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1. 发明申请

US20120156167A1 ENHANCIN GENE BEL1 FROM BACILLUS THURINGIENSIS AND ITS USE IN BIOLOGICAL INSECTICIDE 有权
标题翻译：生物杀虫剂中的增强基因BEL1及其在生物杀虫剂中的用途
公开(公告)号：US20120156167A1
公开(公告)日：2012-06-21
申请号：US13133429
申请日：2009-11-23
申请人： Ming Sun , Ziniu Yu , Shangling Fang , Donghai Peng , Lifang Ruan , Shouwen Chen , Chunping Luo
发明人： Ming Sun , Ziniu Yu , Shangling Fang , Donghai Peng , Lifang Ruan , Shouwen Chen , Chunping Luo
IPC分类号： A01N37/46 , C07K14/32 , A01P15/00 , C07H21/04
CPC分类号： C12N15/8286 , A01N63/00 , A01N63/02 , C07K14/32 , C12N9/54 , Y02A40/162 , A01N2300/00
摘要： The isolation, cloning of an enhancin gene bel1 from Bacillus thuringiensis, and the use of an enhancin Bel1 in biological insecticides are disclosed in the present invention. A new enhancin gene bel1 is isolated from Bacillus thuringiensis subsp. kurstaki YBT-1520, and its encoded product is a new enhancin Bel1. The enhancin has very strong effect-enhancing activity on the insecticidal action of insecticidal crystal protein Cry1Ac in killing Lepidoptera insects. The insecticidal activity of genetically engineered Bacillus thuringiensis BMB0187 developed on the basis of this enhancin is 5.7 times as high as that of the initial strain.
摘要翻译：在本发明中公开了从苏云金芽孢杆菌中分离，克隆增强子基因bel1以及增强子Bel1在生物杀虫剂中的用途。从苏云金芽孢杆菌亚种分离出新的增强子基因bel1。 kurstaki YBT-1520，其编码产品是新的增效剂Bel1。增强子对杀虫水晶蛋白Cry1Ac杀死鳞翅目昆虫的杀虫作用具有非常强的增效作用。基于该增强子开发的遗传工程苏云金芽孢杆菌BMB0187的杀虫活性是初始菌株的杀虫活性的5.7倍。

2. 发明授权

US07279269B2 CPP head with parasitic shunting reduction 有权
标题翻译： CPP头与寄生分流减少
公开(公告)号：US07279269B2
公开(公告)日：2007-10-09
申请号：US10734422
申请日：2003-12-12
申请人： Jeiwei Chang , Stuart Kao , Chao Peng Chen , Chunping Luo , Kochan Ju , Min Li
发明人： Jeiwei Chang , Stuart Kao , Chao Peng Chen , Chunping Luo , Kochan Ju , Min Li
IPC分类号： G11B5/39
CPC分类号： G11B5/3163 , G11B5/398 , Y10T428/1171
摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.
摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部部分精确地集中在其上。

3. 发明授权

US07864490B2 CPP head with parasitic shunting reduction 有权
标题翻译： CPP头与寄生分流减少
公开(公告)号：US07864490B2
公开(公告)日：2011-01-04
申请号：US11901584
申请日：2007-09-18
申请人： Jeiwei Chang , Stuart Kao , Chao Peng Chen , Chunping Luo , Kochan Ju , Min Li
发明人： Jeiwei Chang , Stuart Kao , Chao Peng Chen , Chunping Luo , Kochan Ju , Min Li
IPC分类号： G11B5/33
CPC分类号： G11B5/3163 , G11B5/398 , Y10T428/1171
摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.
摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部部分精确地集中在其上。

4. 发明授权

US07810227B2 Process to manufacture CPP GMR read head 有权
标题翻译：制造CPP GMR读头的工艺
公开(公告)号：US07810227B2
公开(公告)日：2010-10-12
申请号：US11975247
申请日：2007-10-18
申请人： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
发明人： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
IPC分类号： G11B5/187 , C23C14/04
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01F10/3263 , H01F41/308 , Y10T29/49021 , Y10T29/49037 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Using a beam of xenon ions together with a suitable mask, a GMR stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the dielectric and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
摘要翻译：将氙离子束与合适的掩模一起使用，将GMR堆叠离子研磨直到其一部分厚度不超过约0.1微米已经被去除，使得具有侧壁的基座包括垂直部分，该垂直部分包括全部自由层已形成。其次是以通常的方式形成电介质和导电引线层。使用氙气作为溅射气体，可以更精确地控制铣削终止点。

5. 发明申请

US20080040914A1 Process to manufacture CPP GMR read head 有权
标题翻译：制造CPP GMR读头的工艺
公开(公告)号：US20080040914A1
公开(公告)日：2008-02-21
申请号：US11975247
申请日：2007-10-18
申请人： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
发明人： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01F10/3263 , H01F41/308 , Y10T29/49021 , Y10T29/49037 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Using a beam of xenon ions together with a suitable mask, a GMR stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the longitudinal bias and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
摘要翻译：将氙离子束与合适的掩模一起使用，将GMR堆叠离子研磨直到其一部分厚度不超过约0.1微米已经被去除，使得具有侧壁的基座包括垂直部分，该垂直部分包括全部自由层已形成。然后以通常的方式形成纵向偏置和导电引线层。使用氙气作为溅射气体，可以更精确地控制铣削终止点。

