专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07413913B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07413913B2
公开(公告)日：2008-08-19
申请号：US11648546
申请日：2007-01-03
申请人： Kenji Maruyama , Jeffrey Scott Cross
发明人： Kenji Maruyama , Jeffrey Scott Cross
IPC分类号： H01L21/00
CPC分类号： H01L27/11502 , H01L27/11507
摘要： Two ferroelectric capacitors including a PZT film are connected to one MOS transistor. Electrodes of the ferroelectric capacitor are arranged above a main plane of a substrate parallel to the main plane. Therefore, high capacity can be obtained easily. Furthermore, a (001) direction of the PZT film is parallel to the virtual straight line linking between the two electrodes. Therefore, a direction in which an electric field is applied coincides with a direction of a polarization axis, so that high electric charge amount of remanent polarization can be obtained.
摘要翻译：包括PZT膜的两个铁电电容器连接到一个MOS晶体管。铁电电容器的电极布置在平行于主平面的基板的主平面上方。因此，容易获得高容量。此外，PZT膜的（001）方向平行于连接在两个电极之间的虚拟直线。因此，施加电场的方向与偏振轴的方向一致，从而可以获得高剩余极化电荷量。

2. 发明授权

US07176509B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07176509B2
公开(公告)日：2007-02-13
申请号：US10902082
申请日：2004-07-30
申请人： Kenji Maruyama , Jeffrey Scott Cross
发明人： Kenji Maruyama , Jeffrey Scott Cross
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L27/11502 , H01L27/11507
摘要： Two ferroelectric capacitors including a PZT film are connected to one MOS transistor. Electrodes of the ferroelectric capacitor are arranged above a main plane of a substrate parallel to the main plane. Therefore, high capacity can be obtained easily. Furthermore, a (001) direction of the PZT film is parallel to the virtual straight line linking between the two electrodes. Therefore, a direction in which an electric field is applied coincides with a direction of a polarization axis, so that high electric charge amount of remanent polarization can be obtained.
摘要翻译：包括PZT膜的两个铁电电容器连接到一个MOS晶体管。铁电电容器的电极布置在平行于主平面的基板的主平面上方。因此，容易获得高容量。此外，PZT膜的（001）方向平行于连接在两个电极之间的虚拟直线。因此，施加电场的方向与偏振轴的方向一致，从而可以获得高剩余极化电荷量。

3. 发明授权

US09186696B2 Coating apparatus including a chamber, sensor, removal unit and control device for application of liquid to a substrate 有权
标题翻译：涂覆装置包括用于向基材施加液体的室，传感器，去除单元和控制装置
公开(公告)号：US09186696B2
公开(公告)日：2015-11-17
申请号：US12874984
申请日：2010-09-02
申请人： Hidenori Miyamoto , Kenji Maruyama , Tadahiko Hirakawa , Koichi Misumi
发明人： Hidenori Miyamoto , Kenji Maruyama , Tadahiko Hirakawa , Koichi Misumi
IPC分类号： B05C11/00 , B05C11/10 , B05C5/00 , C23C16/52 , H01L21/67 , H01L21/677 , H01L31/0216 , H01L31/032 , H01L31/18 , B41J2/045
CPC分类号： B05C11/1015 , B05C5/005 , B41J2/04566 , C23C16/52 , H01L21/6715 , H01L21/67173 , H01L21/6776 , H01L31/02167 , H01L31/0322 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： A coating apparatus including a coating part which applies a liquid material including an oxidizable metal on a substrate, a chamber having a coating space in which the coating part applies the liquid material on the substrate and a transport space into which the substrate is transported, and a removal unit which removes the liquid material from the inside of the chamber when at least one of oxygen concentration and humidity inside the chamber exceeds a threshold value.
摘要翻译：一种涂布装置，包括：涂布部，其将包含可氧化金属的液体材料涂布在基板上;具有涂布空间的室，其中所述涂布部将所述液体材料施加到所述基板上;以及输送空间，所述基板被输送到所述输送空间中;以及当所述室内的氧浓度和湿度中的至少一个超过阈值时，所述去除单元从所述室的内部除去所述液体材料。

4. 发明授权

US07898012B2 Capacitor and semiconductor device having a ferroelectric material 失效
标题翻译：具有铁电材料的电容器和半导体器件
公开(公告)号：US07898012B2
公开(公告)日：2011-03-01
申请号：US12285156
申请日：2008-09-30
申请人： Kenji Maruyama
发明人： Kenji Maruyama
IPC分类号： H01L31/062 , H01L31/119 , H01L29/76
CPC分类号： H01L27/11502 , H01L21/76838 , H01L27/11507 , H01L28/55 , H01L28/90
摘要： A capacitor includes a pair of electrodes and a ferroelectric film sandwiched between the electrodes. The electrodes are provided perpendicular to the direction of the polarization axis of the ferroelectric film.
摘要翻译：电容器包括夹在电极之间的一对电极和铁电体膜。电极垂直于铁电体膜的偏振轴的方向设置。

