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1. 发明申请

US20080170969A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080170969A1
公开(公告)日：2008-07-17
申请号：US11680118
申请日：2007-02-28
申请人： Ken Yoshioka , Yutaka Omoto , Mamoru Yakushiji , Tsunehiko Tsubone , Kazunori Nakamoto
发明人： Ken Yoshioka , Yutaka Omoto , Mamoru Yakushiji , Tsunehiko Tsubone , Kazunori Nakamoto
IPC分类号： G05D23/00
CPC分类号： H01L21/6831 , G05D23/1932 , G05D23/22 , H01L21/67109 , H01L21/67276
摘要： It is possible to provide a plasma etching apparatus that controls the temperature of a sample at a higher speed and with more accuracy to improve the efficiency of processing the sample. A plasma processing apparatus includes a processing chamber to be depressurized and exhausted, a sample placement electrode provided in the processing chamber and having a sample placement surface on which a substrate to be processed is placed, an electromagnetic generation device to generate plasma in the processing chamber, a supply system that supplies processing gas to the processing chamber, a vacuum exhaust system that exhausts inside the processing chamber, a heater layer and a base temperature monitor that are disposed on the sample placement electrode, a wafer temperature estimating unit that estimates a wafer temperature from the base temperature monitor and plasma forming power supply, and a controller that regulates the heater corresponding to output from the temperature estimating unit.
摘要翻译：可以提供一种等离子体蚀刻装置，其以更高的速度和更高的精度来控制样品的温度，以提高样品的处理效率。一种等离子体处理装置，其特征在于，包括要被减压和排出的处理室，设置在处理室中并具有放置有待处理基板的样品放置面的样品放置电极，在处理室中产生等离子体的电磁产生装置向处理室供给处理气体的供给系统，在处理室内排出的真空排气系统，设置在样本设置电极上的加热器层和基底温度监视器，估计晶片的晶片温度估计单元来自基础温度监视器和等离子体形成电源的温度，以及根据来自温度估计单元的输出来调节加热器的控制器。

2. 发明申请

US20140001154A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20140001154A1
公开(公告)日：2014-01-02
申请号：US13602421
申请日：2012-09-04
申请人： Kohei Sato , Kazunori Nakamoto , Yutaka Omoto
发明人： Kohei Sato , Kazunori Nakamoto , Yutaka Omoto
IPC分类号： H01L21/3065 , C23F1/00 , C23F1/08
CPC分类号： H01L21/67069 , H01J37/32577 , H01J37/32697 , H01J37/32715 , H01J37/32724 , H01L21/6833
摘要： In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.
摘要翻译：在包括设置在真空容器中的处理室的等离子体处理装置中，位于处理室中的样品台，设置在样品台的顶表面上并用作样品台的样品安装表面的电介质膜，以及多个电极嵌入在电介质膜中，用于在供电时将样品夹持到电介质膜上，一部分样品通过在将样品安装在样品台上时向至少一个电极供电来夹持; 将样品加热至预定温度; 通过向另一个电极提供电力来吸收较大部分的样品; 并且开始使用等离子体的样品的处理。

3. 发明授权

US08920665B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08920665B2
公开(公告)日：2014-12-30
申请号：US13602421
申请日：2012-09-04
申请人： Kohei Sato , Kazunori Nakamoto , Yutaka Omoto
发明人： Kohei Sato , Kazunori Nakamoto , Yutaka Omoto
IPC分类号： H01L21/3065 , C23F1/00 , C23F1/08
CPC分类号： H01L21/67069 , H01J37/32577 , H01J37/32697 , H01J37/32715 , H01J37/32724 , H01L21/6833
摘要： In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.
摘要翻译：在包括设置在真空容器中的处理室的等离子体处理装置中，位于处理室中的样品台，设置在样品台的顶表面上并用作样品台的样品安装表面的电介质膜，以及多个电极嵌入在电介质膜中，用于在供电时将样品夹持到电介质膜上，一部分样品通过在将样品安装在样品台上时向至少一个电极供电来夹持; 将样品加热至预定温度; 通过向另一个电极提供电力来吸收较大部分的样品; 并且开始使用等离子体的样品的处理。

