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1. 发明授权

US06992910B1 Magnetic random access memory with three or more stacked toggle memory cells and method for writing a selected cell 有权
标题翻译：具有三个或更多个堆叠式触发存储器单元的磁性随机存取存储器以及用于写入所选单元的方法
公开(公告)号：US06992910B1
公开(公告)日：2006-01-31
申请号：US11185331
申请日：2005-07-20
申请人： Kochan Ju , Oletta Allegranza
发明人： Kochan Ju , Oletta Allegranza
IPC分类号： G11C7/00
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/226
摘要： A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each memory stack is located at an intersection region between two orthogonal write lines. Each cell in the stack is a “toggle” cell that has its synthetic antiferromagnet (SAF) free layer easy axis of magnetization aligned nonparallel with the X and Y axes and angularly spaced about the Z axis from the easy axes of magnetization of all the other SAF free layers in the stack. Each cell in a stack is magnetically separated from adjacent cells in the stack by a nonmagnetic separation layer. The magnetization direction of the free layer in a selected memory cell in a stack can be switched without switching the magnetization directions of the free layers in the other memory cells in the stack.
摘要翻译： “切换”型磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储堆栈具有沿着Z轴堆叠的多个触发存储器单元。每个存储器堆栈位于两个正交写入线之间的交叉区域。堆叠中的每个单元是具有其合成反铁磁体（SAF）自由层的容易的磁化轴与“X”和“Y”轴线不平行的“切换”单元，并且与所有其它的容易的磁化轴围绕Z轴成角度地间隔开堆栈中的SAF自由层。堆叠中的每个电池通过非磁性分离层与堆叠中的相邻电池磁分离。可以切换堆叠中的选定存储单元中的自由层的磁化方向，而不切换堆叠中的其他存储单元中的自由层的磁化方向。

2. 发明授权

US06937497B1 Magnetic random access memory with stacked toggle memory cells 有权
标题翻译：带随机存取存储单元的磁性随机存取存储器
公开(公告)号：US06937497B1
公开(公告)日：2005-08-30
申请号：US10991993
申请日：2004-11-18
申请人： Kochan Ju , Oletta Allegranza
发明人： Kochan Ju , Oletta Allegranza
IPC分类号： G11C11/15 , G11C11/16
CPC分类号： G11C11/16
摘要： A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each memory stack is located at an intersection region between two orthogonal write lines. Each cell in the stack is a “toggle” cell that has its synthetic antiferromagnet (SAF) free layer easy axis of magnetization aligned nonparallel with the X and Y axes and angularly spaced about the Z axis from the easy axes of magnetization of all the other SAF free layers in the stack. Each cell in a stack is magnetically separated from adjacent cells in the stack by a nonmagnetic separation layer. The magnetization direction of the free layer in a selected memory cell in a stack can be switched without switching the magnetization directions of the free layers in the other memory cells in the stack.
摘要翻译： “切换”型磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储堆栈具有沿着Z轴堆叠的多个触发存储器单元。每个存储器堆栈位于两个正交写入线之间的交叉区域。堆叠中的每个单元是具有其合成反铁磁体（SAF）自由层的容易的磁化轴与“X”和“Y”轴线不平行的“切换”单元，并且与所有其它的容易的磁化轴围绕Z轴成角度地间隔开堆栈中的SAF自由层。堆叠中的每个电池通过非磁性分离层与堆叠中的相邻电池磁分离。可以切换堆叠中的选定存储单元中的自由层的磁化方向，而不切换堆叠中的其他存储单元中的自由层的磁化方向。

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