitted from the luminous points, and a light guide section that propagates superposedly and mixedly the light beams concentrated by the condenser lens section after emission thereof from the luminous points.
摘要翻译：多波长发光器件包括以下三个部分; 具有发射多个光束的多个发光点的光源部分，聚集从发光点发射的光束的聚光透镜部分和在发射之后叠加并混合由聚光透镜部分聚集的光束的导光部分来自发光点。

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