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1. 发明申请

US20130107616A1 MAGNETORESISTIVE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USING SAME 审中-公开
标题翻译：使用相同的磁阻效应元件和随机存取存储器
公开(公告)号：US20130107616A1
公开(公告)日：2013-05-02
申请号：US13808967
申请日：2010-07-09
申请人： Hideo Ohno , Shoji Ikeda , Hiroyuki Yamamoto , Kenchi Ito , Hiromasa Takahashi
发明人： Hideo Ohno , Shoji Ikeda , Hiroyuki Yamamoto , Kenchi Ito , Hiromasa Takahashi
IPC分类号： H01L29/82
CPC分类号： H01L29/82 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： A magnetoresistive effect element is provided that exhibits a low writing current density while maintaining a high TMR ratio. A laminated structure of a second ferromagnetic layer/a non-magnetic layer/a first ferromagnetic layer is employed as a recording layer. A material of bcc crystalline structure, such as CoFeB, is employed as a second ferromagnetic layer being in contact with MgO barrier layer. A material whose anisotropy field Hk⊥ in the perpendicular direction is large and that satisfies the relationship of 2πrMs
摘要翻译：提供了具有低写入电流密度同时保持高TMR比的磁阻效应元件。采用第二铁磁层/非磁性层/第一铁磁层的叠层结构作为记录层。使用诸如CoFeB的bcc晶体结构的材料作为与MgO阻挡层接触的第二铁磁层。垂直方向的各向异性场Hk⊥大且满足2pirMs

2. 发明申请

US20130028013A1 MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY CELL USING SAME, AND RANDOM ACCESS MEMORY 有权
标题翻译：磁阻效应元件，使用相同的磁记忆单元和随机存取存储器
公开(公告)号：US20130028013A1
公开(公告)日：2013-01-31
申请号：US13575387
申请日：2011-01-25
申请人： Shoji Ikeda , Hideo Ohno , Hiroyuki Yamamoto , Kenchi Ito , Hiromasa Takahashi
发明人： Shoji Ikeda , Hideo Ohno , Hiroyuki Yamamoto , Kenchi Ito , Hiromasa Takahashi
IPC分类号： G11C11/16 , H01L29/82
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/16 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： Provided is a magnetoresistive effect element which uses a perpendicularly magnetized material and has a high TMR ratio. Intermediate layers 31, 32 composed of an element metal having a melting point of 1600° C. or an alloy containing the metal on an outside of a structure consisting of a CoFeB layer 41, an MgO barrier layer 10, and a CoFeB layer 42. By inserting the intermediate layers 31, 32, crystallization of the CoFeB layer during annealing is advanced from an MgO (001) crystal side, so that the CoFeB layer has a crystalline orientation in bcc (001).
摘要翻译：提供了使用垂直磁化材料并具有高TMR比的磁阻效应元件。由熔点为1600℃的元素金属组成的中间层31,32，或由CoFeB层41，MgO阻挡层10和CoFeB层42构成的结构的外部含有金属的合金。通过插入中间层31,32，退火期间的CoFeB层的结晶从MgO（001）晶体侧前进，使得CoFeB层具有bcc（001）的结晶取向。

3. 发明授权

US09042165B2 Magnetoresistive effect element, magnetic memory cell using same, and random access memory 有权
标题翻译：磁阻效应元件，使用其的磁存储单元和随机存取存储器
公开(公告)号：US09042165B2
公开(公告)日：2015-05-26
申请号：US13575387
申请日：2011-01-25
申请人： Shoji Ikeda , Hideo Ohno , Hiroyuki Yamamoto , Kenchi Ito , Hiromasa Takahashi
发明人： Shoji Ikeda , Hideo Ohno , Hiroyuki Yamamoto , Kenchi Ito , Hiromasa Takahashi
IPC分类号： G11C11/00 , H01L27/22 , B82Y25/00 , H01F10/32 , H01L43/08 , H01F10/16 , H01F10/12
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/16 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A magnetoresistive effect element uses a perpendicularly magnetized material and has a high TMR ratio. Intermediate layers composed of an element metal having a melting point of 1600° C. or an alloy containing the metal on an outside of a structure consisting of a CoFeB layer, an MgO barrier layer, and a CoFeB layer. By inserting the intermediate layers, crystallization of the CoFeB layer during annealing is advanced from an MgO (001) crystal side, so that the CoFeB layer has a crystalline orientation in bcc (001).
摘要翻译：磁阻效应元件使用垂直磁化材料并具有高TMR比。由熔点为1600℃的元素金属构成的中间层或由CoFeB层，MgO阻挡层和CoFeB层构成的结构的外部含有金属的合金。通过插入中间层，退火过程中CoFeB层的结晶从MgO（001）晶体侧前进，使得CoFeB层具有bcc（001）中的结晶取向。

