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1. 发明申请

US20070242179A1 Liquid crystal display and manufacturing method thereof 有权
标题翻译：液晶显示及其制造方法
公开(公告)号：US20070242179A1
公开(公告)日：2007-10-18
申请号：US11515566
申请日：2006-09-05
申请人： Keun-Kyu Song , Seung-Hwan Cho , Yong-Uk Lee
发明人： Keun-Kyu Song , Seung-Hwan Cho , Yong-Uk Lee
IPC分类号： G02F1/136
CPC分类号： H01L51/055 , G02F1/1368
摘要： A liquid crystal display includes a data line and a gate line including a gate electrode on a first substrate, a first partition on the gate and data lines and including a first opening exposing the gate electrode, a gate insulator in the first opening, a source electrode on the gate insulator, a pixel electrode including a drain electrode facing the source electrode and on the gate insulator, a second partition on the source and pixel electrodes and including a second opening exposing portions of the source and drain electrodes, an organic semiconductor in the second opening, a second substrate facing the first substrate and a liquid crystal layer between the first and second substrates and having a same thickness as the second partition.
摘要翻译：液晶显示器包括数据线和栅极线，栅极线包括在第一基板上的栅电极，栅极上的第一隔板和数据线，并且包括暴露栅电极的第一开口，第一开口中的栅极绝缘体，源极栅极绝缘体上的电极，包括面对源极电极和栅极绝缘体的漏电极的像素电极，源极和像素电极上的第二隔板，并且包括暴露源极和漏极的部分的第二开口，第二开口，面向第一基板的第二基板和在第一和第二基板之间的液晶层，并且具有与第二分隔板相同的厚度。

2. 发明申请

US20070040171A1 Organic thin film transistor array panel and method for manufacturing the same 有权
标题翻译：有机薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20070040171A1
公开(公告)日：2007-02-22
申请号：US11507095
申请日：2006-08-18
申请人： Bo-Sung Kim , Mun-Pyo Hong , Yong-Uk Lee , Joon-Hak Oh , Keun-Kyu Song , Seung-Hwan Cho
发明人： Bo-Sung Kim , Mun-Pyo Hong , Yong-Uk Lee , Joon-Hak Oh , Keun-Kyu Song , Seung-Hwan Cho
IPC分类号： H01L29/08 , H01L31/00
CPC分类号： H01L51/0545 , H01L27/283 , H01L27/3295 , H01L51/0003 , H01L51/0558
摘要： An organic thin film transistor array panel includes; a substrate, a data line formed on the substrate, a gate line intersecting the data line and including a gate electrode, a first interlayer insulating layer formed on the gate line and the data line and including a first opening exposing the gate electrode, a gate insulator formed in the first opening, a source electrode disposed on the gate insulator and connected to the data line, a pixel electrode disposed on the gate insulator and including a drain electrode opposing the source electrode, a insulating bank formed on the source electrode and the drain electrode, the insulating bank defining a second opening which exposes portions of the source electrode and the drain electrode, and an organic semiconductor formed in the second opening.
摘要翻译：有机薄膜晶体管阵列面板包括：基板，形成在基板上的数据线，与数据线相交并且包括栅电极的栅极线，形成在栅极线和数据线上的第一层间绝缘层，并且包括暴露栅电极的第一开口，栅极形成在第一开口中的绝缘体，设置在栅极绝缘体上并连接到数据线的源电极，设置在栅极绝缘体上并包括与源电极相对的漏电极的像素电极，形成在源电极上的绝缘堤和漏电极，所述绝缘组限定露出所述源电极和所述漏电极的部分的第二开口，以及形成在所述第二开口中的有机半导体。

