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1. 发明申请

US20070160761A1 Tungsten and molybdenum compounds and thier use for chemical vapour deposition (CVD) 失效
标题翻译：钨和钼化合物及其用于化学气相沉积（CVD）
公开(公告)号：US20070160761A1
公开(公告)日：2007-07-12
申请号：US11649504
申请日：2007-01-04
申请人： Knud Reuter , Jorg Sundermeyer , Alexei Merkoulov , Wolfgang Stolz , Kestin Volz , Michael Pokoj , Thomas Ochs
发明人： Knud Reuter , Jorg Sundermeyer , Alexei Merkoulov , Wolfgang Stolz , Kestin Volz , Michael Pokoj , Thomas Ochs
IPC分类号： C23C16/00 , C07F11/00
CPC分类号： C23C16/34 , C07F11/005 , C23C16/18 , Y10T428/12174
摘要： The present invention relates to specific novel tungsten and molybdenum compounds to the use thereof for the deposition of tungsten- or molybdenum-containing layers by means of chemical vapour deposition, and to the tungsten- or molybdenum-containing layers produced by this process.
摘要翻译：本发明涉及用于通过化学气相沉积沉积含钨或含钼层的特定新型钨和钼化合物以及通过该方法生产的含钨或钼的层。

2. 发明授权

US07754908B2 Tungsten and molybdenum compounds and their use for chemical vapour deposition (CVD) 失效
标题翻译：钨和钼化合物及其用于化学气相沉积（CVD）
公开(公告)号：US07754908B2
公开(公告)日：2010-07-13
申请号：US11649504
申请日：2007-01-04
申请人： Knud Reuter , Jörg Sundermeyer , Alexei Merkoulov , Wolfgang Stolz , Kestin Volz , Michael Pokoj , Thomas Ochs
发明人： Knud Reuter , Jörg Sundermeyer , Alexei Merkoulov , Wolfgang Stolz , Kestin Volz , Michael Pokoj , Thomas Ochs
IPC分类号： C07F11/00
CPC分类号： C23C16/34 , C07F11/005 , C23C16/18 , Y10T428/12174
摘要： The present invention relates to specific novel tungsten and molybdenum compounds to the use thereof for the deposition of tungsten- or molybdenum-containing layers by means of chemical vapour deposition, and to the tungsten- or molybdenum-containing layers produced by this process.
摘要翻译：本发明涉及用于通过化学气相沉积沉积含钨或含钼层的特定新型钨和钼化合物以及通过该方法制备的含钨或钼的层。

3. 发明申请

US20070042213A1 Tantalum and niobium compounds and their use for chemical vapour deposition (CVD) 失效
公开(公告)号：US20070042213A1
公开(公告)日：2007-02-22
申请号：US11482397
申请日：2006-07-07
申请人： Knud Reuter , Jorg Sundermeyer , Alexei Merkoulov , Wolfgang Stolz , Kerstin Volz , Michael Pokoj , Thomas Ochs
发明人： Knud Reuter , Jorg Sundermeyer , Alexei Merkoulov , Wolfgang Stolz , Kerstin Volz , Michael Pokoj , Thomas Ochs
IPC分类号： C07F9/00 , H01L21/316
CPC分类号： C07F9/005 , C23C16/34 , Y10T428/12528
摘要： Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described: wherein M stands for Nb or Ta, R1 and R2 mutually independently denote optionally substituted C1 to C12 alkyl, C5 to C12 cycloalkyl, C6 to C10 aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl radicals —SiR3, or amino radicals NR2 where R═C1 to C4 alkyl, R3 denotes an optionally substituted C1 to C8 alkyl, C5 to C10 cycloalkyl, C6 to C14 aryl radical, or SiR3 or NR2, R4 denotes halogen from the group comprising Cl, Br, I, or NH—R5 where R5═optionally substituted C1 to C8 alkyl, C5 to C10 cycloalkyl or C6 to C10 aryl radical, or O—R6 where R6=optionally substituted C1 to C11 alkyl, C5 to C10 cycloalkyl, C6 to C10 aryl radical, or —SiR3, or BH4, or an optionally substituted allyl radical, or an indenyl radical, or an optionally substituted benzyl radical, or an optionally substituted cyclopentadienyl radical, or —NR—NR′R″ (hydrazido(−1), wherein R, R′ and R″ have the aforementioned meaning of R, or CH2SiMe3, pseudohalide (e.g. —N3), or silylamide —N(SiMe3)2, R7 and R8 mutually independently denote H, optionally substituted C1 to C12 alkyl, C5 to C12 cycloalkyl or C6 to C10 aryl radicals.

