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1. 发明授权

US06992910B1 Magnetic random access memory with three or more stacked toggle memory cells and method for writing a selected cell 有权
标题翻译：具有三个或更多个堆叠式触发存储器单元的磁性随机存取存储器以及用于写入所选单元的方法
公开(公告)号：US06992910B1
公开(公告)日：2006-01-31
申请号：US11185331
申请日：2005-07-20
申请人： Kochan Ju , Oletta Allegranza
发明人： Kochan Ju , Oletta Allegranza
IPC分类号： G11C7/00
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/226
摘要： A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each memory stack is located at an intersection region between two orthogonal write lines. Each cell in the stack is a “toggle” cell that has its synthetic antiferromagnet (SAF) free layer easy axis of magnetization aligned nonparallel with the X and Y axes and angularly spaced about the Z axis from the easy axes of magnetization of all the other SAF free layers in the stack. Each cell in a stack is magnetically separated from adjacent cells in the stack by a nonmagnetic separation layer. The magnetization direction of the free layer in a selected memory cell in a stack can be switched without switching the magnetization directions of the free layers in the other memory cells in the stack.
摘要翻译： “切换”型磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储堆栈具有沿着Z轴堆叠的多个触发存储器单元。每个存储器堆栈位于两个正交写入线之间的交叉区域。堆叠中的每个单元是具有其合成反铁磁体（SAF）自由层的容易的磁化轴与“X”和“Y”轴线不平行的“切换”单元，并且与所有其它的容易的磁化轴围绕Z轴成角度地间隔开堆栈中的SAF自由层。堆叠中的每个电池通过非磁性分离层与堆叠中的相邻电池磁分离。可以切换堆叠中的选定存储单元中的自由层的磁化方向，而不切换堆叠中的其他存储单元中的自由层的磁化方向。

2. 发明授权

US06937497B1 Magnetic random access memory with stacked toggle memory cells 有权
标题翻译：带随机存取存储单元的磁性随机存取存储器
公开(公告)号：US06937497B1
公开(公告)日：2005-08-30
申请号：US10991993
申请日：2004-11-18
申请人： Kochan Ju , Oletta Allegranza
发明人： Kochan Ju , Oletta Allegranza
IPC分类号： G11C11/15 , G11C11/16
CPC分类号： G11C11/16
摘要： A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each memory stack is located at an intersection region between two orthogonal write lines. Each cell in the stack is a “toggle” cell that has its synthetic antiferromagnet (SAF) free layer easy axis of magnetization aligned nonparallel with the X and Y axes and angularly spaced about the Z axis from the easy axes of magnetization of all the other SAF free layers in the stack. Each cell in a stack is magnetically separated from adjacent cells in the stack by a nonmagnetic separation layer. The magnetization direction of the free layer in a selected memory cell in a stack can be switched without switching the magnetization directions of the free layers in the other memory cells in the stack.
摘要翻译： “切换”型磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储堆栈具有沿着Z轴堆叠的多个触发存储器单元。每个存储器堆栈位于两个正交写入线之间的交叉区域。堆叠中的每个单元是具有其合成反铁磁体（SAF）自由层的容易的磁化轴与“X”和“Y”轴线不平行的“切换”单元，并且与所有其它的容易的磁化轴围绕Z轴成角度地间隔开堆栈中的SAF自由层。堆叠中的每个电池通过非磁性分离层与堆叠中的相邻电池磁分离。可以切换堆叠中的选定存储单元中的自由层的磁化方向，而不切换堆叠中的其他存储单元中的自由层的磁化方向。

3. 发明授权

US07279269B2 CPP head with parasitic shunting reduction 有权
标题翻译： CPP头与寄生分流减少
公开(公告)号：US07279269B2
公开(公告)日：2007-10-09
申请号：US10734422
申请日：2003-12-12
申请人： Jeiwei Chang , Stuart Kao , Chao Peng Chen , Chunping Luo , Kochan Ju , Min Li
发明人： Jeiwei Chang , Stuart Kao , Chao Peng Chen , Chunping Luo , Kochan Ju , Min Li
IPC分类号： G11B5/39
CPC分类号： G11B5/3163 , G11B5/398 , Y10T428/1171
摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.
摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部部分精确地集中在其上。

