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1. 发明申请

US20090032950A1 FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, PROGRAM AND RECORDING MEDIUM 有权
标题翻译：薄膜成型方法，半导体器件制造方法，半导体器件，程序和记录介质
公开(公告)号：US20090032950A1
公开(公告)日：2009-02-05
申请号：US11718100
申请日：2005-10-03
申请人： Yasuhiko Kojima , Naoki Yoshii
发明人： Yasuhiko Kojima , Naoki Yoshii
IPC分类号： H01L23/52 , B05D1/36 , B05D5/00 , C23C16/04 , C23C16/06 , H01L21/44
CPC分类号： H01L21/76877 , C23C16/0272 , H01L21/28556 , H01L21/28562 , H01L21/76846
摘要： An adhesion between a Cu diffusion barrier film and a Cu wiring in a semiconductor device is improved and reliability of the semiconductor device is improved. A film forming method for forming a Cu film on a substrate to be processed is provided with a first process of forming an adhesion film on the Cu diffusion barrier film formed on the substrate to be processed, and a second process of forming a Cu film on the adhesion film. The adhesion film includes Pd.
摘要翻译：半导体器件中的Cu扩散阻挡膜和Cu布线之间的粘附性得到改善，并且提高了半导体器件的可靠性。在被处理基板上形成Cu膜的成膜方法设置有在形成在待加工基板上的Cu扩散阻挡膜上形成粘合膜的第一工序，以及将Cu膜形成第二工序粘附膜。附着膜包括Pd。

2. 发明申请

US20060068104A1 Thin-film formation in semiconductor device fabrication process and film deposition apparatus 审中-公开
标题翻译：半导体器件制造工艺中的薄膜形成和成膜装置
公开(公告)号：US20060068104A1
公开(公告)日：2006-03-30
申请号：US11231962
申请日：2005-09-22
申请人： Tadahiro Ishizaka , Yasuhiro Oshima , Naoki Yoshii , Takashi Shigeoka , Kohei Kawamura , Yukio Fukuda , Yasuhiko Kojima
发明人： Tadahiro Ishizaka , Yasuhiro Oshima , Naoki Yoshii , Takashi Shigeoka , Kohei Kawamura , Yukio Fukuda , Yasuhiko Kojima
IPC分类号： C23C16/00
CPC分类号： C23C16/34 , C23C16/45529 , C23C16/45542 , H01L21/28562 , H01L21/76846 , H01L21/7685 , H01L2221/1078
摘要： A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, (a) a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber, and (b) a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber, are repeated a predetermined number of times. In the second film formation process, (c) a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber, and (d) a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber, are repeated a predetermined number of times.
摘要翻译：用于在处理室中在基板上形成膜的膜制造方法包括第一成膜工艺和第二成膜工艺。在第一成膜方法中，（a）第一步骤，将含有金属 - 有机化合物的第一源气体不含卤素元素供应到室中，然后从室除去第一源气体，和（b）将包含氢或氢化合物的第二源气体供应到室中，然后从室除去第二源气体的第二步骤重复预定次数。在第二成膜方法中，（c）第三步骤，将含有金属卤化物的第三源气体供应到室中，然后从室中除去第三气体，以及（d）第四步骤，将包含氢或氢化合物的第四源气体进入室，然后从室除去第四源气体，重复预定次数。

3. 发明授权

US08721846B2 Method of forming film, film forming apparatus and storage medium 有权
标题翻译：成膜方法，成膜装置和储存介质
公开(公告)号：US08721846B2
公开(公告)日：2014-05-13
申请号：US11720461
申请日：2005-11-29
申请人： Naoki Yoshii , Yasuhiko Kojima
发明人： Naoki Yoshii , Yasuhiko Kojima
IPC分类号： C23C14/00 , C23C14/32 , C25B9/00 , C25B11/00 , C25B13/00 , H01L21/44 , C23C14/16 , C23C10/06 , C23C14/14 , C23C26/00 , H01L21/285 , H01L21/768 , H01J37/34 , C23C14/34 , C23C10/02
CPC分类号： C23C14/165 , C23C10/02 , C23C10/06 , C23C14/0057 , C23C14/14 , C23C14/345 , C23C26/00 , H01J37/34 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76856 , H01L21/76873
摘要： A film forming method includes mounting a substrate on a mounting member after loading the substrate into a reaction chamber, adsorbing a compound of a first metal on a surface of the substrate by supplying a source gas containing the compound of the first metal into the reaction chamber, reducing the compound of the first metal adsorbed on the substrate by making a reducing gas contact therewith to thereby obtain a first metal layer, and alloying the first metal and a second metal to obtain an alloy layer of the first metal and the second metal by injecting the second metal into the first metal layer. The second metal is ejected from a target electrode facing the substrate by making a sputtering plasma contact with the target electrode, and at least a surface of the target electrode is formed of the second metal different from the first metal.
摘要翻译：一种成膜方法，包括：在将基板装载到反应室中之后，将基板安装在安装构件上，通过将含有第一金属的化合物的源气体供应到反应室中，将基板的表面上的第一金属的化合物吸附在基板的表面上通过使还原气体与其接触来还原吸附在基板上的第一金属的化合物，从而获得第一金属层，并且使第一金属和第二金属合金化，以通过以下方式获得第一金属和第二金属的合金层：将第二金属注入第一金属层。通过与目标电极进行溅射等离子体接触，第二金属从面向基板的靶电极喷出，目标电极的至少表面由与第一金属不同的第二金属形成。

