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1. 发明申请

US20070284585A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20070284585A1
公开(公告)日：2007-12-13
申请号：US11559162
申请日：2006-11-13
申请人： Seung-Hwan Cho , Young-Min Kim , Keun-Kyu Song
发明人： Seung-Hwan Cho , Young-Min Kim , Keun-Kyu Song
IPC分类号： H01L29/04
CPC分类号： H01L27/3274 , H01L27/3262 , H01L51/0005 , H01L51/0545 , H01L51/0558
摘要： A thin film transistor array panel and a method of manufacturing the same include: a substrate; a data line formed on the substrate; a gate line intersecting the data line and including a gate electrode; a source electrode connected to the data line; a drain electrode opposite the source electrode; an organic semiconductor partly in contact with the source electrode and the drain electrode; a gate insulating member positioned between the gate electrode and the organic semiconductor; and an insulating bank having an opening where the organic semiconductor and the gate insulating member are positioned and is formed in a cross shape in which a horizontal part and a vertical part intersect.
摘要翻译：薄膜晶体管阵列面板及其制造方法包括：基板; 形成在所述基板上的数据线; 与数据线相交并且包括栅电极的栅极线; 连接到数据线的源电极; 与源电极相对的漏电极; 部分地与源电极和漏电极接触的有机半导体; 定位在所述栅电极和所述有机半导体之间的栅极绝缘构件; 以及绝缘堤，其具有开口，有机半导体和栅极绝缘构件被定位并且形成为水平部分和垂直部分相交的十字形状。

2. 发明授权

US07781774B2 Thin film transistor array panel 有权
标题翻译：薄膜晶体管阵列面板
公开(公告)号：US07781774B2
公开(公告)日：2010-08-24
申请号：US11559162
申请日：2006-11-13
申请人： Seung-Hwan Cho , Young-Min Kim , Keun-Kyu Song
发明人： Seung-Hwan Cho , Young-Min Kim , Keun-Kyu Song
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/3274 , H01L27/3262 , H01L51/0005 , H01L51/0545 , H01L51/0558
摘要： A thin film transistor array panel and a method of manufacturing the same include: a substrate; a data line formed on the substrate; a gate line intersecting the data line and including a gate electrode; a source electrode connected to the data line; a drain electrode opposite the source electrode; an organic semiconductor partly in contact with the source electrode and the drain electrode; a gate insulating member positioned between the gate electrode and the organic semiconductor; and an insulating bank having an opening where the organic semiconductor and the gate insulating member are positioned and is formed in a cross shape in which a horizontal part and a vertical part intersect.
摘要翻译：薄膜晶体管阵列面板及其制造方法包括：基板; 形成在所述基板上的数据线; 与数据线相交并且包括栅电极的栅极线; 连接到数据线的源电极; 与源电极相对的漏电极; 部分地与源电极和漏电极接触的有机半导体; 定位在所述栅电极和所述有机半导体之间的栅极绝缘构件; 以及绝缘堤，其具有开口，有机半导体和栅极绝缘构件被定位并且形成为水平部分和垂直部分相交的十字形状。

3. 发明申请

US20080035919A1 Thin film transistor array panel and method of manufacturing the same 审中-公开
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20080035919A1
公开(公告)日：2008-02-14
申请号：US11891587
申请日：2007-08-09
申请人： Jung-Han Shin , Keun-Kyu Song , Tae-Young Choi , Young-Min Kim , Joon-Hak Oh , Seung-Hwan Cho
发明人： Jung-Han Shin , Keun-Kyu Song , Tae-Young Choi , Young-Min Kim , Joon-Hak Oh , Seung-Hwan Cho
IPC分类号： H01L51/10 , H01L51/48
CPC分类号： H01L27/3274 , H01L21/84 , H01L27/12 , H01L51/56
摘要： Disclosed is a thin film transistor array panel including a substrate, a data line formed on the substrate, a gate line that intersects the data line and includes a gate electrode, a source electrode connected to the data line, and a drain electrode facing the source electrode. An organic semiconductor contacts the source electrode and the drain electrode via an insulating layer having an opening that defines the location of the organic semiconductor. The insulating layer includes an acrylic photosensitive resin having a fluorine-containing compound. A method of manufacturing the above-described thin film transistor array panel is disclosed.
摘要翻译：公开了一种薄膜晶体管阵列面板，其包括基板，形成在基板上的数据线，与数据线相交并包括栅电极的栅极线，连接到数据线的源电极和面对源极的漏电极电极。有机半导体通过具有限定有机半导体的位置的开口的绝缘层与源电极和漏电极接触。绝缘层包括具有含氟化合物的丙烯酸类感光性树脂。公开了一种制造上述薄膜晶体管阵列面板的方法。

