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1. 发明授权

US06980010B2 Method and apparatus for inspecting wire breaking of integrated circuit 失效
标题翻译：用于检查集成电路断线的方法和装置
公开(公告)号：US06980010B2
公开(公告)日：2005-12-27
申请号：US10760549
申请日：2004-01-21
申请人： Masayoshi Tonouchi , Kodo Kawase , Tomoya Hirosumi , Ryoichi Fukusawa
发明人： Masayoshi Tonouchi , Kodo Kawase , Tomoya Hirosumi , Ryoichi Fukusawa
IPC分类号： G01R31/02 , G01R31/302 , G01R31/311 , H01L21/66
CPC分类号： G01R31/311
摘要： An apparatus that inspects wire breaking of a semiconductor integrated circuit includes a voltage applying device (12), a light pulse source (14), a scanning device (16), an electromagnetic wave detection device (18), and a wire breaking detection device (20). The voltage applying device (12) maintains a semiconductor integrated circuit in a state where a predetermined voltage is being applied thereto. The light pulse source (14) generates an ultrashort light pulse (2). The scanning device (16) two-dimensionally scans and irradiates the two-dimensional circuit of the semiconductor integrated circuit by using the ultrashort light pulse (2). The electromagnetic wave detection device (18) detects an electromagnetic wave (3) radiated from a position irradiated with the ultrashort light pulse on the semiconductor integrated circuit. The wire breaking detection device (20) detects wire breaking of the irradiated position based on presence and absence or intensity of the electromagnetic wave.
摘要翻译：检查半导体集成电路的断线的装置包括电压施加装置（12），光脉冲源（14），扫描装置（16），电磁波检测装置（18）和断线检测装置（20）。电压施加装置（12）将半导体集成电路保持在施加预定电压的状态。光脉冲源（14）产生超短光脉冲（2）。扫描装置（16）通过使用超短光脉冲（2）二维地扫描并照射半导体集成电路的二维电路。电磁波检测装置（18）检测从半导体集成电路上的超短光脉冲照射的位置辐射的电磁波（3）。断线检测装置（20）基于有无电磁波的强度来检测照射位置的断线。

2. 发明申请

US20060006886A1 Method and apparatus for diagnosing fault in semiconductor device 有权
标题翻译：用于诊断半导体器件故障的方法和装置
公开(公告)号：US20060006886A1
公开(公告)日：2006-01-12
申请号：US11038485
申请日：2005-01-21
申请人： Masatsugu Yamashita , Kodo Kawase , Masayoshi Tonouchi , Toshihiro Kiwa , Kiyoshi Nikawa
发明人： Masatsugu Yamashita , Kodo Kawase , Masayoshi Tonouchi , Toshihiro Kiwa , Kiyoshi Nikawa
IPC分类号： G01R31/305
CPC分类号： G01R31/311
摘要： An apparatus for diagnosing a fault in a semiconductor device includes an laser applying unit, a detection/conversion unit, and a fault diagnosis unit. The semiconductor device is held at a state where no bias voltage is applied thereto. The laser applying unit then applies a pulse laser beam having a predetermined wavelength to the semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam. The detection/conversion unit detects an electromagnetic wave generated from a laser applied position in the semiconductor device, and converts the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave. The fault diagnosis unit derives an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.
摘要翻译：用于诊断半导体器件中的故障的装置包括激光施加单元，检测/转换单元和故障诊断单元。半导体器件保持在不施加偏置电压的状态。激光施加单元然后将具有预定波长的脉冲激光束施加到半导体器件，以便用脉冲激光束对半导体器件进行二维扫描。检测/转换单元检测从半导体器件中的激光施加位置产生的电磁波，并将检测到的电磁波转换成对应于电磁波的电场的时变幅度的时变电压信号。故障诊断单元根据时变电压信号，在半导体装置中导出电场分布，对半导体装置进行故障诊断。