5. 发明授权

US07358028B2 Chemically amplified positive photo resist composition and method for forming resist pattern 有权
标题翻译：化学放大的正光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07358028B2
公开(公告)日：2008-04-15
申请号：US10522036
申请日：2004-05-19
申请人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
发明人： Kenji Maruyama , Masaki Kurihara , Ken Miyagi , Satoshi Niikura , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta , Toshihiro Yamaguchi , Kousuke Doi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0392 , Y10S430/106 , Y10S430/12 , Y10S430/122
摘要： The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle. A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.
摘要翻译：本发明提供了作为瓶中的抗蚀剂溶液的储存稳定性优异的化学增幅型正性光致抗蚀剂组合物。将酚醛清漆树脂或羟基苯乙烯类树脂与交联剂反应，得到轻微碱溶性或碱不溶性树脂，其具有在酸存在下在碱溶液中的溶解度增强的性质，然后将其溶解于有机溶剂与（B）在辐射照射下产生酸的化合物一起获得化学扩增型正性光致抗蚀剂组合物，其中酸成分的含量为10ppm以下。

6. 发明授权

US07329478B2 Chemical amplified positive photo resist composition and method for forming resist pattern 有权
标题翻译：化学放大正光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07329478B2
公开(公告)日：2008-02-12
申请号：US10528617
申请日：2004-05-20
申请人： Yusuke Nakagawa , Shinichi Hidesaka , Kenji Maruyama , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta
发明人： Yusuke Nakagawa , Shinichi Hidesaka , Kenji Maruyama , Satoshi Shimatani , Masahiro Masujima , Kazuyuki Nitta
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0392 , G03F7/168 , Y10S430/106
摘要： To provide a chemical amplification type positive photoresist composition, which has high sensitivity, high heat resistance and high resolution (high contrast) and is capable of suppressing an undulation phenomenon, and a method for formation of a resist pattern, a chemical amplification type positive photoresist composition comprising (A) an alkali soluble resin comprising a hydroxystyrene constituent unit (a1) and a styrene constituent unit (a2), (B) a crosslinking agent, (C) a photo acid generator, and an organic solvent is prepared and a resist pattern is formed by using the same.
摘要翻译：为了提供具有高灵敏度，高耐热性和高分辨率（高对比度）并且能够抑制起伏现象的化学放大型正性光致抗蚀剂组合物，以及形成抗蚀剂图案的方法，化学放大型正性光致抗蚀剂制备包含（A）包含羟基苯乙烯构成单元（a1）和苯乙烯构成单元（a2）的碱溶性树脂，（B）交联剂，（C）光酸反应器和有机溶剂的组合物，通过使用它们形成图案。

7. 发明申请

US20060160719A1 Flavor and fragrance compositions 有权
公开(公告)号：US20060160719A1
公开(公告)日：2006-07-20
申请号：US11333367
申请日：2006-01-18
申请人： Makoto Emura , Satoshi Masumura , Kenji Maruyama , Takeshi Yamamoto
发明人： Makoto Emura , Satoshi Masumura , Kenji Maruyama , Takeshi Yamamoto
IPC分类号： A61K47/00 , A61K8/46
CPC分类号： A61K8/46 , A61Q13/00
摘要： The present invention provides a flavor and fragrance composition which comprises, as the active ingredient, an optically active (1S)-8-mercaptomenthone having an S-form/R-form mixing ratio for the configuration at the 4-position in the range of from 65:35 to 95:5 by weight, wherein the flavor and fragrance composition is for use in food and beverage, fragrances and cosmetics, pharmaceuticals or oral compositions and the like; a product which is scented with the flavor and fragrance composition; and a method for enhancing or modulating odor of the flavor and fragrance composition by adding the optically active (1S)-8-mercaptomenthone.

8. 发明授权

US06974985B2 Capacitor and method for fabricating the same, and semiconductor device and method for fabricating the same 有权
标题翻译：电容器及其制造方法，半导体器件及其制造方法
公开(公告)号：US06974985B2
公开(公告)日：2005-12-13
申请号：US09960398
申请日：2001-09-24
申请人： Masaki Kurasawa , Kazuaki Kurihara , Kenji Maruyama
发明人： Masaki Kurasawa , Kazuaki Kurihara , Kenji Maruyama
IPC分类号： H01L27/105 , H01L21/02 , H01L21/8246 , H01L27/108
CPC分类号： H01L28/55 , H01L28/91
摘要： The semiconductor device comprises: a memory cell transistor formed on a semiconductor substrate 10; insulation films 22, 30 covering the memory cell transistor; a buffer structure 40 formed on the insulation film; and a capacitor including a lower electrode 42 formed on the buffer structure 40 and electrically connected to the source/drain diffused layer 20; a capacitor dielectric film 44 formed on the lower electrode 42, and formed of a perovskite ferroelectric material having a smaller thermal expansion coefficient than that of the buffer structure 40 and having a crystal oriented substantially perpendicular to a surface of the lower electrode 42. The buffer structure for mitigating the influence of the stress from the substrate is formed below the lower electrode, whereby a polarization direction of the capacitor dielectric film can be made parallel with a direction of an electric field applied between the upper electrode and the lower electrode. An intrinsic polarization of the ferroelectric film can be utilized as it is.
摘要翻译：半导体器件包括：形成在半导体衬底10上的存储单元晶体管; 覆盖存储单元晶体管的绝缘膜22,30; 形成在绝缘膜上的缓冲结构40; 以及电容器，包括形成在缓冲结构40上并电连接到源/漏扩散层20的下电极42; 形成在下部电极42上的电容电介质膜44，由与缓冲结构体40的热膨胀系数相比具有较小的热膨胀系数的钙钛矿型铁电体材料形成，并具有大致垂直于下部电极42的表面取向的晶体。用于减轻来自基板的应力的影响的缓冲结构形成在下电极的下方，由此可以使电容器电介质膜的极化方向与施加在上电极和下电极之间的电场的方向平行。可以直接利用铁电体膜的固有极化。

