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    • 9. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07957195B2
    • 2011-06-07
    • US12630295
    • 2009-12-03
    • Masamichi FujitoMakoto MizunoTakahiro YokoyamaKenji KawadaTakashi IwaseYasunobu AokiTakashi KurafujiTomohiro UchiyamaShuichi SatoYuji Uji
    • Masamichi FujitoMakoto MizunoTakahiro YokoyamaKenji KawadaTakashi IwaseYasunobu AokiTakashi KurafujiTomohiro UchiyamaShuichi SatoYuji Uji
    • G11C16/00
    • G11C7/04G11C16/0441G11C16/10G11C16/28
    • The semiconductor device includes a nonvolatile memory, having a memory array containing 1-bit twin cells, each composed of electrically rewritable first and second storage devices, the first and second storage devices holding binary data according to difference of their threshold voltages, and having different retention characteristics depending on difference of the binary data thereof; a read circuit for differentially amplifying complementary data output from the first and second storage devices of the twin cell selected for read, and judging information stored in the twin cell; and a control circuit. Two memory cells constituting a twin cell are arranged to hold different data. Therefore, even when the retention performance of one memory cell deteriorates, the difference between data held by the two memory cells can be maintained. Hence, differential amplification of such difference enables acquisition of proper stored information. Thus, retention performance of an electrically rewritable nonvolatile memory cell is improved.
    • 半导体器件包括非易失性存储器,具有包含1比特双胞胞的存储器阵列,每个存储器阵列由电可重写的第一和第二存储器件组成,第一和第二存储器件根据其阈值电压的差异保持二进制数据,并具有不同的 保留特性取决于其二进制数据的差异; 用于差分放大从被选择读取的双胞胎的第一和第二存储装置输出的互补数据的读取电路,以及判断存储在双胞胎中的信息; 和控制电路。 布置构成双胞胎的两个存储单元以保存不同的数据。 因此,即使一个存储单元的保持性能劣化,也能够维持由两个存储单元保持的数据之间的差异。 因此,这种差异的差分放大使得能够获得正确的存储信息。 因此,提高了电可重写非易失性存储单元的保持性能。
    • 10. 发明授权
    • Method for continuously electroplating wire or the like and apparatus
therefor
    • 连续电镀线等的方法及其装置
    • US4420377A
    • 1983-12-13
    • US260779
    • 1981-05-05
    • Shoji ShigaAkitoshi SuzukiYasuo GomaKenji Kawada
    • Shoji ShigaAkitoshi SuzukiYasuo GomaKenji Kawada
    • C25D7/06C25D17/06
    • C25D7/0607
    • Method and apparatus for continuously electroplating wire or the like wherein two or more drums combine a power supply with a wire turn direction, each drum having a vertical and rotatable shaft, are provided; a wire or the like to be electroplated is wound on the drums in multiple stages so as to be run; an electroplating cell is positioned between the drums so that the wire to be electroplated is arranged to pass in and out of the electroplating cell in multiple stages and repeatedly; and, particularly, an end of the electroplating cell is provided with a slit for passage of the wire to be electroplated, the slit being provided with weir plates placed one on top of another such that the weir plates put each of wires in multiple stages running through the electroplating cell between upper and lower weir plates and passage holes for running the wires at multiple stages are formed at joints between individual weir plates.
    • 提供用于连续电镀线等的方法和装置,其中两个或更多个鼓组合电源与线转方向,每个鼓具有垂直和可旋转的轴; 要电镀的线等以多个阶段缠绕在鼓上以便运行; 电镀槽位于鼓之间,使得要电镀的电线被布置成多次并重复地进出电镀电池; 特别地,电镀单元的端部设置有用于电镀线的通道的狭缝,该狭缝设置有一个放置在另一个之上的堰板,使得堰板将每根导线放置在多个级中 通过上堰板和下堰板之间的电镀槽,在各个堰板之间的接头处形成用于在多个阶段运行导线的通孔。