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1. 发明授权

US07038881B2 Magnetic head for perpendicular recording including a main pole having a pole tip with three tapered sides 失效
标题翻译：用于垂直记录的磁头，包括具有三个锥形侧面的极尖的主极
公开(公告)号：US07038881B2
公开(公告)日：2006-05-02
申请号：US10648344
申请日：2003-08-27
申请人： Kenchi Ito , Yoshiaki Kawato , Masafumi Mochizuki
发明人： Kenchi Ito , Yoshiaki Kawato , Masafumi Mochizuki
IPC分类号： G11B5/187 , G11B5/39
CPC分类号： G11B5/012 , G11B5/1278 , G11B5/1871 , G11B5/4886 , G11B2005/0029 , Y10T29/49052
摘要： The invention provides a magnetic head for perpendicular recording capable of recording with high linear recording density and high track density, and a magnetic disk drive incorporating the same. In order to achieve this, one or more sides of the main pole of the magnetic head for perpendicular recording except for the trailing side are formed in a taper with an appropriate angle against the tip surface of the main pole, and the yoke whose widest principal plane is in parallel to the tip surface is provided on the bottom of the main pole.Thereby, the invention achieves the magnetic head for perpendicular recording that generates a sufficiently high magnetic field, and assumes a sharp gradient of magnetic field on the trailing side. By incorporating this magnetic head, a magnetic disk drive capable of handling high linear recording density can be produced.
摘要翻译：本发明提供一种用于能够以高线性记录密度和高轨道密度进行记录的垂直记录磁头和包含该磁头的磁盘驱动器。为了实现这一点，用于垂直记录的磁头的主极的除了后侧之外的一个或多个侧面以相对于主极的尖端表面具有适当角度的锥形形成，并且最主要的轭平面与顶表面平行设置在主极的底部。因此，本发明实现了用于垂直记录的磁头，其产生足够高的磁场，并且在后侧呈现尖锐的磁场梯度。通过并入该磁头，可以产生能够处理高线性记录密度的磁盘驱动器。

2. 发明申请

US20050163962A1 Magnetic recording media for thermo-magnetic printing, magnetic recording method utilizing thereof and magnetic disk recording apparatus 有权
标题翻译：用于热磁性印刷的磁记录介质，利用其的磁记录方法和磁盘记录装置
公开(公告)号：US20050163962A1
公开(公告)日：2005-07-28
申请号：US10893887
申请日：2004-07-20
申请人： Yoshiaki Kawato , Kenchi Ito
发明人： Yoshiaki Kawato , Kenchi Ito
IPC分类号： G11B5/02 , G11B5/64 , G11B5/65 , G11B5/66 , G11B5/738 , G11B11/10 , G11B11/105
CPC分类号： G11B5/656 , G11B5/65 , G11B5/66 , Y10T428/265
摘要： A perpendicular magnetic recording medium for thermo-magnetic printing has an ultra-high recording density and is resistant to thermal decay of magnetization. An intermediate layer of the medium is provided between a first recording layer using a low-noise Co alloy ferromagnetic substance and a second recording layer using a ferrimagnetic substance (e.g., a rare-earth element-transition metal compound) having a compensation temperature below an operation ambient temperature. A magnetic field is applied thereto to form a magnetization pattern on the first recording layer. It is then heated-up to be printed onto the second recording layer, which has a higher coercivity at the ambient temperature, and a recording field is suitably set to form a magnetization pattern only on the first recording layer. The magnetization pattern is printed from the first recording layer to the second recording layer.
摘要翻译：用于热磁性印刷的垂直磁记录介质具有超高记录密度，并且耐磁化热衰减。介质的中间层设置在使用低噪声Co合金铁磁性物质的第一记录层和使用补偿温度低于1的亚铁磁物质（例如，稀土元素 - 过渡金属化合物）的第二记录层之间操作环境温度。施加磁场以在第一记录层上形成磁化模式。然后将其加热印刷到在环境温度下具有较高矫顽力的第二记录层上，并且适当地设置记录场以仅在第一记录层上形成磁化图案。磁化图案从第一记录层印刷到第二记录层。