9. 发明授权

US06688520B2 Authentication circuit, semiconductor device, process for operating the same, IC card, and process for operating the same 失效
标题翻译：认证电路，半导体器件，操作过程，IC卡及其操作过程
公开(公告)号：US06688520B2
公开(公告)日：2004-02-10
申请号：US10294711
申请日：2002-11-15
申请人： Kenji Maruyama
发明人： Kenji Maruyama
IPC分类号： G06K708
CPC分类号： G06K19/07372 , G06K19/073
摘要： An authentication circuit containing at least two types of ferroelectrics having different Curie temperatures and properties of retaining charges by residual polarization. An authentication signal stored in one of the ferroelectrics is erased when the ferroelectrics are held in a Curie temperature or more of the one of the ferroelectrics and below a Curie temperature of the ferroelectrics 2. In an authentication circuit, preferably one of the ferroelectrics outputs a primary authentication signal and, when the ferroelectric 2 receives the primary authentication signal, the ferroelectric 2 outputs a secondary authentication signal, and a plurality of ferroelectrics are formed of two or more types of elements and have different element compositions, the two or more elements are selected from Na, K, Ba, Cd, Hf, O, Pb, Zr, Ti, La, Ca, Sr, Tl, Bi, a rare earth element, Nb, Ta, W, Mo, Fe, Co, and Cr.
摘要翻译：包含至少两种具有不同居里温度的铁电体和通过残余极化保持电荷的性质的认证电路。当铁电体保持在一个铁电体的居里温度以上且低于铁电体2的居里温度时，存储在铁电体之一中的认证信号被擦除。在认证电路中，优选地，铁电体中的一个输出初级认证信号，当铁电体2接收到初始认证信号时，铁电体2输出二次认证信号，多个铁电体由两种以上的元件形成，具有不同的元件组成，选自Na，K，Ba，Cd，Hf，O，Pb，Zr，Ti，La，Ca，Sr，Tl，Bi，稀土元素，Nb，Ta，W，Mo，Fe，Co和Cr。

10. 发明授权

US5324386A Method of growing group II-IV mixed compound semiconductor and an apparatus used therefor 失效
标题翻译：生产II-IV族混合化合物半导体的方法及其使用的装置
公开(公告)号：US5324386A
公开(公告)日：1994-06-28
申请号：US850023
申请日：1992-03-12
申请人： Satoshi Murakami , Yoichiro Sakachi , Hironori Nishino , Tetsuo Saito , Kenji Maruyama
发明人： Satoshi Murakami , Yoichiro Sakachi , Hironori Nishino , Tetsuo Saito , Kenji Maruyama
IPC分类号： C30B25/02 , C30B25/14 , C30B25/10
CPC分类号： C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/48
摘要： A method of growing a mixed compound semiconductor layer comprises the following steps of: providing a reaction chamber comprising a rotatable substrate stage, a plurality of nozzles aligned in a line, the nozzle being arranged vertical to a substrate surface, and a mechanism for moving the substrate stage at least in the nozzle alignment direction and parallel to the substrate surface; disposing the substrate on the substrate stage which is rotated around its axis; flowing a mixed source gas into the reaction chamber through the nozzles, thereby a flow rate of the most reactive gas in the mixed source gas flowing through each nozzle being controlled to increase depending on a distance between the center axis of the substrate rotation and the nozzle; and heating the substrate. An apparatus for applying the above method comprises a particular feature for moving the substrate stage.
摘要翻译：一种生长混合化合物半导体层的方法包括以下步骤：提供一个反应室，该反应室包括可转动的基底载物台，多个沿一行排列的喷嘴，该喷嘴垂直于基片表面布置，至少在喷嘴对准方向上并平行于衬底表面; 将衬底设置在围绕其轴线旋转的衬底台上; 通过喷嘴将混合源气体流入反应室，从而控制流过每个喷嘴的混合源气体中最活泼气体的流速，这取决于基板旋转的中心轴线与喷嘴之间的距离 ; 并加热衬底。用于应用上述方法的装置包括用于移动衬底台的特定特征。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式