3. 发明授权

US08530868B2 Electromagnetic radiation generating element, electromagnetic radiation generating device, and method of generating electromagnetic radiation 有权
标题翻译：电磁辐射发生元件，电磁辐射发生装置和产生电磁辐射的方法
公开(公告)号：US08530868B2
公开(公告)日：2013-09-10
申请号：US13621051
申请日：2012-09-15
申请人： Hidetoshi Nakanishi , Masayoshi Tonouchi
发明人： Hidetoshi Nakanishi , Masayoshi Tonouchi
IPC分类号： G01N21/64
CPC分类号： G01N21/64 , G01N21/63 , G01N21/9501 , G01N21/956 , G02F1/0126 , G02F1/015 , G02F2001/0152 , G02F2201/122 , G02F2201/30 , G02F2202/12 , G02F2203/13
摘要： An electromagnetic radiation generating device is a device that generates electromagnetic wave pulses from a plane surface. The electromagnetic radiation generating device includes an electromagnetic radiation generating element, a light irradiating unit. The electromagnetic radiation generating element includes: a depletion layer forming body formed by stacking a p-type silicon layer and an n-type silicon layer in a planar pattern; a light receiving surface electrode formed on one surface of the depletion layer forming body, the light receiving surface electrode including a plurality of parallel electrode parts that are equally spaced while a forming distance is maintained between the parallel electrode parts, the forming distance corresponding to the wavelength of the electromagnetic wave pulses generated from the depletion layer forming body; and a rear surface electrode formed on the opposite surface of the depletion layer forming body.
摘要翻译：电磁辐射发生装置是从平面生成电磁波脉冲的装置。电磁辐射发生装置包括电磁辐射发生元件，光照射单元。电磁辐射发生元件包括：通过以平面图案堆叠p型硅层和n型硅层而形成的耗尽层形成体; 形成在耗尽层形成体的一个表面上的光接收表面电极，所述光接收表面电极包括多个平行电极部分，所述多个平行电极部分在所述平行电极部分之间保持形成距离的同时间隔，所述形成距离对应于从耗尽层形成体产生的电磁波脉冲的波长; 以及形成在耗尽层形成体的相对表面上的后表面电极。

4. 发明申请

US20070018634A1 Method and device for measuring electric field distribution of semiconductor device 有权
标题翻译：测量半导体器件电场分布的方法和装置
公开(公告)号：US20070018634A1
公开(公告)日：2007-01-25
申请号：US10569796
申请日：2004-08-25
申请人： Hideyuki Ohtake , Tomoya Hirosumi , Makoto Yoshida , Masayoshi Tonouchi
发明人： Hideyuki Ohtake , Tomoya Hirosumi , Makoto Yoshida , Masayoshi Tonouchi
IPC分类号： G01R31/00
CPC分类号： G01R31/311 , G01N21/9501 , G01N21/956 , G01R31/2656
摘要： It comprises a voltage-application apparatus 2 for applying a predetermined voltage to a semiconductor device 1, and holding it therein; a laser apparatus 3 for generating a laser beam 4 having a predetermined wavelength; an irradiation apparatus 5 for irradiating the laser beam 4 onto the two-dimensional circuit of the semiconductor device 1, which is held in the applied state, so as to scan it two-dimensionally; an electromagnetic-wave detection/conversion apparatus 6 for detecting an electromagnetic wave, which is radiated from the laser-beam irradiation position, and converting the electromagnetic wave into an electric-field signal, which changes temporally; and phase-judgement means 71, to which the temporally-changing electric-field signal output from the detection/conversion apparatus 6 is input, for judging the phase of the electric-field signal.
摘要翻译：它包括用于向半导体器件1施加预定电压并将其保持在其中的电压施加装置2; 用于产生具有预定波长的激光束4的激光装置3; 用于将激光束4照射到保持在施加状态的半导体器件1的二维电路上以便二维地扫描的照射装置5; 用于检测从激光束照射位置辐射的电磁波的电磁波检测/转换装置6，并将电磁波转换成瞬时变化的电场信号; 以及输入从检测/转换装置6输出的时间上变化的电场信号的相位判断装置71，用于判断电场信号的相位。

5. 发明授权

US4996191A Method for etching superconductor materials 失效
标题翻译：蚀刻超导体材料的方法
公开(公告)号：US4996191A
公开(公告)日：1991-02-26
申请号：US284662
申请日：1988-12-15
申请人： Takeshi Kobayashi , Masayoshi Tonouchi , Yoshiyuki Sakaguchi
发明人： Takeshi Kobayashi , Masayoshi Tonouchi , Yoshiyuki Sakaguchi
IPC分类号： C09K13/04 , C09K13/00 , H01L39/24
CPC分类号： C09K13/00 , H01L39/2467 , Y10S505/728
摘要： An etchant containing 1-hydroxy-ethane-1,1-diphosphonic acid is useful in etching Ba--Cu--O and Ca--Cu--O high-temperature superconductors.
摘要翻译：含有1-羟基 - 乙烷-1,1-二膦酸的蚀刻剂可用于蚀刻Ba-Cu-O和Ca-Cu-O高温超导体。