3. 发明授权

US07274626B2 Magneto-optical recording using a heating element 有权
标题翻译：使用加热元件的磁光记录
公开(公告)号：US07274626B2
公开(公告)日：2007-09-25
申请号：US10893887
申请日：2004-07-20
申请人： Yoshiaki Kawato , Kenchi Ito
发明人： Yoshiaki Kawato , Kenchi Ito
IPC分类号： G11B11/00
CPC分类号： G11B5/656 , G11B5/65 , G11B5/66 , Y10T428/265
摘要： A perpendicular magnetic recording medium for thermo-magnetic printing has an ultra-high recording density and is resistant to thermal decay of magnetization. An intermediate layer of the medium is provided between a first recording layer using a low-noise Co alloy ferromagnetic substance and a second recording layer using a ferrimagnetic substance (e.g., a rare-earth element-transition metal compound) having a compensation temperature below an operation ambient temperature. A magnetic field is applied thereto to form a magnetization pattern on the first recording layer. It is then heated-up to be printed onto the second recording layer, which has a higher coercivity at the ambient temperature, and a recording field is suitably set to form a magnetization pattern only on the first recording layer. The magnetization pattern is printed from the first recording layer to the second recording layer.
摘要翻译：用于热磁性印刷的垂直磁记录介质具有超高记录密度，并且耐磁化热衰减。介质的中间层设置在使用低噪声Co合金铁磁性物质的第一记录层和使用补偿温度低于1的亚铁磁物质（例如，稀土元素 - 过渡金属化合物）的第二记录层之间操作环境温度。施加磁场以在第一记录层上形成磁化模式。然后将其加热印刷到在环境温度下具有较高矫顽力的第二记录层上，并且适当地设置记录场以仅在第一记录层上形成磁化图案。磁化图案从第一记录层印刷到第二记录层。

4. 发明申请

US20130107616A1 MAGNETORESISTIVE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USING SAME 审中-公开
标题翻译：使用相同的磁阻效应元件和随机存取存储器
公开(公告)号：US20130107616A1
公开(公告)日：2013-05-02
申请号：US13808967
申请日：2010-07-09
申请人： Hideo Ohno , Shoji Ikeda , Hiroyuki Yamamoto , Kenchi Ito , Hiromasa Takahashi
发明人： Hideo Ohno , Shoji Ikeda , Hiroyuki Yamamoto , Kenchi Ito , Hiromasa Takahashi
IPC分类号： H01L29/82
CPC分类号： H01L29/82 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： A magnetoresistive effect element is provided that exhibits a low writing current density while maintaining a high TMR ratio. A laminated structure of a second ferromagnetic layer/a non-magnetic layer/a first ferromagnetic layer is employed as a recording layer. A material of bcc crystalline structure, such as CoFeB, is employed as a second ferromagnetic layer being in contact with MgO barrier layer. A material whose anisotropy field Hk⊥ in the perpendicular direction is large and that satisfies the relationship of 2πrMs
摘要翻译：提供了具有低写入电流密度同时保持高TMR比的磁阻效应元件。采用第二铁磁层/非磁性层/第一铁磁层的叠层结构作为记录层。使用诸如CoFeB的bcc晶体结构的材料作为与MgO阻挡层接触的第二铁磁层。垂直方向的各向异性场Hk⊥大且满足2pirMs