3. 发明授权

US07994494B2 Organic thin film transistor array panel and method for manufacturing the same 有权
标题翻译：有机薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07994494B2
公开(公告)日：2011-08-09
申请号：US11507095
申请日：2006-08-18
申请人： Bo-Sung Kim , Mun-Pyo Hong , Yong-Uk Lee , Joon-Hak Oh , Keun-Kyu Song , Seung-Hwan Cho
发明人： Bo-Sung Kim , Mun-Pyo Hong , Yong-Uk Lee , Joon-Hak Oh , Keun-Kyu Song , Seung-Hwan Cho
IPC分类号： H01L27/32 , G09G3/30
CPC分类号： H01L51/0545 , H01L27/283 , H01L27/3295 , H01L51/0003 , H01L51/0558
摘要： An organic thin film transistor array panel includes; a substrate, a data line formed on the substrate, a gate line intersecting the data line and including a gate electrode, a first interlayer insulating layer formed on the gate line and the data line and including a first opening exposing the gate electrode, a gate insulator formed in the first opening, a source electrode disposed on the gate insulator and connected to the data line, a pixel electrode disposed on the gate insulator and including a drain electrode opposing the source electrode, a insulating bank formed on the source electrode and the drain electrode, the insulating bank defining a second opening which exposes portions of the source electrode and the drain electrode, and an organic semiconductor formed in the second opening.
摘要翻译：有机薄膜晶体管阵列面板包括：基板，形成在基板上的数据线，与数据线相交并且包括栅电极的栅极线，形成在栅极线和数据线上的第一层间绝缘层，并且包括暴露栅电极的第一开口，栅极形成在第一开口中的绝缘体，设置在栅极绝缘体上并连接到数据线的源电极，设置在栅极绝缘体上并包括与源电极相对的漏电极的像素电极，形成在源电极上的绝缘堤和漏电极，所述绝缘组限定露出所述源电极和所述漏电极的部分的第二开口，以及形成在所述第二开口中的有机半导体。

4. 发明授权

US07679712B2 Liquid crystal display comprising a semiconductor formed in an opening of a partition formed on a source electrode and a drain electrode and method of manufacturing thereof 有权
标题翻译：液晶显示器包括形成在源电极和漏极上形成的隔板的开口中的半导体及其制造方法
公开(公告)号：US07679712B2
公开(公告)日：2010-03-16
申请号：US11515566
申请日：2006-09-05
申请人： Keun-Kyu Song , Seung-Hwan Cho , Yong-Uk Lee
发明人： Keun-Kyu Song , Seung-Hwan Cho , Yong-Uk Lee
IPC分类号： G02F1/1339 , G02F1/136 , H01L35/24 , H01L21/00 , H01L51/40
CPC分类号： H01L51/055 , G02F1/1368
摘要： A liquid crystal display includes a data line and a gate line including a gate electrode on a first substrate, a first partition on the gate and data lines and including a first opening exposing the gate electrode, a gate insulator in the first opening, a source electrode on the gate insulator, a pixel electrode including a drain electrode facing the source electrode and on the gate insulator, a second partition on the source and pixel electrodes and including a second opening exposing portions of the source and drain electrodes, an organic semiconductor in the second opening, a second substrate facing the first substrate and a liquid crystal layer between the first and second substrates and having a same thickness as the second partition.
摘要翻译：液晶显示器包括数据线和栅极线，栅极线包括在第一基板上的栅电极，栅极上的第一隔板和数据线，并且包括暴露栅电极的第一开口，第一开口中的栅极绝缘体，源极栅极绝缘体上的电极，包括面对源极电极和栅极绝缘体的漏电极的像素电极，源极和像素电极上的第二隔板，并且包括暴露源极和漏极的部分的第二开口，第二开口，面向第一基板的第二基板和在第一和第二基板之间的液晶层，并且具有与第二分隔板相同的厚度。

5. 发明授权

US08252626B2 Thin film transistor array panel and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US08252626B2
公开(公告)日：2012-08-28
申请号：US12820024
申请日：2010-06-21
申请人： Seung-Hwan Cho , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Min-Ho Yoon , Jung-Hun Noh
发明人： Seung-Hwan Cho , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Min-Ho Yoon , Jung-Hun Noh
IPC分类号： H01L51/40
CPC分类号： H01L51/0541 , H01L51/0023 , H01L51/102
摘要： A manufacturing method for a thin film transistor array panel including forming a gate electrode, forming an insulating layer on the gate electrode, sequentially forming a lower conducting layer and a upper conducting layer on the insulating layer, etching the upper conducting layer to form a first source electrode and a first drain electrode, etching the lower conducting layer to form the second source electrode and the second drain electrode, over-etching the second source electrode and the second drain electrode, and forming an organic semiconductor between the second source electrode and the second drain electrode.
摘要翻译：一种薄膜晶体管阵列板的制造方法，包括形成栅电极，在栅电极上形成绝缘层，在绝缘层上依次形成下导电层和上导电层，蚀刻上导电层以形成第一源电极和第一漏电极，蚀刻下导电层以形成第二源电极和第二漏电极，过蚀刻第二源电极和第二漏电极，以及在第二源电极和第二漏电极之间形成有机半导体第二漏电极。

