专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07833806B2 Structure and method for fabricating cladded conductive lines in magnetic memories 有权
标题翻译：在磁存储器中制造包覆导电线的结构和方法
公开(公告)号：US07833806B2
公开(公告)日：2010-11-16
申请号：US12363404
申请日：2009-01-30
申请人： Kenneth H. Smith , Nicholas D. Rizzo , Sanjeev Aggarwal , Anthony Ciancio , Brian R. Butcher , Kelly Wayne Kyler
发明人： Kenneth H. Smith , Nicholas D. Rizzo , Sanjeev Aggarwal , Anthony Ciancio , Brian R. Butcher , Kelly Wayne Kyler
IPC分类号： H01L21/00
CPC分类号： H01L27/222 , G11C11/161 , G11C11/1659 , H01L23/53238 , H01L2924/0002 , Y10S438/978 , H01L2924/00
摘要： A method of forming a magnetoelectronic device includes forming a dielectric material (114) surrounding a magnetic bit (112), etching the dielectric material (114) to define an opening (122) over the magnetic bit (112) without exposing the magnetic bit (112), the opening (122) having a sidewall, depositing a blanket layer (132) of cladding material over the dielectric material (118), including over the sidewall, removing by a sputtering process the blanket layer (132) in the bottom of the opening (122) and the dielectric material (124) over the magnetic bit (112), and forming a conductive material (146) within the opening (122) to form a bit line (154). This process reduces errors caused by process irregularities such as edges of the bits (112) protruding and thereby causing defects in the cladding layer (132) formed thereover. A bit line or digit line so formed may optionally be tapered at the ends (182, 184) to prevent magnetic reversal of the bit line magnetic moment that otherwise may occur due to external magnetic fields.
摘要翻译：一种形成磁电子器件的方法包括形成围绕磁头（112）的电介质材料（114），蚀刻电介质材料（114）以在磁头（112）上方限定开口（122），而不暴露磁头 112），所述开口（122）具有侧壁，在所述电介质材料（118）上沉积包覆材料的覆盖层（132），包括在所述侧壁上方，通过溅射工艺去除所述绝缘层所述开口（122）和所述电介质材料（124）在所述磁头（112）上方，并且在所述开口（122）内形成导电材料（146）以形成位线（154）。该过程减少了诸如位（112）的边缘突出的过程不规则性引起的错误，从而在其上形成的包层（132）中产生缺陷。如此形成的位线或数字线可以可选地在端部（182,184）处是锥形的，以防止由于外部磁场而可能发生的位线磁矩的磁性反转。

2. 发明授权

US06211090B1 Method of fabricating flux concentrating layer for use with magnetoresistive random access memories 有权
标题翻译：制造用于磁阻随机存取存储器的磁通集中层的方法
公开(公告)号：US06211090B1
公开(公告)日：2001-04-03
申请号：US09528971
申请日：2000-03-21
申请人： Mark Durlam , Eugene Youjun Chen , Saied N. Tehrani , Jon Michael Slaughter , Gloria Kerszykowski , Kelly Wayne Kyler
发明人： Mark Durlam , Eugene Youjun Chen , Saied N. Tehrani , Jon Michael Slaughter , Gloria Kerszykowski , Kelly Wayne Kyler
IPC分类号： H01L2100
CPC分类号： H01L27/222 , B82Y10/00
摘要： A method of fabricating a flux concentrator for use in magnetic memory devices including the steps of providing at least one magnetic memory bit (10) and forming proximate thereto a material stack defining a copper (Cu) damascene bit line (56) including a flux concentrating layer (52). The method includes the steps of depositing a bottom dielectric layer (32), an optional etch stop (34) layer, and a top dielectric layer (36) proximate the magnetic memory bit (10). A trench (38) is etched in the top dielectric layer (36) and the bottom dielectric layer (32). A first barrier layer (42) is deposited in the trench (38). Next, a metal system (29) is deposited on a surface of the first barrier layer (42). The metal system (29) includes a copper (Cu) seed material (44), and a plated copper (Cu) material (46), a first outside barrier layer (50), a flux concentrating layer (52), and a second outside barrier layer (54). The metal system (29) is patterned and etched to define a copper (Cu) damascene bit line (56).
摘要翻译：一种制造用于磁存储器件的通量集中器的方法，包括以下步骤：提供至少一个磁存储器位（10），并在其附近形成限定铜（Cu）镶嵌位线（56）的材料堆，所述铜（Cu）镶嵌位线包括通量集中层（52）。该方法包括以下步骤：沉积底部电介质层（32），可选的蚀刻停止层（34）层和靠近磁存储器位（10）的顶部电介质层（36）。在顶部电介质层（36）和底部电介质层（32）中蚀刻沟槽（38）。第一阻挡层（42）沉积在沟槽（38）中。接下来，金属系统（29）沉积在第一阻挡层（42）的表面上。金属系统（29）包括铜（Cu）种子材料（44）和镀铜（Cu）材料（46），第一外部阻挡层（50），集流层（52）和第二外部阻挡层（54）。金属系统（29）被图案化和蚀刻以限定铜（Cu）镶嵌位线（56）。

