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1. 发明申请

US20100285628A1 Micromachined microphone and multisensor and method for producing same 有权
公开(公告)号：US20100285628A1
公开(公告)日：2010-11-11
申请号：US12804213
申请日：2010-07-16
申请人： John R. Martin , Timothy J. Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
发明人： John R. Martin , Timothy J. Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
IPC分类号： H01L21/02 , H01L21/84
CPC分类号： H04R3/00 , B81B2201/0235 , B81B2201/0257 , B81C1/00182 , H01L2224/48137 , H01L2224/49109 , H01L2224/73265 , H01L2924/15151 , H04R19/005 , H04R2499/11
摘要： A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.

2. 发明授权

US07825484B2 Micromachined microphone and multisensor and method for producing same 有权
标题翻译：微加工麦克风和多传感器及其制造方法
公开(公告)号：US07825484B2
公开(公告)日：2010-11-02
申请号：US11113925
申请日：2005-04-25
申请人： John R. Martin , Timothy J. Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
发明人： John R. Martin , Timothy J. Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
IPC分类号： H01L29/82
CPC分类号： H04R3/00 , B81B2201/0235 , B81B2201/0257 , B81C1/00182 , H01L2224/48137 , H01L2224/49109 , H01L2224/73265 , H01L2924/15151 , H04R19/005 , H04R2499/11
摘要： A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.
摘要翻译：微机械麦克风由硅或绝缘体上硅（SOI）晶片形成。用于麦克风的固定感测电极由晶片的顶部硅层形成。通过沉积形成结构的至少一个氧化物层，然后通过形成的沟槽从顶部硅层的背面去除结构物下面的氧化物的一部分，形成在顶部硅层前侧上的各种多晶硅麦克风结构通过顶层硅层。沟槽允许声波从顶部硅层的背面到达隔膜。在SOI晶片中，通过底部硅层和中间氧化物层形成空腔，以露出沟槽，以去除氧化物并允许声波到达隔膜。惯性传感器可以形成在相同的晶片上，其中各种惯性传感器结构基本上在同一时间形成并且使用与对应的麦克风结构基本上相同的过程。

3. 发明授权

US07138694B2 Single crystal silicon sensor with additional layer and method of producing the same 有权
公开(公告)号：US07138694B2
公开(公告)日：2006-11-21
申请号：US10791638
申请日：2004-03-02
申请人： Thomas Kieran Nunan , Timothy J. Brosnihan
发明人： Thomas Kieran Nunan , Timothy J. Brosnihan
IPC分类号： H01L29/82
CPC分类号： G01P15/0802 , G01P15/125
摘要： A SOI-based MEMS device has a base layer, a device layer, and an insulator layer between the base layer and the device layer. The device also has a deposited layer having a portion that is spaced from the device layer. The device layer is between the insulator layer and the deposited layer.

4. 发明授权

US08507913B2 Method of bonding wafers 有权
标题翻译：接合晶片的方法
公开(公告)号：US08507913B2
公开(公告)日：2013-08-13
申请号：US12893587
申请日：2010-09-29
申请人： Thomas Kieran Nunan , Changhan Yun , Christine H. Tsau
发明人： Thomas Kieran Nunan , Changhan Yun , Christine H. Tsau
IPC分类号： H01L31/00
CPC分类号： H01L23/10 , B81C1/00269 , B81C2203/019 , H01L21/50 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method of bonding wafers with an aluminum-germanium bond includes forming an aluminum layer on a first wafer, and a germanium layer on a second wafer, and implanting the germanium layer with non-germanium atoms prior to forming a eutectic bond at the aluminum-germanium interface. The wafers are aligned to a desired orientation and the two layers are held in contact with one another. The aluminum-germanium interface is heated to a temperature that allows the interface of the layers to melt, thus forming a bond. A portions of the germanium layer may be removed from the second wafer to allow infrared radiation to pass through the second wafer to facilitate wafer alignment.
摘要翻译：用铝 - 锗键接合晶片的方法包括在第一晶片上形成铝层，在第二晶片上形成锗层，并在形成铝 - 锗之前的共晶键之前将锗层注入非锗原子，锗界面。将晶片与期望的取向对准，并且两层保持彼此接触。铝 - 锗界面被加热到允许层的界面熔化的温度，从而形成结合。可以从第二晶片去除锗层的一部分，以允许红外辐射穿过第二晶片以促进晶片对准。

