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1. 发明申请

US20060291097A1 MAGNETIC SENSING ELEMENT HAVING REACTIVE-ION-ETCHING STOP LAYER AND PROCESS FOR PRODUCING SAME 有权
标题翻译：具有反应性离子蚀刻停止层的磁感应元件及其制造方法
公开(公告)号：US20060291097A1
公开(公告)日：2006-12-28
申请号：US11424495
申请日：2006-06-15
申请人： Kenji Honda , Naohiro Ishibashi , Daigo Aoki , Yasuo Hayakawa , Yoshihiro Nishiyama , Toshihiro Kobayashi
发明人： Kenji Honda , Naohiro Ishibashi , Daigo Aoki , Yasuo Hayakawa , Yoshihiro Nishiyama , Toshihiro Kobayashi
IPC分类号： G11B5/147 , G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3912 , G11B5/3932 , G11B2005/3996 , H01F10/3254 , H01F41/308
摘要： A magnetic sensing element including a laminate and a bias layer is provided. A first reactive-ion-etching (RIE) stop layer is disposed on a free magnetic layer. Second RIE stop layers are disposed on bias layers. The first and second RIE stop layers function as stop layers when layers on the first and second RIE stop layers are removed by reactive ion etching in a production process. Reactive ion etching is completed when the first RIE stop layer and the second RIE stop layers are exposed, the first and second RIE stop layers being disposed at almost the same height. Also provided is a process for producing the magnetic sensing element.
摘要翻译：提供了包括层叠体和偏置层的磁感应元件。第一反应离子蚀刻（RIE）停止层设置在自由磁性层上。第二RIE停止层设置在偏置层上。当生产过程中通过反应离子蚀刻去除第一和第二RIE停止层上的层时，第一和第二RIE停止层用作停止层。当第一RIE停止层和第二RIE停止层暴露时，第一和第二RIE停止层设置在几乎相同的高度处，完成反应离子蚀刻。还提供了一种用于制造磁感测元件的方法。

2. 发明申请

US20060279882A1 MAGNETIC DETECTING ELEMENT HAVING RIE-RESISTANT FILM AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：具有抗静电膜的磁性检测元件及其制造方法
公开(公告)号：US20060279882A1
公开(公告)日：2006-12-14
申请号：US11421732
申请日：2006-06-01
申请人： Kenji Honda , Naohiro Ishibashi , Yasuo Hayakawa , Yoshihiro Nishiyama , Daigo Aoki , Toshihiro Kobayashi
发明人： Kenji Honda , Naohiro Ishibashi , Yasuo Hayakawa , Yoshihiro Nishiyama , Daigo Aoki , Toshihiro Kobayashi
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/3932 , B82Y10/00 , G01R33/093 , G11B5/3906 , G11B5/3909 , H01L43/12
摘要： There is provided a magnetic detecting element and a method of manufacturing the same. An intermediate layer and a corrosion preventing layer are laminated on a free magnetic layer. The corrosion preventing layer prevents the free magnetic layer from corroding due to reactive ion etching. Therefore, a laminator can be correspondingly formed in a predetermined shape, and the free magnetic layer can be prevented from corroding. As a result, it is possible to manufacture a magnetic detecting element having excellent reproduction output.
摘要翻译：提供了一种磁检测元件及其制造方法。在自由磁性层上层叠中间层和防腐蚀层。防腐蚀层防止自由磁性层由于反应离子蚀刻而腐蚀。因此，层叠机可以相应地形成为预定的形状，并且可以防止自由磁性层腐蚀。结果，可以制造具有优异的再现输出的磁性检测元件。