4. 发明授权

US07262941B2 FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures 失效
标题翻译： FeTa纳米氧化物层作为覆盖层，用于增强底部自旋阀结构中的巨磁阻
公开(公告)号：US07262941B2
公开(公告)日：2007-08-28
申请号：US10856180
申请日：2004-05-28
申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
发明人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
IPC分类号： G11B5/39
CPC分类号： C22C38/10 , B32B15/01 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C22C38/12 , G01R33/093 , G11B5/3163 , G11B5/3903 , H01F10/3259 , H01F10/3272 , H01F41/302 , H01L43/08 , H01L43/12 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： An NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer. As a result of their structure and the method of their fabrication, these elements have higher GMR ratios and lower resistances than elements of the prior art.
摘要翻译：一种具有合成反铁磁性钉扎（SyAP）层的NiCr种子层底部自旋阀传感器元件和包括单个镜面反射纳米氧化物层（NOL）或包含非金属层的双层和镜面反射纳米氧化物层反射纳米氧化层。由于它们的结构及其制造方法的结果，这些元件具有比现有技术的元件更高的GMR比和更低的电阻。

5. 发明申请

US20070041124A1 Narrow track CPP head with bias cancellation 有权
标题翻译：窄轨CPP头偏置消除
公开(公告)号：US20070041124A1
公开(公告)日：2007-02-22
申请号：US11588564
申请日：2006-10-27
申请人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
发明人： Jei-Wei Chang , Koichi Terunuma , Youfeng Zheng , Kochan Ju
IPC分类号： G11B5/09
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.
摘要翻译：通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题，以确保通过器件的电流仅流过其中心区域，从而最小化其边缘读取灵敏度。

6. 发明授权

US07180712B1 Shield structure design to improve the stability of an MR head 有权
标题翻译：盾构结构设计提高MR头的稳定性
公开(公告)号：US07180712B1
公开(公告)日：2007-02-20
申请号：US09513873
申请日：2000-02-28
申请人： Min Li , Simon H. Liao , Cheng T. Horng , Kochan Ju
发明人： Min Li , Simon H. Liao , Cheng T. Horng , Kochan Ju
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/112 , G11B5/3912 , H01L43/08
摘要： A method for forming a laminated shield to improve the stability and performance of an MR read head and the MR read head formed using that shield. The shield consists of two layers of ferromagnetic material separated by a layer of ruthenium, allowing the ferromagnetic layers to form an antiferromagnetic configuration by means of a quantum mechanical exchange interaction. The antiferromagnetic configuration has a stable domain structure and a magnetization that forms closed loops around the shield edges thereby reducing noise in the readback signal and reducing disturbances to the magnetic state of the sensor element.
摘要翻译：一种用于形成层叠屏蔽以提高使用该屏蔽形成的MR读取头和MR读取头的稳定性和性能的方法。屏蔽由两层铁磁材料组成，由一层钌分离，允许铁磁层通过量子力学交换相互作用形成反铁磁性结构。反铁磁构造具有稳定的畴结构和磁化，其在屏蔽边缘周围形成闭环，从而降低回读信号中的噪声并减少对传感器元件的磁状态的干扰。