4. 发明授权

US08519393B2 Thin film transistor array panel and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US08519393B2
公开(公告)日：2013-08-27
申请号：US12823043
申请日：2010-06-24
申请人： Tae-Young Choi , Hi-Kuk Lee , Bo-Sung Kim , Young-Min Kim , Seung-Hwan Cho , Young-Soo Yoon , Yeon-Taek Jeong , Seon-Pil Jang
发明人： Tae-Young Choi , Hi-Kuk Lee , Bo-Sung Kim , Young-Min Kim , Seung-Hwan Cho , Young-Soo Yoon , Yeon-Taek Jeong , Seon-Pil Jang
IPC分类号： H01L27/146 , H01L29/786
CPC分类号： H01L29/66765 , H01L21/02554 , H01L21/02565 , H01L27/1225 , H01L29/7869
摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer.
摘要翻译：根据本发明的示例性实施例的薄膜晶体管阵列面板包括：栅极，设置在绝缘基板上; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体; 设置在所述半导体上的蚀刻停止层; 设置在所述栅极绝缘层上的绝缘层; 以及与半导体重叠的源电极和漏电极。半导体和栅极绝缘层具有其上设置有蚀刻停止层和绝缘层的第一部分，以及不设置蚀刻停止层和绝缘层的第二部分。源电极和漏极设置在半导体的第二部分和栅极绝缘层上。

5. 发明申请

US20100128190A1 Liquid Crystal Display and Manufacturing Method of the Same 审中-公开
标题翻译：液晶显示及其制造方法
公开(公告)号：US20100128190A1
公开(公告)日：2010-05-27
申请号：US12431503
申请日：2009-04-28
申请人： Bo-Kyoung Ahn , Bo-Sung Kim , Young-Min Kim , Nam-Ok Jung , Seung-Hwan Cho
发明人： Bo-Kyoung Ahn , Bo-Sung Kim , Young-Min Kim , Nam-Ok Jung , Seung-Hwan Cho
IPC分类号： G02F1/1368 , H01L21/336
CPC分类号： G02F1/13394 , G02F1/133707 , G02F1/136227
摘要： Disclosed is a liquid crystal display including a first substrate, a second substrate facing the first substrate, a thin film transistor formed on the first substrate and including a semiconductor layer, a convex pattern formed on the semiconductor layer and provided at a side surface thereof with a concave-convex section, and a liquid crystal layer interposed between the first and second substrates.
摘要翻译：公开了一种液晶显示器，包括第一基板，面对第一基板的第二基板，形成在第一基板上并包括半导体层的薄膜晶体管，形成在半导体层上并在其侧表面上设置的凸起图案，凹凸部分和插在第一和第二基板之间的液晶层。

6. 发明申请

US20100051911A1 Organic Thin Film Transistor Array Panel and Method of Manufacturing the Same 审中-公开
标题翻译：有机薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20100051911A1
公开(公告)日：2010-03-04
申请号：US12391883
申请日：2009-02-24
申请人： Seung-Hwan Cho , Bo-Sung Kim , Young-Min Kim , Shi-Woo Rhee , Dong-Jin Yun
发明人： Seung-Hwan Cho , Bo-Sung Kim , Young-Min Kim , Shi-Woo Rhee , Dong-Jin Yun
IPC分类号： H01L51/50 , H01L51/56
CPC分类号： H01L51/0545 , H01L51/0036 , H01L51/0053 , H01L51/0056 , H01L51/0078
摘要： In an organic thin film transistor array panel includes a source electrode and a drain electrode having a double layer including a metal and a metal oxide. The organic thin film transistor array panel is formed through a lift-off process or by using a shadow mask. The thin film transistor array panel has excellent characteristics and reduced manufacturing process costs.
摘要翻译：在有机薄膜晶体管阵列面板中包括具有包括金属和金属氧化物的双层的源电极和漏电极。有机薄膜晶体管阵列板通过剥离工艺或使用荫罩形成。薄膜晶体管阵列面板具有优异的特性和降低的制造工艺成本。