3. 发明申请

US20070115595A1 CPP-TYPE THIN-FILM MAGNETIC HEAD AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译： CPP型薄膜磁头及其制造方法
公开(公告)号：US20070115595A1
公开(公告)日：2007-05-24
申请号：US11558345
申请日：2006-11-09
申请人： Kenji Honda , Naohiro Ishibashi , Daigo Aoki , Yasuo Hayakawa , Yoshihiro Nishiyama , Toshihiro Kobayashi
发明人： Kenji Honda , Naohiro Ishibashi , Daigo Aoki , Yasuo Hayakawa , Yoshihiro Nishiyama , Toshihiro Kobayashi
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3912 , G11B5/398
摘要： a CCP-type thin-film magnetic head and a manufacturing method thereof are provided. The CCP-type thin-film magnetic head includes a thin-film magnetic head element formed between the upper shield layer and the lower shield layer, and a side fill gap layer securing the insulating property, which is formed from both end faces of the thin-film magnetic head element, wherein a top surface of the lower shield layer is formed in a non-flat surface having a convex portion disposed at a center in a track width direction and a concave portion disposed at both sides in a track width direction of the convex portion, the thin-film magnetic head element is formed on the convex portion, and an buried gap layer contacting the side fill gap layer is formed in the concave portion.
摘要翻译：提供了一种CCP型薄膜磁头及其制造方法。 CCP型薄膜磁头包括形成在上屏蔽层和下屏蔽层之间的薄膜磁头元件，以及确保绝缘性能的侧填充间隙层，其由薄的两个端面形成所述下屏蔽层的上表面形成在具有设置在轨道宽度方向的中心的凸部的非平坦面和设置在轨道宽度方向的两侧的凹部凸部，薄膜磁头元件形成在凸部上，并且在凹部中形成与侧填充间隙层接触的掩埋间隙层。

4. 发明授权

US07623324B2 Magnetic sensing element having reactive-ion-etching stop layer and process for producing same 有权
标题翻译：具有反应离子蚀刻停止层的磁感应元件及其制造方法
公开(公告)号：US07623324B2
公开(公告)日：2009-11-24
申请号：US11424495
申请日：2006-06-15
申请人： Kenji Honda , Naohiro Ishibashi , Daigo Aoki , Yasuo Hayakawa , Yoshihiro Nishiyama , Toshihiro Kobayashi
发明人： Kenji Honda , Naohiro Ishibashi , Daigo Aoki , Yasuo Hayakawa , Yoshihiro Nishiyama , Toshihiro Kobayashi
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3912 , G11B5/3932 , G11B2005/3996 , H01F10/3254 , H01F41/308
摘要： A magnetic sensing element including a laminate and a bias layer is provided. A first reactive-ion-etching (RIE) stop layer is disposed on a free magnetic layer. Second RIE stop layers are disposed on bias layers. The first and second RIE stop layers function as stop layers when layers on the first and second RIE stop layers are removed by reactive ion etching in a production process. Reactive ion etching is completed when the first RIE stop layer and the second RIE stop layers are exposed, the first and second RIE stop layers being disposed at almost the same height. Also provided is a process for producing the magnetic sensing element.
摘要翻译：提供了包括层叠体和偏置层的磁感应元件。第一反应离子蚀刻（RIE）停止层设置在自由磁性层上。第二RIE停止层设置在偏置层上。当生产过程中通过反应离子蚀刻去除第一和第二RIE停止层上的层时，第一和第二RIE停止层用作停止层。当第一RIE停止层和第二RIE停止层暴露时，第一和第二RIE停止层设置在几乎相同的高度处，完成反应离子蚀刻。还提供了一种用于制造磁感测元件的方法。

