专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5422498A Apparatus for diagnosing interconnections of semiconductor integrated circuits 失效
标题翻译：用于诊断半导体集成电路互连的装置
公开(公告)号：US5422498A
公开(公告)日：1995-06-06
申请号：US227241
申请日：1994-04-13
申请人： Kiyoshi Nikawa , Yasuko Hanagama , Toyokazu Nakamura
发明人： Kiyoshi Nikawa , Yasuko Hanagama , Toyokazu Nakamura
IPC分类号： G01R31/28 , G01R31/311 , G01R31/00
CPC分类号： G01R31/311 , G01R31/2853
摘要： The invention provides an apparatus for diagnosing a void within a conductive material for interconnections of semiconductor integrated circuits. A laser beam irradiating section is provided for supplying a thermal wave to interconnections of the semiconductor integrated circuits to cause a rise of a temperature of the conductive material due to a thermal accumulation around a void within the conductive material, the thermal wave supplying section being able to move in a plane for accomplishment of a scanning operation of the thermal wave supply. A voltage applying section is connected to the interconnections. A current detecting section is connected to the interconnections for detecting an amount of an electrical current flowing through any part of the interconnections to sense a variation of the amount thereof on account of the rise of the temperature of the conductive material due to the thermal accumulation around the void within the conductive material so as to detect any void within the conductive material.
摘要翻译：本发明提供一种用于诊断用于半导体集成电路的互连的导电材料内的空隙的装置。提供激光束照射部分，用于将热波提供给半导体集成电路的互连，导致由导电材料内的空隙周围的热积聚引起的导电材料的温度升高，热波供应部能够在飞机中移动以完成热波供应的扫描操作。电压施加部连接到互连。电流检测部分连接到互连件，用于检测流过互连部分的电流量，以便由于热累积导致的导电材料的温度升高而感测其量的变化导电材料内的空隙，以便检测导电材料内的任何空隙。

2. 发明授权

US5521516A Semiconductor integrated circuit fault analyzing apparatus and method therefor 失效
标题翻译：半导体集成电路故障分析装置及其方法
公开(公告)号：US5521516A
公开(公告)日：1996-05-28
申请号：US354088
申请日：1994-12-06
申请人： Yasuko Hanagama , Toyokazu Nakamura , Kiyoshi Nikawa , Tohru Tsujide
发明人： Yasuko Hanagama , Toyokazu Nakamura , Kiyoshi Nikawa , Tohru Tsujide
IPC分类号： G01R31/302 , G01R31/307 , H01L21/66 , G01R1/04
CPC分类号： G01R31/307
摘要： A semiconductor integrated circuit fault analyzing apparatus includes an electron beam tester and controller. The electron beam tester includes an electron gun assembly for generating a primary electron beam and forms a voltage contrast image on the basis of a detection amount of secondary electrons obtained by irradiating the primary electron beam from the electron gun assembly onto a semiconductor integrated circuit serving as a target to be tested and supplied with a test pattern signal, thereby specifying a faulty circuit portion of the semiconductor integrated circuit using the formed voltage contrast image. The controller sets, immediately before the test pattern signal is supplied to the semiconductor integrated circuit, at least one of a power and a signal which are supplied to the semiconductor integrated circuit to be a voltage different from a voltage obtained in the presence of the test pattern signal to cause the electron beam tester to acquire a voltage contrast image free from charge-up phenomena in synchronism with the start of supplying the test pattern signal.
摘要翻译：半导体集成电路故障分析装置包括电子束测试器和控制器。该电子束测试器包括一个用于产生一次电子束的电子枪组件，并且基于通过将来自电子枪组件的一次电子束照射到半导体集成电路而获得的二次电子的检测量形成电压对比图像，要测试并提供测试图案信号的目标，从而使用形成的电压对比图像指定半导体集成电路的故障电路部分。控制器将紧接在测试图案信号提供给半导体集成电路之前，将提供给半导体集成电路的功率和信号中的至少一个设置为与存在测试时获得的电压不同的电压模式信号使电子束测试仪与开始提供测试图案信号同步地获取没有充电现象的电压对比图像。

