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    • 1. 发明申请
    • Novel method to reduce void formation during trapezoidal write pole plating in perpendicular recording
    • 在垂直记录中减少梯形写入极电镀期间的空隙形成的新方法
    • US20110011744A1
    • 2011-01-20
    • US12460432
    • 2009-07-17
    • Chao-Peng ChenJas ChudasamaSituan LamChien-Li Lin
    • Chao-Peng ChenJas ChudasamaSituan LamChien-Li Lin
    • C25D7/00
    • C25D5/022C25D5/18C25D7/001G11B5/1278G11B5/3116G11B5/3163
    • A method of forming a write pole in a PMR head is disclosed that involves forming an opening in a mold forming layer. A conformal Ru seed layer is formed within the opening and on a top surface. An auxiliary layer made of CoFeNi or alloys thereof is formed as a conformal layer on the seed layer. All or part of the auxiliary layer is removed in an electroplating solution by applying a (−) current or voltage during an activation step that is controlled by activation time. Thereafter, a magnetic material is electroplated with a (+) current to fill the opening and preferably has the same CoFeNi composition as the auxiliary layer. The method avoids Ru oxidation that causes poor adhesion to CoFeNi, and elevated surfactant levels that lead to write pole impurities. Voids in the plated material are significantly reduced by forming a seed layer surface with improved wettability.
    • 公开了一种在PMR头中形成写极的方法,其涉及在成型层中形成开口。 在开口内和顶表面上形成保形钌籽晶层。 由CoFeNi制成的辅助层或其合金在种子层上形成为保形层。 通过在由激活时间控制的激活步骤期间施加( - )电流或电压,在电镀溶液中去除全部或部分辅助层。 此后,以(+)电流电镀磁性材料以填充开口,并且优选地具有与辅助层相同的CoFeNi组成。 该方法避免了Ru氧化,导致对CoFeNi的粘附不良,以及导致写入极杂质的表面活性剂含量升高。 通过形成具有改善的润湿性的种子层表面,可显着地减少电镀材料中的空隙。
    • 2. 发明授权
    • CPP head with parasitic shunting reduction
    • CPP头与寄生分流减少
    • US07864490B2
    • 2011-01-04
    • US11901584
    • 2007-09-18
    • Jeiwei ChangStuart KaoChao Peng ChenChunping LuoKochan JuMin Li
    • Jeiwei ChangStuart KaoChao Peng ChenChunping LuoKochan JuMin Li
    • G11B5/33
    • G11B5/3163G11B5/398Y10T428/1171
    • The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.
    • CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部,在较小的较低部分上来减小。 由于涉及亚微米尺寸,这些之间的良好对准通常难以实现。 本发明公开了一种基于第一次铺设掩模的自对准过程,该掩模将确定顶部的形状。 然后开始离子束蚀刻,离子束最初仅从一侧以与表面法线成一定角度施加。 在蚀刻期间,掩模近侧的所有材料都被蚀刻,但在远侧,只有在掩模阴影之外的材料被去除,因此根据光束的角度,下部的尺寸被控制,并且上部 部分精确地集中在其上。
    • 4. 发明授权
    • Copper plating method
    • 镀铜方法
    • US09103012B2
    • 2015-08-11
    • US12931854
    • 2011-02-11
    • Chao-Peng ChenJas ChudasamaChien-Li LinDavid Wagner
    • Chao-Peng ChenJas ChudasamaChien-Li LinDavid Wagner
    • C25D5/34C23C2/02C23C14/58C25D5/02G11B5/17C23F1/12
    • C23F1/12C23C2/02C23C14/5873C25D5/022C25D5/34G11B5/17
    • A method of activating a copper seed layer during a plating process is disclosed that comprises application of vapor generated by an ultrasonic wave nebulizer. The energized vapor droplets include water and a weak organic acid such as acetic acid, lactic acid, citric acid, uric acid, oxalic acid, or formic acid that have a vapor pressure proximate to that of water. The weak organic acid preferably has a pKa high enough to avoid Cu etching but is sufficiently acidic to remove copper oxide at a rate that is compatible with high throughput manufacturing. In one embodiment, weak acid/water vapor is applied to a substrate in a spin bowl and is followed by a deionized water rinse step in the same spin bowl. Improved wettability results in improved uniformity in subsequently plated copper films. Considerable cost savings is realized as a result of reduced chemical consumption and higher product yields.
    • 公开了一种在镀覆工艺期间激活铜籽晶层的方法,其包括施加由超声波雾化器产生的蒸气。 通电的蒸气滴包括水和弱的有机酸如乙酸,乳酸,柠檬酸,尿酸,草酸或甲酸,其蒸气压接近于水。 弱有机酸优选具有足够高的pKa以避免Cu蚀刻,但是足够的酸性以与高通量制造相容的速率除去氧化铜。 在一个实施方案中,将弱酸/水蒸汽施加到旋转碗中的基底上,然后在同一旋转碗中进行去离子水漂洗步骤。 改进的润湿性导致随后镀覆的铜膜的均匀性提高。 由于化学品消耗减少和产品产量提高,实现了大量的成本节约。
    • 7. 发明申请
    • Ozone-assisted bi-layer lift-off stencil for narrow track CPP-GMR heads
    • 用于窄轨CPP-GMR头的臭氧辅助双层剥离模板
    • US20050233258A1
    • 2005-10-20
    • US10827949
    • 2004-04-20
    • Chao-Peng ChenRina KajiJei-Wei Chang
    • Chao-Peng ChenRina KajiJei-Wei Chang
    • G03F7/00G11B5/31
    • G11B5/3163
    • A method for forming a bi-layer lift-off mask for use in fabricating GMR read-head sensors with trackwidths of less than 0.1 microns. The mask layers are formed symmetrically on each other, each layer of the mask having a novel dog-bone shape and the lower mask layer being substantially undercut relative to the upper mask layer. The central portion of the lower mask layer forms a narrow ridge that maintains the upper mask layer at a fixed height above a substrate, thereby avoiding problems associated with bi-layer lift-off masks of the prior art. The method of forming the lower ridge requires a carefully controlled undercutting of the lower mask layer, which is accomplished by using an ozone-assisted oxidation process.
    • 一种形成用于制造轨道宽度小于0.1微米的GMR读取头传感器的双层剥离掩模的方法。 掩模层彼此对称地形成,每个掩模层具有新的狗骨形状,并且下掩模层相对于上掩模层基本上是底切的。 下掩模层的中心部分形成窄的脊,其将上掩模层保持在衬底上方的固定高度,从而避免了与现有技术的双层剥离掩模相关的问题。 形成下脊的方法需要仔细控制下掩模层的底切,这是通过使用臭氧辅助氧化工艺来实现的。