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    • 5. 发明申请
    • Plasma processing method and plasma processing apparatus
    • 等离子体处理方法和等离子体处理装置
    • US20070077737A1
    • 2007-04-05
    • US10580036
    • 2004-11-19
    • Yasuo KobayashiKohei Kawamura
    • Yasuo KobayashiKohei Kawamura
    • H01L21/26H01L21/42H05H1/24
    • C23C16/511C23C16/26C23C16/4404C23C16/4405H01J37/32192H01J37/3222H01J37/32238H01J37/3244
    • A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.
    • 通过电介质板(6)将微波从天线(7)的平面天线部件辐射到处理室(1)中。 由此,从气体供给构件(3)供给到处理室(1)中的C 5 C 8 C 8气体被变更(激活)为等离子体,从而 在半导体晶片(W)上形成一定厚度的含氟碳膜。 每次进行在一个晶片上形成膜的成膜工艺时,进行清洗处理和预涂工序。 在清洁过程中,用氧气和氢气的等离子体清洁处理室的内部。 在预涂布过程中,将C 5 F 8 N气体变成等离子体,并且含氟碳的预涂膜比含氟 形成在成膜工艺中形成的碳膜。
    • 8. 发明授权
    • Plasma processing method and plasma processing apparatus
    • 等离子体处理方法和等离子体处理装置
    • US08017197B2
    • 2011-09-13
    • US10580036
    • 2004-11-19
    • Yasuo KobayashiKohei Kawamura
    • Yasuo KobayashiKohei Kawamura
    • H05H1/24C23C14/02C23C16/00C23F1/00
    • C23C16/511C23C16/26C23C16/4404C23C16/4405H01J37/32192H01J37/3222H01J37/32238H01J37/3244
    • A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.
    • 通过电介质板(6)将微波从天线(7)的平面天线部件辐射到处理室(1)中。 由此,将从气体供给部件(3)供给到处理室(1)的C5F8气体变更(激活)为等离子体,以在半导体晶片(W)上形成一定厚度的含氟碳膜 )。 每次进行在一个晶片上形成膜的成膜工艺时,进行清洗处理和预涂工序。 在清洁过程中,用氧气和氢气的等离子体清洁处理室的内部。 在预涂工序中,将C5F8气体变成等离子体,形成比成膜工序中形成的含氟碳膜薄的含氟碳的预涂膜。