4. 发明授权

US08837209B2 Magnetic memory cell and magnetic random access memory 有权
标题翻译：磁存储单元和磁性随机存取存储器
公开(公告)号：US08837209B2
公开(公告)日：2014-09-16
申请号：US13582955
申请日：2011-02-17
申请人： Hideo Ohno , Shoji Ikeda , Katsuya Miura , Kazuo Ono , Riichiro Takemura , Hiromasa Takahashi
发明人： Hideo Ohno , Shoji Ikeda , Katsuya Miura , Kazuo Ono , Riichiro Takemura , Hiromasa Takahashi
IPC分类号： G11C11/00 , H01L43/08 , H01L27/22 , G11C11/16
CPC分类号： H01L43/08 , G11C11/00 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： A relation between a drive current of a selection transistor of a magnetic memory and a threshold magnetization switching current of the magnetoresistance effect element is optimized. In order to optimize the relation between the drive current of the selection transistor and the threshold magnetization switching current of the magnetoresistance effect element 101 of the magnetic memory cell, a mechanism 601-604 for dropping the threshold magnetization switching current on “1” writing is provided that applies a magnetic field that is in the inverse direction of the pinned layer to the recording layer of the magnetoresistance effect element.
摘要翻译：优选磁存储器的选择晶体管的驱动电流与磁阻效应元件的阈值磁化开关电流之间的关系。为了优化选择晶体管的驱动电流与磁存储单元的磁阻效应元件101的阈值磁化开关电流之间的关系，用于将阈值磁化开关电流降低到“1”写入的机构601-604是只要将与钉扎层反方向的磁场施加到磁阻效应元件的记录层即可。

5. 发明授权

US07778068B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07778068B2
公开(公告)日：2010-08-17
申请号：US12545363
申请日：2009-08-21
申请人： Takayuki Kawahara , Riichiro Takemura , Kenchi Ito , Hiromasa Takahashi
发明人： Takayuki Kawahara , Riichiro Takemura , Kenchi Ito , Hiromasa Takahashi
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , G11C11/1653 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1693
摘要： In a memory using spin transfer torque, state of the spin is made unstable by applying a weak pulse before rewriting to reduce rewrite current. Reading of high-speed operation is performed with current in a regime where the current becomes non-linearly increases corresponding to the pulse width to suppress disturb. Further, fluctuation of respective memory cells is suppressed by a driving method setting the amount of spin constant by bit line charge to suppress read disturb.
摘要翻译：在使用自旋传递转矩的存储器中，通过在重写之前施加弱脉冲来减小重写电流使自旋状态变得不稳定。利用电流在电流变得非线性地增加而与脉冲宽度对应的状态下进行高速运行的读取，以抑制干扰。此外，通过利用位线电荷设定自旋常数的驱动方法来抑制各个存储单元的波动，以抑制读取干扰。

6. 发明申请

US20090310399A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090310399A1
公开(公告)日：2009-12-17
申请号：US12545363
申请日：2009-08-21
申请人： Takayuki Kawahara , Riichiro Takemura , Kenchi ITO , Hiromasa Takahashi
发明人： Takayuki Kawahara , Riichiro Takemura , Kenchi ITO , Hiromasa Takahashi
IPC分类号： G11C11/00 , G11C7/00 , G11C11/14
CPC分类号： H01L27/228 , G11C11/1653 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1693
摘要： In a memory using spin transfer torque, state of the spin is made unstable by applying a weak pulse before rewriting to reduce rewrite current. Reading of high-speed operation is performed with current in a regime where the current becomes non-linearly increases corresponding to the pulse width to suppress disturb. Further, fluctuation of respective memory cells is suppressed by a driving method setting the amount of spin constant by bit line charge to suppress read disturb.
摘要翻译：在使用自旋传递转矩的存储器中，通过在重写之前施加弱脉冲来减小重写电流使自旋状态变得不稳定。利用电流在电流变得非线性地增加而与脉冲宽度对应的状态下进行高速运行的读取，以抑制干扰。此外，通过利用位线电荷设定自旋常数的驱动方法来抑制各个存储单元的波动，以抑制读取干扰。

7. 发明申请

US20070258281A1 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US20070258281A1
公开(公告)日：2007-11-08
申请号：US11606187
申请日：2006-11-30
申请人： Kenchi Ito , Hiromasa Takahashi , Takayuki Kawahara , Riichiro Takemura
发明人： Kenchi Ito , Hiromasa Takahashi , Takayuki Kawahara , Riichiro Takemura
IPC分类号： G11C11/02
CPC分类号： G11C11/15
摘要： A magnetic memory device comprises a magnetic tunnel junction (MTJ) having a ferromagnetic free layer, and exhibits a first, relatively high resistance state, and a second, relatively low resistance state. To write to the magnetic memory device a current IMTJ is driven through the MTJ. For a first duration, the current is equal to a DC threshold current, being the DC current required to switch the multilayer structure between the first state and the second state. This induces a C-like domain structure in the free layer. For a second duration, the current IMTJ is larger than the DC threshold current. This causes the MTJ to switch states. The current requited to cause switching is less than that required using a uniform current pulse.
摘要翻译：磁存储器件包括具有铁磁性自由层的磁性隧道结（MTJ），并且呈现出第一相对高电阻状态和第二较低电阻状态。为了写入磁存储器件，通过MTJ驱动电流I MTJ 。对于第一持续时间，电流等于DC阈值电流，即在第一状态和第二状态之间切换多层结构所需的DC电流。这在自由层中引起C样结构域结构。在第二持续时间内，当前的电流电流大于直流阈值电流。这导致MTJ切换状态。导致切换的电流小于使用均匀电流脉冲所需的电流。