4. 发明申请

US20070004186A1 Film forming method 审中-公开
标题翻译：成膜方法
公开(公告)号：US20070004186A1
公开(公告)日：2007-01-04
申请号：US11514919
申请日：2006-09-05
申请人： Naoki Yoshii , Yasuhiko Kojima
发明人： Naoki Yoshii , Yasuhiko Kojima
IPC分类号： H01L21/00 , G06F19/00 , C23C16/00 , H01L21/20
CPC分类号： H01L21/76841 , C23C16/45542 , C23C16/515 , H01L21/28562
摘要： A film forming method is provided for forming a thin film including a metal on a substrate by alternately supplying the substrate with a film forming material including the metal and a reducing gas. At least a part of the film forming material is dissociated or decomposed in vapor phase by plasma and supplied onto the substrate.
摘要翻译：提供了一种成膜方法，用于通过交替地向衬底提供包括金属和还原气体的成膜材料来在衬底上形成包括金属的薄膜。至少一部分成膜材料通过等离子体在气相中解离或分解并供给到基底上。

5. 发明授权

US08822263B2 Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device 有权
标题翻译：氧化锌基半导体层的外延生长方法，外延晶体结构，外延晶体生长装置和半导体器件
公开(公告)号：US08822263B2
公开(公告)日：2014-09-02
申请号：US12493765
申请日：2009-06-29
申请人： Akinori Koukitu , Yoshinao Kumagai , Tetsuo Fujii , Naoki Yoshii
发明人： Akinori Koukitu , Yoshinao Kumagai , Tetsuo Fujii , Naoki Yoshii
IPC分类号： H04L21/00
CPC分类号： C23C16/407 , C23C16/0272 , C30B25/183 , C30B25/20 , C30B29/16 , H01L21/0237 , H01L21/0242 , H01L21/02472 , H01L21/02483 , H01L21/02554 , H01L21/0262 , H01L21/02634 , H01L29/22
摘要： It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate.
摘要翻译：提供了异质外延生长方法，异质外延晶体结构，异质外延生长装置和半导体器件，该方法包括形成由氧化物的取向膜形成的缓冲层或在异质外延生长方法上的氮化物取向膜基质; 并且使用卤化II族金属和氧材料在缓冲层上进行氧化锌基半导体层的晶体生长。提供同质外延生长方法，同质外延晶体结构，同质外延生长装置和半导体器件，同质外延生长方法包括将含有锌的气体和含氧气体的反应气体引入到氧化锌衬底上; 并且在氧化锌衬底上进行氧化锌基半导体层的晶体生长。