5. 发明授权

US07365949B2 CPP giant magnetoresistive head including pinned magnetic layer that extends in the height direction 有权
标题翻译： CPP巨磁阻头包括在高度方向上延伸的钉扎磁性层
公开(公告)号：US07365949B2
公开(公告)日：2008-04-29
申请号：US11141543
申请日：2005-05-31
申请人： Yasuo Hayakawa , Yoshihiro Nishiyama , Digo Aoki , Masamichi Saito , Naohiro Ishibashi , Kenji Honda
发明人： Yasuo Hayakawa , Yoshihiro Nishiyama , Digo Aoki , Masamichi Saito , Naohiro Ishibashi , Kenji Honda
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/39 , G11B5/3163 , G11B5/398
摘要： A CPP giant magnetoresistive head includes a lower shield layer; an upper shield layer; and a giant magnetoresistive element (GMR) between the lower shield layer and the upper shield layer. The GMR includes a nonmagnetic material layer; a pinned magnetic layer; and a free magnetic layer. The pinned layer and the free layer are laminated with the nonmagnetic layer provided therebetween. A current flows perpendicularly to a film plane of the GMR, the pinned magnetic layer extends in the height direction longer than in a track-width direction and includes a first portion in the GMR. The first portion is disposed above or below the nonmagnetic layer and the free layer. A second portion is behind the nonmagnetic layer and the free layer in the height direction. The first and second portions are in the same plane. The width of the pinned layer in the track-width direction in the first portion is greater than that in the second portion.
摘要翻译： CPP巨磁阻头包括下屏蔽层; 上屏蔽层; 和在下屏蔽层和上屏蔽层之间的巨磁阻元件（GMR）。 GMR包括非磁性材料层; 钉扎磁性层; 和自由磁性层。被钉扎层和自由层与其间设置的非磁性层层叠。 A电流垂直于GMR的膜平面流动，被钉扎的磁性层在高度方向上比在轨道宽度方向上延伸更长，并且包括GMR中的第一部分。第一部分设置在非磁性层和自由层的上方或下方。第二部分在非磁性层的后面，高度方向上是自由层。第一和第二部分在同一平面内。第一部分中的钉扎宽度方向上的被钉扎层的宽度大于第二部分的宽度。

6. 发明申请

US20050270703A1 CPP giant magnetoresistive head including pinned magnetic layer that extends in the height direction 有权
标题翻译： CPP巨磁阻头包括在高度方向上延伸的钉扎磁性层
公开(公告)号：US20050270703A1
公开(公告)日：2005-12-08
申请号：US11141543
申请日：2005-05-31
申请人： Yasuo Hayakawa , Yoshihiro Nishiyama , Digo Aoki , Masamichi Saito , Naohiro Ishibashi , Kenji Honda
发明人： Yasuo Hayakawa , Yoshihiro Nishiyama , Digo Aoki , Masamichi Saito , Naohiro Ishibashi , Kenji Honda
IPC分类号： G11B5/39 , G11B5/127 , G11B5/33 , H01L43/08
CPC分类号： G11B5/39 , G11B5/3163 , G11B5/398
摘要： A CPP giant magnetoresistive head includes a lower shield layer; an upper shield layer; and a giant magnetoresistive element (GMR) between the lower shield layer and the upper shield layer. The GMR includes a nonmagnetic material layer; a pinned magnetic layer; and a free magnetic layer. The pinned layer and the free layer are laminated with the nonmagnetic layer provided therebetween. A current flows perpendicularly to a film plane of the GMR, the pinned magnetic layer extends in the height direction longer than in a track-width direction and includes a first portion in the GMR. The first portion is disposed above or below the nonmagnetic layer and the free layer. A second portion is behind the nonmagnetic layer and the free layer in the height direction. The first and second portions are in the same plane. The width of the pinned layer in the track-width direction in the first portion is greater than that in the second portion.
摘要翻译： CPP巨磁阻头包括下屏蔽层; 上屏蔽层; 和在下屏蔽层和上屏蔽层之间的巨磁阻元件（GMR）。 GMR包括非磁性材料层; 钉扎磁性层; 和自由磁性层。被钉扎层和自由层与其间设置的非磁性层层叠。 A电流垂直于GMR的膜平面流动，被钉扎的磁性层在高度方向上比在轨道宽度方向上延伸更长，并且包括GMR中的第一部分。第一部分设置在非磁性层和自由层的上方或下方。第二部分在非磁性层的后面，高度方向上是自由层。第一和第二部分在同一平面内。第一部分中的钉扎宽度方向上的被钉扎层的宽度大于第二部分的宽度。