4. 发明授权

US08828257B2 Plasma processing apparatus and operation method thereof 有权
标题翻译：等离子体处理装置及其操作方法
公开(公告)号：US08828257B2
公开(公告)日：2014-09-09
申请号：US12379641
申请日：2009-02-26
申请人： Hiroho Kitada , Kazunori Nakamoto , Yosuke Sakai
发明人： Hiroho Kitada , Kazunori Nakamoto , Yosuke Sakai
IPC分类号： H05H1/00 , H01L21/306 , C03C15/00 , C03C25/68 , C23F1/00 , H01J37/32 , H01L21/687
CPC分类号： H01L21/68742 , H01J37/32082 , H01J37/3244 , H01J2237/20
摘要： In a plasma processing apparatus including a processing chamber in a vacuum container to form plasma in the processing chamber in which pressure is reduced, a sample stage in lower part of inside of the processing chamber and having an upper surface on which a wafer to be processed by plasma is put, a plurality of pins in the sample stage to be moved in vertical direction so that the pins abut against rear side of the wafer to move the wafer up and down over the upper surface of the sample stage, and a plurality of openings formed in the upper surface of the sample stage so that the pins are moved in the openings, gas is fed from supply ports communicating with the openings into the processing chamber through the openings when the wafer is not put on the upper surface of the sample stage.
摘要翻译：在等离子体处理装置中，包括在真空容器中的处理室，以在压力降低的处理室中形成等离子体，处理室内部的下部的样品台，其上表面上加有待处理的晶片通过等离子体放置，样品台中的多个针在垂直方向上移动，使得销抵靠晶片的后侧，以将晶片上下移动到样品台的上表面上，并且多个形成在样品台的上表面中的开口，使得销在开口中移动，当晶片未放置在样品的上表面上时，气体通过开口从与开口连通的供应端口进入处理室阶段。

5. 发明申请

US20130180662A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20130180662A1
公开(公告)日：2013-07-18
申请号：US13410331
申请日：2012-03-02
申请人： Kohei Sato , Kazunori Nakamoto , Yutaka Ohmoto
发明人： Kohei Sato , Kazunori Nakamoto , Yutaka Ohmoto
IPC分类号： C23F1/08
CPC分类号： H01J37/32082 , H01L21/67126 , H01L21/6833 , H01L21/68785
摘要： In a plasma processing apparatus having a processing chamber, a sample stage, a sample, a dielectric-composed insulating film and an electrode, the sample stage can be divided into an upper member and a lower member, the upper member including the insulating film and an electrode, the apparatus includes a socket which is deployed inside a through hole of the upper member, and which is electrically connected to the electrode, a pin which is brought into contact with the socket by being inserted into the socket, and a seal member which is attached onto the socket in order to implement a hermetic sealing between the upper-member side and the lower-member side inside the through hole, the upper-member side being continuously linked to the decompressed processing chamber, the lower-member side being continuously linked to the substantially-atmospheric-pressure side which is the outside of the processing chamber.
摘要翻译：在具有处理室，样品台，样品，电介质绝缘膜和电极的等离子体处理装置中，样品台可以分为上部构件和下部构件，上部构件包括绝缘膜和一种电极，该装置包括：插座，该插座设置在上部构件的通孔的内部，并与电极电连接;插销插入插座而与插座接触的插头;以及密封构件其安装在插座上，以便在通孔内部实现上部件侧和下部件侧之间的气密密封，上部件侧连续地连接到减压处理室，下部件侧为连续地连接到作为处理室外部的大气压力侧。

6. 发明授权

US09384946B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09384946B2
公开(公告)日：2016-07-05
申请号：US13410331
申请日：2012-03-02
申请人： Kohei Sato , Kazunori Nakamoto , Yutaka Ohmoto
发明人： Kohei Sato , Kazunori Nakamoto , Yutaka Ohmoto
IPC分类号： H01L21/683 , H01J37/32 , H01L21/67 , H01L21/687
CPC分类号： H01J37/32082 , H01L21/67126 , H01L21/6833 , H01L21/68785
摘要： In a plasma processing apparatus having a processing chamber, a sample stage, a sample, a dielectric-composed insulating film and an electrode, the sample stage can be divided into an upper member and a lower member, the upper member including the insulating film and an electrode, the apparatus includes a socket which is deployed inside a through hole of the upper member, and which is electrically connected to the electrode, a pin which is brought into contact with the socket by being inserted into the socket, and a seal member which is attached onto the socket in order to implement a hermetic sealing between the upper-member side and the lower-member side inside the through hole, the upper-member side being continuously linked to the decompressed processing chamber, the lower-member side being continuously linked to the substantially-atmospheric-pressure side which is the outside of the processing chamber.
摘要翻译：在具有处理室，样品台，样品，电介质绝缘膜和电极的等离子体处理装置中，样品台可以分为上部构件和下部构件，上部构件包括绝缘膜和一种电极，该装置包括：插座，该插座设置在上部构件的通孔的内部，并与电极电连接;插销插入插座而与插座接触的插头;以及密封构件其安装在插座上，以便在通孔内部实现上部件侧和下部件侧之间的气密密封，上部件侧连续地连接到减压处理室，下部件侧为连续地连接到作为处理室外部的大气压力侧。

