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1. 发明授权

US09767961B2 Composite electronic component 有权
公开(公告)号：US09767961B2
公开(公告)日：2017-09-19
申请号：US13418764
申请日：2012-03-13
申请人： Naoto Ohira , Natsumi Shimogawa , Hirofumi Yamaguchi , Tsutomu Nanataki
发明人： Naoto Ohira , Natsumi Shimogawa , Hirofumi Yamaguchi , Tsutomu Nanataki
IPC分类号： H01F17/00 , H01G4/30 , H01G4/40
CPC分类号： H01G4/30 , H01F17/0013 , H01F2017/0026 , H01G4/40
摘要： The present invention relates to a composite electronic component having a dielectric body portion inside of which a conductive body is provided, and a magnetic body portion inside of which a conductive body is provided. In the present invention, a layer made of a metal material is arranged between the dielectric body portion and the magnetic body portion as an intermediate layer.

2. 发明授权

US08318238B2 Film position adjusting method, memory medium and substrate processing system 有权
标题翻译：胶片位置调整方法，记忆介质和底物处理系统
公开(公告)号：US08318238B2
公开(公告)日：2012-11-27
申请号：US12298570
申请日：2007-04-26
申请人： Yoshiaki Sasaki , Hirofumi Yamaguchi
发明人： Yoshiaki Sasaki , Hirofumi Yamaguchi
IPC分类号： C23C16/52 , C23C16/00
CPC分类号： H01L21/681 , C23C16/04 , C23C16/52 , H01L21/67259 , H01L21/67288
摘要： A substrate processing system includes a processing chamber 12, and an orienter 16 centering a wafer W. The orienter 16 is provided with an orienter sensor 42 measuring a central position discrepancy of the wafer W, and an image sensor 41 measuring a width of a non-film forming portion at circumferential portions of the wafer W. After a film deposition processing in the processing chamber 12, the wafer W is loaded into the orienter 16 where a central position discrepancy of the wafer W is measured, and the wafer W is then centered. Further, the width of the non-film forming portion of the wafer W is measured, and a film position discrepancy is calculated based on the width of the non-film forming portion. To correct the calculated film position discrepancy, a target transfer position of the wafer W on a mounting table 13 in the processing chamber 12 is adjusted.
摘要翻译：基板处理系统包括处理室12和定向晶片W定向器16.定向器16设置有测量晶片W的中心位置偏差的定向传感器42和测量晶片W的宽度的图像传感器41，在晶片W的圆周部分处形成膜。在处理室12中进行成膜处理之后，将晶片W装载到定向器16中，其中测量晶片W的中心位置差异，然后晶片W 居中此外，测量晶片W的非成膜部分的宽度，并且基于非成膜部分的宽度计算膜位置差异。为了校正计算出的胶片位置偏差，调整处理室12中的安装台13上的晶片W的目标转印位置。

3. 发明授权

US08277680B2 Method of manufacturing piezoelectric/electrostrictive ceramic composition 有权
标题翻译：制造压电/电致伸缩陶瓷组合物的方法
公开(公告)号：US08277680B2
公开(公告)日：2012-10-02
申请号：US12507199
申请日：2009-07-22
申请人： Ritsu Tanaka , Hirofumi Yamaguchi
发明人： Ritsu Tanaka , Hirofumi Yamaguchi
IPC分类号： H01L41/187
CPC分类号： H01L41/43 , C01G35/006 , C01G45/006 , C01P2002/34 , C01P2004/82 , C04B35/495 , C04B35/62685 , C04B2235/3201 , C04B2235/3203 , C04B2235/3262 , C04B2235/3267 , C04B2235/3294 , C04B2235/3298 , C04B2235/449 , C04B2235/768 , H01L41/0973 , H01L41/1873 , H01L41/273
摘要： A (Li, Na, K)(Nb, Ta)O3-based piezoelectric/electrostrictive ceramic composition having large electric field-induced distortion at the time of application of a high electric field is provided. A perovskite oxide is synthesized which contains Li (lithium), Na (sodium) and K (potassium) as A-site elements and contains at least Nb (niobium) and Sb (antimony) out of Nb, Ta (tantalum) and Sb as B-site elements, the ratio of the total number of atoms of the A-site elements to the total number of atoms of the B-site elements being larger than 1, and then a Bi (bismuth) compound is added and reacted. The amount of addition of the Bi compound with respect to 100 molar parts of the perovskite oxide is preferably not less than 0.02 molar part nor more than 0.1 molar part in terms of Bi atoms.
摘要翻译：提供了在施加高电场时具有大的电场诱导失真的（Li，Na，K）（Nb，Ta）O 3系压电/电致伸缩陶瓷组合物。合成了含有Li（锂），Na（钠）和K（钾）作为A位元素并且至少含有Nb，Ta（钽）和Sb中的Nb（铌）和Sb（锑）的钙钛矿氧化物， B位元素，A位元素的原子总数与B位元素的总原子数大于1的比例，然后添加Bi（铋）化合物并进行反应。相对于100摩尔份的钙钛矿氧化物，Bi化合物的添加量优选为Bi原子计为0.02摩尔以上0.1摩尔以下。