5. 发明授权

US08507306B2 Reduced stiction MEMS device with exposed silicon carbide 有权
标题翻译：具有暴露碳化硅的减少的静摩擦MEMS器件
公开(公告)号：US08507306B2
公开(公告)日：2013-08-13
申请号：US12891173
申请日：2010-09-27
申请人： Li Chen , Christine H. Tsau , Thomas Kieran Nunan , Kuang L. Yang
发明人： Li Chen , Christine H. Tsau , Thomas Kieran Nunan , Kuang L. Yang
IPC分类号： H01L21/00
CPC分类号： B81B3/0005
摘要： A MEMS device has a first member that is movable relative to a second member. At least one of the first member and the second member has exposed silicon carbide with a water contact angle of greater than about 70 degrees.
摘要翻译： MEMS器件具有可相对于第二构件移动的第一构件。第一构件和第二构件中的至少一个具有大于约70度的水接触角的暴露的碳化硅。

6. 发明申请

US20110095384A1 Single Crystal Silicon Sensor with Additional Layer and Method of Producing the Same 有权
标题翻译：具有附加层的单晶硅传感器及其制造方法
公开(公告)号：US20110095384A1
公开(公告)日：2011-04-28
申请号：US12985700
申请日：2011-01-06
申请人： Thomas Kieran Nunan , Timothy J. Brosnihan
发明人： Thomas Kieran Nunan , Timothy J. Brosnihan
IPC分类号： H01L29/84 , H01L21/04
CPC分类号： G01P15/0802 , G01P15/125
摘要： A SOI-based MEMS device has a base layer, a device layer, and an insulator layer between the base layer and the device layer. The device also has a deposited layer having a portion that is spaced from the device layer. The device layer is between the insulator layer and the deposited layer.
摘要翻译：基于SOI的MEMS器件在基极层和器件层之间具有基极层，器件层和绝缘体层。该装置还具有具有与器件层间隔开的部分的沉积层。器件层位于绝缘体层和沉积层之间。

7. 发明授权

US06936918B2 MEMS device with conductive path through substrate 有权
标题翻译：具有导电通路的MEMS器件通过衬底
公开(公告)号：US06936918B2
公开(公告)日：2005-08-30
申请号：US10827680
申请日：2004-04-19
申请人： Kieran P. Harney , Lawrence E. Felton , Thomas Kieran Nunan , Susan A. Alie , Bruce Wachtmann
发明人： Kieran P. Harney , Lawrence E. Felton , Thomas Kieran Nunan , Susan A. Alie , Bruce Wachtmann
IPC分类号： B81B7/00 , B81B7/02 , H01L23/12
CPC分类号： B81B7/007 , B81B2201/0235 , B81C2203/019 , H01L2224/16225 , H01L2924/1461
摘要： A MEMS device has at least one conductive path extending from the top facing side of its substrate (having MEMS structure) to the bottom side of the noted substrate. The at least one conductive path extends through the substrate as noted to electrically connect the bottom facing side with the MEMS structure.
摘要翻译： MEMS器件具有从其衬底（具有MEMS结构）的顶面侧延伸到所述衬底的底侧的至少一个导电路径。所述至少一个导电路径延伸穿过衬底，如将所述底面朝向侧面与MEMS结构电连接。

8. 发明授权

US08389314B2 MEMS device with roughened surface and method of producing the same 有权
标题翻译：具有粗糙表面的MEMS器件及其制造方法
公开(公告)号：US08389314B2
公开(公告)日：2013-03-05
申请号：US11538281
申请日：2006-10-03
申请人： John R. Martin , Thomas D. Chen , Jinbo Kuang , Thomas Kieran Nunan , Xin Zhang
发明人： John R. Martin , Thomas D. Chen , Jinbo Kuang , Thomas Kieran Nunan , Xin Zhang
IPC分类号： H01L21/00
CPC分类号： B81B3/001 , B81B2201/0257 , B81C2201/115
摘要： A method of producing a MEMS device provides a MEMS apparatus having released structure. The MEMS apparatus is formed at least in part from an SOI wafer having a first layer, a second layer spaced from the first layer, and an insulator layer between the first layer and second layer. The first layer has a top surface, while the second layer has a bottom surface facing the top surface. After providing the MEMS apparatus, the method increases the roughness of at least the top surface of the first layer or the bottom surface of the second layer.
摘要翻译：制造MEMS器件的方法提供了具有释放结构的MEMS装置。 MEMS器件至少部分地由具有第一层，与第一层隔开的第二层和在第一层和第二层之间的绝缘体层的SOI晶片形成。第一层具有顶表面，而第二层具有面向顶表面的底表面。在提供MEMS装置之后，该方法增加了至少第一层的顶表面或第二层的底表面的粗糙度。