7. 发明授权

US08367444B2 Display substrate and method of manufacturing the same 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US08367444B2
公开(公告)日：2013-02-05
申请号：US12902761
申请日：2010-10-12
申请人： Young-Min Kim , Bo-Sung Kim , Seon-Pil Jang , Seung-Hwan Cho , Kang-Moon Jo
发明人： Young-Min Kim , Bo-Sung Kim , Seon-Pil Jang , Seung-Hwan Cho , Kang-Moon Jo
IPC分类号： H01L21/02
CPC分类号： H01L29/78606 , H01L27/1214 , H01L27/124 , H01L27/1288
摘要： A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer.
摘要翻译：显示基板包括栅极线，栅极绝缘层，数据线，开关元件，保护绝缘层，栅极焊盘部分和数据焊盘部分。栅极绝缘层设置在栅极线上。开关元件连接到栅极线和数据线。保护绝缘层设置在开关元件上。栅极焊盘部分包括通过形成在栅极绝缘层上的第一孔与栅极线的端部接触的第一栅极焊盘电极和通过第二栅极焊盘电极与第一栅极焊盘电极接触的第二栅极焊盘电极孔通过保护层形成。数据焊盘部分包括通过形成在保护绝缘层上的第三孔与数据线的端部接触的数据焊盘电极。

8. 发明申请

US20110140094A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20110140094A1
公开(公告)日：2011-06-16
申请号：US12823043
申请日：2010-06-24
申请人： Tae-Young Choi , Hi-Kuk Lee , Bo-Sung Kim , Young-Min Kim , Seung-Hwan Cho , Young-Soo Yoon , Yeon-Taek Jeong , Seon-Pil Jang
发明人： Tae-Young Choi , Hi-Kuk Lee , Bo-Sung Kim , Young-Min Kim , Seung-Hwan Cho , Young-Soo Yoon , Yeon-Taek Jeong , Seon-Pil Jang
IPC分类号： H01L27/12 , H01L21/84 , H01L21/34 , H01L29/12
CPC分类号： H01L29/66765 , H01L21/02554 , H01L21/02565 , H01L27/1225 , H01L29/7869
摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer
摘要翻译：根据本发明的示例性实施例的薄膜晶体管阵列面板包括：栅极，设置在绝缘基板上; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体; 设置在所述半导体上的蚀刻停止层; 设置在所述栅极绝缘层上的绝缘层; 以及与半导体重叠的源电极和漏电极。半导体和栅极绝缘层具有其上设置有蚀刻停止层和绝缘层的第一部分，以及不设置蚀刻停止层和绝缘层的第二部分。源电极和漏极设置在半导体的第二部分和栅极绝缘层上

9. 发明授权

US09799885B2 Binder for secondary battery exhibiting excellent adhesion force 有权
公开(公告)号：US09799885B2
公开(公告)日：2017-10-24
申请号：US13808446
申请日：2011-07-05
申请人： MinAh Kang , Young-Min Kim , Chang Bum Ko , Ok Sun Kim
发明人： MinAh Kang , Young-Min Kim , Chang Bum Ko , Ok Sun Kim
IPC分类号： H01M6/22 , H01M4/62 , H01M4/131 , C08F220/14 , C08F220/18 , H01M10/0525 , C08F212/08 , C08F220/26 , C08F222/10 , C08F220/44
CPC分类号： H01M4/622 , C08F212/08 , C08F220/14 , C08F220/18 , C08F220/26 , C08F220/44 , C08F222/1006 , H01M4/131 , H01M10/0525
摘要： Provided is a binder for secondary battery electrodes comprising polymer particles obtained by polymerizing three or more kinds of monomers wherein the polymer particles have a mean particle diameter of 0.3 μm to 0.7 μm. The binder exhibits superior adhesion force to electrode current collectors and excellent support force to the active material and basically improves safety of electrodes, thus providing a secondary battery with superior cycle characteristics.

10. 发明授权

US09413011B2 Binder for secondary battery exhibiting excellent adhesion force 有权
标题翻译：二次电池粘合剂具有优异的粘附力
公开(公告)号：US09413011B2
公开(公告)日：2016-08-09
申请号：US13805875
申请日：2011-07-13
申请人： MinAh Kang , Young-Min Kim , Chang Bum Ko , Ok Sun Kim
发明人： MinAh Kang , Young-Min Kim , Chang Bum Ko , Ok Sun Kim
IPC分类号： H01M4/62 , H01M4/131 , H01M4/133 , C08F220/18 , H01M10/0525
CPC分类号： H01M4/622 , C08F2220/1825 , H01M4/131 , H01M4/133 , H01M10/0525 , Y02E60/122 , C08F212/08 , C08F220/06 , C08F222/1006
摘要： Provided is a binder for secondary battery electrodes comprising a polymer obtained by polymerizing three or more kinds of monomers with a reactive emulsifying agent. The binder reduces moisture impregnation, improves dispersibility and enhances adhesive force, thus providing a secondary battery with superior safety and cycle characteristics.
摘要翻译：提供一种二次电池电极用粘合剂，其包含通过使三种或更多种单体与反应性乳化剂聚合而获得的聚合物。粘合剂减少水分浸渍，提高分散性和增强粘合力，从而提供具有优异安全性和循环特性的二次电池。

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