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    • 9. 发明授权
    • Titanium-tungsten target material and manufacturing method thereof
    • 钛钨靶材及其制造方法
    • US5306569A
    • 1994-04-26
    • US914544
    • 1992-07-16
    • Akitoshi Hiraki
    • Akitoshi Hiraki
    • C23C14/34B22F3/16
    • H01J37/3429C23C14/3414Y10T428/12174
    • A titanium-tungsten target material capable of limiting the amount of particles generated during sputtering and a method of manufacturing this titanium-tungsten material. The titanium-tungsten target material has a titanium-tungsten alloy phase which occupies 98% or more of the whole area of the material as observed in a micro-structure thereof. In one example of the manufacturing method, an ingot obtained by melting tungsten and titanium is processde by a solution treatment to form a titanium-tungsten target, or a power obtained by melting the ingot is sintered to form a target. Preferably, the melting may be performed under reduced pressure in an electron beam melting manner. In another example of the manufacturing method, a powder is formed from a molten metal by an atomization method and the obtained powder is sintered to form a titanium-tungsten target. For sintering of the powder, it is preferable to apply hot isostatic pressing or hot pressing.
    • 能够限制溅射时产生的颗粒的量的钛 - 钨靶材料以及该钛 - 钨材料的制造方法。 钛 - 钨靶材料具有钛 - 钨合金相,其占微结构中观察到的材料的整个面积的98%以上。 在制造方法的一个实例中,通过熔融钨和钛而获得的锭通过固溶处理而形成钛 - 钨靶,或者通过将锭熔化获得的功率被烧结以形成靶。 优选地,可以以电子束熔化的方式在减压下进行熔融。 在制造方法的另一实例中,通过雾化法由熔融金属形成粉末,并将所得粉末烧结以形成钛 - 钨靶。 为了烧结粉末,优选采用热等静压或热压。