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1. 发明授权

US06417014B1 Method and apparatus for reducing wafer to wafer deposition variation 有权
标题翻译：用于减小晶片到晶片沉积变化的方法和装置
公开(公告)号：US06417014B1
公开(公告)日：2002-07-09
申请号：US09421184
申请日：1999-10-19
申请人： Kin-Sang Lam , Sey-Ping Sun
发明人： Kin-Sang Lam , Sey-Ping Sun
IPC分类号： G01R3126
CPC分类号： H01L22/20 , Y10S414/135
摘要： A processing line includes a processing tool and an automatic process controller. The processing tool is adapted to deposit a layer of material on a semiconductor wafer based on an operating recipe. The automatic process controller is adapted to identify a post-idle set of wafers to be processed in the processing tool after an idle period, determine deposition times for wafers in the set of post-idle wafers, and modify the operating recipe of the processing tool for each of the wafers in the post-idle set based on the deposition times. A method for reducing wafer to wafer deposition variation includes designating a set of post-idle wafers; determining a deposition time for each of the wafers in the post-idle set, at least two of the deposition times being different; and depositing a layer on the wafers in the post-idle set based on the deposition times determined.
摘要翻译：处理线包括处理工具和自动过程控制器。该处理工具适于基于操作配方在半导体晶片上沉积材料层。自动过程控制器适于在空闲时段之后识别在处理工具中待处理的待处理晶片组，确定在一组后空闲晶片中的晶片的沉积时间，并修改处理工具的操作配方基于沉积时间对后置怠速组中的每个晶片进行。一种用于减少晶片到晶片沉积变化的方法包括指定一组后空闲晶片; 确定后置怠速组中每个晶片的沉积时间，至少两个沉积时间不同; 以及基于所确定的沉积时间，在后置怠速组中的晶片上沉积一层。

2. 发明授权

US5271817A Design for sputter targets to reduce defects in refractory metal films 失效
$Design for sputter targets to reduce defects in refractory metal films$
标题翻译：设计溅射靶，以减少难熔金属薄膜的缺陷
公开(公告)号：US5271817A
公开(公告)日：1993-12-21
申请号：US854513
申请日：1992-03-19
申请人： Hunter B. Brugge , Kin-Sang Lam
发明人： Hunter B. Brugge , Kin-Sang Lam
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： H01J37/3435 , C23C14/3407 , H01J37/3497
摘要： A sputter target assembly includes a main target plate formed of a refractory material, such as Ti/W, which provides a target surface which is bombarded by ions and from which is ejected refractory material for thin-film deposition. A removable center piece is formed of a refractory material and fits within a recess formed in the center region of the main target plate to provide a surface which is substantially coplanar with the target surface of the main target. The removable center piece is attached to the main target plate with a screw formed of a refractory material. The main target plate is bonded to a backing plate for cooling.
摘要翻译：溅射靶组件包括由诸如Ti / W的耐火材料形成的主靶板，其提供由离子轰击的靶表面，并从其中喷出耐火材料用于薄膜沉积。可拆卸的中心件由耐火材料形成并且装配在形成在主目标板的中心区域中的凹部中以提供与主要靶的目标表面基本上共面的表面。可拆卸中心件用由耐火材料形成的螺钉连接到主目标板上。主要目标板结合到背板进行冷却。

3. 发明授权

US06814837B1 Controlled gas supply line apparatus and process for infilm and onfilm defect reduction 失效
标题翻译：控制气体供应管线装置和过程，用于下沉和膜上缺陷减少
公开(公告)号：US06814837B1
公开(公告)日：2004-11-09
申请号：US09175930
申请日：1998-10-20
申请人： Kin-Sang Lam , Dennis C. Swartz , Roger Sorum
发明人： Kin-Sang Lam , Dennis C. Swartz , Roger Sorum
IPC分类号： C23C1434
CPC分类号： C23C16/45557 , C23C14/54 , Y10T137/7762 , Y10T137/777
摘要： According to one aspect of the disclosure, the present invention provides methods and arrangements for controlling supply process gas to a process chamber for use in the manufacturing industry. Methods include controlling the operation of a valve coupled to the supply process gas line in a way such that pressure bursts in the process chamber due to the operation of the valve are reduced, or even eliminated.
摘要翻译：根据本公开的一个方面，本发明提供了用于控制向制造业中使用的处理室供应工艺气体的方法和装置。方法包括以使得由于阀的操作而导致的处理室中的压力爆裂减少甚至消除的方式来控制与供给处理气体管线相连接的阀的操作。