5. 发明申请

US20130044537A1 MAGNETIC MEMORY, METHOD OF MANUFACTURING THE SAME, AND METHOD OF DRIVING THE SAME 有权
标题翻译：磁记忆体，其制造方法及其驱动方法
公开(公告)号：US20130044537A1
公开(公告)日：2013-02-21
申请号：US13522076
申请日：2011-01-13
申请人： Takashi Ishigaki , Takayuki Kawahara , Riichiro Takemura , Kazuo Ono , Kenchi Ito
发明人： Takashi Ishigaki , Takayuki Kawahara , Riichiro Takemura , Kazuo Ono , Kenchi Ito
IPC分类号： G11C11/16 , H01L43/12
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/5607 , H01L29/82 , H01L43/08 , H01L43/12
摘要： There is provided a magnetic memory with using a magnetoresistive effect element of a spin-injection magnetization reversal type, in which a multi-value operation is possible and whose manufacturing and operation are simple. A preferred aim of this is solved by providing two or more magnetoresistive effect elements which are electrically connected in series to each other and by selecting one of the series-connected elements depending on a direction of a current carried in the series-connected elements, a magnitude thereof, and an order of the current thereof for performing the writing operation. For example, it is solved by differentiating plane area sizes of the respective magnetoresistive effect elements which have the same film structure from each other so as to differentiate resistance change amounts caused by respective magnetization reversal and threshold current values required for respective magnetization reversal from each other.
摘要翻译：提供了一种使用自旋注入磁化反转型的磁阻效应元件的磁存储器，其中多值操作是可能的，其制造和操作简单。优选的目的是通过提供两个或更多个彼此串联电连接的磁阻效应元件来解决，并且根据串联元件中承载的电流的方向选择串联元件之一，其大小及其电流的顺序用于执行写入操作。例如，通过将具有相同膜结构的各个磁阻效应元件的平面面积尺寸相互分离来解决，以便区分由相应的磁化反转引起的电阻变化量和相应磁化反转所需的阈值电流值。

6. 发明申请

US20090310400A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090310400A1
公开(公告)日：2009-12-17
申请号：US12545379
申请日：2009-08-21
申请人： Riichiro Takemura , Takayuki Kawahara , Kenchi Ito , Hiromasa Takahashi
发明人： Riichiro Takemura , Takayuki Kawahara , Kenchi Ito , Hiromasa Takahashi
IPC分类号： G11C11/02
CPC分类号： G11C11/16 , G11C8/08 , G11C11/1675 , H01L27/228
摘要： In MRAM using a spin-transfer torque switching, a sufficient writing operation with a small memory cell is realized, and a reading current is enlarged while a reading disturbance is suppressed. In the case where the free layer of the tunnel magneto-resistance element is located on the side of the bit line, using a PMOS transistor, and in the case where the fixed layer of the tunnel magneto-resistance element is located on the side of the bit line, using an NMOS transistor, an anti-parallel writing in a source grounding operation is performed. The reading and writing operation margin is improved by performing a reading operation in an anti-parallel writing direction.
摘要翻译：在使用自旋转移转矩切换的MRAM中，实现了具有小存储单元的充分的写入操作，并且在读取干扰被抑制的同时增加读取电流。在隧道磁阻元件的自由层位于位线一侧的情况下，使用PMOS晶体管，并且在隧道磁阻元件的固定层位于使用NMOS晶体管的位线执行源极接地操作中的反并联写入。通过执行反并行写入方向的读取操作来提高读取和写入操作余量。

7. 发明申请

US20090168501A1 Magnetic memory and method for writing to magnetic memory 失效
标题翻译：磁存储器和写入磁存储器的方法
公开(公告)号：US20090168501A1
公开(公告)日：2009-07-02
申请号：US12314577
申请日：2008-12-12
申请人： Kenchi Ito
发明人： Kenchi Ito
IPC分类号： G11C11/14 , G11C11/00 , G11C11/416
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： Provided is a magnetic random access memory employing spin torque magnetization reversal having a small write current value is applied. The memory includes: a switching element the conduction of which is controlled by a gate electrode, and three magnetoresistance effect elements connected to the switching element in series. Each magnetoresistance effect element may be a TMR element or a GMR element that includes a multilayered film composed of a fixed layer, a non-magnetic layer and a free layer. The central element serves as a storage element. The magnetoresistance effect elements are manufactured such that an absolute value of current necessary for changing a magnetization direction of at least one of the magnetoresistance effect elements located at both ends is larger than an absolute value of current necessary for changing a magnetization direction of the central magnetoresistance effect element.
摘要翻译：提供了采用具有小的写入电流值的自旋转矩磁化反转的磁性随机存取存储器。存储器包括：其导通由栅电极控制的开关元件，以及串联连接到开关元件的三个磁阻效应元件。每个磁阻效应元件可以是包括由固定层，非磁性层和自由层构成的多层膜的TMR元件或GMR元件。中心元件用作存储元件。制造磁阻效应元件使得位于两端的至少一个磁阻效应元件的磁化方向的变化所需的电流绝对值大于改变中心磁阻的磁化方向所需的电流的绝对值效果元素。

