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1. 发明授权

US06589350B1 Vacuum processing chamber with controlled gas supply valve 失效
标题翻译：具有可控气体供应阀的真空处理室
公开(公告)号：US06589350B1
公开(公告)日：2003-07-08
申请号：US09658044
申请日：2000-09-08
申请人： Dennis C. Swartz
发明人： Dennis C. Swartz
IPC分类号： C23C1600
CPC分类号： C23C16/45561 , C23C16/45557 , C23C16/52 , H01J37/3244 , Y10S137/906 , Y10T137/86389
摘要： An apparatus for and a method of introducing a gas into a vacuum processing chamber are provided. In one aspect, a processing apparatus is provided that includes a vacuum processing chamber, a first source of gas coupled to the vacuum processing chamber, and a fluid actuated valve for regulating the flow of the gas from the first source of gas to the vacuum processing chamber. The fluid actuated valve is operable to open in response to a flow of an actuating fluid and has a minimum valve opening pressure. A valve is provided for enabling the actuating fluid to flow to the fluid actuated valve. A controller is provided for selectively modulating the flow of the actuating fluid to the fluid actuated valve whereby the pressure of the actuating fluid is increased incrementally from an initial pressure to at least the minimum valve opening pressure. The apparatus reduces the risk of troublesome gas bursts in vacuum processing chambers.
摘要翻译：提供了一种将气体引入真空处理室的装置和方法。在一个方面，提供了一种处理装置，其包括真空处理室，耦合到真空处理室的第一气体源和用于调节气体从第一气体源流到真空处理的流体致动阀房间。流体致动阀可操作以响应于致动流体的流动而打开并且具有最小的阀打开压力。提供一个阀，用于使致动流体能够流到流体致动的阀。提供控制器用于选择性地将致动流体的流动调节到流体致动阀，由此致动流体的压力从初始压力增加到至少最小阀打开压力。该装置降低了在真空处理室中出现麻烦的气体爆裂的风险。

2. 发明授权

US06270580B1 Modified material deposition sequence for reduced detect densities in semiconductor manufacturing 有权
公开(公告)号：US06270580B1
公开(公告)日：2001-08-07
申请号：US09291138
申请日：1999-04-12
申请人： Lan Vu , Dennis C. Swartz , Jeff Watts
发明人： Lan Vu , Dennis C. Swartz , Jeff Watts
IPC分类号： C23C1600
摘要： A method and apparatus for forming high-quality deposited material layers in semiconductor manufacturing are provided. In the method, the initial stages of a deposition are performed with no current flowing through substrate heater filaments. Current is restored to the heater filaments when needed to maintain the substrate within an acceptable range around a target or setpoint temperature. When an on/off temperature controller is used, the method may be implemented without disturbing the normal operation of the controller, by monitoring the heater filament current and beginning a deposition just after the current has been turned off by the controller. Current may also be removed from the heater filaments at the end of the deposition, so that concentrations of deposition species may equilibrate without the presence of heater currents. Performing as much of the deposition as possible with the substrate heater current off is believed to reduce defect formation which may be associated with magnetic fields and outgassing resulting from heater filament operation. A substrate heater design is provided in which heater filaments are eliminated and the substrate is heated using a heated, circulating fluid.

3. 发明授权

US5528226A Apparatus and method for controlling the burn-off operation of a gas in a semiconductor wafer fabrication furnace 失效
标题翻译：用于控制半导体晶片制造炉中的气体的燃尽操作的装置和方法
公开(公告)号：US5528226A
公开(公告)日：1996-06-18
申请号：US265038
申请日：1994-06-24
申请人： William R. Brown , Dennis C. Swartz , Donald L. Friede
发明人： William R. Brown , Dennis C. Swartz , Donald L. Friede
IPC分类号： F23N5/24 , G08B21/00
CPC分类号： F23N5/245
摘要： An apparatus and method for monitoring temperature and current in a gas ignition chamber by monitoring temperature in the gas ignition chamber, monitoring current flowing through first and second ignitors housed in the gas ignition chamber, comparing the temperature of the gas ignition chamber to a predetermined temperature, comparing the current flowing through the first ignitor to a first predetermined current, comparing the current flowing through the second ignitor to a second predetermined current, inactivating the first ignitor and activating the second ignitor whenever the current through the first ignitor becomes less than the first predetermined current, and sounding an audible alarm whenever the current through said second ignitor becomes less than the second predetermined current or whenever the temperature is below the predetermined temperature.
摘要翻译：一种用于通过监测气体点火室中的温度来监测气体点火室中的温度和电流的装置和方法，监测流过容纳在气体点燃室中的第一和第二点火器的电流，将气体点火室的温度与预定温度将流经所述第一点火器的电流与第一预定电流进行比较，将流过所述第二点火器的电流与第二预定电流进行比较，使每当所述第一点火器的电流变得小于所述第一点火器时，使所述第一点火器失活，并启动所述第二点火器每当通过所述第二点火器的电流变得小于第二预定电流或每当温度低于预定温度时，就发出可听见的报警声。