7. 发明授权

US07173848B2 Magnetic random access memory with memory cell stacks having more than two magnetic states 有权
标题翻译：具有多于两个磁状态的存储单元堆的磁性随机存取存储器
公开(公告)号：US07173848B2
公开(公告)日：2007-02-06
申请号：US11048377
申请日：2005-02-01
申请人： Kochan Ju
发明人： Kochan Ju
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , G11C11/5607
摘要： A magnetic random access memory (MRAM) has memory units or stacks of multiple memory cells arranged in the X-Y plane on the MRAM substrate with each memory unit having four possible magnetic states. Each memory unit is located at an intersection region between two orthogonal write lines and has two stacked memory cells. The two cells are magnetically separated from each other by a separation layer and have the easy axes of magnetization of their free ferromagnetic layers aligned substantially orthogonal to one another. The application of write-current pulses of equal magnitude and the appropriate direction through the orthogonal write lines above and below the memory units can generate each of the four magnetic states which can be detected as four independent logical states.
摘要翻译：磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的多个存储单元的存储器单元或堆叠，每个存储器单元具有四个可能的磁状态。每个存储器单元位于两个正交写入线之间的交叉区域，并且具有两个堆叠的存储器单元。两个电池通过分离层彼此磁性分离，并且其自由铁磁层的易磁化轴基本上彼此正交排列。通过在存储器单元上方和下方的正交写入线，施加相等幅度的写入电流脉冲和适当的方向，可以产生可以被检测为四个独立逻辑状态的四个磁状态中的每一个。

8. 发明授权

US07118680B2 Self-alignment scheme for enhancement of CPP-GMR 失效
标题翻译：用于增强CPP-GMR的自对准方案
公开(公告)号：US07118680B2
公开(公告)日：2006-10-10
申请号：US10718372
申请日：2003-11-20
申请人： Jei-Wei Chang , Chao-Peng Chen , Min Li , Kochan Ju
发明人： Jei-Wei Chang , Chao-Peng Chen , Min Li , Kochan Ju
IPC分类号： G11B5/39
CPC分类号： G11B5/1278 , Y10T29/49052
摘要： A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.
摘要翻译：提供了一种用于制造合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器的方法，该方法包括采用初级和次级电子吸收的电子束光刻工艺，第一和第二用于对封装的铁磁自由层和导电的非磁性间隔层进行图案化的自对准剥离工艺。所制造的传感器具有降低的电阻和增加的灵敏度。

9. 发明授权

US07111386B2 Lead plating method for GMR head manufacture 失效
公开(公告)号：US07111386B2
公开(公告)日：2006-09-26
申请号：US11266418
申请日：2005-11-03
申请人： Chao-Peng Chen , Kevin Lin , Jei-Wei Chang , Kochan Ju , Hui-Chuan Wang
发明人： Chao-Peng Chen , Kevin Lin , Jei-Wei Chang , Kochan Ju , Hui-Chuan Wang
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , Y10T29/49021 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49128
摘要： A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.

10. 发明申请

US20060171199A1 Magnetic random access memory with memory cell stacks having more than two magnetic states 有权
标题翻译：具有多于两个磁状态的存储单元堆的磁性随机存取存储器
公开(公告)号：US20060171199A1
公开(公告)日：2006-08-03
申请号：US11048377
申请日：2005-02-01
申请人： Kochan Ju
发明人： Kochan Ju
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C11/5607
摘要： A magnetic random access memory (MRAM) has memory units or stacks of multiple memory cells arranged in the X-Y plane on the MRAM substrate with each memory unit having four possible magnetic states. Each memory unit is located at an intersection region between two orthogonal write lines and has two stacked memory cells. The two cells are magnetically separated from each other by a separation layer and have the easy axes of magnetization of their free ferromagnetic layers aligned substantially orthogonal to one another. The application of write-current pulses of equal magnitude and the appropriate direction through the orthogonal write lines above and below the memory units can generate each of the four magnetic states which can be detected as four independent logical states.
摘要翻译：磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的多个存储单元的存储器单元或堆叠，每个存储器单元具有四个可能的磁状态。每个存储器单元位于两个正交写入线之间的交叉区域，并且具有两个堆叠的存储器单元。两个电池通过分离层彼此磁性分离，并且其自由铁磁层的易磁化轴基本上彼此正交排列。通过在存储器单元上方和下方的正交写入线，施加相等幅度的写入电流脉冲和适当的方向，可以产生可以被检测为四个独立逻辑状态的四个磁状态中的每一个。

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