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    • 8. 发明授权
    • Method of forming a cover cap for semiconductor wafer devices
    • 形成用于半导体晶片装置的盖帽的方法
    • US06352935B1
    • 2002-03-05
    • US09484991
    • 2000-01-18
    • David J. CollinsCraig E. CoreLawrence E. FeltonJing Luo
    • David J. CollinsCraig E. CoreLawrence E. FeltonJing Luo
    • H01L21302
    • H01L21/50H01L23/10H01L2224/48091H01L2224/48247H01L2924/00014
    • A method for capping active areas of a semiconductor wafer uses photolithography to define areas of sealant on the cap wafer to thereby reduce the amount of space required for attaching the cap wafer to the semiconductor wafer carrying active areas to be capped. Using photolithography in this manner increases the amount of space on the semiconductor wafer that can be used to form active areas which, in turn, improves the density of active area on the semiconductor wafer. In one embodiment, the method includes the steps of applying a photoimageable layer, photoimaging the photoimageable layer to define a pattern including remaining regions of the photoimageable layer and removed regions of the photoimageable layer, and using the pattern to define the sealant regions on the semiconductor wafer. The method may further include one or more steps, such as applying sealant to the sealant regions defined by the pattern, curing the sealant, removing the remaining regions after applying the sealant to the sealant regions, removing excess sealant not within the sealant regions, and using the sealant material to form at least one seal around at least one active area formed on the second semiconductor substrate.
    • 用于封盖半导体晶片的有源区域的方法使用光刻法来限定盖晶片上的密封剂的面积,从而减少将盖晶片附接到承载要被封盖的有源区域的半导体晶片所需的空间量。 以这种方式使用光刻增加了可用于形成有源区域的半导体晶片上的空间量,这又提高了半导体晶片上的有效面积的密度。 在一个实施例中,该方法包括以下步骤:应用可光成像层,对可光成像层进行成像,以定义包括可光成像层的剩余区域和去除了可光成像层的区域的图案,并且使用图案来限定半导体上的密封剂区域 晶圆。 该方法还可以包括一个或多个步骤,例如将密封剂施加到由图案限定的密封剂区域,固化密封剂,在将密封剂施加到密封剂区域之后移除其余区域,去除密封剂区域内的多余的密封剂,以及 使用密封剂材料在形成在第二半导体衬底上的至少一个有效区域周围形成至少一个密封件。