6. 发明授权

US08941824B2 Semiconductor inspection method and semiconductor inspection apparatus 有权
标题翻译：半导体检测方法和半导体检测装置
公开(公告)号：US08941824B2
公开(公告)日：2015-01-27
申请号：US13621038
申请日：2012-09-15
申请人： Hidetoshi Nakanishi , Masayoshi Tonouchi
发明人： Hidetoshi Nakanishi , Masayoshi Tonouchi
IPC分类号： G01N21/00 , G01N21/95 , G01N21/17 , G01R31/311 , G01N21/956
CPC分类号： G01N21/9501 , G01N21/1717 , G01N21/956 , G01R31/311
摘要： A semiconductor inspection apparatus (100) is an apparatus for inspecting a semiconductor device. The semiconductor inspection apparatus (100) includes a pulsed laser light source (14) for emitting pulsed laser light (2) toward a substrate (1) with a semiconductor device formed thereon, an electromagnetic wave pulse application part (18) for applying a reverses-biasing electromagnetic wave pulse (4) for applying a reverse bias to an application position (10) which receives the pulsed laser light (2), and a detection part (17) for detecting an electromagnetic wave pulse (3) emitted from the application position (10) in response to the application of the pulsed laser light (2).
摘要翻译：半导体检查装置（100）是用于检查半导体装置的装置。半导体检查装置（100）包括用于在其上形成有半导体器件的朝向衬底（1）发射脉冲激光（2）的脉冲激光源（14），用于施加反转的电磁波脉冲施加部（18）用于对接收脉冲激光（2）的施加位置（10）施加反向偏压的偏置电磁波脉冲（4）;以及用于检测从应用发射的电磁波脉冲（3）的检测部分（17）位置（10）响应于脉冲激光（2）的应用。

7. 发明授权

US08872114B2 Inspection apparatus and inspection method 有权
标题翻译：检验仪器和检验方法
公开(公告)号：US08872114B2
公开(公告)日：2014-10-28
申请号：US13494754
申请日：2012-06-12
申请人： Hidetoshi Nakanishi , Masayoshi Tonouchi , Iwao Kawayama
发明人： Hidetoshi Nakanishi , Masayoshi Tonouchi , Iwao Kawayama
IPC分类号： G01N21/35 , G01N21/95 , G01N21/956 , G01R31/26
CPC分类号： G01N21/3586 , G01N21/3563 , G01N21/9501 , G01N21/956 , H02S50/10
摘要： A technology of inspecting a photoexcited carrier generation area of a photo device in a non-contact manner is provided. An inspection apparatus inspects a photovoltaic cell panel in which the photo device is formed. The inspection apparatus includes an irradiation part that irradiates the photovoltaic cell panel with pulsed light from a light receiving surface side and a detecting part (detector) that detects electric field intensity of a terahertz wave pulse, which is generated according to the irradiation of the pulsed light.
摘要翻译：提供以非接触方式检查照相装置的光激发载波生成区域的技术。检查装置检查其中形成有照相装置的光电池面板。检查装置包括：照射部，其从受光面侧照射光电池面板的脉冲光;以及检测部（检测器），其检测根据脉冲的照射产生的太赫兹波脉冲的电场强度光。