6. 发明申请

US20100216267A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURE THEREOF 有权
标题翻译：薄膜晶体管阵列及其制造
公开(公告)号：US20100216267A1
公开(公告)日：2010-08-26
申请号：US12772845
申请日：2010-05-03
申请人： Seung-Hwan CHO , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Jung-Hun Noh
发明人： Seung-Hwan CHO , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Jung-Hun Noh
IPC分类号： H01L51/40
CPC分类号： H01L51/0545 , H01L27/283 , H01L27/3244 , H01L51/0021
摘要： A method for a thin film transistor array panel includes forming a gate line and a pixel electrode on a substrate, forming a gate insulating layer covering the gate line, forming a data line including a source electrode and a drain electrode on the gate insulating layer, forming an interlayer insulating layer covering the data line and the drain electrode on the gate insulating layer, forming a first opening in the interlayer insulating layer, forming an organic semiconductor in the first opening, forming a passivation layer on the organic semiconductor and the interlayer insulating layer, and forming a second opening in the interlayer insulating layer to expose the pixel electrode.
摘要翻译：一种薄膜晶体管阵列面板的制造方法，在基板上形成栅极线和像素电极，形成覆盖栅极线的栅极绝缘层，在栅极绝缘层上形成包括源电极和漏极的数据线，在所述栅绝缘层上形成覆盖所述数据线和所述漏电极的层间绝缘层，在所述层间绝缘层中形成第一开口，在所述第一开口中形成有机半导体，在所述有机半导体上形成钝化层，并且在所述层间绝缘层中形成第二开口以使所述像素电极露出。

7. 发明申请

US20080296566A1 Making organic thin film transistor substrates for display devices 审中-公开
标题翻译：制造显示器件的有机薄膜晶体管基板
公开(公告)号：US20080296566A1
公开(公告)日：2008-12-04
申请号：US12156213
申请日：2008-05-30
申请人： Keun-Kyu Song , Jung-Han Shin , Bo-Sung Kim , Seon-Pil Jang , Seung-Hwan Cho , Min-Ho Yoon , Jung-Hun Noh
发明人： Keun-Kyu Song , Jung-Han Shin , Bo-Sung Kim , Seon-Pil Jang , Seung-Hwan Cho , Min-Ho Yoon , Jung-Hun Noh
IPC分类号： H01L29/02 , H01L21/00 , H01L27/28
CPC分类号： H01L51/0545 , H01L51/0558
摘要： An organic thin film transistor substrate for a display device includes a gate line, a data line insulated from the gate line, at least two organic thin film transistors, each of which is connected between the gate line and the data line, and both of which are commonly connected to a main drain electrode, and a pixel electrode connected to the main drain electrode.
摘要翻译：用于显示装置的有机薄膜晶体管基板包括栅极线，与栅极线绝缘的数据线，至少两个有机薄膜晶体管，每个有源薄膜晶体管连接在栅极线和数据线之间，通常连接到主漏电极和连接到主漏电极的像素电极。

