专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5300460A UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers 失效
标题翻译： UHF / VHF等离子体，用于在半导体晶片上形成集成电路结构
公开(公告)号：US5300460A
公开(公告)日：1994-04-05
申请号：US32744
申请日：1993-03-16
申请人： Kenneth S. Collins , Craig A. Roderick , Chan-Lon Yang , David N. K. Wang , Dan Maydan
发明人： Kenneth S. Collins , Craig A. Roderick , Chan-Lon Yang , David N. K. Wang , Dan Maydan
IPC分类号： C23C16/509 , H01J37/32 , H05H1/46 , H01L21/00 , H01L21/02 , H01L21/22 , H01L21/265
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082 , H05H1/46
摘要： An improved method of fabricating integrated circuit structures on semiconductor wafers using a plasma-assisted process is disclosed wherein the plasma is generated by a VHF/UHF power source at a frequency ranging from about 50 to about 800 MHz. Low pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out within a pressure range not exceeding about 500 milliTorr; with a ratio of anode to cathode area of from about 2:1 to about 20:1, and an electrode spacing of from about 5 cm. to about 30 cm. High pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out with a pressure ranging from over 500 milliTorr up to 50 Torr or higher; with an anode to cathode electrode spacing of less than about 5 cm. By carrying out plasma-assisted processes using plasma operated within a range of from about 50 to about 800 MHz, the electrode sheath voltages are maintained sufficiently low, so as to avoid damage to structures on the wafer, yet sufficiently high to preferably permit initiation of the processes without the need for supplemental power sources. Operating in this frequency range may also result in reduction or elimination of microloading effects.
摘要翻译：公开了使用等离子体辅助方法制造半导体晶片上的集成电路结构的改进方法，其中等离子体由VHF / UHF电源以约50至约800MHz的频率产生。低压等离子体辅助蚀刻或沉积工艺，即工艺可以在不超过约500毫托的压力范围内进行; 阳极与阴极面积的比例为约2:1至约20:1，电极间距约为5cm。到约30厘米。高压等离子体辅助蚀刻或沉积工艺，即工艺可以在500毫乇至50乇以上的压力下进行; 阳极至阴极间距小于约5厘米。通过使用在约50至约800MHz的范围内操作的等离子体等离子体辅助处理，电极护套电压保持足够低，以避免损坏晶片上的结构，但足够高以优选允许引发该过程无需补充电源。在该频率范围内工作也可能导致微载物效应的降低或消除。

2. 发明授权

US5210466A VHF/UHF reactor system 失效
标题翻译： VHF / UHF反应堆系统
公开(公告)号：US5210466A
公开(公告)日：1993-05-11
申请号：US852826
申请日：1992-03-13
申请人： Kenneth S. Collins , Craig A. Roderick , Chan-Lon Yang , David N. K. Wang , Dan Maydan
发明人： Kenneth S. Collins , Craig A. Roderick , Chan-Lon Yang , David N. K. Wang , Dan Maydan
IPC分类号： C23C16/509 , H01J37/32 , H05H1/46
CPC分类号： H01J37/32174 , C23C16/509 , H01J37/32082 , H01J37/32091 , H05H1/46 , H05K2201/10015 , H05K2201/10689
摘要： A plasma processing reactor is disclosed which incorporates an integral co-axial transmission line structure that effects low loss, very short transmission line coupling of ac power to the plasma chamber and therefore permits the effective use of VHF/UHF frequencies for generating a plasma. The use of VHF/UHF frequencies within the range 50-800 megahertz provides commercially viable processing rates (separate and simultaneous etching and deposition) and substantial reduction in sheath voltages compared to conventional frequencies such as 13.56 MHz. As a result, the probability of damaging electrically sensitive small geometry devices is reduced.
摘要翻译：公开了一种等离子体处理反应器，其包括整体的同轴传输线结构，其将低功率损耗，非常短的传输线耦合到等离子体室，因此允许有效地使用VHF / UHF频率来产生等离子体。在常规频率（如13.56 MHz）下，VHF / UHF频率在50-800兆赫兹范围内的使用提供了商业上可行的处理速率（分离和同步蚀刻和沉积）和皮套电压的显着降低。结果，减少了电敏感小型几何装置的损坏概率。

3. 发明授权

US06518195B1 Plasma reactor using inductive RF coupling, and processes 失效
标题翻译：使用感应式RF耦合的等离子体反应器和工艺
公开(公告)号：US06518195B1
公开(公告)日：2003-02-11
申请号：US09504312
申请日：2000-02-15
申请人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Craig A. Roderick , John R. Trow , Tetsuya Ishikawa , Jay D. Pinson, II , Lawrence Chang-Lai Lei , Masato M. Toshima , Gerald Zheyao Yin
发明人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Craig A. Roderick , John R. Trow , Tetsuya Ishikawa , Jay D. Pinson, II , Lawrence Chang-Lai Lei , Masato M. Toshima , Gerald Zheyao Yin
IPC分类号： H01L213065
CPC分类号： H01J37/32871 , C23C16/507 , C23C16/517 , H01F2029/143 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H01L21/6831
摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the 10 wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.
摘要翻译：圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。施加到10晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。公开了各种磁和电压处理增强技术，以及蚀刻工艺沉积工艺和组合蚀刻/沉积处理。所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

4. 发明授权

US6068784A Process used in an RF coupled plasma reactor 失效
标题翻译：用于RF耦合等离子体反应器的工艺
公开(公告)号：US6068784A
公开(公告)日：2000-05-30
申请号：US41118
申请日：1993-04-01
申请人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence Chang-Lai Lei , Masato M. Toshima
发明人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence Chang-Lai Lei , Masato M. Toshima
IPC分类号： C23C16/507 , H01L21/311 , B44C1/22 , B28B1/02
CPC分类号： H01J37/32458 , C23C16/507 , H01J37/321 , H01J37/32165 , H01J37/32522 , H01L21/31116 , H01F2029/143
摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.
摘要翻译：圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