4. 发明授权

US07442407B2 Tantalum and niobium compounds and their use for chemical vapour deposition (CVD) 失效
公开(公告)号：US07442407B2
公开(公告)日：2008-10-28
申请号：US11482397
申请日：2006-07-07
申请人： Knud Reuter , Jörg Sundermeyer , Alexei Merkoulov , Wolfgang Stolz , Kerstin Volz , Michael Pokoj , Thomas Ochs
发明人： Knud Reuter , Jörg Sundermeyer , Alexei Merkoulov , Wolfgang Stolz , Kerstin Volz , Michael Pokoj , Thomas Ochs
IPC分类号： B05D5/12 , C07F517/00
CPC分类号： C07F9/005 , C23C16/34 , Y10T428/12528
摘要： Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described: wherein M stands for Nb or Ta, R1 and R2 C1 to C12 alkyl, C5 to C12 cycloalkyl, C6 to C10 aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl radicals —SiR3, or amino radicals NR2 R3 is C1 to C8 alkyl, C5 to C10 cycloalkyl, C6 to C14 aryl radical, or SiR3 or NR2, R4 denotes Cl, Br, I, NIH—R5 where R5 is C1 to C8 alkyl, C5 to C10 cycloalkyl or C6 to C10 aryl radical, or O—R6 where R6=optionally substituted C1 to C11 alkyl, C5 to C10 cycloalkyl, C6 to C10 aryl radical, or —SiR3, or BH4, or an allyl radical, or an indenyl radical, or an benzyl radical, or an cyclopentadienyl radical, or —NIR—NR′R″ (hydrazido(-1), wherein R, R′ and R″ have the aforementioned meaning of R, or CH2SiMe3, pseudohalide, or silylamide —N(SiMe3)2, and R7 and R8 are H, C1 to C12 alkyl, C5 to C12 cycloalkyl or C6 to C10 aryl radicals.

5. 发明申请

US20080038466A1 TANTALUM AND NIOBIUM COMPOUNDS AND THEIR USE FOR CHEMICAL VAPOUR DEPOSITION (CVD) 审中-公开
标题翻译：钛和铌化合物及其用于化学气相沉积（CVD）
公开(公告)号：US20080038466A1
公开(公告)日：2008-02-14
申请号：US11836192
申请日：2007-08-09
申请人： Knud Reuter , Stephan Kirchmeyer , Daniel Gaess , Michael Pokoj , Jorg Sundermeyer , Wolfgang Stolz , Thomas Ochs , Kerstin Volz
发明人： Knud Reuter , Stephan Kirchmeyer , Daniel Gaess , Michael Pokoj , Jorg Sundermeyer , Wolfgang Stolz , Thomas Ochs , Kerstin Volz
IPC分类号： C23C16/00 , C07F9/00
CPC分类号： C07F9/005 , C23C16/18
摘要： The present invention relates to special, novel tantalum and niobium compounds, the use thereof for the deposition of tantalum- or niobium-containing layers by means of chemical vapour deposition and the tantalum- or niobium-containing layers produced by this process.
摘要翻译：本发明涉及特殊的新型钽和铌化合物，其用于通过化学气相沉积和通过该方法制备的含钽或铌的层沉积含钽或铌的层。