8. 发明申请

US20070230006A1 Magnetic recording device 失效
标题翻译：磁记录装置
公开(公告)号：US20070230006A1
公开(公告)日：2007-10-04
申请号：US11698929
申请日：2007-01-29
申请人： Hiromasa Takahashi , Kenchi Ito
发明人： Hiromasa Takahashi , Kenchi Ito
IPC分类号： G11B5/02
CPC分类号： G11B5/02 , G11B5/1278 , G11B11/08
摘要： A magnetic recording device which can write magnetic information with high density. The device uses, for a magnetic recording layer of a magnetic recording medium, a magnetic material whose anisotropy energy varies with an applied electric field. The head has an electrode for applying an electric field to a recording area of the magnetic recording medium. Magnetic recording is performed by applying an AC electric field from the electrode while a DC magnetic field is applied to the recording area of the magnetic recording layer.
摘要翻译：一种可以高密度写入磁信息的磁记录装置。该装置对于磁记录介质的磁记录层使用其各向异性能量随施加的电场而变化的磁性材料。头部具有用于向磁记录介质的记录区域施加电场的电极。通过施加来自电极的交流电场来执行磁记录，同时向磁记录层的记录区域施加直流磁场。

9. 发明授权

US07253995B2 Magnetic head and magnetic recording/reproducing device 有权
标题翻译：磁头和磁记录/再现装置
公开(公告)号：US07253995B2
公开(公告)日：2007-08-07
申请号：US10931038
申请日：2004-09-01
申请人： Hiromasa Takahashi , Kenchi Ito
发明人： Hiromasa Takahashi , Kenchi Ito
IPC分类号： G11B5/33 , G11B5/37 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： A magnetic head includes a first electrode layer, a first ferromagnetic electrode pair that is electrically connected to the first electrode layer, and a second ferromagnetic electrode pair that intersects with a current which flows between the first ferromagnetic electrode pairs and is electrically connected with the first electrode layer. The current is allowed to flow between the first ferromagnetic electrode pair through the first electrode layer to accumulate spin electrons in the first electrode layer. A direction of magnetization of the fourth ferromagnetic electrode layer changes upon application of an external magnetic field. The second ferromagnetic electrode pair is so arranged as to intersect with the current that flows between the first ferromagnetic electrode pair, to increase a rate of change in the output signal of the in-plane spin accumulation effect.
摘要翻译：磁头包括第一电极层，电连接到第一电极层的第一铁磁电极对和与在第一铁磁电极对之间流动并与第一电磁体电连接的电流相交的第二铁磁电极对电极层。允许电流通过第一电极层在第一铁磁电极对之间流动，以在第一电极层中积累自旋电子。第四铁磁性电极层的磁化方向在施加外部磁场时发生变化。第二铁磁电极对被布置为与在第一铁磁电极对之间流动的电流相交，以增加平面内自旋累积效应的输出信号的变化率。

10. 发明授权

US07209328B2 Magnetic read head and hard disk drive 有权
标题翻译：磁读头和硬盘驱动器
公开(公告)号：US07209328B2
公开(公告)日：2007-04-24
申请号：US10845080
申请日：2004-05-14
申请人： Kenchi Ito , Hiromasa Takahashi
发明人： Kenchi Ito , Hiromasa Takahashi
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3912 , G11B5/3932
摘要： A magnetic head using a tunneling magnetoresistance effect realizing both high output and wide bandwidth. By providing a magnetic read head and magnetic reading/playback apparatus related to the present invention characterized by comprising: a lower magnetic shield, an upper magnetic shield, a first electrode layer formed on said lower magnetic shield, a first ferromagnetic layer laminated on one end of said first electrode layer through a first insulator, a second ferromagnetic layer laminated on another end of said first electrode layer through a second insulator, a detecting electrode connected to said first ferromagnetic layer, and a second electrode layer electrically connecting said second ferromagnetic layer with said upper magnetic shield; it becomes possible to reduce the capacitance between the first ferromagnetic layer and the insulator and widen the bandwidth of the detecting signal.
摘要翻译：磁头采用隧道磁阻效应实现高输出和宽带宽。通过提供与本发明相关的磁读头和磁读/重放装置，其特征在于包括：下磁屏蔽，上磁屏蔽，形成在所述下磁屏蔽上的第一电极层，在一端层叠的第一铁磁层所述第一电极层通过第二绝缘体层叠在所述第一电极层的另一端上的第二铁磁层，连接到所述第一铁磁层的检测电极和将所述第二铁磁层与所述第二铁磁层电连接的第二电极层，上磁屏蔽; 可以减小第一铁磁层与绝缘体之间的电容，并扩大检测信号的带宽。

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