8. 发明申请

US20060215442A1 Conduction control device 有权
公开(公告)号：US20060215442A1
公开(公告)日：2006-09-28
申请号：US11386737
申请日：2006-03-23
申请人： Jorg Wunderlich , Kenchi Ito
发明人： Jorg Wunderlich , Kenchi Ito
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1693 , H01L27/222 , H01L43/08 , H01L43/12
摘要： A conduction control device comprises a first ferromagnetic region having relatively high coercivity, a second ferromagnetic region having relatively low coercivity and a junction region disposed between the first and second ferromagnetic regions. The device also comprises a gate for applying a field to the junction region so as to control charge carrier density within the junction region.

9. 发明授权

US07002831B2 Magnetic semiconductor memory device 失效
标题翻译：磁性半导体存储器件
公开(公告)号：US07002831B2
公开(公告)日：2006-02-21
申请号：US10715448
申请日：2003-11-19
申请人： Hideyuki Matsuoka , Kenchi Ito , Takeshi Sakata , Kiyoo Itoh
发明人： Hideyuki Matsuoka , Kenchi Ito , Takeshi Sakata , Kiyoo Itoh
IPC分类号： G11C17/02
CPC分类号： G11C11/16
摘要： A memory cell in a so-called MRAM by utilizing a tunnel magnetic resistance in the prior art has raised problems that a magnetic field to be applied to a TMR element is essentially weak since a word line for write is disposed apart from the TMR element, that a large current is required at the time of a writing operation, and that electric power consumption is large. In order to solve the above-described problems experienced in the prior art, the present invention provides an MRAM memory cell structure and its fabricating method in which a word line for write is disposed near a TMR element and surrounds it in three directions.
摘要翻译：通过利用现有技术中的隧道磁阻，在所谓的MRAM中的存储单元已经引起了由于用于写入的字线与TMR元件分开而被施加到TMR元件的磁场基本上是弱的问题，在写入操作时需要大的电流，并且电力消耗大。为了解决现有技术中遇到的上述问题，本发明提供了一种MRAM存储单元结构及其制造方法，其中用于写入的字线被设置在TMR元件附近并且在三个方向上包围它。

10. 发明申请

US20050128886A1 Method and apparatus for recording/reproducing magnetization information 有权
标题翻译：用于记录/再现磁化信息的方法和装置
公开(公告)号：US20050128886A1
公开(公告)日：2005-06-16
申请号：US10788437
申请日：2004-03-01
申请人： Susumu Ogawa , Kenchi Ito
发明人： Susumu Ogawa , Kenchi Ito
IPC分类号： G11B5/66 , D06N7/04 , G11B5/02 , G11B5/738 , G11B9/14 , G11B11/00
CPC分类号： G11B9/1472 , G11B5/743 , G11B9/14 , G11B9/1481 , G11B2005/0002
摘要： An information storage device having a hard disk has a metal probe that is brought closely to the surface of a multilayer film that includes a magnetic metal layer, a non-magnetic metal layer, and a magnetic metal layer up to a nano-meter order distance from the surface. The distance between the metal probe and the surface of the multilayer film, as well as the voltage to be applied are changed to change the state of the quantum well generated in the multilayer film, thereby changing the magnetizing direction relatively between the two magnetic metal layers. To read magnetization information from the hard disk, a change of an optically induced tunnel current is used. The change of the tunnel current is caused by a change of a plasmon resonance energy according to a relative change of the magnetizing direction between the magnetic metal layers.
摘要翻译：具有硬盘的信息存储装置具有金属探针，该金属探针与包括磁性金属层，非磁性金属层和磁性金属层的多层膜的表面紧密接近，直到达到纳米级的距离从表面。改变金属探针与多层膜的表面之间的距离以及施加的电压，以改变在多层膜中产生的量子阱的状态，从而相对地改变两个磁性金属层之间的磁化方向。为了从硬盘读取磁化信息，使用光学感应隧道电流的改变。隧道电流的变化是由等离子体共振能量根据磁性金属层之间的磁化方向的相对变化而改变引起的。

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