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    • 2. 发明申请
    • ELECTRON EMITTER
    • 电子发射器
    • US20070188069A1
    • 2007-08-16
    • US11673769
    • 2007-02-12
    • Kei SatoTetsuya HattoriHirofumi YamaguchiShuichi Ozawa
    • Kei SatoTetsuya HattoriHirofumi YamaguchiShuichi Ozawa
    • H01J1/00
    • H01J1/312B82Y10/00H01J1/30H01J2201/306H01J2201/312
    • Provided is a piezoelectric-film-type electron emitter of high durability exhibiting suppressed reduction in electron emission quantity, which reduction would otherwise occur with repeated use of the electron emitter. The electron emitter includes a substrate, a lower electrode, an emitter layer, and an upper electrode. The upper electrode has a plurality of openings, and an emitter section located on the top surface of the emitter layer is exposed through the openings to a reduced-pressure atmosphere. The electron emitter is configured so that when a pulse drive voltage Va is applied between the lower electrode and the upper electrode, electrons are accumulated on the emitter section, and then the electrons are emitted toward the reduced-pressure atmosphere. The emitter layer contains a primary component (i.e., a ferroelectric composition) and an additional component. The additional component contains a transition metal oxide of high oxidation number which can serve as an oxidizing agent by being converted into an oxide of the transition metal of lower oxidation number.
    • 提供了一种具有高耐久性的压电薄膜型电子发射体,其显示出抑制电子发射量的减少,但是通过反复使用电子发射器将会发生减小。 电子发射器包括衬底,下电极,发射极层和上电极。 上电极具有多个开口,并且位于发射极层的顶表面上的发射极部分通过开口暴露于减压气氛。 电子发射器被配置为使得当在下电极和上电极之间施加脉冲驱动电压Va时,电子在发射极部分积聚,然后电子朝向减压气氛发射。 发射极层包含主要组分(即铁电组合物)和附加组分。 附加成分含有高氧化数的过渡金属氧化物,其可以通过转化为较低氧化数的过渡金属的氧化物而用作氧化剂。
    • 3. 发明授权
    • Electron emitter
    • 电子发射体
    • US07576479B2
    • 2009-08-18
    • US11673769
    • 2007-02-12
    • Kei SatoTetsuya HattoriHirofumi YamaguchiShuichi Ozawa
    • Kei SatoTetsuya HattoriHirofumi YamaguchiShuichi Ozawa
    • H01J1/14H01J1/05
    • H01J1/312B82Y10/00H01J1/30H01J2201/306H01J2201/312
    • Provided is a piezoelectric-film-type electron emitter of high durability exhibiting suppressed reduction in electron emission quantity, which reduction would otherwise occur with repeated use of the electron emitter. The electron emitter includes a substrate, a lower electrode, an emitter layer, and an upper electrode. The upper electrode has a plurality of openings, and an emitter section located on the top surface of the emitter layer is exposed through the openings to a reduced-pressure atmosphere. The electron emitter is configured so that when a pulse drive voltage Va is applied between the lower electrode and the upper electrode, electrons are accumulated on the emitter section, and then the electrons are emitted toward the reduced-pressure atmosphere. The emitter layer contains a primary component (i.e., a ferroelectric composition) and an additional component. The additional component contains a transition metal oxide of high oxidation number which can serve as an oxidizing agent by being converted into an oxide of the transition metal of lower oxidation number.
    • 提供了一种具有高耐久性的压电薄膜型电子发射体,其显示出抑制电子发射量的减少,但是通过反复使用电子发射器将会发生减小。 电子发射器包括衬底,下电极,发射极层和上电极。 上电极具有多个开口,并且位于发射极层的顶表面上的发射极部分通过开口暴露于减压气氛。 电子发射器被配置为使得当在下电极和上电极之间施加脉冲驱动电压Va时,电子在发射极部分积聚,然后电子朝向减压气氛发射。 发射极层包含主要组分(即铁电组合物)和附加组分。 附加成分含有高氧化数的过渡金属氧化物,其可以通过转化为较低氧化数的过渡金属的氧化物而用作氧化剂。
    • 4. 发明申请
    • Method of manufacturing optical waveguide device
    • 制造光波导器件的方法
    • US20050213916A1
    • 2005-09-29
    • US11074898
    • 2005-03-09
    • Chie FukudaTetsuya HattoriMorihiro Seki
    • Chie FukudaTetsuya HattoriMorihiro Seki
    • G02B6/13G02B6/10G02B6/136
    • G02B6/136
    • A method of manufacturing an optical waveguide device with low scattering loss is provided. This method comprises, in the following order, the steps of forming a groove by etching in a cladding member having a glass region including a first dopant that lowers the softening temperature of the glass region, heat treating the cladding member at a temperature that is higher than the lowered softening temperature, forming a core within the groove, and forming an overcladding layer composed of glass including a second dopant over the core and the cladding member. Alternatively, this method comprises the steps of forming a groove by etching in a cladding member having a glass region including one of elemental germanium, elemental phosphorus, and elemental boron, heat treating the cladding member after the formation of the groove, forming a core within the groove, and forming an overcladding layer over the core and the cladding member.