3. 发明授权

US5548211A Dynamic fault imaging system using electron beam and method of analyzing fault 失效
标题翻译：使用电子束的动态故障成像系统和故障分析方法
公开(公告)号：US5548211A
公开(公告)日：1996-08-20
申请号：US400199
申请日：1995-03-03
申请人： Tohru Tujide , Toyokazu Nakamura , Kiyoshi Nikawa
发明人： Tohru Tujide , Toyokazu Nakamura , Kiyoshi Nikawa
IPC分类号： G01R31/305 , G01R31/28
CPC分类号： G01R31/305
摘要： A dynamic fault analyzing system discontinuously radiates an electron beam onto a semiconductor integrated circuit device applied with a test pattern for monitoring a secondary electron beam produced in the semiconductor integrated circuit device, and the intensity of the secondary electron beam is varied depending upon combination of voltage level and topography of a wiring pattern incorporated in the semiconductor integrated circuit device, wherein a fault is detectable from discrepancy between variation of the secondary electron beam produced in a defective product and variation of the secondary electron beam produced in an excellent product; however, the variation of the secondary electron beam contains topographic information, and the failure origin is easily specified on an image produced on the basis of the topographic information.
摘要翻译：动态故障分析系统不连续地将电子束辐射到应用了用于监测在半导体集成电路器件中产生的二次电子束的测试图案的半导体集成电路器件上，并且二次电子束的强度根据电压的组合而变化包含在半导体集成电路器件中的布线图形的电平和形状，其中可以从在不良产品中产生的二次电子束的变化和在优异的产品中产生的二次电子束的变化之间的差异来检测故障; 然而，二次电子束的变化包含地形信息，并且容易地根据地形信息产生的图像指定故障起点。

4. 发明授权

US07484883B2 Non-destructive testing apparatus and non-destructive testing method 失效
标题翻译：无损检测设备及无损检测方法
公开(公告)号：US07484883B2
公开(公告)日：2009-02-03
申请号：US11447891
申请日：2006-06-07
申请人： Kiyoshi Nikawa
发明人： Kiyoshi Nikawa
IPC分类号： G01N25/72 , G01N25/20
CPC分类号： G01K11/165 , G01K2213/00
摘要： To detect a defect without being limited to the current path of a sample. The presence or absence of a defect in a sample is detected by allowing said sample to stand for a predetermined period of time after heating said sample with a heat source and by observing the temperature distribution formed on said sample by an observation unit.
摘要翻译：检测缺陷而不限于样品的当前路径。通过在用热源加热所述样品之后，通过使观察单元观察形成在所述样品上的温度分布，允许所述样品静置预定时间来检测样品中是否存在缺陷。

5. 发明授权

US07173447B2 Method and apparatus for diagnosing fault in semiconductor device 有权
标题翻译：用于诊断半导体器件故障的方法和装置
公开(公告)号：US07173447B2
公开(公告)日：2007-02-06
申请号：US11038485
申请日：2005-01-21
申请人： Masatsugu Yamashita , Kodo Kawase , Masayoshi Tonouchi , Toshihiro Kiwa , Kiyoshi Nikawa
发明人： Masatsugu Yamashita , Kodo Kawase , Masayoshi Tonouchi , Toshihiro Kiwa , Kiyoshi Nikawa
IPC分类号： G01R31/26
CPC分类号： G01R31/311
摘要： An apparatus for diagnosing a fault in a semiconductor device includes an laser applying unit, a detection/conversion unit, and a fault diagnosis unit. The semiconductor device is held at a state where no bias voltage is applied thereto. The laser applying unit then applies a pulse laser beam having a predetermined wavelength to the semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam. The detection/conversion unit detects an electromagnetic wave generated from a laser applied position in the semiconductor device, and converts the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave. The fault diagnosis unit derives an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.
摘要翻译：用于诊断半导体器件中的故障的装置包括激光施加单元，检测/转换单元和故障诊断单元。半导体器件保持在不施加偏置电压的状态。激光施加单元然后将具有预定波长的脉冲激光束施加到半导体器件，以便用脉冲激光束对半导体器件进行二维扫描。检测/转换单元检测从半导体器件中的激光施加位置产生的电磁波，并将检测到的电磁波转换成对应于电磁波的电场的时变幅度的时变电压信号。故障诊断单元根据时变电压信号，在半导体装置中导出电场分布，对半导体装置进行故障诊断。

