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1. 发明授权

US5271817A Design for sputter targets to reduce defects in refractory metal films 失效
$Design for sputter targets to reduce defects in refractory metal films$
标题翻译：设计溅射靶，以减少难熔金属薄膜的缺陷
公开(公告)号：US5271817A
公开(公告)日：1993-12-21
申请号：US854513
申请日：1992-03-19
申请人： Hunter B. Brugge , Kin-Sang Lam
发明人： Hunter B. Brugge , Kin-Sang Lam
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： H01J37/3435 , C23C14/3407 , H01J37/3497
摘要： A sputter target assembly includes a main target plate formed of a refractory material, such as Ti/W, which provides a target surface which is bombarded by ions and from which is ejected refractory material for thin-film deposition. A removable center piece is formed of a refractory material and fits within a recess formed in the center region of the main target plate to provide a surface which is substantially coplanar with the target surface of the main target. The removable center piece is attached to the main target plate with a screw formed of a refractory material. The main target plate is bonded to a backing plate for cooling.
摘要翻译：溅射靶组件包括由诸如Ti / W的耐火材料形成的主靶板，其提供由离子轰击的靶表面，并从其中喷出耐火材料用于薄膜沉积。可拆卸的中心件由耐火材料形成并且装配在形成在主目标板的中心区域中的凹部中以提供与主要靶的目标表面基本上共面的表面。可拆卸中心件用由耐火材料形成的螺钉连接到主目标板上。主要目标板结合到背板进行冷却。

2. 发明授权

US5282947A Magnet assembly for enhanced sputter target erosion 失效
标题翻译：用于增强溅射靶侵蚀的磁铁组件
公开(公告)号：US5282947A
公开(公告)日：1994-02-01
申请号：US929249
申请日：1992-08-13
申请人： Hunter B. Brugge , Kin-Sang Lam
发明人： Hunter B. Brugge , Kin-Sang Lam
IPC分类号： C23C14/35 , H01J37/34
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3408
摘要： The present invention concerns a magnet assembly for a sputtering chamber that allows for an even erosion of a target in the sputtering chamber so that atoms on the target are deposited on a wafer. This magnet assembly has a side magnet which is thinner than a center and ring magnet. This side magnet's centerplane is positioned above the centerplane of the other magnets. Additionally, this magnet assembly uses a center magnet in the range of substantially 350-450 Gauss and a side magnet of in the range of substantially 680-780 Gauss so that an asymmetrical magnetic field will be created which will cause an even erosion of the target and prevent re-deposition.
摘要翻译：本发明涉及一种用于溅射室的磁体组件，其允许溅射室中的靶的均匀侵蚀，使得靶上的原子沉积在晶片上。该磁体组件具有比中心和环形磁体薄的侧磁体。该侧面磁体的中心平面位于其他磁体的中心平面之上。此外，该磁体组件使用大致350-450高斯范围内的中心磁体和大致680-780高斯范围内的侧磁体，使得将产生不对称磁场，这将导致目标的均匀侵蚀并防止再沉积。

3. 发明授权

US5412250A Barrier enhancement at the salicide layer 失效
标题翻译：自杀层的阻隔增强
公开(公告)号：US5412250A
公开(公告)日：1995-05-02
申请号：US126353
申请日：1993-09-24
申请人： Hunter B. Brugge
发明人： Hunter B. Brugge
IPC分类号： H01L21/28 , H01L21/285 , H01L21/768 , H01L23/485 , H01L23/532 , H01L23/48
CPC分类号： H01L21/28518 , H01L23/485 , H01L23/53223 , H01L2924/0002 , Y10S438/952
摘要： An improved barrier, and a method for forming such a barrier, between a semiconductor substrate and a metallized contact. A first metallic layer is deposited over the substrate and the contact well formed therein. The first metallic layer is then exposed to a gas to allow the gas to stuff the first metallic layer, thereby improving the barrier characteristics of the first metallic layer. A second metallic layer is deposited over the first stuffed metallic layer. A third metallic layer is then deposited over the second metallic layer. An anti-reflective fourth layer of metal is then deposited over the third metallic layer. The exposure of the first metallic layer to a gas and all of the metal layer deposition steps are performed in a low-pressure environment. Therefore, the present invention eliminates the need for time-consuming pressure breaks. As a result, the throughput of the present invention is substantially increased over prior art barrier formation processes. Also, as a result of subsequent processing steps required in the formation of semiconductor devices, the portions of the first metallic layer which are present outside of the contact well are removed. The remaining portion of the first metallic layer forms a self-aligned silicide within the contact well. Thus, the present invention eliminates the need for a separate etch step to remove unwanted portions of the first metallic layer, and also provides a self-aligned silicide without requiring a separate heating or sinter step.
摘要翻译：在半导体衬底和金属化接触之间形成这种阻挡层的改进的屏障和方法。第一金属层沉积在衬底上并且其中形成接触阱。然后将第一金属层暴露于气体以允许气体填充第一金属层，从而改善第一金属层的阻挡特性。在第一填充金属层上沉积第二金属层。然后在第二金属层上沉积第三金属层。然后在第三金属层上沉积抗反射第四层金属。第一金属层暴露于气体和所有金属层沉积步骤都是在低压环境下进行的。因此，本发明不需要耗费时间的压力断裂。因此，与现有技术的阻挡层形成工艺相比，本发明的生产量显着增加。另外，作为形成半导体器件所需的后续处理步骤的结果，除去存在于接触阱外部的第一金属层的部分。第一金属层的剩余部分在接触阱内形成自对准的硅化物。因此，本发明不需要单独的蚀刻步骤来去除第一金属层的不期望的部分，并且还提供自对准的硅化物，而不需要单独的加热或烧结步骤。

4. 发明授权

US5493132A Integrated circuit contact barrier formation with ion implant 失效
标题翻译：具有离子注入的集成电路接触屏障形成
公开(公告)号：US5493132A
公开(公告)日：1996-02-20
申请号：US394221
申请日：1995-02-24
申请人： Hunter B. Brugge , Kuang-Yeh Chang , Felix Fujishiro , Chang-Ou Lee , Walter D. Parmantie
发明人： Hunter B. Brugge , Kuang-Yeh Chang , Felix Fujishiro , Chang-Ou Lee , Walter D. Parmantie
IPC分类号： H01L21/285 , H01L21/768 , H01L33/00
CPC分类号： H01L21/76895 , H01L21/28518 , H01L21/28568 , H01L21/76843 , H01L21/76855 , H01L21/76859
摘要： A titanium-tungsten barrier layer is sputtered after active areas of a CMOS structure are exposed. An ion implant through the barrier layer and into the active areas disrupts the boundaries between the barrier layer and the underlying active areas. The implant can involve argon or, alternatively, silicon. The resulting structure is annealed. A conductor layer of an aluminum-copper alloy is deposited. An antireflection coating of TiW is deposited. The three-layer structure is then photolithographically patterned to define contacts and local interconnects. The ion implant before anneal results in less contact resistance, which is particularly critical for the barrier layer boundary with positively doped active areas.
摘要翻译：在CMOS结构的有源区域暴露之后溅射钛 - 钨阻挡层。穿过阻挡层并进入有源区域的离子注入破坏了阻挡层和下面的有效区域之间的边界。植入物可以包括氩或者替代地，硅。所得结构退火。沉积铝 - 铜合金的导体层。沉积TiW的抗反射涂层。然后将三层结构光刻图案化以限定接触和局部互连。退火之前的离子注入导致更小的接触电阻，这对于具有正掺杂有源区的势垒层边界是特别关键的。

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