3. 发明授权

US06912107B2 Magnetic element with insulating veils and fabricating method thereof 失效
标题翻译：具有绝缘面纱的磁性元件及其制造方法
公开(公告)号：US06912107B2
公开(公告)日：2005-06-28
申请号：US10830264
申请日：2004-04-21
申请人： Eugene Youjun Chen , Mark Durlam , Saied N. Tehrani , Mark DeHerrera , Gloria Kerszykowski , Kelly Wayne Kyler
发明人： Eugene Youjun Chen , Mark Durlam , Saied N. Tehrani , Mark DeHerrera , Gloria Kerszykowski , Kelly Wayne Kyler
IPC分类号： G11B5/39 , H01F10/32 , H01F41/30 , H01L21/8246 , H01L27/105 , H01L43/08 , G11B5/127
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/324 , H01F41/302 , H01L43/12 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052 , Y10T428/24917
摘要： An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14), a second electrode (18) and a spacer layer (16). The first electrode (14) and the second electrode (18) include ferromagnetic layers (26 & 28). A spacer layer (16) is located between the ferromagnetic layer (26) of the first electrode (14) and the ferromagnetic layer (28) of the second electrode (16) for permitting tunneling current in a direction generally perpendicular to the ferromagnetic layers (26 & 28). The device includes insulative veils (34) characterized as electrically isolating the first electrode (14) and the second electrode (18), the insulative veils (34) including non-magnetic and insulating dielectric properties. Additionally disclosed is a method of fabricating the magnetic element (10) with insulative veils (34) that have been transformed from having conductive properties to insulative properties through oxygen plasma ashing techniques.
摘要翻译：一种用于磁性元件的改进和新颖的器件和制造方法，更具体地，包括第一电极（14），第二电极（18）和间隔层（16）的磁性元件（10）。第一电极（14）和第二电极（18）包括铁磁层（26和28）。间隔层（16）位于第一电极（14）的铁磁层（26）和第二电极（16）的铁磁层（28）之间，用于允许隧道电流沿大致垂直于铁磁层的方向 26和28）。该装置包括绝缘面纱（34），其特征在于电隔离第一电极（14）和第二电极（18），绝缘面纱（34）包括非磁性和绝缘的介电性质。另外公开了一种通过氧等离子体灰化技术制造具有绝缘面纱（34）的磁性元件（10）的方法，其已经从具有导电性能转变为绝缘性能。

4. 发明授权

US06835423B2 Method of fabricating a magnetic element with insulating veils 有权
标题翻译：制造具有绝缘面纱的磁性元件的方法
公开(公告)号：US06835423B2
公开(公告)日：2004-12-28
申请号：US10349702
申请日：2003-01-22
申请人： Eugene Youjun Chen , Mark Durlam , Saied N. Tehrani , Mark DeHerrera , Gloria Kerszykowski , Kelly Wayne Kyler
发明人： Eugene Youjun Chen , Mark Durlam , Saied N. Tehrani , Mark DeHerrera , Gloria Kerszykowski , Kelly Wayne Kyler
IPC分类号： H05H100
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/324 , H01F41/302 , H01L43/12 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052 , Y10T428/24917
摘要： An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14), a second electrode (18) and a spacer layer (16). The first electrode (14) and the second electrode (18) include ferromagnetic layers (26 & 28). A spacer layer (16) is located between the ferromagnetic layer (26) of the first electrode (14) and the ferromagnetic layer (28) of the second electrode (16) for permitting tunneling current in a direction generally perpendicular to the ferromagnetic layers (26 & 28). The device includes insulative veils (34) characterized as electrically isolating the first electrode (14) and the second electrode (18), the insulative veils (34) including non-magnetic and insulating dielectric properties. Additionally disclosed is a method of fabricating the magnetic element (10) with insulative veils (34) that have been transformed from having conductive properties to insulative properties through oxygen plasma ashing techniques.
摘要翻译：一种用于磁性元件的改进和新颖的器件和制造方法，更具体地，包括第一电极（14），第二电极（18）和间隔层（16）的磁性元件（10）。第一电极（14）和第二电极（18）包括铁磁层（26和28）。间隔层（16）位于第一电极（14）的铁磁层（26）和第二电极（16）的铁磁层（28）之间，用于允许隧道电流沿大致垂直于铁磁层的方向 26和28）。该装置包括绝缘面纱（34），其特征在于电隔离第一电极（14）和第二电极（18），绝缘面纱（34）包括非磁性和绝缘的介电性质。另外公开了一种通过氧等离子体灰化技术制造具有绝缘面纱（34）的磁性元件（10）的方法，其已经从具有导电性能转变为绝缘性能。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式