8. 发明申请

US20070284585A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20070284585A1
公开(公告)日：2007-12-13
申请号：US11559162
申请日：2006-11-13
申请人： Seung-Hwan Cho , Young-Min Kim , Keun-Kyu Song
发明人： Seung-Hwan Cho , Young-Min Kim , Keun-Kyu Song
IPC分类号： H01L29/04
CPC分类号： H01L27/3274 , H01L27/3262 , H01L51/0005 , H01L51/0545 , H01L51/0558
摘要： A thin film transistor array panel and a method of manufacturing the same include: a substrate; a data line formed on the substrate; a gate line intersecting the data line and including a gate electrode; a source electrode connected to the data line; a drain electrode opposite the source electrode; an organic semiconductor partly in contact with the source electrode and the drain electrode; a gate insulating member positioned between the gate electrode and the organic semiconductor; and an insulating bank having an opening where the organic semiconductor and the gate insulating member are positioned and is formed in a cross shape in which a horizontal part and a vertical part intersect.
摘要翻译：薄膜晶体管阵列面板及其制造方法包括：基板; 形成在所述基板上的数据线; 与数据线相交并且包括栅电极的栅极线; 连接到数据线的源电极; 与源电极相对的漏电极; 部分地与源电极和漏电极接触的有机半导体; 定位在所述栅电极和所述有机半导体之间的栅极绝缘构件; 以及绝缘堤，其具有开口，有机半导体和栅极绝缘构件被定位并且形成为水平部分和垂直部分相交的十字形状。

9. 发明授权

US08383449B2 Method of forming a thin film transistor having openings formed therein 有权
标题翻译：形成其中形成有开口的薄膜晶体管的方法
公开(公告)号：US08383449B2
公开(公告)日：2013-02-26
申请号：US12857442
申请日：2010-08-16
申请人： Keun-Kyu Song , Tae-Young Choi , Tae-Hyung Hwang , Seung-Hwan Cho
发明人： Keun-Kyu Song , Tae-Young Choi , Tae-Hyung Hwang , Seung-Hwan Cho
IPC分类号： H01L21/336
CPC分类号： H01L51/0541 , H01L27/1214 , H01L27/283 , H01L27/3244 , H01L51/0516 , H01L51/0545
摘要： A thin film transistor array panel includes a substrate, a plurality of first and second signal lines crossing each other on the substrate, source electrodes connected to the first signal lines, drain electrodes connected to the second signal lines, pixel electrodes connected to the drain electrodes, a first partition formed on the source and drain electrodes and having a first opening, wherein a lower width of the first opening is wider than an upper width of the first opening, an organic semiconductor formed in the first opening and at least overlapping the portions of the source electrode and the drain electrode, and a gate electrode connected to the second signal line and at least overlapping the portion of the organic semiconductor.
摘要翻译：薄膜晶体管阵列面板包括基板，在基板上彼此交叉的多个第一和第二信号线，连接到第一信号线的源电极，连接到第二信号线的漏电极，连接到漏电极的像素电极形成在源电极和漏电极上并具有第一开口的第一分区，其中第一开口的较低宽度比第一开口的上宽度宽;形成在第一开口中的至少重叠部分的有机半导体，源极电极和漏极电极，以及连接到第二信号线并至少与有机半导体的部分重叠的栅电极。

10. 发明申请

US20100255633A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20100255633A1
公开(公告)日：2010-10-07
申请号：US12820024
申请日：2010-06-21
申请人： Seung-Hwan CHO , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Min-Ho Yoon , Jung-Hun Noh
发明人： Seung-Hwan CHO , Bo-Sung Kim , Keun-Kyu Song , Tae-Young Choi , Min-Ho Yoon , Jung-Hun Noh
IPC分类号： H01L51/40
CPC分类号： H01L51/0541 , H01L51/0023 , H01L51/102
摘要： A manufacturing method for a thin film transistor array panel including forming a gate electrode, forming an insulating layer on the gate electrode, sequentially forming a lower conducting layer and a upper conducting layer on the insulating layer, etching the upper conducting layer to form a first source electrode and a first drain electrode, etching the lower conducting layer to form the second source electrode and the second drain electrode, over-etching the second source electrode and the second drain electrode, and forming an organic semiconductor between the second source electrode and the second drain electrode.
摘要翻译：一种薄膜晶体管阵列板的制造方法，包括形成栅电极，在栅电极上形成绝缘层，在绝缘层上依次形成下导电层和上导电层，蚀刻上导电层以形成第一源电极和第一漏电极，蚀刻下导电层以形成第二源电极和第二漏电极，过蚀刻第二源电极和第二漏电极，以及在第二源电极和第二漏电极之间形成有机半导体第二漏电极。

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