6. 发明申请

US20090002000A1 FAILURE ANALYSIS METHOD AND FAILURE ANALYSIS APPARATUS 失效
标题翻译：故障分析方法和故障分析设备
公开(公告)号：US20090002000A1
公开(公告)日：2009-01-01
申请号：US12164437
申请日：2008-06-30
申请人： Kiyoshi Nikawa
发明人： Kiyoshi Nikawa
IPC分类号： G01R31/311
CPC分类号： G01R31/311 , G01R31/315
摘要： Failure analysis method includes performing fixed radiation of semiconductor chip (wafer) by photocurrent generation laser beam, scanning and radiating a region to be observed on semiconductor chip by heating laser beam, detecting, by a SQUID fluxmeter, current change generated in the semiconductor chip by radiating the photocurrent generation laser beam and the heating laser beam, and analyzing failure of the semiconductor chip based on current change detected by the SQUID fluxmeter. Radiation of photocurrent generation laser beam and heating laser beam are performed from a back surface side of the LSI chip, and detection by the SQUID fluxmeter is performed on a front surface side of the LSI chip. In analysis of failure of the LSI chip, image processing is performed in which a signal outputted from the SQUID fluxmeter is made to correspond to a scanning point. Visualization of defects is possible.
摘要翻译：故障分析方法包括通过光电流产生激光进行半导体芯片（晶片）的固定辐射，通过加热激光束扫描和照射半导体芯片上要观察的区域，通过SQUID磁通计检测在半导体芯片中产生的电流变化照射光电流产生激光束和加热激光束，并且基于由SQUID通量计检测到的电流变化来分析半导体芯片的故障。从LSI芯片的背面进行光电流产生激光束和加热激光的照射，在LSI芯片的正面侧进行SQUID磁通计的检测。在对LSI芯片的故障进行分析时，执行从SQUID磁通计输出的信号对应于扫描点的图像处理。缺陷的可视化是可能的。

7. 发明申请

US20060280222A1 Non-destructive testing apparatus and non-destructive testing method 失效
公开(公告)号：US20060280222A1
公开(公告)日：2006-12-14
申请号：US11447891
申请日：2006-06-07
申请人： Kiyoshi Nikawa
发明人： Kiyoshi Nikawa
IPC分类号： G01N25/72 , G01K3/00 , G01K1/16
CPC分类号： G01K11/165 , G01K2213/00
摘要： To detect a defect without being limited to the current path of a sample. The presence or absence of a defect in a sample is detected by allowing said sample to stand for a predetermined period of time after heating said sample with a heat source and by observing the temperature distribution formed on said sample by an observation unit.

8. 发明授权

US06610918B2 Device and method for nondestructive inspection on semiconductor device 失效
公开(公告)号：US06610918B2
公开(公告)日：2003-08-26
申请号：US10095858
申请日：2002-03-12
申请人： Kiyoshi Nikawa
发明人： Kiyoshi Nikawa
IPC分类号： H01L3528
CPC分类号： G01R31/311
摘要： A nondestructive inspection device (or method) is basically configured such that a laser beam (1300 nm) is irradiated on a surface (or back) of a semiconductor device chip to scan. Due to irradiation of the laser beam, a defect position is heated to cause a thermoelectromotive current, which induces a magnetic field. A magnetic field detector such as SQUID detects a strength of the magnetic field, based on which a scan magnetic field image is produced. A display device superimposes the scan magnetic field image on a scan laser microphotograph on a screen, so it is possible to perform defect inspection on the semiconductor device chip. Incidentally, a semiconductor device wafer is constructed to include a thermoelectromotive force generator and its wires, which are electrically connected to first-layer wires. By irradiation of the laser beam on the thermoelectromotive force generator, it is possible to detect a short-circuit defect, which lies between the first-layer wires. Further, it is possible to perform nondestructive inspection on a semiconductor integrated circuit, which is in an intermediate stage of manufacture before formation of bonding pads and which includes a closed circuit configured by a first-layer wire, including a thermoelectromotive force generating defect, a circuit via and an inspection via as well as a metal film, which is formed in a relatively broad range of a surface area and is used to form a second-layer wire.