6. 发明申请

US20050130070A1 CPP head with parasitic shunting reduction 有权
标题翻译： CPP头与寄生分流减少
公开(公告)号：US20050130070A1
公开(公告)日：2005-06-16
申请号：US10734422
申请日：2003-12-12
申请人： Jeiwei Chang , Stuart Kao , Chao Chen , Chunping Luo , Kochan Ju , Min Li
发明人： Jeiwei Chang , Stuart Kao , Chao Chen , Chunping Luo , Kochan Ju , Min Li
IPC分类号： G03F7/00 , G11B5/31 , G11B5/39
CPC分类号： G11B5/3163 , G11B5/398 , Y10T428/1171
摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.
摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部部分精确地集中在其上。

7. 发明授权

US08623651B2 Enhancin gene bel1 from Bacillus thuringiensis and its use in biological insecticide 有权
标题翻译：来自苏云金芽孢杆菌的Enhancin基因bel1及其在生物杀虫剂中的应用
公开(公告)号：US08623651B2
公开(公告)日：2014-01-07
申请号：US13133429
申请日：2009-11-23
申请人： Ming Sun , Ziniu Yu , Shangling Fang , Donghai Peng , Lifang Ruan , Shouwen Chen , Chunping Luo
发明人： Ming Sun , Ziniu Yu , Shangling Fang , Donghai Peng , Lifang Ruan , Shouwen Chen , Chunping Luo
IPC分类号： C12N15/32 , C12N15/82 , C12N1/00 , C07K14/325
CPC分类号： C12N15/8286 , A01N63/00 , A01N63/02 , C07K14/32 , C12N9/54 , Y02A40/162 , A01N2300/00
摘要： The isolation, cloning of an enhancin gene bel1 from Bacillus thuringiensis, and the use of an enhancin Bel1 in biological insecticides are disclosed in the present invention. A new enhancin gene bel1 is isolated from Bacillus thuringiensis subsp. kurstaki YBT-1520, and its encoded product is a new enhancin Bel1. The enhancin has very strong effect-enhancing activity on the insecticidal action of insecticidal crystal protein Cry1Ac in killing Lepidoptera insects. The insecticidal activity of genetically engineered Bacillus thuringiensis BMB0187 developed on the basis of this enhancin is 5.7 times as high as that of the initial strain.
摘要翻译：在本发明中公开了从苏云金芽孢杆菌中分离，克隆增强子基因bel1以及增强子Bel1在生物杀虫剂中的用途。从苏云金芽孢杆菌亚种分离出新的增强子基因bel1。 kurstaki YBT-1520，其编码产品是新的增效剂Bel1。增强子对杀虫水晶蛋白Cry1Ac杀死鳞翅目昆虫的杀虫作用具有非常强的增效作用。基于该增强子开发的遗传工程苏云金芽孢杆菌BMB0187的杀虫活性是初始菌株的杀虫活性的5.7倍。

8. 发明授权

US08087157B2 Process to manufacture magnetic tunnel junction read head 有权
标题翻译：制造磁性隧道结读头的工艺
公开(公告)号：US08087157B2
公开(公告)日：2012-01-03
申请号：US11975266
申请日：2007-10-18
申请人： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
发明人： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
IPC分类号： G11B5/187 , B44C1/22
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01F10/3263 , H01F41/308 , Y10T29/49021 , Y10T29/49037 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Using a beam of xenon ions together with a suitable mask, a MTJ stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the longitudinal bias and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
摘要翻译：使用一束氙离子与合适的掩模，MTJ堆叠被离子研磨直到其不超过约0.1微米厚的一部分被去除，使得具有包括垂直部分的侧壁的基座包括全部自由层已形成。然后以通常的方式形成纵向偏置和导电引线层。使用氙气作为溅射气体，可以更精确地控制铣削终止点。

9. 发明申请

US20080050615A1 CPP head with parasitic shunting reduction 有权
标题翻译： CPP头与寄生分流减少
公开(公告)号：US20080050615A1
公开(公告)日：2008-02-28
申请号：US11901584
申请日：2007-09-18
申请人： Jeiwei Chang , Stuart Kao , Chao Chen , Chunping Luo , Kochan Ju , Min Li
发明人： Jeiwei Chang , Stuart Kao , Chao Chen , Chunping Luo , Kochan Ju , Min Li
IPC分类号： G11B5/33
CPC分类号： G11B5/3163 , G11B5/398 , Y10T428/1171
摘要： The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.
摘要翻译： CPP GMR堆叠的串联电阻可以通过将其成形为较小的上部，在较小的较低部分上来减小。由于涉及亚微米尺寸，这些之间的良好对准通常难以实现。本发明公开了一种基于第一次铺设掩模的自对准过程，该掩模将确定顶部的形状。然后开始离子束蚀刻，离子束最初仅从一侧以与表面法线成一定角度施加。在蚀刻期间，掩模近侧的所有材料都被蚀刻，但在远侧，只有在掩模阴影之外的材料被去除，因此根据光束的角度，下部的尺寸被控制，并且上部部分精确地集中在其上。

10. 发明授权

US08256096B2 Method of using xenon ion beams to improve track width definition 有权
标题翻译：使用氙离子束改善轨道宽度定义的方法
公开(公告)号：US08256096B2
公开(公告)日：2012-09-04
申请号：US11975265
申请日：2007-10-18
申请人： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
发明人： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
IPC分类号： G11B5/127 , C23F1/04
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01F10/3263 , H01F41/308 , Y10T29/49021 , Y10T29/49037 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Using a beam of xenon ions together with a suitable mask, a stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal having sidewalls, including a vertical section and a shortened taper portion, has been formed. This is followed by formation of conductive lead layers as needed. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
摘要翻译：将氙离子束与合适的掩模一起使用，将堆叠物离子研磨直到其不超过约0.1微米厚的一部分被去除，使得具有侧壁的基座包括垂直部分和缩短的锥形部分，已经形成。随后根据需要形成导电引线层。使用氙气作为溅射气体，可以更精确地控制铣削终止点。

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