6. 发明授权

US5057881A Light emitting compositional semiconductor device 失效
标题翻译：发光组合半导体器件
公开(公告)号：US5057881A
公开(公告)日：1991-10-15
申请号：US444194
申请日：1989-11-30
申请人： Hans Lobentanzer , Wolfgang Stolz , Klaus Ploog , Julien Nagle
发明人： Hans Lobentanzer , Wolfgang Stolz , Klaus Ploog , Julien Nagle
IPC分类号： H01L33/06 , H01S5/00 , H01S5/34
CPC分类号： H01L33/06 , B82Y20/00 , H01S5/34
摘要： A multiple quantum well light emitting compositional semiconductor device ch as a laser diode or a light emitting diode has an active region comprising an alternating sequence of layers of well layer material and of barrier layer material. The thickness of the barrier layer and of the adjacent well layers is chosen such that for one type of charge carrier a relatively high probability exists for such charge carriers to be present in the barrier region whereas the other type of charge carriers are localized in the potential wells. In this way it is possible to reduce the probability of non-radiative Auger recombination processes occurring thus reducing the threshold current and increasing the quantum efficiency of the device. This is particularly important since material systems with a small bandgap which lase at long wavelengths suitable for optical fibre transmission normally suffer performance penalties due to non-radiative Auger recombination and these penalties can be substantially reduced by tailoring the layer thicknesses to achieve the described probability distributions.
摘要翻译：诸如激光二极管或发光二极管的多量子阱发光组合半导体器件具有包括阱层材料层和势垒层材料的交替序列的有源区。选择阻挡层和相邻阱层的厚度，使得对于一种类型的电荷载体，存在这样的电荷载流子存在于阻挡区域中的相对高的概率，而另一种类型的载流子被定位在电位井。以这种方式，可以降低发生的非辐射俄歇复合过程的可能性，从而降低阈值电流并提高器件的量子效率。这是特别重要的，因为具有适用于光纤传输的长波长的小带隙的材料系统通常由于非辐射俄歇复合而遭受性能惩罚，并且通过调整层厚度可以显着减少这些惩罚以实现所描述的概率分布。

7. 发明申请

US20070012908A1 III/V-semiconductor 审中-公开
标题翻译： III / V型半导体
公开(公告)号：US20070012908A1
公开(公告)日：2007-01-18
申请号：US11342287
申请日：2006-01-26
申请人： Bernardette Kunert , Jorg Koch , Stefan Reinhard , Kerstin Volz , Wolfgang Stolz
发明人： Bernardette Kunert , Jorg Koch , Stefan Reinhard , Kerstin Volz , Wolfgang Stolz
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01S5/183 , B82Y20/00 , C30B25/02 , C30B29/40 , H01L21/02381 , H01L21/02392 , H01L21/0245 , H01L21/02461 , H01L21/02502 , H01L21/02505 , H01L21/02538 , H01L21/0262 , H01L29/201 , H01L33/06 , H01L33/26 , H01L33/32 , H01S5/021 , H01S5/0218 , H01S5/323 , H01S5/34333 , H01S5/3434
摘要： The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaxInyNaAsbPcSbd, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand and of a to d on the other hand is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.
摘要翻译：本发明涉及一种单片集成半导体结构，其包括基于掺杂的Si或掺杂GaP的载流子层和布置在其上的III / V半导体，其组成为Ga x In y y 其中x = 70-100摩尔％，y为0〜 = 0-30摩尔％，a = 0.5-15摩尔％，b = 67.5-99.5摩尔％，c = 0-32.0摩尔％和d = 0-15摩尔％，其中x和 y总是100摩尔％，其中a，b，c和d的总和总是100摩尔％，另一方面，x和y的总和与a的总和的比例基本上是1：1，其制造方法，新的半导体，其用于生产发光二极管和激光二极管的用途，或者也是基于Si或GaP单片集成在集成电路中的调制器和检测器结构技术。