7. 发明授权

US06844998B2 Magnetoresistive sensor capable of narrowing gap and track width 失效
标题翻译：磁阻传感器能够缩小间隙和轨道宽度
公开(公告)号：US06844998B2
公开(公告)日：2005-01-18
申请号：US10103359
申请日：2002-03-20
申请人： Daigo Aoki , Kenji Honda , Kiyoshi Sato , Naoya Hasegawa , Yukie Nakazawa
发明人： Daigo Aoki , Kenji Honda , Kiyoshi Sato , Naoya Hasegawa , Yukie Nakazawa
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08
CPC分类号： G11B5/3903 , H01L43/08
摘要： Assuming that a distance between an upper shield layer and a lower shield layer in an area, which overlaps only a first electrode layer, but does not overlap a second electrode layer, is G1s, and a distance between the upper shield layer and the lower shield layer at a position in alignment with a center of a multilayered film is G1c, a difference in value between G1s and G1c is set to be not larger than a predetermined value, whereby an effective track (read) width can be reduced.
摘要翻译：假设在仅与第一电极层重叠但不与第二电极层重叠的区域中的上屏蔽层和下屏蔽层之间的距离为G1s，并且上屏蔽层和下屏蔽层之间的距离在与多层膜的中心对准的位置处的层是G1c，G1s和G1c之间的值之差被设定为不大于预定值，从而可以减少有效的轨迹（读取）宽度。

8. 发明授权

US07102858B2 Thin-film electrode layer including β-ta and thin-film magnetic head using the same 有权
标题翻译：包括β-ta的薄膜电极层和使用其的薄膜磁头
公开(公告)号：US07102858B2
公开(公告)日：2006-09-05
申请号：US10369058
申请日：2003-02-18
申请人： Akira Takahashi , Jun Takahashi , Yuko Kawasaki , Kenji Honda , Naohiro Ishibashi , Eiji Umetsu
发明人： Akira Takahashi , Jun Takahashi , Yuko Kawasaki , Kenji Honda , Naohiro Ishibashi , Eiji Umetsu
IPC分类号： B11B5/39
CPC分类号： G11B5/3903 , G11B5/313 , G11B5/3163 , G11B5/3932 , Y10T29/49052
摘要： A thin-film electrode layer having a superior electromigration resistance is disclosed. The thin-film electrode layer includes a first base layer composed of β-Ta, a main conductive layer composed of Au, and a protective layer. The protective layer is a composite of a Cr sublayer and an α-Ta sublayer. A thin-film magnetic head having the thin-film electrode layers and a method for forming electrodes in the thin-film magnetic head are also disclosed.
摘要翻译：公开了具有优异的耐迁移性的薄膜电极层。薄膜电极层包括由β-Ta构成的第一基底层，由Au构成的主导电层和保护层。保护层是Cr子层和α-Ta子层的复合物。还公开了一种具有薄膜电极层的薄膜磁头和用于在薄膜磁头中形成电极的方法。

9. 发明授权

US06791804B2 Magnetoresistive-effect device and method for manufacturing the same 失效
标题翻译：磁阻效应器件及其制造方法
公开(公告)号：US06791804B2
公开(公告)日：2004-09-14
申请号：US10337479
申请日：2003-01-06
申请人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
发明人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Yoshihiko Kakihara
IPC分类号： G11B539
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B2005/3996 , H01L43/12 , Y10T29/49044
摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
摘要翻译：磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。在多层膜上形成电极层。在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。不敏感区域仅增加直流电阻。通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

10. 发明授权

US06690554B2 Magnetoresistive-effect device with extended AFM layer and method for manufacturing the same 失效
标题翻译：具有扩展AFM层的磁阻效应器件及其制造方法
公开(公告)号：US06690554B2
公开(公告)日：2004-02-10
申请号：US10337188
申请日：2003-01-06
申请人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Kiyoshi Sato , Yoshihiko Kakihara
发明人： Daigo Aoki , Naoya Hasegawa , Kenji Honda , Kiyoshi Sato , Yoshihiko Kakihara
IPC分类号： G11B539
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B2005/3996 , H01L43/12 , Y10T29/49044
摘要： A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
摘要翻译：磁阻效应器件包括多层膜，布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。在多层膜上形成电极层。在布置在多层的两侧的硬偏置层的影响下，形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。不敏感区域仅增加直流电阻。通过将电极层延伸到多层膜的不敏感区域上，感测电流有效地从电极层流入多层膜。在电极层和多层膜之间的接合区域增加的同时，直流电阻降低，同时改善了器件的再现特性。

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