4. 发明授权

US08068017B2 Crime-prevention system 有权
标题翻译：预防犯罪制度
公开(公告)号：US08068017B2
公开(公告)日：2011-11-29
申请号：US11802959
申请日：2007-05-29
申请人： Ryoko Morita , Kenichi Isoyama , Koichi Iwamori , Hirofumi Yamaguchi , Mayumi Takimoto , Hitoshi Fujita
发明人： Ryoko Morita , Kenichi Isoyama , Koichi Iwamori , Hirofumi Yamaguchi , Mayumi Takimoto , Hitoshi Fujita
IPC分类号： G08G1/00
CPC分类号： B60R25/1004 , B60R25/24 , B60R2325/205
摘要： A vehicle is provided with an identification information memory in which identification information of the vehicle is memorized, and a transmitter for transmitting the identification information. A portable terminal is provided with a receiver for receiving the identification information transmitted from the transmitter, a registration information memory in which identification information of a ridable vehicle is memorized as registration information in advance, and a controller for executing authentication between the identification information and the registration information and executing a warning processing when a result of authentication shows inconsistency.
摘要翻译：车辆设置有识别信息存储器，其中记录了车辆的识别信息，以及发送器，用于发送识别信息。便携式终端设置有用于接收从发送机发送的识别信息的接收机，其中可预约地存储可移动车辆的识别信息作为登记信息的登记信息存储器，以及用于执行识别信息和注册信息，并且当认证结果显示不一致时执行警告处理。

5. 发明授权

US07943192B2 Piezoelectric/electrostrictive film type element and manufacturing method thereof 有权
标题翻译：压电/电致伸缩膜型元件及其制造方法
公开(公告)号：US07943192B2
公开(公告)日：2011-05-17
申请号：US11955716
申请日：2007-12-13
申请人： Tsutomu Nanataki , Hirofumi Yamaguchi , Toshikatsu Kashiwaya , Takaaki Koizumi
发明人： Tsutomu Nanataki , Hirofumi Yamaguchi , Toshikatsu Kashiwaya , Takaaki Koizumi
IPC分类号： B05D5/12
CPC分类号： C04B35/495 , C04B2235/3201 , C04B2235/3203 , C04B2235/3251 , C04B2235/3291 , C04B2235/3294 , C04B2235/656 , C04B2235/6567 , C04B2235/785 , C04B2235/786 , H01L41/0973 , H01L41/1873 , H01L41/314 , Y10T29/42
摘要： A piezoelectric/electrostrictive film type device including a thin substrate made of ceramic and a piezoelectric/electrostrictive operating portion disposed on the substrate and constituted by successively laminating a lower electrode film, a piezoelectric/electrostrictive film containing a large number of crystal particles constituted of a piezoelectric/electrostrictive composition, and an upper electrode film. The piezoelectric/electrostrictive composition contains one or more alkali metal elements selected from the group consisting of lithium, potassium, and sodium, and one or more metal elements selected from the group consisting of niobium, tantalum, antimony, and silver. Circle equivalent diameters of 90% or more of the large number of crystal particles are in a range of 0.3 to 50 μm.
摘要翻译：一种压电/电致伸缩薄膜型器件，包括由陶瓷制成的薄基片和压电/电致伸缩操作部分，该压电/电致伸缩操作部分设置在基片上，并由下电极薄膜，含有大量由压电/电致伸缩组合物和上电极膜。压电/电致伸缩组合物包含一种或多种选自锂，钾和钠的碱金属元素，以及一种或多种选自铌，钽，锑和银的金属元素。大量晶体粒子的90％以上的圆当量直径在0.3〜50μm的范围内。