5. 发明授权

US06218312B1 Plasma reactor with heated source of a polymer-hardening precursor material 失效
标题翻译：具有聚合物硬化前体材料的加热源的等离子体反应器
公开(公告)号：US06218312B1
公开(公告)日：2001-04-17
申请号：US08987509
申请日：1998-10-08
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21302
CPC分类号： H01J37/32871 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382 , H01L21/31116 , H01L21/6831
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.
摘要翻译：本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅），并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置或远程加热硅片。

6. 发明授权

US6036877A Plasma reactor with heated source of a polymer-hardening precursor material 失效
公开(公告)号：US6036877A
公开(公告)日：2000-03-14
申请号：US648256
申请日：1996-05-13
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21/302 , C23C16/517 , H01J37/32 , H01L21/3065 , H01L21/311 , H01L21/683 , H05H1/00
CPC分类号： H01J37/32871 , C23C16/517 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H01L21/6831 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

7. 发明授权

US06545420B1 Plasma reactor using inductive RF coupling, and processes 失效
标题翻译：使用感应式RF耦合的等离子体反应器和工艺
公开(公告)号：US06545420B1
公开(公告)日：2003-04-08
申请号：US08468573
申请日：1995-06-06
申请人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence Chang-Lai Lei , Masato M. Toshima
发明人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence Chang-Lai Lei , Masato M. Toshima
IPC分类号： H01J724
CPC分类号： H01J37/32871 , C23C16/509 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32146 , H01J37/32165 , H01J37/32174 , H01J37/3222 , H01J37/32293 , H01J37/32458 , H01J37/32522 , H01J37/3266 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H01L21/6831
摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.
摘要翻译：圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

8. 发明授权

US06488807B1 Magnetic confinement in a plasma reactor having an RF bias electrode 失效
标题翻译：具有RF偏置电极的等离子体反应器中的磁约束
公开(公告)号：US06488807B1
公开(公告)日：2002-12-03
申请号：US09563825
申请日：2000-05-03
申请人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Craig A. Roderick , John R. Trow , Tetsuya Ishikawa , Jay D. Pinson, II , Lawrence Chang-Lai Lei , Masato M. Toshima , Gerald Zheyao Yin
发明人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Craig A. Roderick , John R. Trow , Tetsuya Ishikawa , Jay D. Pinson, II , Lawrence Chang-Lai Lei , Masato M. Toshima , Gerald Zheyao Yin
IPC分类号： H05H100
CPC分类号： H01J37/32871 , C23C16/507 , C23C16/517 , H01F2029/143 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H01L21/6831
摘要： The invention is embodied in an RF plasma reactor for processing a semiconductor workpiece, including wall structures for containing a plasma therein, a workpiece support, a coil antenna capable of receiving a source RF power signal and being juxtaposed near the chamber, the workpiece support including a bias electrode capable of receiving a bias RF power signal, and first and second magnet structures adjacent the wall structure and in spaced relationship, with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure. The invention is also embodied in an RF plasma reactor for processing a semiconductor workpiece, including one or more wall structures for containing a plasma therein, a workpiece support, the workpiece support comprising a lower electrode, an upper electrode facing the lower electrode and spaced across a plasma generation region of said chamber from said lower electrode, and first and second magnet structures adjacent the wall structure and in spaced relationship with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure.
摘要翻译：本发明体现在用于处理半导体工件的RF等离子体反应器中，其包括用于在其中容纳等离子体的壁结构，工件支撑件，能够接收源RF功率信号并在该室附近并列的线圈天线，所述工件支撑件包括能够接收偏置RF功率信号的偏置电极，以及与壁结构相邻并且间隔的关系的第一和第二磁体结构，第一磁体结构的一个磁极面对第二磁体结构的相对极，磁体结构提供等离子体约束的静磁场与所述壁结构相邻。本发明还体现在用于处理半导体工件的RF等离子体反应器中，该半导体工件包括一个或多个用于在其中容纳等离子体的壁结构，工件支撑件，工件支撑件包括下电极，上电极面向下电极并间隔开所述腔室的等离子体产生区域与所述下部电极相邻，第一和第二磁体结构邻近所述壁结构并且与所述第一磁体结构的与所述第二磁体结构的相反极的一极相隔开，所述磁体结构提供等离子体围绕所述壁结构保持静止磁场。

9. 发明授权

US06440866B1 Plasma reactor with heated source of a polymer-hardening precursor material 失效
标题翻译：具有聚合物硬化前体材料的加热源的等离子体反应器
公开(公告)号：US06440866B1
公开(公告)日：2002-08-27
申请号：US09595750
申请日：2000-06-16
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L2100
CPC分类号： H01J37/32871 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382 , H01L21/31116 , H01L21/6831
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.
摘要翻译：本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅），并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置或远程加热硅片。

10. 发明授权

US06251792B1 Plasma etch processes 失效
标题翻译：等离子体蚀刻工艺
公开(公告)号：US06251792B1
公开(公告)日：2001-06-26
申请号：US08948560
申请日：1997-10-10
申请人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence Chang-Lai Lei , Masato M. Toshima , Gerald Zheyao Yin
发明人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence Chang-Lai Lei , Masato M. Toshima , Gerald Zheyao Yin
IPC分类号： H01L21302
CPC分类号： H01J37/32871 , C23C16/507 , C23C16/509 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32146 , H01J37/32165 , H01J37/32174 , H01J37/3222 , H01J37/32293 , H01J37/32458 , H01J37/32522 , H01J37/3266 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H01L21/6831
摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.
摘要翻译：圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式