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    • 7. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08243863B2
    • 2012-08-14
    • US12553131
    • 2009-09-03
    • Hidetomo Kobayashi
    • Hidetomo Kobayashi
    • H04B1/10
    • G06K19/0723H04B5/0031H04B5/0037H04L27/04H04L27/06H04Q2213/13095
    • To provide a semiconductor device which can transmit/receive data to/from a reader/writer without interruption of operation by the reader/writer or the like. A semiconductor device capable of wireless communication includes an antenna circuit, a first demodulation signal generation circuit which demodulates a signal whose modulation factor is from 95% to 100%, both inclusive, a second demodulation signal generation circuit which demodulates a signal whose modulation factor is from 95% and 100%, both inclusive and from 10% and 30%, both inclusive and a logic circuit which selects one of a demodulation signal from the first circuit and a demodulation signal from the second circuit. When the antenna circuit receives an electromagnetic wave, the logic circuit selects the demodulation signal from the second circuit, and when the antenna circuit transmits an electromagnetic wave, the logic circuit selects the demodulation signal from the first circuit.
    • 提供一种可以在读取器/写入器等不中断操作的情况下向/从读取器/写入器发送/接收数据的半导体器件。 能够进行无线通信的半导体装置包括:天线电路,对调制度为95%〜100%的信号进行解调的第一解调信号生成电路,第二解调信号生成电路,对调制度为 95%和100%,包括10%和30%,以及选择来自第一电路的解调信号和来自第二电路的解调信号之一的逻辑电路。 当天线电路接收到电磁波时,逻辑电路从第二电路中选择解调信号,当天线发送电磁波时,逻辑电路从第一电路中选择解调信号。
    • 8. 发明授权
    • System and method for converting a synchronous functional circuit to an asynchronous functional circuit
    • 将同步功能电路转换为异步功能电路的系统和方法
    • US08209645B2
    • 2012-06-26
    • US12565955
    • 2009-09-24
    • Hidetomo Kobayashi
    • Hidetomo Kobayashi
    • G06F17/50
    • G06F17/5045
    • A hierarchizing means 101 for blocking, of a first description which represents a functional circuit in an RTL, a second description and for converting the first description into a hierarchized third description; a first logic synthesis means 102 for logic synthesis of the third description; a first placement and routing means 103 for first placement and routing; a first substitution means 104 for substituting a fourth description indicating the unit circuit which is asynchronous for the second description; a second logic synthesis means 105 for logic synthesis of the fourth description; a second placement and routing means 106 for second placement and routing; a calculation means 107 for calculating a circuit on which the second placement and routing is performed; and a second substitution means 108 for substituting the circuit on which placement and routing is performed by the second placement and routing means 106 for a selected circuit on which placement and routing is performed by the first placement and routing means 103.
    • 用于阻止表示RTL中的功能电路的第一描述的第二描述和用于将第一描述转换为层次化的第三描述的层次化装置101; 用于第三描述的逻辑合成的第一逻辑合成装置102; 用于第一布置和布线的第一放置和布线装置103; 第一替代装置104,用于代替指示第二描述异步的单元电路的第四描述; 用于第四描述的逻辑合成的第二逻辑合成装置105; 用于第二布置和布线的第二布置和布线装置106; 用于计算执行第二布置和布线的电路的计算装置107; 以及第二替代装置108,用于代替由第二布置和布线装置106对由第一放置和布线装置103执行放置和布线的所选电路执行放置和布线的电路。
    • 9. 发明授权
    • Logic circuit and semiconductor device
    • 逻辑电路和半导体器件
    • US08207756B2
    • 2012-06-26
    • US12912397
    • 2010-10-26
    • Yutaka ShionoiriHidetomo Kobayashi
    • Yutaka ShionoiriHidetomo Kobayashi
    • H03K19/096
    • H01L29/7869H01L27/088H01L27/1225H03K3/0375H03K19/0016H03K19/096
    • In a logic circuit where clock gating is performed, the standby power is reduced or malfunction is suppressed. The logic circuit includes a transistor which is in an off state where a potential difference exists between a source terminal and a drain terminal over a period during which a clock signal is not supplied. A channel formation region of the transistor is formed using an oxide semiconductor in which the hydrogen concentration is reduced. Specifically, the hydrogen concentration of the oxide semiconductor is 5×1019 (atoms/cm3) or lower. Thus, leakage current of the transistor can be reduced. As a result, in the logic circuit, reduction in standby power and suppression of malfunction can be achieved.
    • 在执行时钟门控的逻辑电路中,待机功率降低或故障被抑制。 该逻辑电路包括在不提供时钟信号的时段内处于源极端子和漏极端子之间存在电位差的关断状态的晶体管。 使用其中氢浓度降低的氧化物半导体形成晶体管的沟道形成区域。 具体地说,氧化物半导体的氢浓度为5×1019(原子/ cm3)以下。 因此,可以减小晶体管的漏电流。 结果,在逻辑电路中,可以实现待机功率的降低和故障的抑制。