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    • 6. 发明授权
    • Mask etch processing apparatus
    • 掩模蚀刻处理装置
    • US07128806B2
    • 2006-10-31
    • US10689783
    • 2003-10-21
    • Khiem NguyenPeter SatitpunwaychaAlfred W. Mak
    • Khiem NguyenPeter SatitpunwaychaAlfred W. Mak
    • H01L21/306C23F1/00
    • H01L21/68707H01J37/321H01J37/32623H01L21/68735
    • Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising-a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.
    • 提供了用于在半导体晶片处理系统中支撑和转移衬底的方法和装置。 在一个方面,提供了一种用于支撑衬底的装置,包括:盖环,包括具有设置在其上的孔的基部,所述基部具有上表面和邻近所述孔设置的一个或多个凸起表面,其中所述凸起表面包括一个或 邻近孔的第一衬底支撑构件和设置在盖环上的捕获环,捕获环包括半圆环形环,其具有对应于盖环的孔的内周边和一个或多个第二衬底 支撑构件,其布置在内周边上并且适于接收基底,其中所述捕获环适于与所述盖环配合并在所述盖环上形成一个相邻的凸起表面。
    • 8. 发明申请
    • Integrated metrology chamber for transparent substrates
    • 用于透明基板的集成计量室
    • US20060154388A1
    • 2006-07-13
    • US11031400
    • 2005-01-08
    • Richard LewingtonCorey CollardScott AndersonKhiem Nguyen
    • Richard LewingtonCorey CollardScott AndersonKhiem Nguyen
    • H01L21/66C23C14/00
    • G03F1/30H01L21/31116H01L21/67742
    • The embodiments of the invention relate to a method and apparatus for measuring the etch depth between etching for an alternate phase shift photomask in a semiconductor photomask processing system. The apparatus for measuring the etch depth of a substrate in an etch processing system comprises a measurement cell coupled to a mainframe of the etch processing system, and an etch depth measurement tool coupled to the bottom of the measurement cell, wherein an opening at the bottom of the measurement cell allows light beams to pass between the etch depth measurement tool and the substrate. The embodiments of the invention also relate to the method of preparing an alternate phase shift mask by partially etching the quartz substrate to an initial etch depth, followed by measuring the etch depth with an integrated measurement tool. The substrate is then etched and measured repeatedly until the targeted etch depth has been reached.
    • 本发明的实施例涉及一种用于测量半导体光掩模处理系统中的替代相移光掩模的蚀刻之间的蚀刻深度的方法和装置。 用于在蚀刻处理系统中测量衬底的蚀刻深度的装置包括耦合到蚀刻处理系统的主机的测量单元和耦合到测量单元的底部的蚀刻深度测量工具,其中底部的开口 的测量单元允许光束在蚀刻深度测量工具和衬底之间通过。 本发明的实施例还涉及通过将石英衬底部分蚀刻到初始蚀刻深度,然后用集成测量工具测量蚀刻深度来制备交替相移掩模的方法。 然后重复蚀刻和测量衬底,直到达到目标蚀刻深度。
    • 9. 发明授权
    • Mask etch processing apparatus
    • 掩模蚀刻处理装置
    • US07879151B2
    • 2011-02-01
    • US11530676
    • 2006-09-11
    • Khiem NguyenPeter SatitpunwaychaAlfred W. Mak
    • Khiem NguyenPeter SatitpunwaychaAlfred W. Mak
    • C23C16/00C23C16/458H01L21/306
    • H01L21/68707H01J37/321H01J37/32623H01L21/68735
    • Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.
    • 提供了用于在半导体晶片处理系统中支撑和转移衬底的方法和装置。 在一个方面,提供了一种用于支撑衬底的装置,其包括盖环,该盖环包括其上设置有孔的基部,所述基部具有上表面和邻近所述孔布置的一个或多个凸起表面,其中所述凸起表面包括一个或多个 第一衬底支撑构件邻近孔的边缘设置,并且捕获环设置在覆盖环上,捕获环包括半圆环形环,其具有对应于盖环的孔的内周边和一个或多个第二衬底支撑件 设置在内周上并适于接收基底的构件,其中捕获环适于与盖环配合并在盖环上形成一个连续的凸起表面。