7. 发明申请

US20070267145A1 Sample table and plasma processing apparatus provided with the same 审中-公开
标题翻译：样品台和等离子体处理装置
公开(公告)号：US20070267145A1
公开(公告)日：2007-11-22
申请号：US11513367
申请日：2006-08-31
申请人： Hiroho Kitada , Kazunori Nakamoto , Masakazu Isozaki
发明人： Hiroho Kitada , Kazunori Nakamoto , Masakazu Isozaki
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32431 , H01J2237/2001 , H01L21/67109 , H01L21/68742 , H01L21/68785
摘要： A plasma processing apparatus includes: two disk-shaped members that are disposed inside the sample table and vertically connected; coolant grooves that are respectively disposed in the outer circumference side and the central side of the upper disk-shaped member and inside which coolants flow; a ring-shaped groove for suppressing heat transfer between these coolant grooves that is disposed between these coolant grooves; a fastening unit that fastens the upper disk-shaped member and the lower disk-shaped member respectively in plural positions of the outer circumference side of the coolant groove of the outer circumference side, and in plural positions of the inner circumference side of the ring-shaped groove; and pusher pins for carrying in/out a sample to the sample mounting surface, wherein the fastening unit of the inner circumference side of the ring-shaped groove and the pusher pins are disposed on a circle circumference within a range of 47 to 68% of the radius of the sample.
摘要翻译：一种等离子体处理装置包括：两个盘状构件，其设置在样品台内并垂直连接; 冷却剂槽分别设置在上盘形部件的外周侧和中心侧，冷却剂流入内部; 用于抑制这些冷却剂槽之间的这些冷却剂槽之间的热传递的环形槽; 紧固单元，其将上部圆盘状构件和下部盘状构件分别固定在外周侧的冷却剂槽的外周侧的多个位置，并且在环状构件的内周侧的多个位置，形槽; 以及用于将样品输送到样品安装面的推压销，其中，所述环状槽的内周侧的紧固单元和所述推动销配置在圆周上，该圆周的范围为47〜68％样品的半径。

8. 发明申请

US20100163403A1 Plasma processing apparatus and operation method thereof 有权
标题翻译：等离子体处理装置及其操作方法
公开(公告)号：US20100163403A1
公开(公告)日：2010-07-01
申请号：US12379641
申请日：2009-02-26
申请人： Hiroho Kitada , Kazunori Nakamoto , Yosuke Sakai
发明人： Hiroho Kitada , Kazunori Nakamoto , Yosuke Sakai
IPC分类号： H05H1/00 , H01L21/306
CPC分类号： H01L21/68742 , H01J37/32082 , H01J37/3244 , H01J2237/20
摘要： In a plasma processing apparatus including a processing chamber in a vacuum container to form plasma in the processing chamber in which pressure is reduced, a sample stage in lower part of inside of the processing chamber and having an upper surface on which a wafer to be processed by plasma is put, a plurality of pins in the sample stage to be moved in vertical direction so that the pins abut against rear side of the wafer to move the wafer up and down over the upper surface of the sample stage, and a plurality of openings formed in the upper surface of the sample stage so that the pins are moved in the openings, gas is fed from supply ports communicating with the openings into the processing chamber through the openings when the wafer is not put on the upper surface of the sample stage.
摘要翻译：在等离子体处理装置中，包括在真空容器中的处理室，以在压力降低的处理室中形成等离子体，处理室内部的下部的样品台，其上表面上加有待处理的晶片通过等离子体放置，样品台中的多个针在垂直方向上移动，使得销抵靠晶片的后侧，以将晶片上下移动到样品台的上表面上，并且多个形成在样品台的上表面中的开口，使得销在开口中移动，当晶片未放置在样品的上表面上时，气体通过开口从与开口连通的供应端口进入处理室阶段。

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