8. 发明申请

US20070217457A1 Optically Pumped Semiconductor Devices for the Generation of Radiation, Their Production as Well as Methods for the Strain Compensation in the Layer Successions used Within 审中-公开
标题翻译：用于产生辐射的光学泵浦半导体器件，其生产以及所使用的层连续中的应变补偿方法
公开(公告)号：US20070217457A1
公开(公告)日：2007-09-20
申请号：US10580653
申请日：2004-11-25
申请人： Wolfgang Stolz , Stephan Lutgen
发明人： Wolfgang Stolz , Stephan Lutgen
IPC分类号： H01S5/00
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/183 , H01S5/3406 , H01S5/34313 , H01S2304/04
摘要： A new method for the production of strain-compensating semiconductor layers is suggested, as well as its use for the production of strained-controlled semiconductor layer systems and the production of optically pumped semiconductor devices for the production of radiation, preferably long-wave radiation.
摘要翻译：提出了用于生产应变补偿半导体层的新方法，以及其用于生产应变控制半导体层系统的用途以及用于生产辐射，优选长波辐射的光泵浦半导体器件的生产。

9. 发明授权

US09610942B2 Device and method for operating a vehicle 有权
公开(公告)号：US09610942B2
公开(公告)日：2017-04-04
申请号：US14357482
申请日：2012-09-17
申请人： Werner Poechmueller , Stefan Nordbruch , Andreas Lapp , Michael Knoop , Tino Sommer , Wolfgang Stolz
发明人： Werner Poechmueller , Stefan Nordbruch , Andreas Lapp , Michael Knoop , Tino Sommer , Wolfgang Stolz
IPC分类号： B60W30/02 , B60W30/188 , B60W50/14 , B60W50/00
CPC分类号： B60W30/02 , B60W30/188 , B60W50/0098 , B60W50/14 , B60W2050/0025 , B60W2050/0091 , B60W2050/0094 , B60W2050/146 , B60W2550/12 , B60W2550/141 , B60W2550/143 , B60W2550/402
摘要： A device for operating a vehicle includes: a vehicle movement module for forming control signals for a control unit of an actuating system of the vehicle; an energy management module for managing energy which is available for a vehicle operation, the energy management module being configured to form further control signals for the control unit as a function of the available energy, and a prioritizer for prioritizing the control signals over the further control signals as a function of a vehicle position and/or a vehicle movement state for stabilizing the vehicle.

10. 发明授权

US08421055B2 III/V-semiconductor 有权
标题翻译： III / V型半导体
公开(公告)号：US08421055B2
公开(公告)日：2013-04-16
申请号：US12472224
申请日：2009-05-26
申请人： Bernardette Kunert , Jorg Koch , Stefan Reinhard , Kerstin Volz , Wolfgang Stolz
发明人： Bernardette Kunert , Jorg Koch , Stefan Reinhard , Kerstin Volz , Wolfgang Stolz
IPC分类号： H01L33/00
CPC分类号： H01S5/183 , B82Y20/00 , C30B25/02 , C30B29/40 , H01L21/02381 , H01L21/02392 , H01L21/0245 , H01L21/02461 , H01L21/02502 , H01L21/02505 , H01L21/02538 , H01L21/0262 , H01L29/201 , H01L33/06 , H01L33/26 , H01L33/32 , H01S5/021 , H01S5/0218 , H01S5/323 , H01S5/34333 , H01S5/3434
摘要： The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaxInyNaAsbPcSbd, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand, and of a to d on the other hand, is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.
摘要翻译：本发明涉及一种单片集成半导体结构，其包括基于掺杂的Si或掺杂的GaP的载流子层和其上配置的具有组成GaxInyNaAsbPcSbd的III / V半导体，其中x = 70-100摩尔％，y = 0- 30摩尔％，a = 0.5-15摩尔％，b = 67.5-99.5摩尔％，c = 0-32.0摩尔％和d = 0-15摩尔％，其中x和y的总和总是 100摩尔％，其中a，b，c和d的总和总是100摩尔％，另一方面，x和y的总和与a的总和的比率是基本上为1：1，其制造方法，新的半导体，其用于生产发光二极管和激光二极管的用途，或者也是调制器和检测器结构，其基于Si或GaP技术单片集成在集成电路中。

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