6. 发明授权

US07893601B2 (Li, Na, K)(Nb, Ta) O3 based piezoelectric material 有权
标题翻译：（Li，Na，K）（Nb，Ta）O 3基压电材料
公开(公告)号：US07893601B2
公开(公告)日：2011-02-22
申请号：US12267717
申请日：2008-11-10
申请人： Kazuyuki Kaigawa , Hirofumi Yamaguchi
发明人： Kazuyuki Kaigawa , Hirofumi Yamaguchi
IPC分类号： H01L41/187
CPC分类号： C04B35/495 , C01G33/006 , C01G35/006 , C01P2002/34 , C01P2002/52 , C01P2004/03 , C01P2006/10 , C01P2006/40 , C04B2235/3201 , C04B2235/3203 , C04B2235/3241 , C04B2235/3251 , C04B2235/3267 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/449 , C04B2235/5445 , C04B2235/656 , C04B2235/6562 , C04B2235/661 , C04B2235/768 , C04B2235/77 , C04B2235/783 , C04B2235/785 , C04B2235/786 , C04B2235/79 , H01L41/1873 , H01L41/43 , Y10T29/42
摘要： Manufacturing sintered bodies having microstructures including microscopic grains having a grain diameter of less than 5 μm, intermediate grains having a grain diameter of 5 μm or more and less than 15 μm, and coarse grains having a grain diameter of 15 μm or more and 100 μm or less enables to obtain high electric characteristics. Chemical compounds including metal elements are mixed so that the ratio of the elements is a composition expressed by (Li, Na, K)(Nb, Ta)O3, the mixture is calcined and crushed to obtain calcined/crushed powder. The powder is sintered in a constant temperature keeping process wherein temperature is kept constantly at a predetermined temperature within a range from 800 to 900° C. for a predetermined period of time in a heating process, and then the powder is further sintered by raising temperature to firing temperature, thereby the piezoelectric materials having superior electric characteristics are manufactured.
摘要翻译：制造具有微观结构的烧结体，其具有粒径小于5μm的微细晶粒，粒径为5μm以上且小于15μm的中间晶粒，以及粒径为15μm以上且100μm以下的粗晶粒以下能够获得高电特性。将包含金属元素的化合物混合，使元素的比例为由（Li，Na，K）（Nb，Ta）O 3表示的组成，将混合物煅烧并粉碎以获得煅烧/粉碎的粉末。将该粉末在恒温保持法中烧结，其中在加热过程中将温度恒定地保持在800-900℃的预定温度下一段预定的时间，然后通过升高温度进一步烧结粉末烧成温度，由此制造具有优异的电特性的压电材料。

7. 发明授权

US07816847B2 Dielectric electron emitter comprising a polycrystalline substance 有权
标题翻译：包含多晶物质的介电子发射体
公开(公告)号：US07816847B2
公开(公告)日：2010-10-19
申请号：US11180298
申请日：2005-07-13
申请人： Tsutomu Nanataki , Hirofumi Yamaguchi , Ritsu Tanaka
发明人： Tsutomu Nanataki , Hirofumi Yamaguchi , Ritsu Tanaka
IPC分类号： H01J1/30 , H01J1/35 , H01J1/308
CPC分类号： H01J1/312 , H01J9/025 , H01J29/481 , H01J2329/00
摘要： A dielectric device of higher performance is provided. An electron emitter, to which the dielectric device is applied is provided with: an emitter including a dielectric; and an upper electrode and a lower electrode to which drive voltage is applied in order to emit electrons. The emitter is formed by the aerosol deposition method or the sol impregnation method.
摘要翻译：提供了更高性能的电介质器件。施加电介质器件的电子发射体设置有：包括电介质的发射体; 以及为了发射电子而施加驱动电压的上电极和下电极。发射体由气溶胶沉积法或溶胶浸渍法形成。