6. 发明申请

US20090145744A1 Method of Forming Film, Film Forming Apparatus and Storage Medium 有权
标题翻译：成膜方法，成膜装置和储存介质
公开(公告)号：US20090145744A1
公开(公告)日：2009-06-11
申请号：US11720461
申请日：2005-11-29
申请人： Naoki Yoshii , Yasuhiko Kojima
发明人： Naoki Yoshii , Yasuhiko Kojima
IPC分类号： C23C14/38
CPC分类号： C23C14/165 , C23C10/02 , C23C10/06 , C23C14/0057 , C23C14/14 , C23C14/345 , C23C26/00 , H01J37/34 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76856 , H01L21/76873
摘要： Even in the application of a highly cohesive metal to a surface of treatment object having recesses of high aspect ratio, a continuous thin-film can be formed. There is provided a method of forming a film, comprising the step of carrying a substrate in a reaction chamber and mounting the same, the step of feeding a raw gas containing a compound of a first metal into the reaction chamber to thereby cause the surface of the substrate to adsorb the compound of the first metal, the step of bringing the compound the first metal into contact with a reducing plasma resulting from activation of a reducing gas to thereby obtain a first metal layer and the step of bringing a target electrode whose at least surface portion consists of a second metal different from the first metal into contact with a sputtering plasma and incorporating the thus ejected second metal into the first metal layer to thereby obtain an alloy layer, wherein this sequence of adsorption, reduction and alloy formation steps is carried out one or more times. By virtue of this method even when the cohesive force of the first metal is large, any migration thereof on the substrate is suppressed to thereby realize formation of a continuous thin film of small thickness.
摘要翻译：即使在将高粘结性金属施加到具有高纵横比的凹槽的处理对象的表面上，也可以形成连续的薄膜。提供了一种形成膜的方法，包括在反应室中载置基板并安装其的步骤，将含有第一金属化合物的原料气体进料到反应室中，从而使表面用于吸附第一金属的化合物的基板，使第一金属与由还原气体的活化引起的还原性等离子体接触从而获得第一金属层的步骤，以及使目标电极的最小表面部分由不同于第一金属的第二金属组成，与溅射等离子体接触并将由此喷出的第二金属合并到第一金属层中，从而获得合金层，其中吸附，还原和合金形成步骤的顺序为进行一次或多次。通过该方法，即使第一金属的内聚力大，也能抑制基板上的迁移，从而形成厚度薄的连续薄膜。

7. 发明授权

US08211500B2 Copper film deposition method 有权
标题翻译：铜膜沉积法
公开(公告)号：US08211500B2
公开(公告)日：2012-07-03
申请号：US10591476
申请日：2005-02-25
申请人： Yasuhiko Kojima , Naoki Yoshii
发明人： Yasuhiko Kojima , Naoki Yoshii
IPC分类号： C23C16/00
CPC分类号： H01L21/28562 , C23C16/18 , C23C16/452 , C23C16/45529 , C23C16/45553
摘要： A Cu film is deposited on a substrate by ALD (Atomic Layer Deposition) process, in which: a Cu-carboxyl acid complex or a derivative thereof having a high vapor pressure and wettability to a base is used in a gasified state; H2 is used as a reductive gas; and a step of adsorbing a source material gas to a substrate and a step of forming a Cu film by reducing the adsorbed gas with a reductive gas are repeated alternately. With this method, a conformal Cu film having excellent quality can be formed.
摘要翻译：通过ALD（原子层沉积）方法将Cu膜沉积在基板上，其中：在气化状态下使用具有高蒸气压和对碱的润湿性的Cu-羧酸络合物或其衍生物; H2用作还原气体; 并且将源材料气体吸附到基板的步骤和通过用还原气体还原吸附气体形成Cu膜的步骤交替地重复。通过这种方法，可以形成具有优良品质的共形Cu膜。

8. 发明授权

US07887670B2 Gas introducing mechanism and processing apparatus for processing object to be processed 有权
标题翻译：用于处理待处理物体的气体引入机构和处理装置
公开(公告)号：US07887670B2
公开(公告)日：2011-02-15
申请号：US11984843
申请日：2007-11-21
申请人： Kenjiro Koizumi , Naoki Yoshii
发明人： Kenjiro Koizumi , Naoki Yoshii
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/45574 , C23C16/45589
摘要： The present invention provides a gas introducing mechanism and a processing apparatus for processing an object to be processed, which can supply a gas uniformly over the whole region of a processing space so as to enhance uniformity of a process in the surface of the object to be processed. The gas introducing mechanism 50, which is adapted to provide a process to the object W to be processed, by using the gas, in a processing vessel 4, includes a gas introducing ring member 54 for introducing the gas from the exterior of the processing vessel 4, a disk-like rotary base 56 provided rotatably below a top plate 48 in the processing vessel 4, and a ring-shaped gas injection ring member 60 provided around a rotary base 56 so as to be closer and opposed to the gas introducing ring member 54. A gas injecting slit 58 is provided in the ring-shaped gas injection ring member 60, the slit 58 being formed along the circumferential direction of the rotary base. A ring-shaped gas guide groove 62 is provided on at least either one of opposing side faces of the gas introducing ring member 54 and gas injection ring member 60, along the circumferential direction, corresponding to a gas introducing port.
摘要翻译：本发明提供一种气体导入机构和处理对象物的处理装置，其能够在处理空间的整个区域均匀地供给气体，以提高被处理物的表面的处理的均匀性。处理。气体引入机构50适于通过使用气体在处理容器4中向待处理对象物W提供处理，该气体引入机构50包括用于将来自处理容器外部的气体引入的气体导入环构件54 如图4所示，可旋转地设置在处理容器4中的顶板48的下方的盘状旋转底座56，以及设置在旋转底座56周围以与气体导入环更靠近并相对的环状气体注入环构件60 在环形气体注入环构件60中设置有气体注入狭缝58，沿着旋转底座的圆周方向形成狭缝58。在气体导入环构件54和气体注入环构件60的与气体导入口对应的圆周方向的相对侧面的至少任一侧上设置环状导气槽62。

