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    • 5. 发明申请
    • Semiconductor Device and Driving Method Thereof
    • 半导体器件及其驱动方法
    • US20080149737A1
    • 2008-06-26
    • US11959958
    • 2007-12-19
    • Kazuaki Ohshima
    • Kazuaki Ohshima
    • G06K19/06
    • G11C7/24G11C5/142
    • To provide a semiconductor device, which is capable of supplying a stable voltage to a memory and communicating wirelessly in writing data into a memory, and a driving method thereof. The semiconductor device is operated with periods which are divided into a period for receiving a signal wirelessly from a reader/writer, and a period for boosting up electric power received wirelessly from the reader/writer before being supplied to the memory. The signals transmitted from the reader/writer include timing for completion of signal transmission as information. The timing for completion of signal transmission is known by receiving the signals. After completion of signal transmission from the reader/writer, electric power received from the reader/writer starts to be boosted up, and then it is supplied to the memory in the semiconductor device.
    • 提供能够向存储器提供稳定电压并以无线方式将数据写入存储器的半导体器件及其驱动方法。 该半导体器件在被分为用于从读取器/写入器无线地接收信号的周期的周期和用于在被提供给存储器之前从读取器/写入器无线地接收的电力升高的周期操作。 从读写器发送的信号包括作为信息完成信号传输的定时。 通过接收信号来知道完成信号传输的定时。 在从读写器完成信号传输之后,从读写器接收的电力开始升高,然后提供给半导体器件中的存储器。
    • 10. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08791516B2
    • 2014-07-29
    • US13473014
    • 2012-05-16
    • Kazuaki Ohshima
    • Kazuaki Ohshima
    • H01L27/108H03K19/00H03K19/177
    • H01L27/105H01L27/0605H01L27/0688H01L27/092H01L27/108H01L27/1203H03K19/0013H03K19/1776H03K19/17772
    • A semiconductor device having a novel structure is provided. The semiconductor device includes a first p-type transistor, a second n-type transistor, a third transistor, and a fourth transistor. One of a source and a drain of the third transistor is connected to a wiring supplying first potential, and the other is connected to one of a source and a drain of the first transistor. One of a source and a drain of the second transistor is connected to the other of the source and the drain of the first transistor, and the other is connected to one of a source and a drain of the fourth transistor. The other of the source and the drain of the fourth transistor is connected to a wiring supplying second potential lower than the first potential. An oxide semiconductor material is used in channel formation regions of the third transistor and the fourth transistor.
    • 提供具有新颖结构的半导体器件。 半导体器件包括第一p型晶体管,第二n型晶体管,第三晶体管和第四晶体管。 第三晶体管的源极和漏极之一连接到提供第一电位的布线,另一个连接到第一晶体管的源极和漏极之一。 第二晶体管的源极和漏极之一连接到第一晶体管的源极和漏极中的另一个,另一个连接到第四晶体管的源极和漏极之一。 第四晶体管的源极和漏极中的另一个连接到提供低于第一电位的第二电位的布线。 在第三晶体管和第四晶体管的沟道形成区域中使用氧化物半导体材料。