    • 提供一种制造具有低散射损耗的光波导器件的方法。 该方法按照以下顺序包括通过蚀刻在具有降低玻璃区域的软化温度的第一掺杂剂的玻璃区域的包层部件中形成沟槽的步骤,在较高温度下对包层部件进行热处理 比降低的软化温度,在槽内形成芯,并且在芯和包层构件上形成由包括第二掺杂剂的玻璃构成的外包层。 或者,该方法包括以下步骤:在具有包括元素锗,元素磷和元素硼中的一种的玻璃区域的包层构件中通过蚀刻形成沟槽,在形成沟槽之后对包层构件进行热处理,形成芯 并且在芯和包层构件上形成外包层。
    • 6. 发明授权
    • Method of producing semiconductor optical device
    • 制造半导体光学器件的方法
    • US07955880B2
    • 2011-06-07
    • US12481870
    • 2009-06-10
    • Toshio NomaguchiTetsuya HattoriKazunori Fujimoto
    • Toshio NomaguchiTetsuya HattoriKazunori Fujimoto
    • H01L21/00
    • H01S5/2231H01S5/2214H01S5/3235H01S2304/04
    • A method of producing a semiconductor optical device includes a first step of growing a stacked semiconductor layer including a first III-V group compound semiconductor layer for an active layer on a substrate; a second step of forming a silicon oxide film on the stacked semiconductor layer, the silicon oxide film having a predetermined film stress and a predetermined thickness; a third step of forming a strip-shaped groove in the silicon oxide film by etching the silicon oxide film, using a resist pattern formed on the silicon oxide film, until a surface of the stacked semiconductor layer is exposed; and a fourth step of growing a second III-V group compound semiconductor layer in the groove using the silicon oxide film as a selective mask.
    • 一种制造半导体光学器件的方法包括:在衬底上生长包括用于有源层的第一III-V族化合物半导体层的堆叠半导体层的第一步骤; 在叠层半导体层上形成氧化硅膜的第二步骤,具有预定膜应力和预定厚度的氧化硅膜; 第三步骤,通过使用形成在氧化硅膜上的抗蚀图案,通过蚀刻氧化硅膜在氧化硅膜上形成条形槽,直到层叠半导体层的表面露出为止; 以及使用氧化硅膜作为选择性掩模在槽内生长第二III-V族化合物半导体层的第四步骤。
    • 7. 发明申请
    • Optical waveguide device, and method of manufacturing optical waveguide device
    • 光波导器件及其制造方法
    • US20050169592A1
    • 2005-08-04
    • US11046859
    • 2005-02-01
    • Chie FukudaTetsuya Hattori
    • Chie FukudaTetsuya Hattori
    • G02B6/122G02B6/10G02B6/13G02B6/132G02B6/136
    • G02B6/132G02B6/136
    • The present invention provides a glass optical waveguide device that comprises silica glass and is usable despite a relatively large refractive index difference between its core layer and cladding layer, and a method of manufacturing such device. This optical waveguide device includes a core layer on or over a substrate and a cladding layer that covers the core layer, wherein the core layer is made of silica glass containing an additive for raising the refractive index, and the relative refractive index difference of the core layer with respect to the cladding layer is at least 2.5%. The method of manufacturing this optical waveguide device includes the steps of placing a substrate over an electrode plate that is connected to a first high-frequency power supply within a vacuum vessel, introducing a raw material gas into the vacuum vessel and generating a plasma within the vacuum vessel with high-frequency power supplied from a second high-frequency power supply, and simultaneously forming an optical waveguide film over the substrate while supplying high-frequency power from the first high-frequency power supply to the electrode plate.
    • 本发明提供了一种玻璃光波导器件,其包括石英玻璃,并且尽管其芯层和包层之间的折射率差较大,但可以使用,以及制造该器件的方法。 该光波导装置包括在基板上或基板上的芯层和覆盖芯层的包覆层,其中芯层由含有用于提高折射率的添加剂的石英玻璃制成,并且芯体的相对折射率差 相对于包覆层的层为至少2.5%。 制造该光波导装置的方法包括以下步骤:将基板放置在与真空容器内的第一高频电源连接的电极板上,将原料气体引入真空容器内, 从第二高频电源供给的具有高频电力的真空容器,同时在从第一高频电源向电极板提供高频电力的同时在衬底上形成光波导膜。