8. 发明授权

US07741708B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07741708B2
公开(公告)日：2010-06-22
申请号：US11813034
申请日：2005-12-09
申请人： Shuichi Muramatsu , Hidetoshi Suzuki , Tomoyuki Sato , Kazuo Hara , Motoki Yamazaki , Masaki Asari , Hirofumi Yamaguchi
发明人： Shuichi Muramatsu , Hidetoshi Suzuki , Tomoyuki Sato , Kazuo Hara , Motoki Yamazaki , Masaki Asari , Hirofumi Yamaguchi
IPC分类号： H01L23/48
CPC分类号： H01L23/49562 , H01L23/49555 , H01L23/49575 , H01L24/48 , H01L25/072 , H01L2224/0603 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/01066 , H01L2924/1301 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device having a plurality of semiconductor chips mounted on a lead frame (10) and required portions covered with seal portions in which: the plurality of semiconductor chips are divided into a first group of semiconductor chips (Dx to Dz) and a second group of semiconductor chips (Du to Dw and Thx to Thz); both groups of semiconductor chips are mounted on the lead frame (10) at a distance from each other; the seal portions are comprised of first and second resin-seal portions (41 and 42) which cover the first and second groups of semiconductor chips, respectively, along with required portions of the lead frame; both resin-seal portions are mechanically coupled with each other by coupling portions; and a group of read terminals respectively connected to circuits within the first resin-seal portion and circuits within the second resin-seal portion are led out through a gap between the first resin-seal portion (41) and the second resin-seal portion (42).
摘要翻译：一种半导体器件，具有安装在引线框架（10）上的多个半导体芯片和被密封部分覆盖的所需部分，其中：所述多个半导体芯片被划分为第一组半导体芯片（Dx至Dz）和第二组的半导体芯片（Du至Dw和Thx至Thz）; 两组半导体芯片彼此间隔地安装在引线框架（10）上; 密封部分由分别覆盖第一和第二组半导体芯片的第一和第二树脂密封部分41以及引线框架的所需部分分别组成。两个树脂密封部分通过联接部分彼此机械联接; 并且分别连接到第一树脂密封部分中的电路和第二树脂密封部分内的电路的一组读取端子通过第一树脂密封部分（41）和第二树脂密封部分 42）。

9. 发明授权

US07723909B2 Electron emitter formed of a dielectric material characterized by having high mechanical quality factor 有权
标题翻译：由介电材料形成的电子发射体，其特征在于具有高的机械品质因数
公开(公告)号：US07723909B2
公开(公告)日：2010-05-25
申请号：US11471938
申请日：2006-06-21
申请人： Hirofumi Yamaguchi , Kei Sato
发明人： Hirofumi Yamaguchi , Kei Sato
IPC分类号： H01J19/06 , H01J1/14
CPC分类号： H01J1/32 , H01J1/312 , H01J2201/3125
摘要： A dielectric-film-type electron emitter includes an emitter section, a first electrode, and a second electrode. The emitter section is formed of a thin layer of a polycrystalline dielectric material. The dielectric material constituting the emitter section is formed of a material having high mechanical quality factor (Qm). Specifically, the dielectric material has a Qm higher than that of a so-called low-Qm material (a material having a Qm of 100 or less). The Qm of the dielectric material is preferably 300 or more, more preferably 500 or more.
摘要翻译：电介质膜型电子发射器包括发射极部分，第一电极和第二电极。发射极部分由多晶电介质材料的薄层形成。构成发射极部的介电材料由具有高机械品质因数（Qm）的材料形成。具体地说，介电材料的Qm高于所谓的低Qm材料（Qm为100以下的材料）。电介质材料的Qm优选为300以上，更优选为500以上。

10. 发明申请

US20100026246A1 BATTERY CHARGING APPARATUS 审中-公开
标题翻译：电池充电器
公开(公告)号：US20100026246A1
公开(公告)日：2010-02-04
申请号：US12507891
申请日：2009-07-23
申请人： Hirofumi Yamaguchi , Kenji Kimura , Shuichi Muramatsu , Hiromitsu Saito
发明人： Hirofumi Yamaguchi , Kenji Kimura , Shuichi Muramatsu , Hiromitsu Saito
IPC分类号： H02J7/04
CPC分类号： H02J7/1461 , H02H5/04 , H02H7/125 , H02J7/1492 , Y02T10/92
摘要： A battery charging apparatus includes a controlled rectifier circuit for rectifying an output of a magneto AC generator and supplying a rectified output to a battery. The controlled rectifier circuit includes thyristors as rectifying elements, and components of the controlled rectifier circuit are mounted on a circuit board. The charging apparatus includes a protection circuit which has a sensor detecting a temperature of the circuit board and inhibits a trigger signal from being supplied to thyristors of said rectifier circuit when a temperature detected by said sensor is equal to or higher than a predetermined value.
摘要翻译：电池充电装置包括可控整流电路，用于对磁电交流发电机的输出进行整流并将整流输出提供给电池。可控整流电路包括晶闸管作为整流元件，并且可控整流电路的部件安装在电路板上。所述充电装置包括保护电路，所述保护电路具有检测所述电路板的温度的传感器，并且当所述传感器检测到的温度等于或高于预定值时，禁止将触发信号提供给所述整流电路的晶闸管。

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