4. 发明授权

US5782980A Low pressure chemical vapor deposition apparatus including a process gas heating subsystem 失效
标题翻译：低压化学气相沉积设备包括工艺气体加热子系统
公开(公告)号：US5782980A
公开(公告)日：1998-07-21
申请号：US645619
申请日：1996-05-14
申请人： Michael B. Allen , Dennis C. Swartz , Patrick B. Lee
发明人： Michael B. Allen , Dennis C. Swartz , Patrick B. Lee
IPC分类号： C23C16/44 , C23C16/452 , C23C16/00
CPC分类号： C23C16/4401 , C23C16/452
摘要： A low-pressure CVD apparatus is presented including one or more gas heating subsystems which heat process gases prior to their introduction into a reaction chamber of the low-pressure CVD apparatus. As a result, thermal expansions and contractions of the walls of the reaction chamber are reduced, along with the tendency of small particles of deposits on the inner walls of the reaction chamber to flake off. Fewer loose particulates created within the reaction chamber results in a reduction in the number of particulates adhering to surfaces of processed silicon wafers. Each gas heating subsystem includes a heating element thermally coupled to a gas feed line and to a process gas flowing within the gas feed line. Each gas heating subsystem also preferably includes a thermal feedback temperature control mechanism including a temperature sensor and a temperature control unit. The temperature sensor senses the temperature of the heated flow of process gas and produces a corresponding temperature signal. The temperature control unit is coupled to receive the temperature signal from the temperature sensor and controls the temperature of the heating element in response to the temperature signal. The temperature of the process gas entering the reaction chamber may thus be controllably increased.
摘要翻译：提出了一种低压CVD装置，其包括一个或多个气体加热子系统，其在将它们引入低压CVD装置的反应室之前对其进行加热处理。结果，反应室的壁的热膨胀和收缩减小，同时反应室内壁上的小颗粒沉积物的趋势被剥离。在反应室内产生的较少松散的颗粒导致附着在已加工的硅晶片的表面上的微粒的数量的减少。每个气体加热子系统包括热耦合到气体供给管线和在气体供给管线内流动的工艺气体的加热元件。每个气体加热子系统还优选地包括包括温度传感器和温度控制单元的热反馈温度控制机构。温度传感器检测加工气体的加热流的温度并产生相应的温度信号。温度控制单元耦合以接收来自温度传感器的温度信号，并响应于温度信号控制加热元件的温度。因此可以可控地增加进入反应室的工艺气体的温度。

5. 发明授权

US06814837B1 Controlled gas supply line apparatus and process for infilm and onfilm defect reduction 失效
标题翻译：控制气体供应管线装置和过程，用于下沉和膜上缺陷减少
公开(公告)号：US06814837B1
公开(公告)日：2004-11-09
申请号：US09175930
申请日：1998-10-20
申请人： Kin-Sang Lam , Dennis C. Swartz , Roger Sorum
发明人： Kin-Sang Lam , Dennis C. Swartz , Roger Sorum
IPC分类号： C23C1434
CPC分类号： C23C16/45557 , C23C14/54 , Y10T137/7762 , Y10T137/777
摘要： According to one aspect of the disclosure, the present invention provides methods and arrangements for controlling supply process gas to a process chamber for use in the manufacturing industry. Methods include controlling the operation of a valve coupled to the supply process gas line in a way such that pressure bursts in the process chamber due to the operation of the valve are reduced, or even eliminated.
摘要翻译：根据本公开的一个方面，本发明提供了用于控制向制造业中使用的处理室供应工艺气体的方法和装置。方法包括以使得由于阀的操作而导致的处理室中的压力爆裂减少甚至消除的方式来控制与供给处理气体管线相连接的阀的操作。

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