9. 发明授权

US08129803B2 Micromachined microphone and multisensor and method for producing same 有权
标题翻译：微加工麦克风和多传感器及其制造方法
公开(公告)号：US08129803B2
公开(公告)日：2012-03-06
申请号：US12804213
申请日：2010-07-16
申请人： John R. Martin , Timothy J. Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
发明人： John R. Martin , Timothy J. Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
IPC分类号： H01L21/02 , H01L21/84
CPC分类号： H04R3/00 , B81B2201/0235 , B81B2201/0257 , B81C1/00182 , H01L2224/48137 , H01L2224/49109 , H01L2224/73265 , H01L2924/15151 , H04R19/005 , H04R2499/11
摘要： A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.
摘要翻译：微机械麦克风由硅或绝缘体上硅（SOI）晶片形成。用于麦克风的固定感测电极由晶片的顶部硅层形成。通过沉积形成结构的至少一个氧化物层，然后通过形成的沟槽从顶部硅层的背面去除结构物下面的氧化物的一部分，形成在顶部硅层前侧上的各种多晶硅麦克风结构通过顶层硅层。沟槽允许声波从顶部硅层的背面到达隔膜。在SOI晶片中，通过底部硅层和中间氧化物层形成空腔，以露出沟槽，以去除氧化物并允许声波到达隔膜。惯性传感器可以形成在相同的晶片上，其中各种惯性传感器结构基本上在同一时间形成并且使用与对应的麦克风结构基本上相同的过程。

10. 发明授权

US07754617B2 Polysilicon deposition and anneal process enabling thick polysilicon films for MEMS applications 有权
标题翻译：多晶硅沉积和退火工艺可实现MEMS应用的厚多晶硅膜
公开(公告)号：US07754617B2
公开(公告)日：2010-07-13
申请号：US12098052
申请日：2008-04-04
申请人： Thomas Kieran Nunan
发明人： Thomas Kieran Nunan
IPC分类号： H01L21/302
CPC分类号： B81C1/00666 , B81B2201/025 , B81C2201/0164 , B81C2201/0167 , B81C2201/0169
摘要： A method of forming a thick polysilicon layer for a MEMS inertial sensor includes forming a first amorphous polysilicon film on a substrate in an elevated temperature environment for a period of time such that a portion of the amorphous polysilicon film undergoes crystallization and grain growth at least near the substrate. The method also includes forming an oxide layer on the first amorphous polysilicon film, annealing the first amorphous polysilicon film in an environment of about 1100° C. or greater to produce a crystalline film, and removing the oxide layer. Lastly, the method includes forming a second amorphous polysilicon film on a surface of the crystalline polysilicon film in an elevated temperature environment for a period of time such that a portion of the second amorphous polysilicon film undergoes crystallization and grain growth at least near the surface of the crystalline polysilicon film.
摘要翻译：形成用于MEMS惯性传感器的厚多晶硅层的方法包括在高温环境中在衬底上形成第一非晶多晶硅膜一段时间，使得非晶多晶硅膜的一部分经历结晶并且晶粒生长至少接近底物。该方法还包括在第一非晶多晶硅膜上形成氧化物层，在约1100℃或更高的环境中退火第一非晶多晶硅膜以产生结晶膜，并除去氧化物层。最后，该方法包括在高温环境下在晶体多晶硅膜的表面上形成第二非晶多晶硅膜一段时间，使得第二非晶多晶硅膜的一部分在至少在表面附近发生结晶和晶粒生长晶体多晶硅膜。

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