8. 发明申请

US20130083319A1 SEMICONDUCTOR INSPECTION METHOD AND SEMICONDUCTOR INSPECTION APPARATUS 有权
标题翻译：半导体检测方法和半导体检测装置
公开(公告)号：US20130083319A1
公开(公告)日：2013-04-04
申请号：US13621038
申请日：2012-09-15
申请人： Hidetoshi NAKANISHI , Masayoshi Tonouchi
发明人： Hidetoshi NAKANISHI , Masayoshi Tonouchi
IPC分类号： G01N21/956
CPC分类号： G01N21/9501 , G01N21/1717 , G01N21/956 , G01R31/311
摘要： A semiconductor inspection apparatus (100) is an apparatus for inspecting a semiconductor device. The semiconductor inspection apparatus (100) includes a pulsed laser light source (14) for emitting pulsed laser light (2) toward a substrate (1) with a semiconductor device formed thereon, an electromagnetic wave pulse application part (18) for applying a reverses-biasing electromagnetic wave pulse (4) for applying a reverse bias to an application position (10) which receives the pulsed laser light (2), and a detection part (17) for detecting an electromagnetic wave pulse (3) emitted from the application position (10) in response to the application of the pulsed laser light (2).
摘要翻译：半导体检查装置（100）是用于检查半导体装置的装置。半导体检查装置（100）包括用于在其上形成有半导体器件的朝向衬底（1）发射脉冲激光（2）的脉冲激光源（14），用于施加反转的电磁波脉冲施加部（18）用于对接收脉冲激光（2）的施加位置（10）施加反向偏压的偏置电磁波脉冲（4）;以及用于检测从应用发射的电磁波脉冲（3）的检测部分（17）位置（10）响应于脉冲激光（2）的应用。

9. 发明申请

US20130015368A1 INSPECTION APPARATUS AND INSPECTION METHOD 有权
标题翻译：检查装置和检查方法
公开(公告)号：US20130015368A1
公开(公告)日：2013-01-17
申请号：US13494754
申请日：2012-06-12
申请人： Hidetoshi NAKANISHI , Masayoshi TONOUCHI , Iwao KAWAYAMA
发明人： Hidetoshi NAKANISHI , Masayoshi TONOUCHI , Iwao KAWAYAMA
IPC分类号： G01N21/64 , G01J3/443
CPC分类号： G01N21/3586 , G01N21/3563 , G01N21/9501 , G01N21/956 , H02S50/10
摘要： A technology of inspecting a photoexcited carrier generation area of a photo device in a non-contact manner is provided. An inspection apparatus inspects a photovoltaic cell panel in which the photo device is formed. The inspection apparatus includes an irradiation part that irradiates the photovoltaic cell panel with pulsed light from a light receiving surface side and a detecting part (detector) that detects electric field intensity of a terahertz wave pulse, which is generated according to the irradiation of the pulsed light.
摘要翻译：提供以非接触方式检查照相装置的光激发载波生成区域的技术。检查装置检查其中形成有照相装置的光电池面板。检查装置包括：照射部，其从受光面侧照射光电池面板的脉冲光;以及检测部（检测器），其检测根据脉冲的照射产生的太赫兹波脉冲的电场强度光。

10. 发明授权

US07466151B2 Electric-field distribution measurement method and apparatus for semiconductor device 有权
标题翻译：半导体器件的电场分布测量方法和装置
公开(公告)号：US07466151B2
公开(公告)日：2008-12-16
申请号：US10569796
申请日：2004-08-25
申请人： Hideyuki Ohtake , Tomoya Hirosumi , Makoto Yoshida , Masayoshi Tonouchi
发明人： Hideyuki Ohtake , Tomoya Hirosumi , Makoto Yoshida , Masayoshi Tonouchi
IPC分类号： G01R31/302
CPC分类号： G01R31/311 , G01N21/9501 , G01N21/956 , G01R31/2656
摘要： It comprises a voltage-application apparatus 2 for applying a predetermined voltage to a semiconductor device 1, and holding it therein; a laser apparatus 3 for generating a laser beam 4 having a predetermined wavelength; an irradiation apparatus 5 for irradiating the laser beam 4 onto the two-dimensional circuit of the semiconductor device 1, which is held in the applied state, so as to scan it two-dimensionally; an electromagnetic-wave detection/conversion apparatus 6 for detecting an electromagnetic wave, which is radiated from the laser-beam irradiation position, and converting the electromagnetic wave into an electric-field signal, which changes temporally; and phase-judgement means 71, to which the temporally-changing electric-field signal output from the detection/conversion apparatus 6 is input, for judging the phase of the electric-field signal.
摘要翻译：它包括用于向半导体器件1施加预定电压并将其保持在其中的电压施加装置2; 用于产生具有预定波长的激光束4的激光装置3; 用于将激光束4照射到保持在施加状态的半导体器件1的二维电路上以便二维地扫描的照射装置5; 用于检测从激光束照射位置辐射的电磁波的电磁波检测/转换装置6，并将电磁波转换成瞬时变化的电场信号; 以及输入从检测/转换装置6输出的时间上变化的电场信号的相位判断装置71，用于判断电场信号的相位。

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