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    • 1. 发明授权
    • Adaptive data communication control method and portable device for supporting the same
    • 自适应数据通信控制方法和便携式设备支持相同
    • US08903391B2
    • 2014-12-02
    • US13247164
    • 2011-09-28
    • Jin Yup KimKi Soo ChoSeung Hwan Cho
    • Jin Yup KimKi Soo ChoSeung Hwan Cho
    • H04W4/00H04W28/18H04W48/16H04W48/18H04W76/02
    • H04W28/18H04W48/16H04W48/18H04W76/10
    • A method and a portable device for supporting an adaptive data communication control are provided. The device includes a memory unit, a control unit, and a radio frequency unit. The memory unit stores a table that contains data communication setting information corresponding to each service operator network. The control unit performs a Public Land Mobile Network (PLMN) selection after entering into a service area of specific service operator network, and receives Mobile Country Code/Mobile Network Code (MCC/MNC) information from the specific service operator network while the PLMN selection is being performed. The control unit extracts the data communication setting information corresponding to the MCC/MNC information from the table, and establishes a data communication connection with the specific service operator network according to the extracted data communication setting information. The radio frequency unit performs the established data communication with the specific service operator network under the control of the control unit.
    • 提供了一种用于支持自适应数据通信控制的方法和便携式设备。 该装置包括存储单元,控制单元和射频单元。 存储单元存储包含与各服务运营商网络对应的数据通信设定信息的表。 控制单元在进入特定服务运营商网络的服务区域之后执行公共陆地移动网络(PLMN)选择,并从特定服务运营商网络接收移动国家/地区代码/移动网络代码(MCC / MNC)信息,而PLMN选择 正在执行。 控制单元从表中提取与MCC / MNC信息对应的数据通信设定信息,根据所提取的数据通信设定信息与特定服务运营商网络建立数据通信连接。 无线电频率单元在控制单元的控制下执行与特定服务运营商网络建立的数据通信。
    • 2. 发明授权
    • Fabrication method for an organic thin film transistor substrate
    • 有机薄膜晶体管基板的制造方法
    • US08278648B2
    • 2012-10-02
    • US11781109
    • 2007-07-20
    • Tae Young ChoiBo Sung KimKeun Kyu SongSeung Hwan Cho
    • Tae Young ChoiBo Sung KimKeun Kyu SongSeung Hwan Cho
    • H01L29/08H01L51/10
    • H01L51/0096H01L51/0545H01L51/102H01L51/107Y02E10/549
    • An organic thin film transistor (TFT) substrate with a simplified fabrication process is disclosed. The TFT substrate includes a gate line and a data line and an organic TFT connected to the gate line and the data line. The gate line and the data line define a pixel region where a pixel electrode is formed. A first contact portion connects the data line to the organic TFT, and a second contact portion connects the pixel electrode to the organic TFT. A passivation layer covers the organic TFT. The organic TFT substrate also includes a bank insulating layer with a first contact hole for connecting the first contact portion to the organic TFT, a second contact hole for connecting the second contact portion to the organic TFT, a first sub bank defining a location of the gate insulating layer, and a second sub bank defining a location of the passivation layer.
    • 公开了一种简化制造工艺的有机薄膜晶体管(TFT)衬底。 TFT基板包括栅极线和数据线以及连接到栅极线和数据线的有机TFT。 栅极线和数据线限定形成像素电极的像素区域。 第一接触部将数据线连接到有机TFT,第二接触部将像素电极连接到有机TFT。 钝化层覆盖有机TFT。 有机TFT基板还包括具有用于将第一接触部分连接到有机TFT的第一接触孔的第一接触孔,用于将第二接触部分连接到有机TFT的第二接触孔,限定位置的第一子组 栅绝缘层和限定钝化层的位置的第二子库。
    • 7. 发明授权
    • Organic thin film transistor substrate and method of manufacturing the same
    • 有机薄膜晶体管基板及其制造方法
    • US07709834B2
    • 2010-05-04
    • US11828971
    • 2007-07-26
    • Seung Hwan ChoKeun Kyu SongMin Ho Yoon
    • Seung Hwan ChoKeun Kyu SongMin Ho Yoon
    • H01L35/24H01L51/00
    • H01L51/0545H01L27/283H01L51/0558
    • The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.The organic thin film transistor according to the present invention comprises a gate line formed on a substrate; a data line which intersects the gate line with an organic gate insulating layer interposed therebetween to define a pixel area; a thin film transistor connected with the gate line and the data line and which includes an organic semiconductive layer; a pixel electrode connected with the thin film transistor and formed in the pixel area; an organic protective layer formed parallel with the gate line to cover the organic semiconductive layer and its peripheral area; a first border insulating layer stepwise formed so that the organic gate insulating layer and the protective layer are filled, and a second border insulating layer formed on the source electrode and the drain electrode of the thin film transistor so that the organic semiconductive layer is filled.
    • 本发明提供一种能够均匀形成栅极绝缘层和保护层的厚度并防止有机半导体层溢出的有机薄膜晶体管基板及其制造方法。 根据本发明的有机薄膜晶体管包括形成在基板上的栅极线; 与栅极线相交的数据线和插入其间的有机栅极绝缘层,以限定像素区域; 与栅极线和数据线连接并且包括有机半导体层的薄膜晶体管; 与所述薄膜晶体管连接并形成在所述像素区域中的像素电极; 与栅极线平行地形成以覆盖有机半导体层及其周边区域的有机保护层; 逐层形成第一边界绝缘层,以便填充有机栅极绝缘层和保护层;以及第二边界绝缘层,形成在薄膜晶体管的源电极和漏电极上,从而填充有机半导体层。