4. 发明申请

US20090114542A1 PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING DEPOSITING A CONDUCTIVE LAYER OVER A SEED LAYER 审中-公开
标题翻译：形成电子设备的过程，包括在一个种子层上沉积导电层
公开(公告)号：US20090114542A1
公开(公告)日：2009-05-07
申请号：US11935544
申请日：2007-11-06
申请人： Sriranga S. Boyapati , Frank W. Smith , Kin-Sang Lam
发明人： Sriranga S. Boyapati , Frank W. Smith , Kin-Sang Lam
IPC分类号： C25D5/00
CPC分类号： C25D5/02 , C25D7/123 , H01L21/2885 , H01L21/76877
摘要： A process of forming an electronic device can include placing a seed layer into an electroplating solution within an electroplating tool. The electroplating tool can include a first electrode and a second electrode, wherein the first electrode is electrically connected to the seed layer. The process can also include depositing a first portion of a conductive layer using a first signal of a first type (e.g., direct current) between the first electrode and a second electrode, and depositing a second portion of the conductive layer over the first portion of the conductive layer, using a second signal of a second type (e.g., alternating current) between the first electrode and the second electrode of the electroplating tool.
摘要翻译：形成电子器件的过程可以包括将种子层放置在电镀工具内的电镀溶液中。电镀工具可以包括第一电极和第二电极，其中第一电极电连接到种子层。该方法还可以包括使用第一类型的第一信号（例如，直流）在第一电极和第二电极之间沉积导电层的第一部分，以及将导电层的第二部分沉积在第一部分的第一部分上所述导电层使用所述电镀工具的所述第一电极和所述第二电极之间的第二类型的第二信号（例如交流电）。

5. 发明申请

US20050221612A1 A LOW THERMAL BUDGET (MOL) LINER, A SEMICONDUCTOR DEVICE COMPRISING SAID LINER AND METHOD OF FORMING SAID SEMICONDUCTOR DEVICE 审中-公开
标题翻译：低热预算（MOL）衬垫，包含上述衬垫的半导体器件和形成半导体器件的方法
公开(公告)号：US20050221612A1
公开(公告)日：2005-10-06
申请号：US10708978
申请日：2004-04-05
申请人： Laura Brown , Fen Jamin , Kin-Sang Lam , Ying Li , Yun Wang , Horatio Wildman , Kwong Wong
发明人： Laura Brown , Fen Jamin , Kin-Sang Lam , Ying Li , Yun Wang , Horatio Wildman , Kwong Wong
IPC分类号： H01L21/336 , H01L21/425 , H01L21/768 , H01L21/8238 , H01L29/78
CPC分类号： H01L21/76846 , H01L21/76843 , H01L21/76856 , H01L21/823814 , H01L21/823835 , H01L21/823871 , H01L29/665 , H01L29/6656 , H01L29/78
摘要： The present invention is directed to a low thermal budget MOL liner to be used in the fabrication of a semiconductor device. The low thermal budget MOL liner of the present invention, which is formed by treating a titanium-deposited layer with an in-situ plasma nitridization step, results in a significantly improved high performance device as the need for the higher thermal annealing process presently used in the making of such devices can be avoided. The present invention is further directed to a method of making the resulting semiconductor device, as well as the semi-conductor device itself.
摘要翻译：本发明涉及一种用于制造半导体器件的低热量预算MOL衬垫。通过用原位等离子体氮化步骤处理钛沉积层形成的本发明的低热量预算MOL衬垫导致了显着改进的高性能器件，因为目前使用的较高热退火工艺可以避免这种装置的制造。本发明还涉及制造所得半导体器件以及半导体器件本身的方法。

6. 发明授权

US5282947A Magnet assembly for enhanced sputter target erosion 失效
标题翻译：用于增强溅射靶侵蚀的磁铁组件
公开(公告)号：US5282947A
公开(公告)日：1994-02-01
申请号：US929249
申请日：1992-08-13
申请人： Hunter B. Brugge , Kin-Sang Lam
发明人： Hunter B. Brugge , Kin-Sang Lam
IPC分类号： C23C14/35 , H01J37/34
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3408
摘要： The present invention concerns a magnet assembly for a sputtering chamber that allows for an even erosion of a target in the sputtering chamber so that atoms on the target are deposited on a wafer. This magnet assembly has a side magnet which is thinner than a center and ring magnet. This side magnet's centerplane is positioned above the centerplane of the other magnets. Additionally, this magnet assembly uses a center magnet in the range of substantially 350-450 Gauss and a side magnet of in the range of substantially 680-780 Gauss so that an asymmetrical magnetic field will be created which will cause an even erosion of the target and prevent re-deposition.
摘要翻译：本发明涉及一种用于溅射室的磁体组件，其允许溅射室中的靶的均匀侵蚀，使得靶上的原子沉积在晶片上。该磁体组件具有比中心和环形磁体薄的侧磁体。该侧面磁体的中心平面位于其他磁体的中心平面之上。此外，该磁体组件使用大致350-450高斯范围内的中心磁体和大致680-780高斯范围内的侧磁体，使得将产生不对称磁场，这将导致目标的均匀侵蚀并防止再沉积。

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