9. 发明授权

US06320396B1 Parasitic MIM structural spot analysis method for semiconductor device and parasitic MIM structure spot analysis method for silicon semiconductor device 失效
标题翻译：半导体器件的寄生MIM结构点分析方法和硅半导体器件的寄生MIM结构点分析方法
公开(公告)号：US06320396B1
公开(公告)日：2001-11-20
申请号：US08906979
申请日：1997-08-06
申请人： Kiyoshi Nikawa
发明人： Kiyoshi Nikawa
IPC分类号： G01R31305
CPC分类号： H01L22/12 , G01R31/311 , H01L2924/0002 , H01L2924/00
摘要： Laser beam 104 having an irradiation power not less than 1 mW is irradiated onto an observed region, and a variation in a power source current 112 is detected. When the laser beam 104 is irradiated onto a parasitic insulating film 107 which is a parasitic MIM structural spot, the current 112 increases due to a temperature characteristic of the current 112 flowing through the parasitic insulating film 107, whereby the portion of the parasitic MIM structure can be detected. Moreover, laser beam 108 having a wavelength not less than 1.0 &mgr;m is irradiated onto an observed region from the back surface of the chip, and a variation in the power source current is detected. Light having a wavelength not less than 1.0 &mgr;m has the ability to travel through a Si substrate 110 so that the laser beam reaches a wiring portion. Irradiation of the laser beam onto the parasitic insulating film 107 having the parasitic MIM structure increases the current, so that the portion of the parasitic MIM structure can be detected.
摘要翻译：具有不小于1mW的照射功率的激光束104被照射到观察区域上，并检测电源电流112的变化。当激光束104照射到作为寄生MIM结构点的寄生绝缘膜107上时，电流112由于流过寄生绝缘膜107的电流112的温度特性而增加，由此寄生MIM结构的部分可以检测。此外，具有不小于1.0μm的波长的激光束108从芯片的背面照射到观察区域上，并检测电源电流的变化。具有不小于1.0μm的波长的光具有穿过Si衬底110的能力，使得激光束到达布线部分。将激光束照射到具有寄生MIM结构的寄生绝缘膜107上增加电流，从而可以检测寄生MIM结构的部分。

10. 发明授权

US6028435A Semiconductor device evaluation system using optical fiber 失效
标题翻译：使用光纤的半导体器件评估系统
公开(公告)号：US6028435A
公开(公告)日：2000-02-22
申请号：US821518
申请日：1997-03-21
申请人： Kiyoshi Nikawa
发明人： Kiyoshi Nikawa
IPC分类号： G01R31/302 , G01R31/265 , G01R31/311 , H01L21/66 , G01R31/28
CPC分类号： G01R31/311 , G01R31/2656
摘要： In a system for evaluating a semiconductor device, a laser beam generating unit generates a laser beam, and an optical fiber receives the laser beam to heat an area of the semiconductor device. A current deviation detector or a voltage deviation detector is connected to a terminal of the semiconductor device. As a result, the current deviation detector or the voltage deviation detector detects a current deviation or a voltage deviation at the terminal of the semiconductor device.
摘要翻译：在用于评估半导体器件的系统中，激光束产生单元产生激光束，并且光纤接收激光束以加热半导体器件的区域。电流偏差检测器或电压偏差检测器连接到半导体器件的端子。结果，电流偏差检测器或电压偏差检测器检测半导体器件的端子处的电流偏差或电压偏差。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式