9. 发明授权

US07699945B2 Substrate treatment method and film forming method, film forming apparatus, and computer program 失效
标题翻译：基板处理方法和成膜方法，成膜装置和计算机程序
公开(公告)号：US07699945B2
公开(公告)日：2010-04-20
申请号：US11859490
申请日：2007-09-21
申请人： Naoki Yoshii , Koumei Matsuzawa , Yasuhiko Kojima
发明人： Naoki Yoshii , Koumei Matsuzawa , Yasuhiko Kojima
IPC分类号： C21D1/00 , H01L21/44
CPC分类号： H01L21/76846 , C23C16/0209 , C23C16/0281 , C23C16/18 , H01L21/28556 , H01L21/76838 , H01L21/76864
摘要： There is provided a substrate treatment method performed on a substrate before forming a Cu film on a surface of a base material of the substrate. In the substrate treatment method, a substrate on which a Cu film is to be formed is prepared; and a specific treatment is performed on the substrate so that a crystalline orientation of the surface of the base material of the substrate has a small lattice mismatch with the Cu film.
摘要翻译：在基板的基材的表面上形成Cu膜之前，在基板上进行基板处理方法。在基板处理方法中，准备要形成Cu膜的基板; 对基板进行特定的处理，使得基板的基材表面的结晶取向与Cu膜的晶格失配小。

10. 发明申请

US20080178810A1 Gas introducing mechanism and processing apparatus for processing object to be processed 有权
标题翻译：用于处理待处理物体的气体引入机构和处理装置
公开(公告)号：US20080178810A1
公开(公告)日：2008-07-31
申请号：US11984843
申请日：2007-11-21
申请人： Kenjiro Koizumi , Naoki Yoshii
发明人： Kenjiro Koizumi , Naoki Yoshii
IPC分类号： C23C16/00
CPC分类号： C23C16/45574 , C23C16/45589
摘要： The present invention provides a gas introducing mechanism and a processing apparatus for processing an object to be processed, which can supply a gas uniformly over the whole region of a processing space so as to enhance uniformity of a process in the surface of the object to be processed. The gas introducing mechanism 50, which is adapted to provide a process to the object W to be processed, by using the gas, in a processing vessel 4, includes a gas introducing ring member 54 for introducing the gas from the exterior of the processing vessel 4, a disk-like rotary base 56 provided rotatably below a top plate 48 in the processing vessel 4, and a ring-shaped gas injection ring member 60 provided around a rotary base 56 so as to be closer and opposed to the gas introducing ring member 54. A gas injecting slit 58 is provided in the ring-shaped gas injection ring member 60, the slit 58 being formed along the circumferential direction of the rotary base. A ring-shaped gas guide groove 62 is provided on at least either one of opposing side faces of the gas introducing ring member 54 and gas injection ring member 60, along the circumferential direction, corresponding to a gas introducing port.
摘要翻译：本发明提供一种气体导入机构和处理对象物的处理装置，其能够在处理空间的整个区域均匀地供给气体，以提高被处理物的表面的处理的均匀性。处理。气体引入机构50适于通过使用气体在处理容器4中向待处理对象物W提供处理，该气体引入机构50包括用于将来自处理容器外部的气体引入的气体导入环构件54 如图4所示，可旋转地设置在处理容器4中的顶板48的下方的盘状旋转底座56，以及设置在旋转底座56周围以与气体导入环更靠近并相对的环状气体注入环构件60 在环形气体注入环构件60中设置有气体注入狭缝58，沿着旋转底座的圆周方向形成狭缝58。在气体导入环构件54和气体注入环构件60的与气体导入口对应的圆周方向的相对侧面的至少任一侧上设置环状导气槽62。

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